the work presented in this section of chapter 5 has been published chumnarnsilpa et al 2009 the abstract of the publication is enclosed in the appendices
Study of drop on demand inkjet printing technology with application to organic light emitting diodes
... solution-based methods such as spin-coating and inkjet printing To date, the complete list of materials that have been incorporated in OLEDs is too large to provide in this section The following highlights ... temperature by making use of radial basis function network methods Finally, Chapter draws the conclusions by discussing achievements and limitations of the research presented in the thesis Some suggestions ... processes by spin-coating has also been built as comparison with the inkjet printing device In order to obtain an understanding of the formation of different thin film surface morphology, Chapter characterizes...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source
... microwave frequency of 2 450 MHz is 8 75 gauss The magnetic field in the plasma chamber was analysed by using the 2D Poisson software To start the simulations, the initial parameters of the solenoid coils ... components The use of electromagnet has wide flexibility of tuning the plasma to get the best operating conditions The use of electromagnet (instead of permanent magnets) helps one to investigate the ... jacket (electromagnet) for shielding the fringing magnetic field and to reduce the power consumption The use of jacket is to provide a return path for the magnetic field lines and thereby shield the...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
... similar values of η Although the values of VOC are similar, the value of JSC for the film annealed at 350 °C is greater than that for annealing at 450 °C owing to larger surface area of the former ... annealing directly at 450 °C, the ATO film suffered severe cracking that resulted in the film becoming easily peeled from the Ti-foil substrate, as demonstrated in the inset of Figure 1a The inset ... concentration of I2 increases the concentration of triiodide anions so increasing the hole transport mobility, but this effect is balanced in a back-illuminated device by the attenuation of the incident...
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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
... developed the conceptual framework and supervised the work All authors read and approved the final manuscript Competing interests The authors declare that they have no competing interests References ... graphene is the most suitable material for application as a counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance ... range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface As shown in the figure, the resistances...
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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot
... developed the conceptual framework and supervised the work All authors read and approved the final manuscript Competing interests The authors declare that they have no competing interests References ... graphene is the most suitable material for application as a counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance ... range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface As shown in the figure, the resistances...
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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
... tip since the sidewall of the silicon pillar is pared by etchant Finally, the PR is consumed completely after 10min etching time, and a pyramid-like tip is then formed The appearance of the pyramid-like ... protect the underlying silicon (Figure 2a) The etching depth of silicon is increased upon etching time, while the PR is also gradually etched away; the exposed silicon is then increased and etched ... ion etching techniques The apex of the nanotip can reach to nm in radius The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually consumed during the etching...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
... that this thesis is my original work and it has been written by me in its entirety I have duly acknowledged all the sources of information which have been used in the thesis This thesis has also ... cells shall be investigated within this thesis To maintain or even improve the a-Si:H(i)/c-Si interface quality upon the additional deposition of the doped silicon films, the optimisation of the ... potential candidates to meet this need, and are investigated in this thesis To study any degradation of the underlying intrinsic buffer layer after the deposition of the doped silicon films, the...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
... seen from the zoomed -in image of the left side of the gate, the sidewall of TaN gate is normal to the surface of AlGaN barrier layer, indicating the anisotropy of the gate etch process 54 Fig ... the AlGaN barrier layer is assumed to be relaxed, since the thickness of the GaN layer is usually several micrometers, whereas the thickness of the AlGaN barrier layer is in the order of tens of ... with increasing doping level For the lateral AlGaN/GaN HEMTs during the off-state, it is assumed that the electric field in the depletion region under the gate is a combination of a vertical polarization...
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Fabrication and characterization of germanium photodetectors
... cleaved single mode fiber is shown together To obtain the intrinsic characteristics of the Ge JFET, the contribution of source-drain current of the un-illuminated part of the channel in ID calculation ... foundation of next-generation central-processing-unit (CPU) 1.6 Thesis Organization The organization of the thesis is divided in the following chapters In Chapter 2, the recent progresses in the development ... wavelength of 155 0 nm for the first time In addition, the device shows a temporal response time of 110 ps with rise time of 10 ps, indicating that the scalable Ge JFET photodetector is promising candidate...
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Fabrication and characterization of composite membranes for gas separation
... 4.8 The SEM images of the outer skin of the inner layer (PES) of dual-layer hollow fibers spun with an air gap of 1 .5 cm (A: spinneret 25oC, coagulant 25oC; B: spinneret 25oC, coagulant 5oC) ... of the cross -section morphology of dual-layer hollow fibers spun with an air gap of 1.5cm (A: spinneret 25oC, coagulant 25oC; B: spinneret 25oC, coagulant 5oC; C: spinneret 60°C, coagulant 25 C; ... profiles along the radial length within the spinneret; (b) Schematic of the particle distribution in the cross -section of the single layer hollow fiber………………… ….129 Fig 6.2 Particle distribution profiles...
