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Mechanical behavior of materials 2879
MECHANICAL PROPERTIES OF MATERIALS 2008 ppt
... measure of a material’s mechanical properties, and all students of Mechanics of Materials will encounter them often However, they are not without some subtlety, especially in the case of ductile materials ... along with the value of 10,000 lb for Pf , and the problem is solved A number of materials properties are listed in the Materials Properties2 module, where we find the UTS of carbon steel to be ... 1987 Courtney, T.H., Mechanical Behavior of Materials, McGraw-Hill, New York, 1990 Hayden, H.W., W.G Moffatt and J Wulff, The Structure and Properties of Materials: Vol III Mechanical Behavior,...
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báo cáo hóa học:" The influence of a weight-bearing platform on the mechanical behavior of two Ilizarov ring fixators: tensioned wires vs. half-pins" pdf
... The influence of a weight-bearing platform on the mechanical behavior of two Ilizarov ring fixators: tensioned wires vs halfpins Jan Gessmanna*, Mustafa Citaka, Birger Jettkantb, Thomas A Schildhauera, ... unknown The aim of this study was to analyze the mechanical effects of a weight-bearing platform on the traditional all-wire, four -ring frame in comparison to a two- ring frame consisting of half-pins ... Conclusions: A weight-bearing platform has substantial influence on the biomechanical performance of an Ilizarov external fixator Half-pins induce greater stiffness to the Ilizarov external fixator and...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 1 doc
... Fitzgerald -1 9 99 14 Extracting Typical τ for Metals • τ ~1 0 -1 4 sec for metals in Drude model 3.225 © E.A Fitzgerald -1 9 99 15 Thermal Velocity • So far we have discussed drift velocity vD and scattering ... independent of magnitude of L and W Useful for working with films of thickness, t R R R 3.225 © H.L Tuller-20 01 17 How to Make Resistance Measurements Rc2 I Rc1 Rs V V/I = Rc1 + Rs + Rc2 I For Rs >> Rc1 ... © H.L Tuller-20 01 Origin of Conduction Range of Resistivity Why? 3.225 © E.A Fitzgerald -1 9 99 Response of Material to Applied Potential I I V V=f(I) Rectification, Non-linear, Non-Ohmic R Linear,...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt
... For Si, Eg=1.1eV, and let µe and µh be approximately equal at 1000cm2/V-sec (very good Si!) σ~1010cm-3*1.602x1 0-1 9*1000cm2/V-sec=1.6x1 0-6 S/m, or a resistivity ρ of about 106 ohm-m max • • One important ... atoms per cm-3 – n~10 15, p~1020/10 15~ 1 05 σ/σi~(p+n)/2ni~n/2ni~1 05! Impurities at the ppm level drastically change the conductivity ( 5- 6 orders of magnitude) 3.2 25 © E Fitzgerald-1999 18 Expected ... issue for system-on-chip applications 3.2 25 © E Fitzgerald-1999 15 Extrinsic Semiconductors • • Adding ‘correct’ impurities can lead to controlled domination of one carrier type – n-type is dominated...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 10 pps
... conductivity: σ = 4.4 10 -1 8 S cm-1 T [°C] 900 -4 800 700 600 500 10 Y-cut -5 -1 σ [S cm ] 10 -1 σ0 = 2.1 S cm EA = 105 kJ mol -6 10 -1 -7 10 3.225 10 11 10 /T [1/K] 12 13 © H.L Tuller-2001 26 13 ... Substrate: Si wafer 20 40 60 80 110 100 90 80 70 60 50 40 30 20 10 -1 0 110 100 90 80 70 60 50 40 30 20 10 -1 0 20 MFC2 Feuchte Temp CO 40 NO2 NO2kl 60 NH3 H2 Pt -1 00 resistance / Ω • Electrode: ... Tuller-2001 18 Photo Electro-chemical Etching - PEC • Electro-chemical etching h+ h+ h+ h+ semiconductor Light source • Photo electro chemical etching electrolyte h+ + - h+semiconductor + - n-type...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 9 pps
... Tuller-2001 Influence of Dopants on Electrical Conductivity of SrTiO3 log(σ / (Ωcm )-1 ) λ 0 .99 5 1,005 T = 800 °C no -1 ac -2 ce pto -3 rd op rd op ed ed -4 Sr2+ Ti4+ O 2-3 -5 acceptor donor -2 0 -1 6 ... Versatility High Strain (Pb0 .98 La0.02(Zr0.7Hf0.3)1-xTixO3 AFE FE System (C Heremans and H.L Tuller, J Euro Ceram Soc., 19, 11 39 ( 199 9).) Atmosphere dependent conductivity (I Kosacki and H.L Tuller, Sensors ... SrTiO3 Sr(Ti0,65Fe0,35)O3 m = 0,2 95 0°C 90 0°C 0,1 Response times T / °C t90 / ms 90 0 6.5 800 26 750 83 185 700 850°C 800°C 750°C 1 0-2 0 1 0-1 5 1 0-1 0 pO2 / bar 3.225 1 0-5 100 [1] Menesklou et al, MRS...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 3 pot
