... irrespective of the growth conditions.& 2008 Elsevier B.V. All rights reserved.III-nitrides are promising semiconductor materials because of their application in optoelectronics and high-power electronic devices. ... S. TripathycaMicroelectronics Research Group, Department of Physics, University of Crete, P.O. Box 2208, 71003 Herakilon-Crete, GreecebInstitute of Electronic Structure and Laser (IESL), FORTH, ... Effect of substrate temperature on spontaneous GaN nanowire growth and optoelectronic properties A.P. Vajpeyia,b,Ã, A. Georgakilasa,b, G. Tsiakatourasa,b, K. Tsagarakia,b, M. Androulidakia,b,S.J....