... NANOPHOTONICS WITH SURFACE PLASMONS Advances in NANO-OPTICS AND NANO-PHOTONICS Series Editors Satoshi Kawata Department of Applied Physics Osaka University, Japan Vladimir M Shalaev Purdue ... Cataloging in Publication Data A catalogue record for this book is available from the Library of Congress British Library Cataloguing in Publication Data A catalogue record for this book is available ... as extraordinary light transmission, giant eld enhancement, SP nano-guides, and recently emerged metamaterials that are often based on plamonic nanostructures Nanoplasmonics-based metamaterials...
... Figure 26 The markers were pre-fabricated to help in locating a nanowire on a large area substrate With markers and information on the relative coordinates of the nanowires available, it was possible ... electrons with the atoms of the sample produces signals and information of the sample surface such as composition, topography and electrical conductivity A SEM has the capability to image a sample with ... a chance of unintentional exposure of any part of the PMMA when the beam was left on while moving After current measurement, the e-beam was moved to a marker at the edge of the sample that was...
... analysis of Langmuir probe characterization for ECR plasma Indian J Phys 80: 1011–1015 Jain S K, Jain A, Hannurkar P R, Kotaiah S 2007 Characterization of plasma parameter, first beam results, and ... solutions and precision measurements Nucl Instr Meth Phys Res A2 98: 13–21 Bhawalkar D D, Bhujle A G, Fatnani P, Hannurkar P R, Joshi S C, Karmarkar M G, Kotaiah S, Mhaskar S P, Pande S A, Prabhu S ... development at CEA/Saclay Rev Sci Instrum 75(5): 1414–1416 http://laacg1.lanl.gov Poisson code, Reference manual, LA-UR-87-126, LANL 1987 Jain S K, Jain A, Sharma D, Hannurkar P R 2006 Acquisition and analysis...
... film annealed at 350 °C is greater than that for annealing at 450 °C owing to larger surface area of the former for enhanced dye loading A higher temperature of annealing of the latter might aid ... length increased with increasing duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) ... anodization can be effectively removed with ultrasonic vibration of the ATO films in deionized water containing a small proportion of Al2O3 particles of average size 300 nm Parts a and b of Figure...
... by an electrochemical impedance analyzer (Compacstat, Ivium Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out witha bias illumination ... three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable material for application as a counter electrode ... distance between the FTO and the stainless steel substrate was kept at cm, and a voltage of 30 V was applied The counter electrodes were annealed at 600°C for min, after which they were gradually...
... by an electrochemical impedance analyzer (Compacstat, Ivium Technologies, Fernandina Beach, FL, USA) Electrochemical impedance spectroscopy measurements were carried out witha bias illumination ... three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable material for application as a counter electrode ... distance between the FTO and the stainless steel substrate was kept at cm, and a voltage of 30 V was applied The counter electrodes were annealed at 600°C for min, after which they were gradually...
... technology are fabricated The apex of the nanotip can reach down to nm in radius By using this method, a large-area, well-aligned, and patternable nanotip arraywith high aspect ratio, ultra-sharp tip ... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... stable and excellent field emission property against environmental disturbance Methods Fabrication of the nanotip The ultra-sharp nanotip array was fabricated using a commercially available 6-in.,...
... in a certain degree of parasitic absorption, it is demonstrated in this thesis that the advantages far outweigh the disadvantages in which an increasing number of DBR unit blocks lead to (a) an ... increased peak reflectance and (b) an increased conductivity of the combined stacks For the target peak reflectance wavelength range of 900 ± 200 nm, a peak reflectance of over 90% and a sheet ... In each graph, two band diagrams are shown: (i) at the a- Si:H rear contact region and (ii) at the centre of the rear passivated region 125 Figure 6.4 Simulated solar cell J-V parameters...
... fabrication of plasmonic nanostructures over a large area using scalable, rapid and inexpensive nanofabrication tools, such as laser nanofabrication and thermal annealing, with the aim of implementing ... bottom-left of the plot (a) with the scale bar of 500 nm 100 Figure 5.1 Schematic diagram ofa periodic arrayof nanorods on glass substrate An arrayof nanorods has length , width , and periods and ... for nanorod array 139 6.2.1 Far -field optical properties of nanorod arraywith various lattice constants 140 viii 6.2.2 Near -field enhancements of nanorod arraywith various lattice...
... (a) Image of the 2D planar metamaterials, (b) image ofa 3D terahertz metamaterials tube fabricated at a diameter of 4.00 mm, and (c) illustration of the fabrication process of the 3D metamaterials ... metamaterials fabricated by laser micro-lens array lithography: (a) large-area ASRR array and (b) single ASRR with different variable gap sizes 68 Figure Transmission spectra of ... single layer metamaterials and the overall multilayer metamaterials A broadband filter witha band width of 0.38 THz was constructed The resonance dips from the overall tranmission spectra match with...
... 5.1 (a) Cross-sectional TEM image ofa gate stack of the fabricated AlGaN/GaN MOS-HEMT (b) Zoomed-in image ofa TaN/Al2O3/AlGaN stack (d) Cross-sectional TEM image of the TaN/Al2O3/AlGaN/GaN/Buffer ... illumination[47], and various gas plasma treatments, 21 Device Passivation Surface Passivation Gate Dielectric AlGaN GaN Fig 2.1 Schematic diagram illustrating two approaches for passivating AlGaN/GaN ... forming gas anneal Al/Ti Al/Ti TaN (e) Optical image of the fabricated TaN/HfAlO/GaN capacitor Fig 2.3 (a) PDA was used to improve the quality of the as-deposited HfAlO film 100 nm of TaN was deposited...
