Victor E Borisenko and Stefano Ossicini What is What in the Nanoworld A Handbook on Nanoscience and Nanotechnology Second, Completely Revised and Enlarged Edition Victor E Borisenko Stefano Ossicini What is What in the Nanoworld Related Titles Vedmedenko, E Competing Interactions and Patterns in Nanoworld 2007 ISBN: 978-3-527-40484-1 Wolf, E L Nanophysics and Nanotechnology An Introduction to Modern Concepts in Nanoscience 2006 ISBN: 978-3-527-40651-7 Poole, C P., Owens, F J Introduction to Nanotechnology 2003 ISBN: 978-0-471-07935-4 Balzani, V., Credi, A., Venturi, M Molecular Devices and Machines A Journey into the Nanoworld 2003 ISBN: 978-3-527-30506-3 Victor E Borisenko and Stefano Ossicini What is What in the Nanoworld A Handbook on Nanoscience and Nanotechnology Second, Completely Revised and Enlarged Edition The Authors Victor E Borisenko University of Informatics and Radioelectronics Minsk, Belarus Stefano Ossicini University of Modena and Reggio Emilia Faculty of Engineering Reggio Emilia, Italy Cover Silver tip for scanning near-field optical microscopy, sharpened by focused ion beam milling (SEM image) Experiment: Gian Carlo Gazzadi, S3 Center (INFM-CNR), Modena and Pietro Gucciardi, CNR-IPCF, Messina Artwork: Lucia Covi From ‘‘Blow-up Images from the nanoworld’’ (www.s3.infm.it/blowup); Copyright S3, 2007 All books published by Wiley-VCH are carefully produced Nevertheless, authors, editors, and publisher not warrant the information contained in these books, including this book, to be free of errors Readers are advised to keep in mind that statements, data, illustrations, procedural details or other items may inadvertently be inaccurate Library of Congress Card No.: applied for British Library Cataloguing-in-Publication Data A catalogue record for this book is available from the British Library Bibliographic information published by the Deutsche Nationalbibliothek The Deutsche Nationalbibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data are available in the Internet at  2008 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim All rights reserved (including those of translation into other languages) No part of this book may be reproduced in any form – by photoprinting, microfilm, or any other means – nor transmitted or translated into a machine language without written permission from the publishers Registered names, trademarks, etc used in this book, even when not specifically marked as such, are not to be considered unprotected by law Typesetting Laserwords Private Ltd, Chennai, India Printing Strauss GmbH, Mă rlenbach o Binding Litges & Dopf GmbH, Heppenheim Printed in the Federal Republic of Germany Printed on acid-free paper ISBN: 978-3-527-40783-5 Contents Preface to the Second Edition VII Preface to the First Edition IX Source of Information XI A From Abbe’s principle to Azbel’–Kaner cyclotron resonance B From B92 protocol to Burstein–Moss shift 27 C From cage compound to cyclotron resonance 53 D From D’Alembert equation to Dzyaloshinskii–Moriya interaction 81 E From (e,2e) reaction to Eyring equation 109 F From Fabry–P´ rot resonator to FWHM e (full width at half maximum) 133 G From gain-guided lasers to gyromagnetic frequency 159 H From habit plane to hyperelastic scattering 175 199 I From ideality factor to isotropy (of matter) J From Jahn–Teller effect to Joule’s law of electric heating K From Kane model to Kuhn–Thomas–Reiche sum rule 207 211 L From lab-on-a-chip to Lyman series 225 M From Mach–Zender interferometer to Murrell–Mottram potential 251 N From NAA (neutron activation analysis) to Nyquist–Shannon sampling theorem 285 O From octet rule to oxide 299 P From PALM (photoactivable