Philips Semiconductors Product specification Triacs BT138 series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance Typical applications include motor control, industrial and domestic lighting, heating and static switching PINNING - TO220AB PIN DESCRIPTION main terminal main terminal gate QUICK REFERENCE DATA SYMBOL PARAMETER MAX MAX MAX UNIT VDRM BT138BT138BT138Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current 500 500F 500G 500 600 600F 600G 600 800 800F 800G 800 V 12 95 12 95 12 95 A A IT(RMS) ITSM PIN CONFIGURATION SYMBOL tab T2 tab T1 G 23 main terminal LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN - full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX -500 5001 -600 6001 UNIT -800 800 V - 12 A - 95 105 45 A A A2s -40 - 50 50 50 10 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state The rate of rise of current should not exceed 15 A/µs September 1997 Rev 1.200 Philips Semiconductors Product specification Triacs BT138 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN TYP MAX UNIT - 60 1.5 2.0 - K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER IGT Gate trigger current IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current CONDITIONS MIN BT138VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C TYP MAX UNIT F .G - 10 22 35 35 35 70 25 25 25 70 50 50 50 100 mA mA mA mA - 20 10 40 60 40 60 30 40 60 40 60 30 60 90 60 90 60 mA mA mA mA mA 0.25 1.4 0.7 0.4 1.65 1.5 - V V V - 0.1 0.5 mA MIN TYP MAX UNIT DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage dVcom/dt Critical rate of change of commutating voltage tgt Gate controlled turn-on time September 1997 CONDITIONS BT138VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 12 A; dIcom/dt = 5.4 A/ms; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = A/µs 100 .F 50 .G 200 250 - V/µs - - 10 20 - V/µs - - - - µs Rev 1.200 Philips Semiconductors Product specification Triacs 20 BT138 series BT138 Ptot / W Tmb(max) / C 95 15 IT(RMS) / A BT138 = 180 15 99 C 120 102.5 90 10 60 10 110 30 117.5 0 125 15 10 -50 50 Tmb / C IT(RMS) / A Fig.1 Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle 1000 150 Fig.4 Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb BT138 ITSM / A 100 25 BT138 IT(RMS) / A 20 15 100 dI T /dt limit 10 I TSM IT T2- G+ quadrant T time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0.01 100ms Fig.2 Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, ≤ 20ms 100 ITSM / A 80 1.6 ITSM T 10 Fig.5 Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C BT138 IT 0.1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 60 40 0.8 20 0.6 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3 Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz September 1997 50 Tj / C 100 150 Fig.6 Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj Rev 1.200 Philips Semiconductors Product specification Triacs BT138 series IGT(Tj) IGT(25 C) Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 BT138 IT / A 40 BT138 30 typ max Vo = 1.175 V Rs = 0.0316 Ohms 20 1.5 10 0.5 -50 50 Tj / C 100 150 Fig.7 Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj IL(Tj) IL(25 C) 0.5 1.5 VT / V 2.5 Fig.10 Typical and maximum on-state characteristic 10 TRIAC 2.5 BT138 Zth j-mb (K/W) unidirectional bidirectional 0.1 1.5 P D 0.01 0.5 t -50 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms / s 0.1s 1s 10s Fig.11 Transient thermal impedance Zth j-mb, versus pulse width Fig.8 Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj 0.1ms 1000 TRIAC dV/dt (V/us) off-state dV/dt limit BT138 G SERIES 2.5 BT138 SERIES 100 BT138 F SERIES 1.5 dIcom/dt = 15 A/ms 10 12 9.1 5.4 4.2 0.5 -50 50 Tj / C 100 150 50 100 150 Tj / C Fig.12 Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt Fig.9 Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj September 1997 Rev 1.200 Philips Semiconductors Product specification Triacs BT138 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: g 10,3 max 1,3 3,7 2,8 5,9 15,8 max 3,0 max not tinned 3,0 13,5 1,3 max (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13 TO220AB; pin connected to mounting base Notes Refer to mounting instructions for TO220 envelopes Epoxy meets UL94 V0 at 1/8" September 1997 Rev 1.200 Philips Semiconductors Product specification Triacs BT138 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data; supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134) Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given, it is advisory and does not form part of the specification  Philips Electronics N.V 1997 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale September 1997 Rev 1.200 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components