... Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.Nano Lett 2008, 8:3004.2. Plante MC, LaPierre RR: Growth mechanisms of GaAs nanowires by gassource ... Grandidier B, Stiévenard D, Coffinier Y, Boukherroub R,Larde R, Cadel E, Pareige P: Growth of Si nanowires on micropillars forthe study of their dopant distribution by atom probe tomography. J ... the first types of NWs are rarelyhigher than the overgrown Ge layer, while for the secondtype of NWs, the part of the NWs that surpasses theovergrown Ge layer can reach a length of 2 μmwhenthegrowth...