localization microscopy) to pyrrole 307 V Contents Q From Q-control to qubit 341 R From Rabi flopping to Rydberg gas 363 S From Saha equation to synergetics 381 T From Talbot’s law to type II superconductors 443 U From ultraviolet photoelectron spectroscopy (UPS) to Urbach rule 461 V From vacancy to von Neumann machine 465 W From Waidner–Burgess standard to Wyckoff notation 473 X From XMCD (X-ray magnetic circular dichroism) to XRD (X-ray diffraction) 483 Y From Yasukawa potential to Yukawa potential 487 Z From Zeeman effect to Zundel ion 489 A list and a presentation of Scientific Journals which contain the stem Nano in their title 493 Abbreviations for the scientific journals which appear as sources in the text 507 Appendix – main properties of intrinsic (or lightly doped) semiconductors 513 VI Preface to the Second Edition This is the second, enlarged and updated edition of our book From more than 1400 entries in the first edition we have now reached about 2000 entries Moreover a large number of the old entries have been extended The gallery of illustrations is enriched by new figures, and new tables are added throughout the book The presented terms, phenomena, regulations, experimental and theoretical tools are very easy to consult since they are arranged in alphabetical order, with a chapter for each letter The great majority of the terms have additional information in the form of notes such as ‘‘First described in: ’’, ‘‘Recognition: ’’, ‘‘More details in: ’’, thus giving a historical retrospective of the subject with references to further sources of extended information, which can be articles, books, review articles, or web sites In particular, in this second edition we have tried, for the overwhelming majority of the items, to find out who was the initiator and when and where the term was born, defined or first discussed We think that all these additional notes are quite useful, since they give the possibility to all the readers to start independently their personal research Only four years separate this second edition from the first; nevertheless we have seen a true explosion of research in nanoscience and developments in nanotechnologies One measure of the emergence of these fields is the growth of the literature dedicated to the new disciplines Nanoscience and nanotechnology have, in the last years, witnessed not only an explosive growth in the number of relevant and important ‘‘classical’’ scientific journals, which have devoted, more and more, an increasing proportion of their published papers to ‘‘nano’’-related research, but also in the number of new journals which contain the stem ‘‘nano’’ in their title A list of 62 ‘‘nano’’ journals has been added to the Appendix of the book Only a few of them appeared before 2000 and most of them started their activity in the last four years In reviewing the first edition of this book Professor Vincenzo Balzani correctly pointed out that ‘‘the actual Nanoworld is very large and comprises at least four regions that can be labelled Physics, Chemistry, Biology and Engineering The four component regions of the nanoscience and nanotechnology realm partly overlap but often ignore one another Even worse, in the overlapping territories they not speak the same language to such an extent that, in some cases, they seem even to obey different laws Clearly, VII Abbreviations for the scientific journals which appear as sources in the text C R : Comptes Rendus Contemp Phys : Contemporary Physics Cur Opin Colloid Interf Sci : Current Opinion in Colloid & Interface Science Curr Opin Struct Biol : Current Opinion in Structural Biology Disc Faraday Soc : Discussion of the Faraday Society