preface amp contents advances in optical and photonic devices
Advances in optical and photonic devices Part 1 pot
... PL spectra in Fig are broadened with increasing optical excitation densities Furthermore, an increase in integrated PL intensity after intermixing 10 Advances in Optical and Photonic Devices occurs ... nonlinear spectroscopy, microscopy, and laser biomedicine 2 Advances in Optical and Photonic Devices The first mid-infrared broadband semiconductor laser was demonstrated in an intersubband ... increase in annealing temperature initiates more intermixing, and therefore improves the uniformity in shape, size and composition of Qdash leading to reduction in PL linewidth The result points...
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Advances in optical and photonic devices Part 2 pot
... x Jth 14 Advances in Optical and Photonic Devices dominant wavelength is shown in longer cavity Qdash lasers of 850 µm and 1000 µm, as depicted in Fig As a result, a quasi-supercontinuum broad ... distribution of noninteracting Qdashes at an intermediate intermixing, are achieved after the intermixing The inset of Fig 13, showing the changes of FWHM of the broadband laser with injection depicts ... island plane at a given bias 24 Advances in Optical and Photonic Devices The photonic (de Broglie) quantum corral effect imposes a λ/2 period transient ordering upon the imminently recombinant...
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Advances in optical and photonic devices Part 3 pptx
... directly and independently controlled by controlling the effective refractive index in these mirror regions Any change 46 Advances in Optical and Photonic Devices in the effective refractive index in ... need to integrate semiconductor lasers with other optical components such as amplifiers, 40 Advances in Optical and Photonic Devices modulators and detectors (Coldren 2000; Ward, Robbins et al ... LED emission 34 Advances in Optical and Photonic Devices in this case That is the reason why we make use of the flower design in enhancing the PQR light output power since the increase of the...
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Advances in optical and photonic devices Part 4 doc
... diode (DFB LDs) 60 Advances in Optical and Photonic Devices Fabrication of the integrated devices The semiconductor active waveguide optical isolators in the integrated devices are based on ... rates Optical injection-locking is proposed as a solution to these problems It enhances the intrinsic component bandwidth and reduces frequency chirp considerably 68 Advances in Optical and Photonic ... solutions and components, to meet the market demand This in- phase, demand and supply, problem and solution and consumer need and innovation cycle, has ushered us in to the present information...
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Advances in optical and photonic devices Part 5 doc
... 72 Advances in Optical and Photonic Devices other researchers on other semiconductor materials such as GaAs, InSb, Si and InP The tunnel junction is formed by joining two highly doped ... localize the current injection without having to etch a mesa 74 Advances in Optical and Photonic Devices The resulting device was therefore coplanar in structure It can be ascertained from Table.1.1 ... much cheaper than InAlGaAs DBRs which allows increasing the performance and decreasing the cost of the component at the same time The biggest 76 Advances in Optical and Photonic Devices advantage...
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Advances in optical and photonic devices Part 6 doc
... and is therefore distinctly multimode Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are not longitudinal, ... negative detuning regime proposes flat, highly damped S21 curves An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase ... 98 Advances in Optical and Photonic Devices References T Baba, Y Yogo, K Suzuki, F Koyama, and K Iga, “Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting...
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Advances in optical and photonic devices Part 10 pptx
... whereas infrared applications include intra-band and inter-sub-band photodetection, and infrared emission Below is presented a brief summary of the main progress on optical and optoelectronic devices ... dF (V ) and G (V ) = + [V − Vdc + RF (V )] G(V) is a nonlinear force and LC L C dV H (V )V is a damping factor 180 Advances in Optical and Photonic Devices The circuit of Fig dc biased in the ... the light confining layers (the lower refractive index regions – upper and lower cladding layers), corresponds to a DBQW-RTD with thick low doped 182 Advances in Optical and Photonic Devices top...
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Advances in optical and photonic devices Part 11 potx
... transmission line and wire bond equivalent inductance, the RTD intrinsic capacitance and the devices equivalent series resistance, respectively 194 Advances in Optical and Photonic Devices rf out ... injected signal frequency becomes out of the oscillator locking range, the circuit generate mixing products of the injected signal and free-running oscillations 198 Advances in Optical and Photonic ... electrical and 196 Advances in Optical and Photonic Devices Fig 22 RTD-LD I relaxation oscillation (a) electrical and (b) photo-detected optical output waveforms at around 600 MHz Fig 23 Electrical and...
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Advances in optical and photonic devices Part 13 ppt
... constructed in the C- and L-band (C-band: 1530– 1565 nm, and L-band: 1565–1625 nm) The widening of an optical amplifier bandwidth has been intensively studied in the conventional photonic bands of ... developing novel photonic devices In this chapter, fabrication techniques and characteristics of novel QD photonic devices such as a broadband QD light 244 Advances in Optical and Photonic Devices ... and an external 236 Advances in Optical and Photonic Devices (b) QD FP laser diode Nomarized emission intensity (a) Ultra Wide Band -O-band O-band InAs Quantum Dot in Well+Sb InGaAs Quantum Dot+Sb...
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Advances in optical and photonic devices Part 14 potx
... avalanche processes in the Si structures, a –self quenching avalanche process, b – self sustaining avalanche breakdown process 254 Advances in Optical and Photonic Devices in conventional avalanche ... the value of intrinsic gain of level 106 or more in semiconductor structures is not trivial task in development of silicon photomultipliers For remaining, the principle of internal gain of multiplication ... material and technologies compatible to the main mass production 258 Advances in Optical and Photonic Devices technology processes as CMOS technology and more important aspect that materials and technology...
