laalo3 srtio3 interface the role of oxygen vacancies and electronic reconstruction

Electronic, magnetic and optical properties of oxide surfaces, heterostructures and interfaces role of defects

Ngày tải lên : 10/09/2015, 09:11

... 1.1.1 Oxygen vacancy-mediated transport in SrTiO3 1.1.2 Origin of the two-dimensional electron gas at the LaAlO3/ SrTiO3 interface – the role of oxygen vacancies and electronic reconstruction ... Chapter Origin of the two-dimensional electron gas at the LaAlO3/ SrTiO3 interface – the role of oxygen vacancies and electronic reconstruction 120 4.1 Amorphous LaAlO3/ SrTiO3 heterostructures ... vacancy-mediated transport in SrTiO3 Since the discovery of the two-dimensional electron gas at the interface between two band insulators SrTiO3 and LaAlO3 in 2004 [17], the role of oxygen vacancies in electrical...

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Design, fabrication, and characterization of a solenoidsystem to generate magnetic ﬁeld for an ECR proton source

Ngày tải lên : 22/12/2013, 08:58

... shielding the fringing magnetic field and to reduce the power consumption The use of jacket is to provide a return path for the magnetic field lines and thereby shield the adjacent components The use of ... jacket, and amp-turns (NI) The optimum values of NI for the side and middle solenoid coils were obtained to be 12950 and 8250 respectively Based on these parameters, the total length of the conductor ... MHz), B is the critical magnetic field (gauss), m is the mass of an electron, and e is the electronic charge The magnetic field corresponding to a microwave frequency of 2450 MHz is 875 gauss The magnetic...

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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Ngày tải lên : 19/03/2014, 16:48

... the ﬁlm becoming easily peeled from the Ti-foil substrate, as demonstrated in the inset of Figure 1a The inset of Figure 1b shows the satisfactory quality of the ATO ﬁlms of large area from the ... anodization period, as Frank and co-workers reported.22 Because of the robust structure of the NT arrays and the loose structure of the surface debris, the unwanted deposits on the ATO surface Anodic ... where the IPCEref(λ) of the Si photodiode is known from a calibration, and the current densities of the reference cell and the NT-DSSC device, Jref(λ) and JDSSC(λ), were measured under the same...

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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Ngày tải lên : 20/06/2014, 23:20

... materials with the objective of evaluating the electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells Figure shows the Bode phase plots of the DSSCs with ... on the FTO substrates Deposited graphenes (a) were identified by their different contrasts, and they showed the presence of graphene wrinkles formed during the EPD deposition In the case of the ... semicircles: the first circle in the high-frequency range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface...

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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Ngày tải lên : 21/06/2014, 17:20

... materials with the objective of evaluating the electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells Figure shows the Bode phase plots of the DSSCs with ... on the FTO substrates Deposited graphenes (a) were identified by their different contrasts, and they showed the presence of graphene wrinkles formed during the EPD deposition In the case of the ... semicircles: the first circle in the high-frequency range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface...

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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Ngày tải lên : 21/06/2014, 17:20

... contamination On the other hand, the current of the oxide-capped nanotip retains a sharp curve Furthermore, the turn-on field of the oxide-capped sample is slightly improved compared with the uncapped ... images, it can be clearly seen that the size of PR is reducing upon the etching time Silicon beneath the PR is then exposed and etched away Therefore, the shape of the silicon underneath is gradually ... spin-coated onto the surface To match the height of the nanotip, we tuned the rotation rate of the spin coating to decrease the PR thickness After PR coating, the samples were immersed into the PR stripper...

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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Ngày tải lên : 09/09/2015, 11:15

... properties of the c-Si wafer and of the a-Si and µc-Si thin-film layers, based on [127] as well as on the fitting of the lifetime samples of Figure 4.4 The activation energy (i.e position of the Fermi ... On the other hand, the a-Si:H(i/n) stack at the rear does not obstruct electron transport due to the comparatively small conduction band offset In addition, the presence of a large valence band ... 4.1 The measured diffusion profiles of Figure 4.3 as well as the measured interface charge and interface defect distribution of Figure 4.6 serve as input parameters for the lifetime simulation The...