Dokl Akad Nauk SSSR : Doklady Akademii Nauk SSSR Electron Lett : Electronic Letters Electr World : Electrical World Europhys Lett : Europhysics Letters Fund Math : Fundamentals of Mathematics Fiz Tekh Poluprovodn : Fizika i Tekhnika Poluprovodnikov Fiz Teverd Tela : Fizika Tverdogo Tela Gă tt Nachr Math Phys Klass : Nachrichten von der Akademie der Wissenschaften o zu Gă ttingen-Mathematisch-Physikalische Klasse o Helv Phys Acta : Helvetica Physica Acta IBM J Res Dev : IBM Journal of Research and Development IEEE: Institute of Electrical and Electronics Engineers IEEE Acoustic, Speech, Sign Process Mag : IEEE Acoustic, Speech, and Signal Processing Magazine IEEE Int Conf Comp Syst Signal Proc : IEEE International Conference Composition System Signal Proceedings IEEE J Quantum Electron : IEEE Journal on Quantum Electronics IEEE Trans Electron Dev : IEEE Transactions on Electronic Devices IEEE Trans Inform Theor : IEEE Transactions on Information Theory IEEE Trans Appl Superconductivity : IEEE Transactions on Applied Superconductivity Ind J Phys : Indian Journal of Physics Int J Theor Phys : International Journal of Theoretical Physics J Am Chem Soc : Journal of the American Chemical Society J Am Stat Ass : Journal of the American Statistical Association J Appl Phys : Journal of Applied Physics J Chem Phys : Journal of Chemical Physics J Colloid Interface Sci : Journal of Colloid & Interface Science J Compt : Journal of Computer J Cryst Growth : Journal of Crystal Growth J Ecole Polytechn : Journal de l’Ecole Polytechnique J Electrochem Soc : Journal of the Electrochemical Society J Frank Inst : Journal of the Franklin Institute J Low Temp Phys : Journal of Low Temperature Physics J Magn Magn Mat : Journal of Magnetism and Magnetic Materials J Mat Res : Journal of Material Research J Math Phys : Journal of Mathematical Physics J Microsc : Journal of Microscopy J Opt Soc Am : Journal of the Optical Society of America 508 Abbreviations for the scientific journals which appear as sources in the text J Photochem Photobiol : Journal of Photochemistry and Photobiology J Phys : Journal of Physics J Phys Chem Sol : Journal of Physics and Chemistry of Solids J Phys Condens Matter : Journal of Physics; Condensed Matter J Phys Soc Jpn : Journal of the Physical Society of Japan J Sci Inst Elect Engrs : Journal of Scientific Institute of Electrical Engineers JSME Int J : Japan Society Mechanical Engineering International Journal J Stat Phys : Journal of Statistical Physics J Vac Sci Tech : Journal of Vacuum Science and Technology Jpn J Appl Phys : Japanese Journal of Applied Physics Kgl Danske Videnskab Selskab – Mat.-fys Medd : Kongelige Danske Videnskabernes Selskab – Matematisk-Fysiske Meddelelser Kolloid Z : Kolloid-Zeitschrift Math Syst Theory : Mathematical Systems Theory Mat Sci Techn : Materials Science and Technology Math Annal : Mathematische Annalen Methods Enzymol : Methods in Enzymology Mol Phys : Molecular Physics Monatsh Chem : Monatshefte fă r Chemie u Nano Lett : Nano Letters Nanomedicine: Nanotech Biol Med : Nanomedicine: Nanotechnology, Biology, and Medicine Naturwiss : Naturwissenschaften Opt Lett : Optics Letters Phil Mag : Philosophical Magazine Phil Trans R Soc London : Philosophical Transactions of the Royal Society of London Philips Res Rep : Philips Research Reports Photogr J : Photographic Journal Phys A : Physica A Phys Lett : Physics Letters Phys Rev : Physical Review Phys Rev A : Physical Review A Phys Rev B : Physical Review B Phys Rev Lett : Physical Review Letters Phys Today : Physics Today Phys Z : Physikalische Zeitschrift PNAS : Proceedings of the National Academy of Sciences Proc Am Acad Arts Sci : Proceedings of the American Academy of Arts and Sciences Proc Inst Radio Eng : Proceedings of the Institute of Radio Engineers Proc K Ned Akad Wet : Verhandelingen der Koninklijke Nederlandse Akademie van Vetenschappen Proc Phys Soc : Proceedings of the Physical Society 509 Abbreviations for the scientific journals which appear as sources in the text Proc R Acad Sci : Proceedings of the Royal Academy of Science Proc R Soc Lond : Proceedings of the Royal Society of London Proc Camb Phil Soc : Proceedings of the Cambridge Philosophical Society Prog Phot Res Appl : Progress in Photovoltaics: Research and Applications Proc Phys Math Soc Jpn : Proceedings of the Physico-Mathematical Society of Japan Prog Theor Phys : Progress on Theoretical Physics Pure Appl Math : Pure and Applied Mathematics Rend Accad Naz Lincei : Rendiconti dell’Accademia Nazionale dei Lincei Rep Prog Phys : Reports on Progress in Physics Rev Mod Phys : Review of Modern Physics Rev Sci Instrum : Review of Scientific Instruments Schultzes Arch Mikr Anat : Schultzes Archiv fă r Mikroskopische Anatomie u Semicond Sci Technol : Semiconductor Science and Technology SIAM J Comp : Society for Industrial and Applied Mathematics Journal on Computing SIGACT News : Association for Computing Machinery – Special Interest Group on Algorithm and Computational Theory News Sitzungsber Akad Wiss Wien, Math Naturw Kl : Sitzungsberichte der Akademie der Wissenschaften in Wien, Mathematisch-Naturwissenschaftliche Klasse Sitzungsber Bay Akad Wiss : Sitzungsberichte der Bayerischen Akademie der Wissenschaften Sitzungsber Preuss Akad Wiss : Sitzungsberichte der Preussischen Akademie der Wissenschaften Skr Norsk Vid Akademi, Oslo, Mat Nat Kl : Tidskrifte Norske VidenskapsAkademi i Olso, Matematisk-Naturvitenskapelige Klasse Solid State Commun : Solid State Communications Sov J Nucl Phys : Soviet Journal of Nuclear Physics Sov Phys JETP : Soviet Physics – Journal of Experimental and Theoretical Physics Sov Phys Semicond : Soviet Physics – Semiconductors Surf Sci : Surface Science Surf Sci Rep : Surface Science Reports Symp Quant Biol : Quantum Biology Symposium Theory Prob Appl : Theory of Probability and its Applications Trans AIEE : Transactions of the American Institute of Electrical Engineers Trans Conn Acad : Transactions of the Connecticut Academy of Arts and Sciences Trans Faraday Soc : Transactions of the Faraday Society Trans Opt Soc : Transactions of the Optical Society Trans R Irish Acad : Transactions of the Royal Irish Academy Usp Fiz Nauk : Uspekhi Fiziceskih Nauk Verh Deutsch Phys Ges : Verhandlungen der Deutschen Physikalischen Gesellschaft Z Instrumkde : Zeitschrift fă r Instrumentenkunde u Z Kristallogr : Zeitschrift fă r Kristallographie u Z Krist Miner : Zeitschrift fă r Kristallographie und Mineralogie u 510 Abbreviations for the scientific journals which appear as sources in the text Z Naturforsch : Zeitschrift fă r Naturforschung u Z Phys : Zeitschrift fă r Physik u Z Phys Chem : Zeitschrift fă r Physikalische Chemie u Zh Exp Theor Fiz : Zhurnal Experimentalnoy i Theoreticheskoy Fiziki Zh Russkogo Fiz.-Khim Obsch : Zhurnal Russkogo Fiziko-Khimicheskogo Obschestva 511 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table Group IV semiconductors Material C Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) Si Ge α Sn cubic – diamond 0.35668 i 5.48 5.47 5.7 0.2 0.25 1800 1200 0.54311 i 1.166 1.11 3.44 11.7 0.980.19 0.52 1500 450 0.56579 i 0.74 0.67 4.00 16.3 1.580.08 0.3 3900 1900 0.64892 i 0.09 24 0.023 0.20 1400 1200 513 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table Semiconducting SiC Compound Crystalline structure Lattice parameters at 