Micromagnetic simulation on magnetic nanostructures and their applications

... review on the magnetic nanostructures and their applications will be provided in the following sections 1.1 Micromagnetics 1.1.1 Theory of Operation Chapter 1: Introduction Micromagnetic simulation ... description of the time evolution of spin configuration With the help of micromagnetic simulation, we can obtain direct visualization of magnetization conﬁgurations, static and dynamic magnetic ... apply the micormagnetic simulation on different magnetic nanostructures (i.e nanoring, nanodisc, nanorod, etc.) and their possible applications Generally, the application of magnetic nanostructures...

báo cáo hóa học:" Research Article On Some Integral Inequalities on Time Scales and Their Applications" pdf

... Mathematical Analysis and Applications, vol 319, no 2, pp 802–814, 2006 W N Li and W Sheng, Some nonlinear integral inequalities on time scales, ” Journal of Inequalities and Applications, Article ID 70465, ... estimates on integral inequalities with time scale,” Journal of Inequalities in Pure and Applied Mathematics, vol 7, no 4, article 143, p 8, 2006 W N Li, Some new dynamic inequalities on time scales, ” ... N Li, Some Pachpatte type inequalities on time scales, ” Computers & Mathematics with Applications, vol 57, no 2, pp 275–282, 2009 10 W N Li, Some delay integral inequalities on time scales, ”...

Báo cáo hóa học: "Research Article On Some Quasimetrics and Their Applications" ppt

... quasi-metric on E Let ρ be a quasi-metric on E and γ a non-negative symmetric function on E × E such that γ ∼ ρ, then γ is a quasi-metric on E Let ρ1 and ρ2 be two quasimetrics on E, then for ... Inequalities and Applications 3.4 On the Operator − 1/A Au 11 on 0, with u u1 Let A be a continuous function on 0, , which is positive and diﬀerentiable on 0, We assume that t → 1/ A t is integrable on ... fg and the composition of functions g ◦ f are nonnegative nondecreasing functions on 0, ∞ So we need to prove that these functions satisfy 2.2 Let a > 0, then from 2.2 , there exists a constant...

Báo cáo hóa học: " Research Article New Inequalities on Fractal Analysis and Their Applications" doc

... measure, Hausdorff dimension, packing measure, packing dimension, Minkowski contents, box dimensions, and modified box dimensions Let U be a nonempty subset of Rn As usual, one may define the diameter ... helpful comments and a careful reading of the manuscript D.-C Chang and Y Xu 17 References [1] K Falconer, Fractal Geometry: Mathematical Foundations and Applications, John Wiley & Sons, Chichester, ... Haase, On the dimension of product measures,” Mathematika, vol 37, no 2, pp 316–323, 1990 [9] E M Stein and R Shakarchi, Real Analysis: Measure Theory, Integration, and Hilbert Spaces, Princeton...

Synthesis of metal oxide nanostructures and their applications as lithium ion battery anodes

... IONP@PC and IONP@mC-600 Insets of C and F: SAED patterns of IONP@PC and IONP@mC-600 95 Figure 6-4: Particle size distributions of (A) IONP@PC and (B) IONP@mC-600 96 Figure 6-5 TEM images of IONP@mC-600 ... iron oxides and lithium was in the 1980s.[51] However, the nature of the reaction was not clear until J M Tarascon and his coworkers reported the conversion reaction between transition metal oxides ... as TiO2[30] and Li4Ti5O12[17]; (2) alloying based materials, such as Si,[31] Ge,[32] Sn,[33] and their oxides/composites; (3) conversion reaction based materials, including transition metal oxides,[34]...

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Synthesis of superparamagnetic nanostructures and their magnetic resonance imaging applications

... SYNTHESIS OF SUPERPARMAGNETIC NANOSTRUCTURES AND THEIR MAGNETIC RESONANCE IMAGING APPLICATIONS CHOO SHI GUANG, EUGENE (B APPL SCI., HONS), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF ... Study of Magnetic Nanostructures for Off -Resonance MR Spectroscopic Imaging 127 6.1 Motivations and Design of Experiment 127 6.2 Preparation and Characterization of Manganese ... image of IONC-b5 (Inset: SAED ring patterns of IONC-b5); (h) XRD profile of IONC-b5; and (i) VSM profiles of core SPION-7nm (∆) and IONC-b5 (□) (Page 96) Figure 5-3: (a) M(H) curves of SPION-4nm and...

Báo cáo hóa học: " On the Geometrical Characteristics of Three-Dimensional Wireless Ad Hoc Networks and Their Applications" pptx

... represents the local topological status of the wireless ad hoc network To a certain extent, the node locations and their corresponding degrees would affect the configuration of the wireless ad hoc network ... from (3) and reflects the distribution of A in the Y − Z plane Thus, the problem in three-dimensional space can be reduced to the combination of one in one-dimension and one in two-dimension It EURASIP ... relationship between the mean value of the max-flow and the node number of a wireless ad hoc network when the covering radius keeps constant Another important observation is that, if the covering radius...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 1