... are discrete 3. 225 © E Fitzgerald-1999 24 12 Representation of E,k for 1-D Material E= states electrons h 2k p = 2m 2m E EF All e- in box accounted for m=+1/2 ,-1 /2 En+1 En En-1 Quasi-continuous ... k y ) E(kx,ky) 2m ky kx 3. 225 © E Fitzgerald-1999 Representation of E,k for 3- D Material kz Ε(kx,ky,kz) ky kF E= m π2 2mE h3 Fermi Surface or Fermi Sphere k F = (3 n )3 vF = 2m kx 2π/L g (E) ... 1 0-8 cm in size • Electron waves in solid are λ=h/p~1 0-8 cm in size • Certain wavelengths of valence electrons will diffract! 3. 225 © E Fitzgerald-1999 Diffraction Picture of the Origin of Band...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 6 pps
... when you join these together? 3.225 © E Fitzgerald-1999 11 Drift and Diffusion - - - - - + + + + + + + + Holes diffuse Electrons diffuse - - - - - - + + + + E + + + + An electric field forms due ... force of diffusion until EF is flat - - + + + + Holes diffuse Electrons diffuse 3.225 © E Fitzgerald-1999 13 Space Charge, Electric Field and Potential - - - - - - + + + + xp + + + + Metallurgical ... Devices 3.225 The p-n Junction (The Diode) • Note that dopants move the fermi energy from mid-gap towards either the valence band edge (p-type) or the conduction band edge (n-type) n-type material...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf
... of positive and negative ions 3.225 © E Fitzgerald-1999 © H.L Tuller, 2001 Ferroelectrics Applications • Capacitors • Non-volatile memories • Photorefractive materials 3.225 Characteristics of ... τ=9.5x1 0-1 1 sec, ω~1010 microwave oven, transmission of E-M waves 3.225 © E Fitzgerald-1999 19 Dielectric Constant vs Frequency • Completely general ε due to the localized charge in materials ... Optical Fiber 3.225 © E Fitzgerald-1999 © E Fitzgerald-1999 Characteristics of Optical Fiber 3.225 Colors Produced by Chromium Above: alexandrite, emerald, and ruby Center: carbonate, chloride,...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps
... =0,1,2,…,n-1 ml =- l, - l+1,…,0,…, l , -1 (ms=+ or - 1/2) U(r) -1 3.6eV 3.225 © E Fitzgerald-1999 16 Relationship between Quantum Numbers s s p s p d Origin of the periodic table © E Fitzgerald-1999 ... © E Fitzgerald-1999 © H.L Tuller-2001 Energy Gap and Mobility Trends Material Eg(eV)°K µn(cm2/V·s) GaN 3.39 150 AlAs 2.3 180 GaP 2 .4 2,100 GaAs 1.53 16,000 InP 1 .41 44 ,000 InAs 0 .43 120,000 InSb ... 1,000,000 Remember that: 3.225 µ= eτ m* and 1 ∂2E = m * h ∂k 2 Metals and Insulators • EF in mid-band area: free e-, metallic • EF near band edge – EF in or near kT of band edge: semimetal – EF in gap:...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx
... magnetic material Material Type χ Paramagnetic +1 0-5 -1 0-4 Diamagnetic -1 0-8 -1 0-5 Ferromagnetic +105 3.225 © E Fitzgerald-1999 Microscopic Source of Magnetization • No monopoles • magnetic dipole ... E~-S1S2 > Energy if Fe, Ni, Co -> J positive! Other elements J is negative Rule of Thumb: interatomic distance r ≡ > 2ra 2(atomic radius) J is a function of distance! 3.225 © E Fitzgerald-1999 ... Spin Moment - BH µs e Q M eh S = − g0 S z = − g0µ B SZ 2mc mc S Z = mS = ± g = for electron spin µs = − +µBH +(1/2)µBg0H E(H=0) -( 1/2)µBg0H 3.225 © E Fitzgerald-1999 Exchange E~-JS1S2 J negative,...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 2 pot
... Representation of Waves sin(kx-ωt), cos(kx-ωt), and e-i(kx-ωt) are all waves e -i(kx-ωt) is the complex one and is the most general imaginary A θ Acosθ iAsinθ real e iθ=cosθ+isinθ 3 .22 5 © E.A Fitzgerald-1999 ... metals • Valence =2 and 3, magnitude and sign suggest problems 3 .22 5 © E.A Fitzgerald-1999 25 13 Response of Free e- to AC Electric Fields • Microscopic picture EZ = EO e − iωt e- B=0 in conductor, ... cvreal=cvclass/100; vreal2=vclass2*10 3 .22 5 ne 2 m Κ kb = T σ 2 e ~C! © E.A Fitzgerald-1999 10 Wiedmann-Franz ‘Success’ Thermoelectric Effect Exposed Failure when cv and v2 are not both in...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 7 pptx
... 2.25 5.9 Electronic and ionic polarisation H2O 1 .77 80.4 Electronic, ionic, and molecular polarisation Polarization that is active depends on material and frequency 3.225 © E Fitzgerald-1999 Microscopic ... 3.225 © E Fitzgerald-1999 15 Ionic Polarizability Eloc •2 coupled differential eqn’s •1 for + ions •1 for - ions - + - + M= p u- u+ Ionic materials always have ionic and electronic polarization, ... difference (only depends on charge per unit area) 3.225 © E Fitzgerald-1999 Material Polarization + +- + + - + +- ++ - ++ - + + - P E D = ε o E + P = εE ε = ε rε o εr = 1+ P = 1+ χ εoE C = ε rε o...
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