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method for decontamination of surfaces and working areas from organic pollutants

ORGANIC POLLUTANTS TEN YEARS AFTER THE STOCKHOLM CONVENTION – ENVIRONMENTAL AND ANALYTICAL doc

ORGANIC POLLUTANTS TEN YEARS AFTER THE STOCKHOLM CONVENTION – ENVIRONMENTAL AND ANALYTICAL doc

Điện - Điện tử

... Containing Toluene 383 Ruixia Wei and Shuguo Zhao 327 Contents Chapter 17 Vapor Phase Hydrogen Peroxide – Method for Decontamination of Surfaces and Working Areas from Organic Pollutants 399 Petr Kačer, ... Degradation of Chlorinated Organic Pollutants for In Situ Remediation and Evaluation of Natural Attenuation 345 Junko Hara Chapter 15 Electrochemical Incineration of Organic Pollutants for Wastewater ... resolution of substances originated from petroleum contamination and of the substances from the decomposition of organic matter in the sludge The comparison between the values of sum of PAHs and values...
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Báo cáo khoa học: Analysis and biological relevance of advanced glycation end-products of DNA in eukaryotic cells ppt

Báo cáo khoa học: Analysis and biological relevance of advanced glycation end-products of DNA in eukaryotic cells ppt

Báo cáo khoa học

... thorough removal of RNA from the samples and the use of negative ionization for Fig Restriction digests of CEdG-modified and unmodified pGL3 Control vector For the introduction of CEdG adducts, ... peak pair with retention times of 8.3 and 9.5 min, and (b) the presence and (c) the correct proportion of the three major mass transitions of CEdGA,B that were used for MS ⁄ MS detection The main ... enzymatically and subjected to LCMS ⁄ MS Thus, a detection limit of about 0.5 ngÆmL)1 CEdGA,B was achieved Identification of CEdGA,B and assessment of the glycation rate For unequivocal identification of...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 4 ppt

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 4 ppt

Kĩ thuật Viễn thông

... field and droping profiles of n++ pp++ and p++ n+ SDR diodes Fig The schematic diode structure, doping profile and field profile of a Double Drift flat profile diode 118 Advanced Microwave and ... capability of devices Taking Baliga and Johnson’s FOM for Si as unity, the Baliga and Johnson’s FOM for GaAs are 11.0 and 7.1, respectively, while those for WBG semiconductor SiC are 29.0 and 278 and ... structure, doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low-High-Low DDR IMPATT diodes Wide Band Gap Semiconductor...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 5 ppt

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 5 ppt

Kĩ thuật Viễn thông

... separately for in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and ... between 100 and 200 MHz Therefore, RF filters have wide pass-bands and the ratio between the bandwidth of the pass-band and the central frequency of the filter is typically of the order of a few ... bandwidth and the central frequency of the RF band-pass filter, for these standards varies between % for UMTS-TDD and % for WiMAX 2496 – 2690 MHz frequency range The value of the relative bandwidth...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 6 pdf

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 6 pdf

Kĩ thuật Viễn thông

... M and N are the number of points which have been distributed uniformly in x- and  y-direction of S plane The aperture diameter of the parabolic reflector is d The relations x   of (3) and ... operating frequency of the antenna is 1.4 GHz Reflector aperture is 7.0m in height and 13.5m in width with a focal axis of 5.31m The profile of azimuth curve is parabola and the profile of elevation ... range, and generates two channels of 50.304GHz and 52.4GHz when 262MHz reference is used The PLL achieves phase noises of – 89dBc/Hz from 26.2GHz and – 81dBc/Hz from 52.4GHz, at 1MHz offset frequency,...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 7 potx

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 7 potx

Kĩ thuật Viễn thông

... Devices, Circuits and Systems 268 practice, the bandwidth of the matching network cannot be made wide enough to cover the whole left-handed and right-handed pass-band, and the performance of the D-CRLH ... inductance and shunt capacitance cannot be avoided in nature It consists of series resonators LR and CL and shunt resonators CR and LL, where the subscript “L” and “R” denote left-handed and righthanded, ... Out-band phase noise @1MHz offset -89 dBc/Hz from 26.2 GHz -81 dBc/Hz from 52.4 GHz Out-band phase noise @10MHz -109 dBc/Hz from 26.2 GHz offset -102 dBc/Hz from 52.4 GHz RMS Jitter 7.42 (from...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 10 potx

