UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 TO-92 1:EMITTER 2:COLLECTOR BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic IB Tj TSTG 60 50 400 150 50 125 -55 ~ +150 V V V mW mA mA °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) Parameter Symbol Test conditions Collector cut-off current Emitter cut-off current DC current gain(note) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF VCB=60V,IE=0 VEB=5V,Ic=0 VCE=6V,Ic=2mA VCE=6V,Ic=150mA Ic=100mA,IB=10mA Ic=100mA,IB=10mA VCE=10V,Ic=50mA VCB=10V,IE=0,f=1MHz Ic=-0.1mA,VCE=6V RG=10kΩ,f=100Hz Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure UTC MIN TYP MAX UNIT 100 100 700 nA nA 0.1 0.25 1.0 2.0 1.0 3.0 1.0 V V MHz pF dB 70 25 80 UNISONIC TECHNOLOGIES CO LTD QW-R201-006,A UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 G 200-400 L 350-700 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Fig.2 DC current Gain IB=300 µA 60 IB=250 µA IB=200 µA 40 IB=150 µA IB=100 µA 20 IB=50 µA 12 16 10 10 10 20 Ic,Collector current (mA) HFE, DC current Gain -1 10 10 10 10 10 -1 10 10 0.2 0.4 0.6 0.8 Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance 10 Current Gain-bandwidth product,fT(MHz) 10 VBE(sat) 10 VCE(sat) 10 10 10 Ic,Collector current (mA) UTC 10 VCE=6V 10 10 10 1.0 10 Ic=10*IB -1 10 VCE=6V Ic,Collector current (mA) 10 10 10 Collector-Emitter voltage ( V) Cob,Capacitance (pF) Ic,Collector current (mA) 10 VCE=6V 80 Saturation voltage (mV) Fig.3 Base-Emitter on Voltage 10 100 f=1MHz IE=0 10 10 -1 10 -1 10 10 10 Ic,Collector current (mA) 10 10 10 10 10 Collector-Base voltage (V) UNISONIC TECHNOLOGIES CO LTD QW-R201-006,A This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components