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Advances in optical and photonic devices Part 16 doc
... of the incident 1μm pumping power was down converted into signal and idler power ECOPOs have enjoyed something of a revival in recent years due to the 298 Advances in Optical and Photonic Devices ... 304 Advances in Optical and Photonic Devices This relation, then, lets us examine the various parameters we can influence in order to attain parametric threshold for the minimum of circulating ... laser gain medium and nonlinear optical crystals Significant thermal lens effects manifest themselves in poor clamping of the pump field and a non-linear relationship between primary pumping and...
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Advances in optical and photonic devices Part 18 pot
... hops and have low intensity noise However, one problem exists that these lasers need additional cooling below freezing point for reaching the D1 line wavelength of K, 770 nm In 340 Advances in Optical ... about 10,000 times in 346 Advances in Optical and Photonic Devices potassium The light-narrowing factor, which is the ratio of the minimal width for the optimal pumping rate and the maximum width ... neglected, and the absorption coefficient of a specific line, such as D1, becomes a single Lorentzian: α = ncre f γ (ν − ν ) + γ (6) 336 Advances in Optical and Photonic Devices In the center...
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Advances in optical and photonic devices Part 19 pdf
... 350 Advances in Optical and Photonic Devices saving millions of lives Multi-channel MCG provides reach information on electrical activities in the heart non-invasively, and hence this ... recordings of brain function Phys Med Biol Vol 49, pp 2117-2128 Wikswo, J P (2004) SQUIDs Remain Best Tools for Measuring Brain’s Magnetic Field Phys Today Vol 57, pp 15-17 352 Xia, Advances in Optical ... Ultra-Sensitive Optical Atomic Magnetometers and Their Applications 351 Knappe, S.; Schwindt, P D D.; Gerginov, V., Shah, V.; Liew, L.; Moreland, J.; Robinson, H G.; Hollberg, L & Kitching, J (2006)...
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Advances in Optical and Photonic Devices 2011 Part 1 potx
... PL spectra in Fig are broadened with increasing optical excitation densities Furthermore, an increase in integrated PL intensity after intermixing 10 Advances in Optical and Photonic Devices occurs ... nonlinear spectroscopy, microscopy, and laser biomedicine 2 Advances in Optical and Photonic Devices The first mid-infrared broadband semiconductor laser was demonstrated in an intersubband ... increase in annealing temperature initiates more intermixing, and therefore improves the uniformity in shape, size and composition of Qdash leading to reduction in PL linewidth The result points...
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Advances in Optical and Photonic Devices 2011 Part 2 pptx
... effect in the longitudinal direction and band-filling effect, are shown as an important role in broadened lasing spectrum as injection level increases After an intermediate degree of postgrowth interdiffusion ... island plane at a given bias 24 Advances in Optical and Photonic Devices The photonic (de Broglie) quantum corral effect imposes a λ/2 period transient ordering upon the imminently recombinant ... current is measured 0.736 μA/hole by using linear fitting 28 Advances in Optical and Photonic Devices Fig 11 (color online) Angle-resolved spectra of single hole among 1M PQR hole array at 32...
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Advances in Optical and Photonic Devices 2011 Part 4 pptx
... rates Optical injection-locking is proposed as a solution to these problems It enhances the intrinsic component bandwidth and reduces frequency chirp considerably 68 Advances in Optical and Photonic ... solutions and components, to meet the market demand This in- phase, demand and supply, problem and solution and consumer need and innovation cycle, has ushered us in to the present information ... localize the current injection without having to etch a mesa 74 Advances in Optical and Photonic Devices The resulting device was therefore coplanar in structure It can be ascertained from Table.1.1...
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Advances in Optical and Photonic Devices 2011 Part 5 ppt
... and is therefore distinctly multimode Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are not longitudinal, ... negative detuning regime proposes flat, highly damped S21 curves An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase ... 98 Advances in Optical and Photonic Devices References T Baba, Y Yogo, K Suzuki, F Koyama, and K Iga, “Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting...
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Advances in Optical and Photonic Devices 2011 Part 6 docx
... Faraday rotator nor polarizer and, therefore, are suitable for monolithic integration with other optical devices on 122 Advances in Optical and Photonic Devices an InP substrate The theory of the ... significant continuous wave (CW) output power at room temperature in the 2-3 and in the 4-9 µm range, respectively, while maintaining single mode operation and being reproducibly tunable in a manner ... (a-2) forward and (b-2) backward propagating light 128 Advances in Optical and Photonic Devices section (x-y plane) of the device, where Fig 8(a-1) is for forward propagating light and Fig 8(b-1)...
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Advances in Optical and Photonic Devices 2011 Part 7 docx
... pumping at degeneracy 144 Advances in Optical and Photonic Devices Fig Vertical structure of the form birefringent parametric generator: refractive index (thin solid line), TM0 (thick solid line) ... fluorescence tuning curve: experimental data (+) and fitting curve for a GaAs thickness t = 271 nm (solid line) 152 Advances in Optical and Photonic Devices Fig Temperature tuning for λP = 1062 ... obtained with the only input pump (dashed line) 154 Advances in Optical and Photonic Devices At first, only the 100 mW (external power) TM polarized pump beam at λp = 1036 nm was injected in...
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Advances in Optical and Photonic Devices 2011 Part 8 pptx
... whereas infrared applications include intra-band and inter-sub-band photodetection, and infrared emission Below is presented a brief summary of the main progress on optical and optoelectronic devices ... dF (V ) and G (V ) = + [V − Vdc + RF (V )] G(V) is a nonlinear force and LC L C dV H (V )V is a damping factor 180 Advances in Optical and Photonic Devices The circuit of Fig dc biased in the ... thickness of intrinsic layer on n-electrode side and p-electrode side were 168 Advances in Optical and Photonic Devices 0.6μm and 0.3μm, respectively Width of WGPD was tapered from 5μm to 1μm and length...
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