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 10 potx

Kĩ thuật Viễn thông

... three-ordered triple-passband filter The central frequencies of three passbands are set as 2, and GHz The bandwidths of the first, second and third passband are chosen as 200, 300 and 200 MHz, respectively, ... quadruple-passband filter The central frequencies of four passbands are set as 2, 5, and 11.3 GHz The bandwidth of four passbands is all chosen as 180 MHz, which is 9% of the first passband’s central ... degree and bandwidth of a filter, the performance of a filter with resonators can be well indicated by translating the measurement into an unloaded Q of a resonator Design of Multi-Passband Bandpass...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 11 ppt

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 11 ppt

Kĩ thuật Viễn thông

... Circuits and Systems where the Corrective Term can be found either from plots in Figures and or from formulae in Tables and and the value of s is restricted by s < 3, while the value of c is restricted ... where the value of the Corrective Term can be found either from plots in Figures and 10 or from formulae in Tables and and the value of s is restricted by s < 3, while the value of c is restricted ... can be found from formulae in Tables and and values of s1 and s2 are restricted by s1, s2 < 3, while values of c1 and c2 are restricted by c1, c2 < 30 Indexes Advanced Microwave and Millimeter...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 13 pdf

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 13 pdf

Kĩ thuật Viễn thông

... where Svi and Suc are the areas of the vth and uth sample ring of the input and output planes, respectively; Evi is the incident field at the vth sample ring of the input plane, and Euc and Eud ... by using Stratton-Chu formulas instead of Fresnel-Kirchhoff diffraction integral formula are presented; and a new conclusion is drawn 5.1 Reviews of comparisons of Durnin and Sprangle In this ... minimal depth of a ring is x  xmax M Therefore, the depth x of each ring can take only one of the values in the set of x, 2x, , M x Thus, the different combination of the depth x of each ring,...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 14 pptx

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 14 pptx

Kĩ thuật Viễn thông

... optimum form of the companding function in order to simultaneously reduce the PAPR and improve the BER performance Fig 20 presents one of these schemes implementation Fig 20 Companding and Expanding ... Prof Dr hab Adam Krężel (University of Gdańsk), Prof Dr J Pereira Osório (University of Porto), Prof Dr ir Peter Hoogeboom and Prof Dr ir Leo P Ligthart (Delft University of Technology), Prof ... semi-passive (or semi-active) and active ones These names derive from the needing of an internal battery for Tag‘s operation and transmission of signal From these three types of Tags which will be addressed...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 15 potx

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 15 potx

Kĩ thuật Viễn thông

... retrieval method of atmospheric parameters Klein and Swift (1977), for example, proposed an improved model for the dielectric constant developed on the basis of measurements at L-band and S-band Their ... (2.2.10) will be specialized for particular cases of a purely scattering medium and of a solely absorbing and emitting medium and each of them will be described with the help of real satellite images ... Chartreuse green and lime-green are flags for snowfall, dry snow cover and wet snow cover, respectively; red and yellow dots refer to convective and stratiform precipitation; blue and cyan represent...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 16 docx

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 16 docx

Kĩ thuật Viễn thông

... , of time average B eff  Eq.[8] has been widely and firmly tested in single neurons of Helix aspersa for static (del Moral and Azanza 1992) and ELF weak MF (Azanza and del Moral 1998) and for ... target for electromagnetic field interactions The EMF, in the frequency range we are applying, i.e ELF of 0.1-217 Hz, and 100 and 800 Hz modulating MW carrier and, MW of 9.6 and 13.6 GHz, of low ... Professor R Gómez and co of University of Granada for the MW dosimetry simulations We gratefully acknowledge financial support from the Spanish Ministry of Defence under Project ERG 101.103, from...
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Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 17 ppt

Advanced Microwave and Millimeter Wave Technologies Devices, Circuits and Systems Part 17 ppt

Kĩ thuật Viễn thông

... attenuation between 24 dB and 21 dB by the pertinent part of the CD for July 2007, for the attenuation between 21 dB and dB by the pertinent part of the CD for August 2007 and for the attenuation smaller ... which also forms the CD for the worst month in the region from 170 mm/h to mm/h The CD for the worst month for the rain intensities smaller than mm/h forms the pertinent part of the CD for September ... only at the 38 GHz path for the worst month over the one-year period is formed for the attenuation between 34 dB and dB by the pertinent part of the CD for August 2007 and for attenuation smaller...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 1 doc

