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Thin Film Interference

Tài liệu Báo cáo

Tài liệu Báo cáo " Survey of WO3 thin film structure built on ito/glass substrates by the Raman and xrd spectroscopies" doc

... case, the vibrational frequencies of m -WO3 are quite higher than these of o -WO3 And the reason is that parameters of crystalline structure of m -WO3 are smaller than that of o -WO3 or the force constant ... cm-1 of covalent bonds W – O, there is only one clear modification, comparing to Raman spectra of film on thinner ITO layers The only difference is a composition of two peaks, one at 680 cm-1 and ... cm-1 of thin film WO3/ ITO 300nm and investigated XRD and Raman spectra of WO3/ ITO 350 nm Analyzing the spectra of WO3/ ITO 300 nm, we received one peak which is not sharp and corresponds to the...
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Tài liệu MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Thin Film Leaded Resistors pptx

Tài liệu MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Thin Film Leaded Resistors pptx

... www.vishay.com/doc?91000 MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Precision Thin Film Leaded Resistors Vishay Beyschlag Power Dissipation P FUNCTIONAL PERFORMANCE MBE/SMA 0414 MBB/SMA 0207 MBA/SMA ... www.vishay.com/doc?91000 MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Precision Thin Film Leaded Resistors Current Noise A1 Vishay Beyschlag µV/V 0.1 MBE/SMA 0414 MBB/SMA 0207 MBA/SMA 0204 0.01 ... www.vishay.com/doc?91000 MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Precision Thin Film Leaded Resistors Vishay Beyschlag PACKAGING - Axial products BOX TAPING ACC IEC 6028 6-1 TYPE PIECES CODE MBA/SMA...
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Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx

Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx

... reduction of electron concentration in the N2 Otreated films Conclusions The postfabrication N2 O plasma treatment on the asfabricated MOCVD ZnO TFTs changed their device operation from depletion-mode ... number of ionized oxygen vacancies in the ZnO film.57–59,61–63) In general, an ionized oxygen vacancy in a ZnO film donates two electrons to the conduction band, which is mainly responsible for ... as-fabricated and N2 O -plasma- treated ZnO TFTs As-fabricated Device operation Depletion-mode Drain current at zero VGS 3.3 Characteristics of N2 O -plasma- treated ZnO TFTs 3.3.1 N2 O plasma treatment for...
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gas sensing properties of metal - organics derived pt dispersed - tio2 thin film fired in nh3

gas sensing properties of metal - organics derived pt dispersed - tio2 thin film fired in nh3

... 270–274 272 Table Relative resistance of the thin film fired in different atmosphere Žmeasured at 2008C Number Firing atmosphere Kind of thin film Kind of measuring gas Relative resistance 1a 1H 2a ... al., Gas sensing properties of platinum dispersed- TiO2 thin film derived from precursor, Sens Actuators, B 62 Ž2000 55–60 w13x M Egashira, Y Shimizu, Y Takao, Enhancement of trimethylamine sensitivity ... by the ratio of the resistance in air to that in 1000 ppm H First, in the case of the thin film fired in NH , the resistance of the TiO Pt film was compared with that of the TiO film Although...
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highly sensitive thin film nh3 gas sensor operating at room

highly sensitive thin film nh3 gas sensor operating at room

... composite sensors still operate at elevated temperatures To the best of our knowledge, it seems that experimental data on SnO2 /CNTs composite-based gas sensors operated at room temperature are ... powder and thin film formations 3.2 Gas sensor characteristics 3.2.1 Sensor response at room temperature and sensing mechanism Fig plots a typical response curve to NH3 gas at room temperature of ... of NH3 gas at room temperature The composite sensor can solve the problems of SnO2 -based and carbon nanotubes-based sensors; the former cannot detect NH3 gas at room temperature and the latter...
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influence of polymerization temperature on nh3 response of pani tio2 thin film gas sensor

influence of polymerization temperature on nh3 response of pani tio2 thin film gas sensor

... Response time (T1 ) and recovery time (T2 ) of sensors based on PANI/ TiO2 thin films prepared at 0, 10 and 20 ◦ C when exposed to NH3 of various concentrations at room temperature Concentration ... absorbance wavelengths of PANI/ TiO2 thin films prepared at different polymerization temperature Polymerization temperature (◦ C) Fig FTIR spectra of pure PANI and PANI/ TiO2 composite λ1 (nm) λ2 ... fabricate PANI/ TiO2 thin films, where simultaneous polymerization of aniline monomer and oxidation of PANI molecules occurred The active solution for PANI/ TiO2 nanocomposite material contained...
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modeling of the conduction in a wo3 thin film as ozone sensor

modeling of the conduction in a wo3 thin film as ozone sensor

... spread out between adjacent grains is increased by oxidizing vapours and decreased in the opposite case [6–8], that implies a variation of resistivity in the same way Since 1980, many authors have ... polycrystalline layer made up of grains which have a great disparity of shape and size In this work, the grains are supposed to be quasi-spherical, identical in size, and single-crystal They are jointed, ... was already described The interaction between the gas and the surface was modeled by Langmuir isotherm and the electrical resistivity was evaluated by solving the transport equations This paper...
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new technology of metal oxide thin film preparation for chemical sensor application

new technology of metal oxide thin film preparation for chemical sensor application

