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Modelling and simulation of ion implantation induced damage

Modelling and simulation of ion implantation induced damage

Modelling and simulation of ion implantation induced damage

... crystal structure Understanding of ion implantation induced damage is crucial as it affects device performance In addition, modeling and simulation of ion implantation induced damage is complicated ... fabrication of transistors, it is essential to understand the impact of a buried oxide interface on defect evolution and dopant diffusion 1.1.2 Modeling and Simulation of Ion Implantation Induced Damage ... Experimental observations of ion- implantation induced damage accumulation In this section, an overview of experimental findings on the dependence of ionimplantation parameters on damage accumulation is presented...
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New trends on urban goods movement: modelling and simulation of e-commerce distribution docx

New trends on urban goods movement: modelling and simulation of e-commerce distribution docx

... settings: determination of the destinations and modelling of the O-D interactions and single trips Routes construction: their simulation is got by trip chain aggregation The combining of trips to a ... consumer behaviour in the supply chain, Russo and Comi (2004) propose a conceptual analysis of the end-consumer movements between the shops zone (d) and the consumption zone (o) on the one hand, ... improvements on route optimisation and the impacts of trip substitution In this way, a in-depth study of new distribution trends, such as collaboration, logistics sharing and the usage of route optimisation...
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Modelling and simulation of faceted boundary structures and dynamics in FCC crystalline materials

Modelling and simulation of faceted boundary structures and dynamics in FCC crystalline materials

... most special type of faceted boundary is the twin boundary Various types of twin boundaries including deformation twins, transformation twins and growth twins with twin sizes ranging from a few ... studies indicate the ultrahigh strength of nanotwinned crystalline metals is related to nanotwin induced interface strengthening The increase in strength with decreasing grain size/twin spacing is ... twinning plane The plane defined by the intersection of K1 and K2 is the shearing plane The two directions η1 and η2 , lying in K1 and K2 , are perpendicular to the line of intersection of K1 and...
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Modelling and simulation of MEMS gyroscope

Modelling and simulation of MEMS gyroscope

... the modelling and simulation of the vibratory rate MEMS gyroscope and the critical phenomena on quadrature movement are presented At first, modelling of the driving and sensing structures of the ... Representation of Mechanical System 45 4.2 Simulation of Microgyroscope with Balanced Comb Drive 47 4.2.1 Simulation Models of Microgyroscope 47 4.2.2 Simulation Results and Discussions ... displacements of the asymmetric comb drive 67 Figure 4.18 Spectrums of x and y displacements of the microgyroscope 67 Figure 4.19 Lissajous figure of x and y displacements of the microgyroscope...
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COST ACTION E36 Modelling and simulation in pulp and paper industry Proceedings of Model Validation Workshop pot

COST ACTION E36 Modelling and simulation in pulp and paper industry Proceedings of Model Validation Workshop pot

... reduction COST ACTION E36 Modelling and simulation in pulp and paper industry Proceedings of Model Validation Workshop Espoo, Finland, October, 2005 Edited by Johannes Kappen, PTS, Germany Jussi Manninen, ... FI02044 VTT, Finland phone internat + 358 20 722 111, fax + 358 20 722 5000 Preface COST E36 is a European Action on modelling and simulation in the pulp and paper industry This instrument has ... Tampere University of Technology, Vice Chairman of COST E36; Finland Opening remarks J Manninen, VTT, Chair of Working Group A, Finland Generalization and validation of mathematical models for P&P...
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Báo cáo hóa học:

Báo cáo hóa học: " A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping" docx

... The top intrinsic part is converted to n-type f SEM image of an SOG-coated NW g A p–n junction NW after the P ion implantation and removal of the SOG h SEM image of a p–n junction NW 3.2 1013 cm-2, ... rectangular dopant profile The implantation energies were 45 and 25 keV corresponding to doses of 1.3 1014 and 123 Fig The scheme of fabricating axial p–n junction Si NWs a An as-grown p–i NW b scanning ... heavy mass compared to phosphorus, the Au caps on top of the NWs were removed (Fig 1c) by an aqueous solution of KI and I2, a standard Au etchant This resulted in the reduction in the average length...
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Báo cáo vật lý:

Báo cáo vật lý: "MODELLING AND SIMULATION STUDY OF VISIBLE EMISSION TRANSMISSIVITY OF SILICON RELATED TO SINGLE AND MULTILAYER ANTIREFLECTION COATINGS" potx

... [6–8]: Modelling and Simulation Study of Visible Emission IR ⎛ n − ⎞ =⎜ ⎟ IE ⎝ n + ⎠ 18 (1) In our optical model for increasing the transmissivity of visible emission of Si related to Figure 2, the ... medium in the far red region of 720–750 nm This paper reports the design and simulation of the transmissivity of single and multilayer coatings; and also reports the results of each design at the central ... the model and basic formula of single and multilayer Journal of Physical Science, Vol 17(2), 15–26, 2006 17 antireflection coatings of Si, SiO2 and Ge for increasing transmittance of Si as active...
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Instability study of soft materials   modelling and simulation

