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Building Software for Simulation: Theory and Algorithms, with Applications in C++ doc
... components to inputs for its other components and outputs fromitself, and for transforming its inputs into input for its components. Algorithms for event scheduling, numerical integration, and other necessary ... Cataloging-in-Publication Data:Nutaro, James J. Building software for simulation: theory and algorithms with applications in C++ / James J. Nutarop. cm.Includes bibliographical references and index.ISBN 978-0-470-41469-9 ... for computing its output from itscurrent state and for computing its next state from its current state and input. Anetwork model has methods for retrieving its set of components, for transformingoutput...
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Mosfet Modeling for VLSI Simulation: Theory And Practices by N. Arora pot
... physical process and geometry structure on the one hand and In the loving memory of my parents Hukamdevi and Guranditta Arora 16 2 Basic Semiconductor and pn Junction Theory 0 FREE ... record for this book is available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ... 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and the conduction band. The energy levels in the valence bands are mostly...
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MOSFET MODELING FOR VLSI SIMULATION Theory and Practice docx
... Consultant) and Dr. Llanda Richardson (Consultant) for their encouragement and assistance in writing this book. I am deeply indebted to Dr. F. Fox, Dr. D. Ramey, and Mr. K. Mistry for their ... editors and this monograph volume’s copy editor Mr. Tjan Kwang Wei at Singapore, led by Dr. Yubing Zhai at New Jersey, for their and her timely efforts, and Professor Kok-Khoo Phua, Founder and ... electrons in the conduction band and holes in the valence band is represented by the effective masses of the electrons (m:) and holes (m;) respectively, and by the equivalent positive...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... Consultant) and Dr. Llanda Richardson (Consultant) for their encouragement and assistance in writing this book. I am deeply indebted to Dr. F. Fox, Dr. D. Ramey, and Mr. K. Mistry for their ... record for this book is available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ... Models for hot-electron effect, particularly substrate and gate current models, and device life-time models are covered in Chapter 8. The experimental setup, required for taking device data for...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
... and pn Junction Theory Similarly for holes we have (2.3 8 b) where R, and G, are recombination and generation rates for holes. These equations are called continuity equations for ... is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there will be no barrier and therefore, there will ... carrier concentration is greatest. For example, for p+n junctions, N, >> N,, and therefore Eq. (2.56) 46 2 Basic Semiconductor and pn Junction Theory 2.6 Diode Current-Voltage...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
... compared to Cdf. Therefore, Cj is the dominant capacitance for reverse bias and small forward bias (vd < &/2), while difision capacitance C,, is dominant for forward bias (V, ... n-type substrate and has holes as the carriers in the channel region.2 Since a single type of charge carrier is involved for normal device operation (electrons for n-channel and holes for p-channel), ... w( = 2n x frequency) for wzP << 1. 60 2 Basic Semiconductor and pn Junction Theory L L l (a) (b) Fig. 2.18 Test structures for separating area and periphery capacitance...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... on device behavior. For increased current drive and hence circuit speed a large W and small L is required. It is important to understand what device L and W stand for from the modeling ... compensate for this band bending by applying an external voltage AV,,, which is simply the work function difference that caused the band bending in the first place. Thus for the bands to ... source and drain overlap distance 1," to be equal'' (see Figure 3.3 1). Assuming the parallel plate formulation, the overlap capacitance CGso and C,,, for the source and...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
... nMOST p-type - +- +++ pMOST n-type - -+- (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax = 420 A), having ... enters through the 4f and y terms; the higher the Nb, the higher the Vth. A plot of V,h versus N,, for both nMOST and pMOST with n+ and p+ polysilicon gates for three different ... energy bands are flat for the entire silicon surface. For uniformly doped substrate Vfb can easily be determined as the gate voltage corresponding to the theoretically computed flat band capaci-...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
... Solving Eqs. (5.38) and (5.39) for N,, and using Eq. (5.36) for X,, yields (5.40) where q5i is given by Eq. (5.35). This value of N,, is used for N, in Eq. (5.29) for the body factor ... becomes a function of back bias, and therefore y is no longer a constant but is bias dependent. For a uniformly doped substrate N, equals N,, and therefore Eq. (5.40) gives N,, = ... both pMOST and nMOST devices, a general expression for the threshold voltage can be written as (5.63) where the + and - signs are for n- and p-channel devices respectively, and AV,,...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
... (b) and (c) are for channel implanted devices, curve (d) is for uniformaly doped device. Although both curves (b) and (c) are for enhance- ment devices, curve (b) has higher t0,(300A), and ... curve (a) and (b) (Figs. 5.31 and 5.32) which are for Vsb = 3 V and 0 V, respectively. n-Channel Devices (nMOST). For n-channel enhancement devices (n' polysilicon gate and p-substrate) ... capacitance and is obtained by differentiating the bulk charge Qb. For example, for a uniformly doped substrate, we can write (5.110) YCOX Cd = 2d+Ti,b' On the other hand, Yang and Chaterjee's...
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15 Estimation Theory and Algorithms: From Gauss to Wiener to Kalman
... E{v(ti)v(tj)}=R(ti)δij; and, w(t) and v(ti)are mutually uncorrelated at all t = ti, i.e., E{w(t)v(ti)}=0 for t = ti, i = 1, 2, In order to apply the KF to (15.49) and (15.50) we must linearize and discretize ... specifyingboth p(Z(k)|θ )and p(θ) and finding the value of θ that maximizes p(θ|Z(k)). It is the knowledgeof the a priori probability model for θ,p(θ), that distinguishes the problem formulation for MAPestimation ... with mean mx(0) and covariancePx(0), and x(0) is not correlated with w(k) and v(k). The dimensions of matrices , , , H, Q, and R are n ì n, n ì p, n ì l, m ì n, p ì p, and m ì m, respectively....
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