... properties of the InGaN quantum structures, including InGaN/ GaN quantum wells and InGaN quantum dots 1. 3 InGaN/ GaN quantum wells and quantum dots InGaN is an important alloy for fabricating III-nitride ... Electron mobility μ (cm2 V -1 s -1) Thermal conductivity χ (W K -1 cm -1) 9.0 4.0 9.7 3.0 12 .8 0.4 11 .8 0.25 3.0 2.0 2.0 1. 0 13 50 800 6000 13 00 1. 3 4.9 0.5 1. 5 Melting point (°C) 27 91 Sublimes T >18 27 12 38 ... following equation: T =1- qp - qns (1. 7) where qns is the non -saturable loss 28 Chapter Introduction Figure 1. 12 Nonlinear transmittance from a saturable absorber [Xiang2003] Sections 1. 4 .1 and 1. 4.2...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 2

... second) is used, and there are 25 6 or 5 12 samples in each scanning Here, one sample represents one line of scanning, which then consists of 25 6 or 5 12 sampling points 2. 3.4 Scanning electron microscopy ... excition transition and bound exciton transition Eb is the free exciton binding energy and Ebx is the bound exciton binding energy In addition to the radiative transitions, there are also non-radiative ... certain defect level, the binding energy is determined by the bandgap, free exciton binding energy, and the bound exciton binding energy, as illustrated in Fig 2. 6 Figure 2. 6 Illustration for...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 3

... Section 3. 3 will be dedicated to the study on the effects of V-pits on the morphological and optical properties of InGaN/ GaN quantum wells Finally, in Section 3. 4, the InGaN/ GaN quantum dot saturable ... this study will only be focused on the saturable absorbers and SESAMs operating in the blue region In this chapter, Section 3. 1 will be focused on the nonlinear property of the InGaN/ GaN quantum ... presented 79 Chapter 3. 1 Saturable Absorbers with GaN- based Quantum Structures InGaN/ GaN quantum well saturable absorbers In this work, InGaN/ GaN MQW samples with different numbers of quantum wells...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 4

... coating After the separate study and calibration, the DBR and AR coatings were finally incorporated with the InGaN/ GaN 8-QW saturable absorber presented in 148 Chapter Design & Fabrication of GaN- based ... the GaN- based monolithic DBRs as shown in Fig 4. 1 [Ponce2003; Moustakas2001; Waldrip2001; Yao20 04; Lin20 04] In addition, in Fig 4. 10, the oscillation fringes outside the high-reflective stopband ... Schematic structures of (a) single quarter-layer AR coating and (b) two-layer quarter/quarter AR coating 4. 3 Design and simulation of DBR and AR coatings In Chapters 3, the GaN- based saturable absorbers...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 5

... fabricated by the InGaN/ GaN 8-QW saturable absorber, as discussed in Chapter 5. 1 Simulation First of all, the origin of the interference fringes within the stopband of the GaN- based SESAM was investigated ... Furthermore, after thinning the GaN buffer, the period of the interference-induced oscillation fringes was increased and there was only one interference minimum falling into the DBR stopband as can be ... sketched in Fig 5. 1, and it shows severe interference-induced reflectance fluctuations over the DBR stopband Comparing Fig 5. 3 (a) with the corresponding simulation result, Fig 5. 2 (a), one can...

Study on ingan gan quantum structures and their applications in semiconductor saturable absorber mirror 6

... quantum wells and quantum dots, operating in the blue wavelength region were investigated For InGaN/ GaN quantum well saturable absorbers, a novel and convenient method to reduce the absorption ... and contributed to different PL emission bands For quantum dot saturable absorbers, in this work, a 3-layer InGaN quantum dot sample was fabricated and its nonlinear property as a saturable absorber ... Chapter Conclusions and Suggested Future Work 6. 1.1 Saturable absorbers with GaN- based quantum structures In this work, saturable absorbers fabricated with GaN- based quantum structures, comprising...

Magnetic properties of co ta thin films and their applications in magnetic tunnel junctions

... Ta ratio, (ii) Co- Ta of 15% Ta ratio, (iii) Co- Ta of 20% Ta ratio and (iv) Co- Ta of 25% Ta ratio 68 Fig 4.6.4 MFM images of (i) Co, (ii) Co- Ta (5%), (iii) Co- Ta (10%), (iv) Co- Ta (15%), (v) Co- Ta ... Co- Ta (20%) and (vi) Co- Ta (25%) 69 Fig 4.6.5 TEM images showing the crystal structures of (i) Co- Ta of 10% Ta ratio, (ii) Co- Ta of 15% Ta ratio, (iii) Co- Ta of 20% Ta ratio and (iv) Co- Ta of ... Co as Top Electrode 63 iii Table of contents 4.6 4.7 Co- Ta Alloy 65 4.6.1: Calibration of Co and Ta 65 4.6.2: Coercivity of Co- Ta Films 66 4.6.3: TEM of Co- Ta Grains 68 4.6.4: MFM Images of Co- Ta...

Tài liệu RF MEMS And Their Applications P2 docx

... Cl (1.6) (1.7) In Equations (1.6) and (1.7) Ll and Cl represent the inductance and capacitance per unit length of the line, and ε and µ are the permittivity and permeability of the transmission ... total reluctance of the magnetic circuit, and N is the number of turns in the coil The ratio on the right-hand side of Equation (1.25) 24 MEMS AND RF MEMS is the electromechanical coupling The ... following piezoelectric coupling equations are used: 20 MEMS AND RF MEMS Q = d1 F + C0 V (1.10) x = d2 V + Cm F (1.11) where C0 is the free capacitance and Cm the short-circuit compliance of the transducer...

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