Instability study of soft materials modelling and simulation

... focused on the modeling and simulation of (1) surface instability, (2) cavitation instability and (3) humidity– driven bifurcation of soft materials of hydrogels and elastomers The goal is to ... Journal of Solids and Structures 47, pp 2034–2042 Wong, W.H., Guo, T.F., Zhang, Y.W., Cheng, L., 2010 Surface instability maps for soft materials Soft Matter 6, pp 5743-5750 Paper is part of Soft ... initiations and mechanisms of these instabilities in soft materials from mechanics viewpoint through numerical simulation 1.1 Surface Instability – Motivations A surface of a highly deformable soft material...
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Carbon rich silicon (si1 ycy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy

Carbon rich silicon (si1 ycy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy

... CHARACTERIZATION OF CARBON IN SILICON 38 3.1 38 Carbon in silicon 3.1.1 Epitaxy Incorporation of carbon 3.1.2 Maximizing substitutional carbon incorporation 3.2 Quantification of the carbon content ... suppression of boron diffusion [19-21] and elimination of implantation EOR defects [22, 23] in the presence of carbon The combined effects of dopant diffusion suppression and defects elimination ... incorporated carbon The suppression of boron diffusion in the presence of carbon has found its way into the fabrication of silicon devices Carbon application has been focused in exploiting its function...
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Simulation, modelling and fabrication of novel devices with steep subthreshold slope

Simulation, modelling and fabrication of novel devices with steep subthreshold slope

... Both devices have a LG of 60 nm and LI of 60 nm with and EOT of 30 Å The elevated I-region (TI) for both Si RSD and Si0.75Ge0.25 RSD is 30 nm Excellent subthreshold swing S of 4.46 mV/decade and ... 4.11 (a) Plot of drain current ID as a function of gate overdrive (VG –VT) for I-MOS with Si RSD, and Si0.99C0.01 RSD Both devices have a LG of 60 nm and LI of 60 nm with an EOT of 30 Å The elevated ... understanding the basic physics of impact-ionization and band-to-band tunneling is essential to understanding the operation of these novel nanoscale devices 2.2 Physics of Impact-ionization Impact-ionization...
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Modelling and verification of single slope solar still using ANSYS-CFX

Modelling and verification of single slope solar still using ANSYS-CFX

... annually cost of distillate output of Inverted absorber solar still and single slope solar still were 0.95 & 0.54 Rs A.J.N Khalifa[10] studied literature on relation between cover tilt angle and productivity ... the distillate water to an external measuring jar Whole set up of solar still is installed on stand   Figure Experimental set up of solar still Flow geometry ANSYS is engineering simulation software, ... Figure shows dimensional model of solar still based on data available in experimental set up of solar still by ANSYS 10 Figure shows meshing structure of solar still ISSN 2076-2895 (Print), ISSN...
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Modeling and Simulation of Microbial Depolymerization Processes of Xenobiotic Polymers

Modeling and Simulation of Microbial Depolymerization Processes of Xenobiotic Polymers

... 12 Modeling and Simulation of Microbial Depolymerization Processes of Xenobiotic Polymers 12.4.2 Analysis of Enzymatic PLA Depolymerization The experimental and analytical study of endogenous depolymerization ... HPLC profiles of PEG before and after the cultivation of the microbial consortium E-1 [11, 12] 289 290 12 Modeling and Simulation of Microbial Depolymerization Processes of Xenobiotic Polymers Solution ... 12 Modeling and Simulation of Microbial Depolymerization Processes of Xenobiotic Polymers 12 13 14 15 16 17 of xenobiotic polymers with experimental data introduced into analysis Proceedings of...
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Design and Simulation of A CMOS-MEMS Accelerometer

Design and Simulation of A CMOS-MEMS Accelerometer

... estimated value is calculated assuming a total sensing capacitance of 60fF Parasitic capacitance and mismatch of sensing capacitance is measured in a way as shown in Figure 5.4 The capacitance ratios ... first-generation accelerometer were performed on a probe station Table lists major parameters of the device Only the ratio of parasitic capacitance and sensing capacitance can be measured, and the ... Integrate During the Sample phase, Vs+ and Verror are sampled to sampling capacitor Ci1, and Vs- is sampled to Ci2 At the same time, integration capacitors Cf1 and Cf2 are reset to zero charge, and...
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Tài liệu Design And Simulation Of A Cmos-Mems Accelerometer doc

Tài liệu Design And Simulation Of A Cmos-Mems Accelerometer doc

... estimated value is calculated assuming a total sensing capacitance of 60fF Parasitic capacitance and mismatch of sensing capacitance is measured in a way as shown in Figure 5.4 The capacitance ratios ... first-generation accelerometer were performed on a probe station Table lists major parameters of the device Only the ratio of parasitic capacitance and sensing capacitance can be measured, and the ... Integrate During the Sample phase, Vs+ and Verror are sampled to sampling capacitor Ci1, and Vs- is sampled to Ci2 At the same time, integration capacitors Cf1 and Cf2 are reset to zero charge, and...
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