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Fabrication and characterization of luminescent silicon nanocrystal films
... spectra of a µm droplet and the background film In this work, the background film refers to the droplet-free film region The Raman spectrum of the virgin Si(100) target is also shown for reference The ... crystallinity as the target It is also observed that the Raman peak is redshifted for some droplets but identical with that of Si target for other droplets On the other hand, the Raman spectrum of ... while the width of Raman spectrum is correlated with the size distribution of NCs However, a quantitative analysis is difficult since the influence of the amorphous phase and the stresses in the...
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Fabrication and characterization of memory devices based on organic polymer materials
... Figure 3 .5: CyV sweep (from (i) to (iv)) of a thin film of PKEu on a platinum disk electrode in acetonitrile with 0.1 M of n-Bu4NPF6 as the supporting electrolyte The inset is the CyV, sweep in the ... (up to GPa) [59 ] The characteristic switching is associated with the intrinsic negative resistance effect of the organic CT crystals [60] This phenomenon 23 Chapter 1: Introduction is therefore ... components in memory and/or logic circuits in the future C Xanthene Derivatives Xanthene is the basis of a class of dyes, including Rose Bengal (RB), fluorescein, Eosins and rhodamines Among them, RB has...
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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
... surface and all the currents must be carried by these majority spins This kind of materials is called half metals The term of half metal was proposed by de Groot et al on the basis of electronic ... is the possibility of applying it into practical spintronic devices? 16 Chapter Introduction and literature survey 1 .5 Organization of this thesis The outline of the thesis is as following: Chapter ... As the spin-down electrons are in the localized state, the electron transport is dominant by the thermal assisted hopping Fe3O4 (magnetite) belongs to this kind of half metals (4) Both spin-up...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes
... instability, and phase separation occurs spontaneously For a ternary system, the binodal line and the spinodal line meet at the critical point The location of critical point determines whether the polymer-rich ... though the channel inside spinneret However, there has been no report on the effects of conical spinneret on ultra-filtration hollow fiber spinning Since in the channel of conical spinneret, the ... polymer-lean phase The location of the critical point determined whether the polymer-rich phase and the polymer-lean phase forms a new phase At a certain stage during phase demixing, the polymer-rich phase...
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Fabrication and characterization of AIGaN gan HEMTs
... because the metal has been laid to a depth way pass the AlGaN/GaN interface where the 2DEG is located Hence, the region of contact between the metal and the channel is at the sides of the metal (see ... tunneling from the metal to the semiconductor is possible In the absence of a good match between the metal and the semiconductor work functions, which is generally the case, this is the best approach ... 18nm from the surface This depth has been chosen because it is where the n-doped AlGaN layer is In addition, it is closer to the AlGaN/GaN interface, where the 2DEG is located Finally, the etched...
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Fabrication and characterization of lateral spin valves
... injection of spins, the transport of the spin information in non-magnetic metals and the detection of the resulting spin will be investigated using the lateral spin valve structure Various lateral spin ... for an understanding of the lateral spin valve, was presented in this chapter Subsequently, the theory behind how a spin signal is obtained using the non-local and the local spin valve probe configuration ... generally called the vertical spin valve 1.2 What is lateral spin valve? In the lateral spin valve structure, the ferromagnetic structures are laid out laterally instead of being stacked as in the...
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Fabrication and characterization of photonic crystals
... by the diffusive scattering of cracks formed during sample drying, since the size of the optical probe we used was several millimeters in diameter This scattering effect is also expected to increase ... manipulation If the dielectric constants of the materials in the crystals are different enough, and the absorption of light by the material is minimal, then the scattering at the interfaces can ... the crystal, d is the lattice spacing, θ is the angle between the incident ray and the lattice planes, and the integer m is the order of the diffraction If the dielectric contrast between the spheres...
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Fabrication and characterization of planar hall devices
... Organization of Thesis The outline of the thesis is as follows In chapter 1, the background and the objectives of thesis will be stated The summary of theories for various MR effect and Planar Hall Effect ... review of related work is also presented 2.1 Magnetoresistance Effect (MR) Magnetoresistance is the change in electrical resistance of a material due to the presence of a magnetic field [1] Generally ... dimensions is given in Table 3.4 Devices A1 B1 C1 A2 B2 C2 A3 B3 C3 Length (µm) 50 50 50 50 50 50 50 50 50 Length (µm) 5 5 5 5 3 .5 10 15 20 30 40 50 Width (µm) Table 3.4 Dimensions for the planar hall...
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Fabrication and characterization of tunneling field effect transistors (TFETs)
... selfaligned, and this might affect the ease of integrating nanoscale lateral TFETs 11 1.4 Objective of research and outline of the thesis This thesis is aimed at the study of TFET characteristics ... the same amount of lithography misalignment The misalignment of the drain side masking step leads to a part of the drain region being exposed in the device with short LG This is expected to lead ... Vox The potential drop across the gate dielectric of a MOS transistor Lov Tunneling junction to gate edge misalignment of a tunneling FET xiii Chapter Introduction 1.1 MOSFET scaling in the semiconductor...
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