MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 11 pdf

... Modeling Hot-Carrier Effects For n-channel MOSFETs, I,, or (Ib/Id) is a well accepted monitor for hot- carrier induced degradation. However, for p-channel MOSFETs both 1, [45] and ... prediction method for hot-carrier-stressed p-MOS transistors’, IEEE IEDM-91, Tech. Dig., pp. 52 5-5 28 (1988). [45] W. Weber and F. Lau, ‘Hot-carrier drifts in submicrometer p-channel MOSFETs’, IEEE ... hot-electrons/holes and degradation for p- and n-channel MOSFETS’, IEEE Electron Device Lett., EDL-6, pp. 8-1 1 (1985). M. Koyanagi, A. G. Lewis, J. Zhu, R. A. Martin, T. Y. Huang, and...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx

... available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology Copyright 0 2007 by ... case permission to photocopy is not required from the publisher. ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This book was prepared by the authors. Neither the Publisher ... 532 10.6.2 MOSFET AC Model Parameter Extraction 533 References 534 11 SPICE Diode and MOSFET Models and Their Parameters 536 11. 1 Diode Model 536 11. 2 MOSFET Level 1 Model 542 11. 2.1 DC...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt

... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... - Vd); vd is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there will be no barrier and therefore, ... 1982 and given in many textbooks) by as much as 50% for boron doped p-type silicon. For phosphorous doped n-type silicon the difference is only 1574. Curves for n-type are lower than p-doped...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx

... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,)l+m F, = 1 - F,(1 + m) (2.87) ... has heavily doped p+ source and drain regions with 80 Z 4 LL 0 - W/L = to, = V. 3 MOS Transistor Structure and Operation -4 .0 -3 .2 -2 .4 -1 .6 -0 .8 0 0.8 1.6 GATE VOLTAGE,...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc

... 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-8 -I .o Nb (~rn-~) _t Fig. 4.5 ... negative number. Similarly for an Al-Si0,-Si(n-type) system, I mrnS = - 0.51 + 4, (V) n-type Si I which is again a negative number. Thus for an Al-SiO,-Si(n- or p-type) system CD,, is...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx

... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... polysilicon gate MOSFET, Proc. Intern. Symposium on VLSI Technology, System and Applications, pp. 17 0-1 73, March (1983). [I 11 B. E. Deal, ‘Standardized ter-rninulogy for oxide charge ... operation for a p-type substrate, N, = 5.1015 cm- ’, to, = 300 A, and V,, = 0 V 4.2 MOS Capacitor at Non-Zero Bias 143 Using Eq. (4.29) for Qb and Eq. (4.39) for Q,,...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx

... 0.0 u- 0.7 W Q !i 0.6 0 > 4 0.5 0 >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 ... both pMOST and nMOST devices, a general expression for the threshold voltage can be written as (5.63) where the + and - signs are for n- and p-channel devices respectively, and AV,, ... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (pm) (b) Fig. 5.21 (a) Aker's model for...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc

... model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1987). [78] Y. Omura and ... ED-36, pp. 111 0-1 115 (1989). [70] R. C. Vankemmel and K. M. De Meyer, ‘A study of the corner effects in trench-like isolated structures’, IEEE Trans. Electron Devices, ED-37, pp. 16 8-1 75 ... in MOSFET , IEEE Trans. Electron Devices, ED-30, pp. 63 5-6 47 (1983). [63] P. T. Lai and Y. C. Cheng, ‘An analytical model for the narrow-width effect in ion-implanted MOSFETs’, Solid-state...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx

... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1.31 x 104V/cm a= 1.13 0 - ... needs 2- or 3-D analysis to account for short-channel and/ or narrow-width behavior. However, for circuit models we invariably modify the 1-D equations developed earlier by including 2- or ... (6.153) For n-channel devices, the value of 8, is usually small ( - 0.005 V- I), and is often neglected. For p-channel devices improves the current-voltage data fit. The SPICE MOSFET...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx

... G. Einspruch and G. Gildenblat, Eds.), VLSI Electronics Vol. 18, pp. 19 1-2 32, Academic Press Inc., New York, 1989. [109] [110 ] [111 ] [112 ] [113 ] [114 ] [115 ] [116 ] [117 ] [118 ] [119 ][120][121][122][123][124]References ... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " ... 6 MOSFET DC Model GATE SAT U R AT 10 N 4 DRAIN 1 L - - - - - - - - - - - D C 0 WY' L 4J-4 Fig. 6.3 1 Schematic diagram illustrating analysis of the velocity...

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