300 K (a or a,c), nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) α−SiC β−SiC 6H (hexagonal) 3C (cubic) 0.30806 1.51173 i 0.43596 i 2.86 2.65 9.66⊥c , 10.03 c 0.25⊥c , 1.5||c 1.0 260 50 2.2 2.66 9.72 0.647 0.24 900 Table Semiconducting AIII BV nitrides Compound Crystalline structure Lattice parameters at 300 K (a,c), nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 514 AlN GaN InN hexagonal – wurtzite 0.3111 0.4978 d 6.2 2.15 8.5 0.48 0.471 135 14 0.3189 0.5185 d 3.50 3.44 2.4 8.9 0.2 0.259 1000 30 0.3544 0.5718 d 1.89 2.56 15.3 0.11 3200 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table Semiconducting AIII BV phosphides Compound AlP Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) GaP InP cubic – zinc blende 0.54635 i 2.51 2.45 9.8 0.166 0.20 80 0.5450 i 2.4 2.25 3.37 11.1 0.82 0.60 110 75 0.58687 d 1.42 1.35 3.37 12.1 0.077 0.64 4600 150 Table Semiconducting AIII BV arsenides Compound AlAs Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) GaAs InAs cubic – zinc blende 0.5660 i 2.229 2.153 10.1 0.1 0.15 294 0.5653 d 1.519 1.424 3.4 12.5 0.07 0.5 8500 400 0.6058 d 0.43 0.36 3.42 12.5 0.028 0.33 33000 460 515 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table Semiconducting AIII BV antimonides Compound AlSb Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) GaSb InSb cubic – zinc blende 0.61355 i 1.686 1.61 14.4 0.12 0.98 200 420 0.6095 d 0.81 0.69 3.9 15 0.045 0.39 5000 850 0.64787 d 0.235 0.17 3.75 18 0.0133 0.18 80 000 1250 Table Semiconducting AI BVII chlorides Compound Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 516 γCuCl AgCl cubic – zinc blende cubic – NaCl 0.54057 d 3.95 2.1 7.9 0.43 4.2 0.55023 i 3.25 2.1 11.1 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table Semiconducting AI BVII bromides Compound Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) γ CuBr AgBr cubic – zinc blende cubic – NaCl 0.56905 d 3.07 8.0 0.21 23.2 0.57748 i 2.68 11.8 0.22 0.52 60 Table Semiconducting AI BVII iodides γCuI β−AgI cubic – zinc blende hexagonal-wurtzite Lattice parameters at 300 K (a or a,c), nm 0.60427 Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) d 3.12 0.4592 0.7512 d 3.02 Compound Crystalline structure 6.5 0.3 1.4 7.0 517 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table 10 Semiconducting AII BVI sulfides Compound ZnS Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) CdS HgS cubic – zinc blende 0.541 d 3.84 3.68 2.37 8.9 0.40 165 0.582 d 2.58 2.50 2.5 0.58517 −0.2 0.2 340 50 Table 11 Semiconducting AII BVI selenides Compound Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 518 ZnSe CdSe HgSe cubic – zinc blende 0.5667 d 2.80 2.58 2.89 8.1 0.21 0.6 500 30 0.608 d 1.85 1.75 10.6 0.13 800 0.6085 −0.22 23 0.05 0.02 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table 12 Semiconducting AII BVI tellurides Compound ZnTe Crystalline structure Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) CdTe HgTe cubic – zinc blende 0.6101 d 2.39 2.2 3.56 9.7 0.15 0.2 340 100 0.6477 d 1.60 1.50 2.75 10.9 0.11 0.35 1050 100 0.6453 −0.28 −0.015, 0.14 3.7 20 0.029 −0.3 Table 13 Semiconducting AIV BVI tin compounds Compound SnS Crystalline structure orthorhombic distorted – – distorted NaCl Lattice parameters at 300 K (a, b, c), nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) SnSe 1.157 0.419 0.446 d 1.120 0.399 0.434 i 1.09 0.9 SnTe 32 0.2 90 0.36 45 0.15 0.07 840 519 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table 14 Semiconducting AIV BVI lead compounds Compound PbS Crystalline structure PbSe PbTe cubic – NaCl Lattice parameter at 300 K, nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons, in m0 units Mass of