Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... Iron- catalytic growth of prism- shaped single- crystal silicon nanowires by chemical vapor deposition of silane Chen Lia,b,1, Chi Gua,b,1, Zengtao ... 2005Abstract Single- crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4gas at 450 °C.Fe particles which were located at the tip of the CNTs ... images of silicon nanostructures growth by diﬀerent pyrolysis time of silane. (a) a triangle -shaped silicon tip grown on a CNT by 30-minpyrolysis time. (b) A rectangle silicon grown on a CNT by...

Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

... Deposition of carbon nanotubes on Si nanowires by chemical vapor deposition Y.F. Zhang, Y.H. Tang, Y. Zhang, C.S. Lee, I. Bello, S.T. Lee*Center of Super-Diamond & ... SiCcan be formed by carbon atoms diusing into theSi NWs, CNTs could not be formed very well onthe surface of nanowires because of both thevolume change of the nanowires and breaking of the carbon ... nanoscalematerials to synthesize a composite of CNTs andSiNWs in transversal. Here, we report the syn-thesis of this composite material by a hot ®lament chemical vapor deposition (HFCVD) method.The results...

Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

... average resistivity of all heavily doped(1019cm−3) nanowires is found to be 83 m cm, avalue higher by a factor of 14 than expected from thedesign data of 6 m cm (a factor of 7 for the largestwires). ... n-doped by arsenic implantation. The Si top layer is then locally patterned using localoxidation induced under the biased tip of the AFM. The active part of the device is ÿnally obtained by silicon ... 999–1002the silicon top-layer, even for ultra-thin silicon layers(thickness as low as 5–20 nm), and allows to obtaina very sharp interface silicon layer=buried oxide. Theelectrical conductance of silicon...

Báo cáo " Growth of CdS thin films by chemical bath deposition technique " pptx

... VNU Journal of Science, Mathematics - Physics 24 (2008) 119-123 119 Growth of CdS thin films by chemical bath deposition technique Be Xuan Hop*, Ha Van Trinh, ... [4], molecular beam epitaxy [5], spray pyrolysis [6], chemical bath deposition [7]. Chemical bath deposition is a method of growing thin films of certain materials on a substrate immersed in an ... can be employed in the manufacture of the optoelectronic devices. The deposition of CdS film has been explored by various techniques, such as thermal evaporation [3], sputtering [4], molecular...

Direct growth of amorphous silica nanowires by solid state transformation of sio2 films

... formation of a titanium oxide (TiOx) phase by removal of oxygen from the silica layer [9]. The re-duction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs. The growth of silica ... suppresses thedecomposition of TiN, as a result, it limits the growth of a-SiONWs nanowires by the mechanism. Oxygen seemsFig. 4. (a) A TEM photograph of a cross section of the substrate with the ... andnitrogen were detected by the EELS in the nanowires. The carbon on the shell is supplied by thermal decom-position of CH4 by nickel. No carbon shells were ob-served from the silica nanowires grown...

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... HRTEM image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single crystal. (e) EDS line mapping of Si nanowires using Au catalyst. (f) EDS line mapping of Si nanowires ... Au, without loss of components by chemical reactionor evaporation. Thus, it has been demonstrated that Pt is a stablecatalyst for the VLS mechanism. The growth rate of Si nanowires with Au ... degrade the performance of Sinanowire devices even if it diffuses into the nanowires. Somestudies have reported on the growth of Si nanowires using Ptwith a precursor of SiH4or SiCl4[4–6]....

Liquid-Delivery Metal-Organic Chemical Vapour Deposition of Perovskites and Perovskite-Like Compounds pdf

... the oriented growth of a crystalline material on a single crystal surface. Epitaxial growth is classified in: a) homoepitaxy - when film and substrate 1. Fundamentals 13 consist of the same ... description of the growth modes the effect of mismatch will be taken into account. These main growth modes are a) the layer -by- layer (Frank-van der Merwe) growth, e.g., in the case of a very ... layer -by- layer to 3D island growth. Which of these mechanisms is operative depends on the quality and termination of the substrate surface (see Section 3.1) and on the kinetics of the film growth, ...

Báo cáo khoa học: Bridging the gap between in silico and cell-based analysis of the nuclear factor-jB signaling pathway by in vitro studies of IKK2 ppt

... concentrations of GST-IjBaat several fixed concentrations of ATP and vice versa (order of binding experiments). Lineweaver–Burk double recipro-cal plots were generated by linear least squares fits of thedata. ... ratio of apparent dissociation con-stants for binding GST-IjBa in the presence and absence of ATP, and the value of a indicates whether the binding of one substrate (ATP) affects the affinity of ... Vanek M, Pulfer R, Kobel T,Peter J, Zerwes HG, Hofstetter H & Eder J (1999) Thekinetics of association and phosphorylation of IkappaBisoforms by IkappaB kinase 2 correlate with their cellu-lar...

A new mechanism for modulation of schottky barrier heights on silicon nanowires

... werecreated. By oxidation of the wires in dry atmosphere at800 1C for 90 min, the wires were embedded in a SiO2shell of about 10 nm, with a silicon core of 15–20 nm width.Following evaporation ... started from an SOI wafer with a silicon ﬁlmthickness of 55 nm and a buried oxide layer (BOX) of 145 nm. After thinning the silicon ﬁlm to 30 nm andperforming patterning by e-beam lithography and ... mechanism for modulation of Schottky barrier heightson silicon nanowires J. PiscatorÃ, O. Engstro¨mDepartment of Microtechnology and Nanoscience, MC2, Chalmers University of Technology, SE-412...

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... (2007) 153–157Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. YangÃDepartment of Physics and Quantum-Functional ... evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substratessynthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The Au–Si islands are formed by ... control of the dimensions and alignments of the NWs is required to employ them as elements of nanodevices. Vapor liquid–solid (VLS) growth method has beenwidely employed for the NW growth of various...

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