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 1 doc

Kĩ thuật Viễn thông

... of cumulative charges there was a quite certain sight on a nature of a without the jet collapse of facing of a cumulative liner and formation of a dispersion of cumulative jets In formation of ... process of formation of a jet follows the laws of the stationary expiration In [17] on the basis of the analysis of various experimental data and results of numerical accounts the criterion of formation ... in RADAR, land and satellite based communication and also have wide civilian and defence applications Two typical areas of application of millimeter-wave are information communication and remote...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 2 pot

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 2 pot

Kĩ thuật Viễn thông

... higher VDoff Fig.10 shows (a) electron density profiles and (b) NDD+ profiles in the off state for the two cases The left is for VDoff = 20 V (VG = Vth = – 7.50 V) and the right is for VDoff = 80 ... density profiles and (b) NDD+ profiles in the off state The left is for VDoff = 20 V and the right is for VDoff = 80 V NDD = 2x1017 cm-3, NDA = 1017 cm-3 and EC – EDD = 1.0 eV Effects of Field ... dimensions and position of each of the resonators (position and distance from the transmission line) was optimised in such a way that the sum of each absorption band result in an broad absorption band...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 4 doc

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 4 doc

Kĩ thuật Viễn thông

... field and droping profiles of n++ pp++ and p++ n+ SDR diodes Fig The schematic diode structure, doping profile and field profile of a Double Drift flat profile diode 118 Advanced Microwave and ... capability of devices Taking Baliga and Johnson’s FOM for Si as unity, the Baliga and Johnson’s FOM for GaAs are 11.0 and 7.1, respectively, while those for WBG semiconductor SiC are 29.0 and 278 and ... structure, doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low-High-Low DDR IMPATT diodes Wide Band Gap Semiconductor...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 5 potx

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 5 potx

Kĩ thuật Viễn thông

... separately for in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and ... between 100 and 200 MHz Therefore, RF filters have wide pass-bands and the ratio between the bandwidth of the pass-band and the central frequency of the filter is typically of the order of a few ... bandwidth and the central frequency of the RF band-pass filter, for these standards varies between % for UMTS-TDD and % for WiMAX 2496 – 2690 MHz frequency range The value of the relative bandwidth...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 6 docx

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 6 docx

Kĩ thuật Viễn thông

... M and N are the number of points which have been distributed uniformly in x- and  y-direction of S plane The aperture diameter of the parabolic reflector is d The relations x   of (3) and ... operating frequency of the antenna is 1.4 GHz Reflector aperture is 7.0m in height and 13.5m in width with a focal axis of 5.31m The profile of azimuth curve is parabola and the profile of elevation ... range, and generates two channels of 50.304GHz and 52.4GHz when 262MHz reference is used The PLL achieves phase noises of – 89dBc/Hz from 26.2GHz and – 81dBc/Hz from 52.4GHz, at 1MHz offset frequency,...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 8 ppt

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 8 ppt

Kĩ thuật Viễn thông

... bandwidth for fixed elements), for a fixed set of source and load impedances 306 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems For X-band and above ... Therefore, because of the linear proportionality between incident RF power and temperature, thermo-mechanical failures may be expected for the analysed device working in the OFF-State, and for ... Variation of only 30 to 50% of C2 (L and C1 are fixed) translates into 60 to 100% of the impedance variation (for a fixed frequency) or more than 100% of fractional bandwidth (compared with 10% bandwidth...
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Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 9 potx

Advanced Microwave and Millimeter Wave technologies devices circuits and systems Part 9 potx

Kĩ thuật Viễn thông

... (15) As the fractional bandwidth of the passband is characterized by the dB band-edge frequency of lower and upper bands, a steeper slope and a narrower bandwidth in the passband may be obtained ... architecture of the three-ordered dual-passband filter The central frequencies of two passbands are set at and 5.3 GHz The bandwidths of the first and second passband are chosen as 300 and 200 MHz, ... of gain and i g on input return loss measurements and simulation of the s 4m mm-HPA Pu ulsed and CW cha aracterization of the 8mm-HPAs from two differe wafers (see Ta ent able 1) at 4.5 GHz and...
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