...
semiconductor device modelling, for high-speed state-of-the-art design, an in-
depth understanding of the second-order effects of device operation and their model-
ling is considered critical.
It ...
BJT
pro-
cesses3),
MOS
circuits normally use two complementary types of transistors-n-
channel
and
p-channel. While n-channel devices conduct with a positive gate voltage,
p-channel...
...
Drain-to-substrate
Q
ccurrent
-
-
-
Fig.
1.24
Drain-to-substrate
current caused
by
electron-hole poirs generoted
by
impact
ionization ot drain end of channel.
26
Chapter
1
IntegratedCircuit ... concepts that a microcircuit designer
is
likely to encounter-short-channel effects, subthreshold operation, and leakage cur-
rents.
Short-Channel
Effects
A
number o...
... Performance of Sample-and-Hold Circuits 444
11.1.1 Testing Sample and Holds 445
11.2 MOS Sample-and-Hold Basics 446
11.3 Examples of CMOS S/H Circuits 452
11.4 Bipolar and BiCMOS Sample-and-Holds 456
11.5 ... Second-Order Low-Pass Transfer Functions with Complex Poles 163
4.2 Frequency Response of Elementary Transistor Circuits 165
4.2.1 High -Frequency MOS Small-Signal Model 165
4.2.2 Com...
... identi®cation to the initial design may be
termed as design- in-the-large [2]. The second segment that leads from an initial
design to the detailed design has been called design- in-the-small. It is for this ... microwave circuit designers and antenna designers have used
different types of design tools. However, the design of integrated circuit antenna
modules calls for concu...