Photonic Properties of Er-Doped Crystalline Silicon

... and optical properties of Si/Si:Er multinanolayerstructures, which emerge as the most promising form of c-Si:Er material.Vinh et al.: Photonic Properties of Er-Doped Crystalline Silicon Vol. ... energy-level splitting of the J ¼ 15=2andJ ¼ 13=2manifolds by a crystal field of C2vsymmetry.Vinh et al.: Photonic Properties of Er-Doped Crystalline Silicon 1274 Proceedings of the IEEE |Vol.97,No.7,July2009Authorized ... informationprocesses.Vinh et al.: Photonic Properties of Er-Doped Crystalline Silicon 1282 Proceedings of the IEEE |Vol.97,No.7,July2009Authorized licensed use limited to: Univ of Calif Santa Barbara....

Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

... 999–1002the silicon top-layer, even for ultra-thin silicon layers(thickness as low as 5–20 nm), and allows to obtaina very sharp interface silicon layer=buried oxide. Theelectrical conductance of silicon ... great amount of interest hasbeen devoted to proximal probe-assisted lithographytechniques [2]. This pioneer process was based ona local oxidation of silicon induced by application of a volatge ... 85.40.UxKeywords: AFM; Lithography; Silicon- on-insulator; Silicon nanostructures1. IntroductionSince the feasibility demonstration of oxide maskgeneration on a silicon wafer by a scanning tunnelingmicroscope...

Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures

... that the band-gap of the codoped Si-nc is reduced with respect to the gap of the pureones showing the possibility of an impurity-based engineering of the optical properties of Si-nc. Here, we ... position 2 of Fig. 11),approaching asymptotically the value of the band-gap of theundoped Si-nw. This is another indication of how dopingcan modify the electronic and optical properties of the ... the electronic properties of the Si-nc are inﬂuenced by the insertion of more andmore impurities. We call this insertion of several impuritiesmultidoping. Fig. 9 shows how the FE of a large Si147H100-nc...

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Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide

... agglomerated clusters consisting of high density of nanowires. The magniﬁed view of a singlecluster is depicted in the inset of Fig. 2(d). These observationssuggest that growth of nanowires in the present ... 2009PACS:61.46.–w81.07.–bKeywords: Silicon monoxide Silicon oxide nanowiresThermal evaporationPhotoluminescenceabstractA single step non-catalytic process based on thermal evaporation of silicon monoxide has ... that the nanowires consisted of mainlytwo elements Si and O in an atomic ratio of approximately 1:2 corresponding to silicon dioxide.Photoluminescence spectra of the silica nanowires showed...

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

... thesurface of the silicon wafer at the initial stage. Self-assembly of silver nanoclusters to the dendrite structureand lack of coalescence to a compact grain ﬁlm continue tocause etching of the silicon ... in units of 2p=a, the crystalline grain size L is in units of a, with abeing the lattice constant of silicon and o(q) represents thephonon dispersion curve. G0is the geometrical sum of theinverse ... the (0 0 2) plane of silicon. Thereis a thin amorphou s layer sheathing the crystalline core of the SiNW (bottom right inset in Fig. 3), which is identiﬁedto be amorphous silicon oxide (SiOx)...

Raman spectrum of array ordered crystalline silicon nanowires

... an dominant role in the area of microelectronics materials. Silicon- based photo-electric integration is one of the highlights of todays science research. Crystal silicon is anindirect band material, ... to Ramanspectrum, we neglect the inﬂuence of silicon oxidesheath of SiNWs. It can be seen that the spectrum of the sample is very similar to that of the c-Si,except for the weak peaks at 604 ... effect of Si. The most intensive peakin the SiNWs is found to shift to the lowerfrequency and to be asymmetric. The Ramanspectra of microcrystalline silicon ﬁlms werecombined with the spectra of...

Tripathy, optical properties of nano silicon

... decreasing the thickness of the a-Si : H layer. This results in termination of dangling bonds of the sur-face Si atoms of nanocrystalline silicon. Nanocrystalline silicon thus fabricated is ... spectra of (a) nano- crystalline Si prepared by pulsed plasma processing and (b) porous silicon prepared by anodic etching using 488 nm line of Ar+ laser. Optical properties of nano -silicon ... confinement in nanometer sized crystalline silicon. The broad Raman band resembles that of density -of- state spectrum in amorphous silicon and indicates the presence of amorphous silicon like structure...

Will silicon be the photonic material of the third millenium

... version)Contents1. Why silicon photonics? 11702. Silicon photonics 11722.1. Silicon based waveguides 11722.2. Detectors 11732.3. Other photonics components 11742.4. Silicon photonic integrated ... based on silicon [10].The aim of this review is to try to give the state -of- the-art on the development of silicon photonics with the aim of settling the status and trying to weigh up whether silicon ... mechanical properties which render the processing of devices based on it easy [1],• the availability of a natural oxide of silicon, SiO2,whicheffectively passivates the surface of silicon, is...

First principles optical properties of silicon and germanium nanowires

... models.4. Optical properties of SiNWs and GeNWsIn Section 5 of the present paper, we aim to point outthe importance of the many-body eﬀects on the optica l re-sponse of some of the studied nanowires. ... axis of the wire. Further the possibility to modifytheir optical response as a function of their size has becomeone of the most challenging aspect of recent semiconductorresearch. Because of ... onset of optical absorption is foundonly in the case of GeNWs and not in the case of SiNWs.With the inclusion of the excitonic eﬀects (bottom panels)we see that an important transfer of the...

molecular dynamics studies of ultrafast laser induced phase and structural change in crystalline silicon

... occupied by one silicon lattice and each silicon lat-tice cubic contains 8 silicon atoms), is used for the study of ultra-fast laser heating. For the purpose of allowing the motions of atoms at ... layer is determined to be of the order of several tens of nanometers at ﬂuences up to two timesabove the melting threshold[24]. Residual stress and amorphization of the silicon single crystalwere ... for crystalline silicon. Each of the potentials has signiﬁcantdifferences in at least one aspect, yet the best choice of the poten-tial for corresponding study is based on the consistency of...

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