... NanoLetters (2004) 433 [8] [9] [10 ] [11 ] [12 ] [13 ] [14 ] [15 ] [16 ] [17 ] [18 ] [19 ] [ 20] [ 21] [22] [23] [24] [25] 3037 J Kikkawa, Y Ohno, S Takeda, Appl Phys Lett 86 (2005) 12 310 9 X Zhao, C.M Wei, L Yang, ... proposed in Si NWs along the [0 1] direction [24] Since both p-bonded chain and p(2 Â 1) reconstructions on Si( 1 1) and Si( 0 1) , respectively, exhibit semiconductor behaviour, such electronic structures ... relative stability of Si NWs is determined using the formation energy Ef [18 ] written as Ef ¼ Etot À nSi lSi À nH lH þ nH ez ; 1 For the flat Si( 1 1) surfaces, the validity of surface separation...