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Large area plasmonic nanostructures design, fabrication and characterization by laser

Ngày tải lên : 09/09/2015, 11:17

... formed by the thermal annealing of Ag/Au thin films of thickness of nm and nm The scale bar is 100 nm Size distribution of Ag/Au nanodots is shown in the inset in the bottom-left of the figure ... generate the large local field enhancement and modify the spectral shape Good control of the interparticle distance, the geometry of nanoparticle dimer and the breaking of the symmetric geometry of ... Another report presents the result of the synthesis of gold-silica core shell particles demonstrating that the optical properties of core-shell can be adjusted by tuning the thickness of the...

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2D and 3d terahertz metamaterials design, fabrication and characterization

Ngày tải lên : 10/09/2015, 08:40

... pieces of MLA were used in the laser MLA lithography One is with the period of 75 μm and the other with the period of 100 μm The radius of curvature (ROC) of the MLA depends on the period The larger ... where a is the outer dimension of the SRR unit cell, p the period of the SRRs metamaterials, w the line width of the SRR structure, and t the thickness of the SRR It should be noticed that the resonance ... with the period of 75 μm and 100 μm can fabricate the metamaterials with the feature size of 400 nm and 1.8 μm, respectively The difference of these two pieces of MLA is the line width of the...

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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Ngày tải lên : 10/09/2015, 09:11

... circuit of the metal-oxide-semiconductor structure, showing the oxide capacitance Cox, the capacitance of the depletion region Cd, the capacitance Cit and resistance Rit of the interface states, and ... function of Al content x of the AlxGa1 xN barrier layer [10] conduction band edge energy, and EC is the conduction band offset at the AlxGa1-xN/GaN interface Fig 1.4 plots the calculated ns of pseudomorphic ... (1.3) where a is the lattice constant of the AlxGa1 xN barrier layer, a0 is the equilibrium value of the lattice constant of GaN, C13 and C33 are the elastic constants, and e31 and e33 are piezoelectric...

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Fabrication and characterization of germanium photodetectors

Ngày tải lên : 10/09/2015, 15:47

... the intrinsic characteristics of the Ge JFET, the contribution of source-drain current of the un-illuminated part of the channel in ID calculation is eliminated 92 Fig 6.3: TEM image of the ... inherent drawback due to the bandwidth-efficiency tradeoff This tradeoff results from the opposite requirement of the thickness of the photoabsorption layer for high bandwidth and high efficiency ... diameter of 10 μm and the series resistance of 25 Ω, the theoretical bandwidth of 54.3 GHz corresponds well with the experiment It should be noted that the reported improved 3dB frequency of 49...

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Fabrication and characterization of composite membranes for gas separation

Ngày tải lên : 12/09/2015, 11:24

... properties of the gas, then the gas “comes to evaporate” and reappears on the other side of the membrane He made the first effort at separate oxygen from air with a membrane and obtained an oxygen ... Wroblewski, as the flux, J multiplied by the ratio of L/∆p, in which L is the thickness of the membrane and ∆p is the difference between the upstream and the downstream pressures In his study, the P was ... 6.1 (a) Schematic of the axial velocity and shear rate profiles along the radial length within the spinneret; (b) Schematic of the particle distribution in the cross-section of the single layer...

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Fabrication and characterization of luminescent silicon nanocrystal films

Ngày tải lên : 12/09/2015, 11:25

... interests to the microelectronics, optoelectronics, and biomedicine In the size regime of nanometers, the structure and properties of Si NCs differ dramatically from those of the bulk The area of Si ... explain the correlation between the PL and the size of Si NCs observed in some experiments [14] The smaller the NC size, the higher the efficiency of the carrier transfers from the NC core to the ... annealing and thermal oxidation at high temperatures, Si NCs were formed in the SiOx matrix The correlation between of the Si NC formation and the PL properties were studied The origins of the PL bands...