... external bias MSM photodetectors possess the advantage of low capacitance and relative ease of fabrication The intrinsically low capacitance resulting from its configuration has always been utilized ... reported by S Assefa et al [2.44] With low bias voltage of ~1.5 V, the electric field in the immediate vicinity of the metal contact is already high enough to initiate avalanche amplification Although ... high quality Ge epi-layer as v the gate of JFET was achieved using a novel epi-growth technique By laser surfaceillumination of mW on the Ge gate, an Ion/Ioff ratio up to 185 was achieved at wavelength...
... has made a series of attempts at fabricating advanced composite membranes for gas separation with material like Matrimid PI, polymer/zeolite mixed matrix material and carbon/zeolite mixed matrix ... finding a more stable material in scale-up of these separations Membrane technology has shared a large market in separation territories, nowadays The rapidly increasing use of membranes for gas separation ... 1994) Among these emerging applications, the separation of hydrocarbons and chlorofluoro carbon vapors from air appears to be rapidly transferred to the status of commercialization Separation of...
... molecular mass of ambient gases The mass ratio between Si plasma plume and ambient gas atoms (Ar, He) has a major effect on the plume dynamics in the 0– Torr pressure range [9] The heavier gas has a ... (LEDs) are extremely desirable for the realization of integrated optical signal and electronic data processing, as their fabrication and integration are compatible with current electronic ultralarge-scale-integration ... identical with that of Si target for other droplets On the other hand, the Raman spectrum of the background film shows a weak crystalline peak at 515 cm-1 and the features of a- Si witha broad band...
... memory arraywith memory cells separated by a resistive layer Passive array or crosspoint memories Crosspoint arrays with cells separated by a resistive layer (1R) can have potentially smaller ... 1.4 Schematic structure ofa nanocrystal flash memory cell Nanocrystal storage uses a silicon nanocrystal as the floating gate, and is also called nano-floating gate memory (NFGM) Instead of injecting ... stores each bit of data in a separate capacitor As the real-world capacitors are not ideal and have tendency to leak electrons, the information eventually fades unless the capacitor charge is refreshed...
... HRTEM image for sample A4 65 FIG 3.3 Raman spectra of samples A1 , A2 , A3 , A4 , A6 and bulk Ge 66 The dotted lines indicate the peak positions of amorphous Ge and GaAs substrate at the position of 275, ... ratio as a function of temperature for sample A4 ; (c) MR curves for samples A2 , A3 , A4 , and A6 at 4.2 K FIG 3.27 (a) Hall effect for sample A4 at different temperatures; (b) 99 coercivity as a ... function of temperature for sample A4 ; (c) normalized temperature dependence of anomalous Hall resistance for samples A4 and A6 ; (d) Hall resistance as a function of temperature at different magnetic...
... ii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes 2.2 WANG KAI YU Characterization of Structural Parameters of UF hollow fiber membranes from solute separation ... 75 iii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes 3.2 WANG KAI YU Fundamentals of the Characterization Scheme of Nanofiltration Membranes Structure ... Devalopment and Applications of Nanofiltration Membranes 15 1.2.1 Nanofiltration separation mechanisms 18 1.2.2 Nanofiltration separation models 22 1.2.3 Fabrication of nanofiltration...
... power and high frequency operations Table 1.1: Summary of key material parameters for AlGaAs/GaAs, 4H SiC and AlGaN/GaN transistors [21] Metric AlGaAs/GaAs 4H SiC AlGaN/GaN Energy Bandgap (eV) ... chemicals, make AlN an attractive material for electronic packaging applications The wide bandgap is also the reason for AlN to be touted as an insulating material in semiconductor device applications ... research of GaN, one of the major difficulties is the lack ofa suitable material that is lattice matched and thermally compatible with GaN GaN, AlN and InN have been grown primarily on sapphire,...
... laterally instead of being stacked as in the vertical spin valve Figure 1.1 (a) and (b) shows a general schematic ofa conventional vertical spin valve and a lateral spin valve respectively (a) ... detector Anti-parallel magnetization – Low output Figure 2.3 Lateral spin valves with (a) parallel magnetization and (b) antiparallel magnetization of the FM injector and detector, giving rise to a ... Last, S Hacia, M Wahle, S F Fischer and U Kunze, J Appl Phys 96, 6706 (2004) 21 Chapter Three: Fabrication and characterization of lateral spin valves CHAPTER THREE FABRICATION AND CHARACTERIZATION...
... the array fashion and was favorable to form a square array Thirdly, the effectof pre-heating treatment on the photonic bandgap properties of silica colloidal crystals was also explored by heating ... beads: a) view in a large area; b) oblique view along a crack; c) view in large magnification; d) square array observed in the colloidal crystal Figure 2. 2a shows a top view ofa relative large ... view of 32 the crystal in large magnification The (111) face (hexagonal array) can be found in most area of the surface, but the (100) face (square array) can also be observed The proportion of...