... could be formed during the process of interruption The prolongation of film growth on the “extra” interface involves a new nucleation of the metal oxide film, the formation and growth of a film ... of the sensors heavily depend on the conditions and methods used in their preparation [27–31] Since grain size is one of the key factors to enhance the gas sensing properties of metal oxide sensors, ... allowed obtaining the enhancement of catalytic properties of Pt-SiO2 thin films, as well [26] Among metal oxide semiconductors, tungsten oxide is a promising material for gas sensing Several studies...
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sensitivity properties of a novel no2 gas sensor based on mesoporous wo3 thin film

sensitivity properties of a novel no2 gas sensor based on mesoporous wo3 thin film

... Selected-area electron diffraction patterns recorded on mesoporous WO3 that is characteristic of diffuse electron diffraction rings demonstrate that the walls of our material are made up of nanocrystallite ... lead to excellent sensing properties upon exposure to low concentration of NO2 in air at low temperatures and enabled the selective detection of NO2 and H2 gases A high surface area and small ... Tainan, Taiwan, 2001 His major research has related to mesoporous materials, semiconductor gas sensor, and nanomaterials Min Hsiung Hon is a professor in the Department of Materials Science and Engineering...
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thin film polypyrrole swcnts nanocomposites-based nh3 sensor

thin film polypyrrole swcnts nanocomposites-based nh3 sensor

... Manuscript Thin Film Polypyrrole/ SWCNTs Nanocomposites-Based NH3 Sensor ip t Operated at Room Temperature Nguyen Van Hieu a,*, Nguyen ... The thin film and the porous film could be the reasons explaining why the PPY /SWCNTs composite-based sensor exhibits a higher response compared to that of PPY-based sensors Additionally, SWCNTs ... the PPY /SWCNTs composite sensor depends on the reactivity and diffusion of NH3 gas molecules inside the composite-sensing thin film Therefore, when the thickness of the film decreases, the sensor...
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tio2 thin film gas sensor for monitoring ammonia

tio2 thin film gas sensor for monitoring ammonia

... electrodes In the present study a planar structure thin film gas sensor was fabricated with TiO2 as the sensing layer A thin sensitive TiO2 film was deposited by a DC reactive magnetron sputtering ... planar structure thin film gas sensor was fabricated with TiO2 as the sensing layer A thin sensitive TiO2 684 B Karunagaran et al / Materials Characterization 58 (2007) 680–684 film was deposited ... sensitivity factor of the TiO2 thin film sensor is measured by using the circuit shown in the Fig The conductance G of the film in air and test gas is calculated using the formula: G¼ Vs Rs ðV −Vs...
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wet process-based fabrication of wo3 thin film for no2 detection

wet process-based fabrication of wo3 thin film for no2 detection

... Morphology of WO3 thin films Thin films of WO3 could be derived from the WO3 ·2H2 O sol added with PEG (2 wt.%) by one time spin coating and calcination at 300 ◦ C for h Fig shows SEM images of the thin ... films of WO3 for NO2 sensing, Sens Actuators B 95 (2003) 258 Conclusions Biographies An aqueous sol of WO3 ·2H2 O, added with PEG, could be applied successfully for fabricating a thin film of WO3 ... the crystals of WO3 ·2H2 O and that of WO3 : The basal plane (0 0) of WO3 ·2H2 O is converted into the basal plane (0 2) of WO3 [12] As shown by the cross-sectional view Fig 1c, the thin films were...
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wo3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine

wo3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine

... sensitive to TMA at 50–85◦ C, but not sensitive to NH3 , gasoline, C2 H5 OH, CH4 and CO and water vapor These results indicate that the WO3 thin film sensor prepared by a sol–gel Fig X-ray photoelectron ... lie at 37.1 and 35.20 eV, respectively and are contributed to lattice tungsten in the WO3 crystal 3.2 Gas sensing properties of the thin film sensors Results and discussion 3.1 The XRD and XPS analyses ... photoelecton peak of O 1s is found to lie at 530.2 eV, and is assigned to lattice oxygen in the WO3 crystal As shown in Fig 2(c), the photoelectron peaks of W 4f5/2 and W 4f7/2 are found to lie...
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Báo cáo

Báo cáo "Investigation of zinc oxide thin film by spectroscopic ellipsometry " ppt

... calculated quantities, Thin Solid Films 313314 (1998) 33 [6] R Swanepoel, Ellipsometry data for some thin film samples, J Phys E: Sci Instrum., 16 (1983) 1215 [7] Jobin-Yvon, Horiba Group Ellipsometry ... conditions (e.g the angle of polarization mirrors and modulators) and parameters of film (∆, Ψ) The measurement configuration is chosen for the purpose of simplifying the calculation of trigonometry functions ... Ellipsometric data have been analyzed by Delta Psi software (Jobin – Yvon Co.) Fig shows ellipsometer spectra Is(λ), Ic(λ) of a ZnO film Transmission spectra of the sample were measured on a Jasco...
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MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Professional Thin Film Leaded Resistors docx

MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Professional Thin Film Leaded Resistors docx

... Number: 28766 Revision: 03-Dec-12 ±1% 920 - - 825 - ± 0.5 % MBE 0414 920 - - 825 - ±1% 921 - - 826 - ± 0.5 % 921 - - 826 - For technical questions, contact: filmresistorsleaded@vishay.com www.vishay.com ... www.vishay.com/doc?91000 MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Professional Pulse Load Pmax Professional Thin Film Leaded Resistors Vishay Beyschlag MBE/SMA 0414 MBB/SMA 0207 MBA/SMA 0204 100 W ... www.vishay.com/doc?91000 MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Professional Professional Thin Film Leaded Resistors Test Voltage Vishay Beyschlag 10 kV kV 100 V MBE/SMA 0414 MBB/SMA 0207 MBA/SMA 0204...
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