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Fabrication and characterization of memory devices based on organic polymer materials

Ngày tải lên : 12/09/2015, 11:29

... sense the charge spike and set the memory If the electric field is removed from the crystal, the central atom stays in position, preserving the state of the memory (Fig 1.5) [9] Therefore, the ... Results of the present study may enhance our understanding of the application of organic and polymer materials to the organic memory device and it may also contribute to further investigations on the ... Chapter 1: Introduction The easiest and more compact solution is the integration of one diode in series with the cell, at least for the resistive type of memories, and the use of intermediate voltages...

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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Ngày tải lên : 12/09/2015, 11:29

... crucial role in determining the MR ratio [8] Interfacial scattering is dependent on the bandstructure of FM and NM metals at the Fermi level If the bandstructure between FM and NM matches one of the ... focused on the fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx The former is a kind of half metal, while the latter is a type of DMS Both of them have the potential ... Ni and their alloys, the imbalance appears Although the density of states of the spin-up and spin-down electrons are often identical, the states are shifted in energy with respected to each other...

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Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Ngày tải lên : 12/09/2015, 11:29

... flowing will influence the chain packing of macromolecules further and subsequently the morphology of membranes Therefore, the study and design of conical spinneret are needed since the hollow fibers ... rejection of Cl– can even be negative [Tsuru et al., 1991] Afronso and Pinho [2000] reported the transport flux of MgSO4, MgCl2 and Na2SO4 across the NF membrane, the effect of the anion valence and the ... Nakao and Kimura [1982] proposed the steric-hindrance pore model while studying the discrepancy of the kinetic item of σ between the fiction model and the pore model Through modification of the...

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Fabrication and characterization of AIGaN gan HEMTs

Ngày tải lên : 05/10/2015, 22:32

... of the AlGaN/GaN HEMT It has also spelt out the importance of the current project and the objective we hope to achieve at the end In Chapter 2, the fundamentals of the GaN related materials and ... – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, respectively 22 Since the electrostatic potential, ... pattern The accuracy of the specific contact resistivity ρc measured by TLM depends on the accuracy of the electrical and dimensional measurements of the TLM device and on the validity of assumptions...

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Fabrication and characterization of lateral spin valves

Ngày tải lên : 05/10/2015, 22:32

... fabricated and the dimensions of the electrodes The inset shows the overview of the devices and the number of probe terminals available for each geometry 48 Figure 4.2 Schematic diagram showing the ... corresponds to the switching field of the wider electrode and H2 corresponds to the switching field of the narrower electrode The magnetization states of the electrodes corresponding to the respective ... When the electrons carrying the spin current crosses the FM/NM interface into the NM metal, the electrons accumulate over a distance λN and λF at both sides of the FM/NM interface because the...

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Fabrication and characterization of photonic crystals

Ngày tải lên : 05/10/2015, 22:32

... Here, λ is the wavelength of the incident light on the crystal, d is the lattice spacing, θ is the angle between the incident ray and the lattice planes, and the integer m is the order of the diffraction ... spheres The allowed modes form the photonic band structure of this crystal There is a narrow band gap at a frequency of ν = 2.8c / πA , where c is the speed of light and A the size of the cubic ... ratio of the refractive index of the spheres and their background) is increased the band gap widens Below a contrast of 2.85 the gap is closed.11 The band gap in Figure 1.2 is located between the...

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Fabrication and characterization of planar hall devices

Ngày tải lên : 05/10/2015, 22:32

... Organization of Thesis The outline of the thesis is as follows In chapter 1, the background and the objectives of thesis will be stated The summary of theories for various MR effect and Planar ... introduced the theoretical description of the MR and PHE effects Here, we will introduce the experimental techniques involved in the fabrication of MR and PHE devices The steps and flow chart for the ... dominates The shape and detailed features of the M – H loops is strongly dependent on the Cu spacer layer thickness In another experiment, the role of finite size on the magnetic properties of multilayer...

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