holes, in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 0.5936 d 0.29 0.41 170 0.25 0.25 600 700 0.6117 d 0.15 0.28 210 0.04 0.6462 d 0.19 0.31 ∼1000 0.17 0.20 6000 4000 Table 15 Semiconducting Group II silicides Compound Mg2 Si Ca2 Si Ca3 Si4 BaSi2 Crystalline structure cubic – CaF2 orthorhombic hexagonal orthorhombic – BaSi2 Lattice parameters at 300 K (a, b, c), nm 0.63512 Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV i 0.65 0.78 Refractive index Rel permittivity (static dielectric constant) Mass of electrons (mx ,my ,mz ), in m0 units 0.64 0.10 0.71 0.16 2.21 2.30 Mass of holes (mx ,my ,mz ), in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 520 0.7691 0.4816 0.9035 d 0.35, 1.0 406 56 0.8541 1.4906 i 0.35 >1 0.7 1.0 0.46 >1 0.83 ∼50 0.8942 0.6733 1.1555 i 0.83 1.10 1.30 0.60 0.37 0.30 0.31 0.73 0.67 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table 16 Semiconducting Group VI silicides Compound CrSi2 Crystalline structure Lattice parameters at 300 K (a, c), nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons (mx ,my ,mz ), in m0 units Mass of holes (mx ,my ,mz ), in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) MoSi2 WSi2 hexagonal – CrSi2 0.44281 0.63691 i 0.35 0.4596 0.6550 i 0.07 0.4614 0.6414 i 0.07 0.69 0.66 1.49 1.10 1.20 0.82 0.38 0.33 0.73 0.43 0.55 0.50 0.33 0.30 0.65 0.39 0.57 0.45 10 200 220 Table 17 Semiconducting Group VII silicides Compound MnSi2−x ReSi1.75 Crystalline structure tetragonal triclinic α = 89.90◦ Lattice parameters at 300 K (a, b, c), nm a = 0.5530 c = 1.7517 4.7763 6.5311 11.79 i 0.7–0.8 0.7–0.9 0.3138 0.3120 0.7670 Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons (mx ,my ,mz ), in m0 units Mass of holes (mx ,my ,mz ), in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 8.17 8.17 3.40 1.64 1.64 5.72 230 i 0.15 0.35 0.32 0.37 0.27 0.27 11.82 370 521 Appendix – main properties of intrinsic (or lightly doped) semiconductors Table 18 Semiconducting Group VIII disilicides Compound β-FeSi2 Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons (mx ,my ,mz ), in m0 units Mass of holes (mx ,my ,mz ), in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) OsSi2 orthorhombic – β-FeSi2 Crystalline structure Lattice parameters at 300 K (a, b, c), nm RuSi2 0.98792 0.77991 0.78388 d/i 1.0053 0.8028 0.8124 ? 1.0150 0.8117 0.8223 i 0.78–0.87 0.35–0.52 1.4 >>1 0.21 0.27 0.27 900 200 Table 19 Semiconducting Group VIII silicides (except disilicides) Compound Crystalline structure Lattice parameters at 300 K (a, b, c), nm Nature of the Egap (d – direct, i – indirect) Fundamental Egap at K, eV Fundamental Egap at 300 K, eV Refractive index Rel permittivity (static dielectric constant) Mass of electrons (mx ,my ,mz ), in m0 units Mass of holes (mx ,my ,mz ), in m0 units Mobility of electrons at 300 K, cm2 /(V·s) Mobility of holes at 300 K, cm2 /(V·s) 522 Ru2 Si3 Os2 Si3 orthorhombicRu2 Si3 OsSi Ir3 Si5 cubicFeSi monoclinic α = 89.90◦ 1.1057 0.8934 0.5533 d 1.1124 0.8932 0.5570 d 0.4729 0.6406 1.4162 1.1553 i 0.7–1.0 2.3 0.34 1.2 3.28 2.85 0.61 0.47 0.15 0.45 2–3 2–3 ... Examples are astigmatism, chromatic or lateral aberration, coma, curvature of field, distortion, and spherical aberration In astronomy, it is an apparent angular displacement in the direction of motion... law (mechanics) stating that friction is independent of the velocity, and the law of Leonardo da Vinci stating that friction is independent of the area of contact In particular, Leonardo da Vinci... roughness and the sliding velocity In fact, this statement is a combination of a few laws: the law of Euler and Amontons stating that friction is proportional to the loading force, the law of Coulomb