... by epitaxial mismatch with a substrate, will change phosphorene from a direct-gap to an indirect-gap semiconductor with a significantly smaller gap Details of the computational approach are listed ... Interest: The authors declare no competing financial interest 4040 2014 www.acsnano.org ARTICLE 36 Fang, H.; Chuang, S.; Chang, T C.; Takei, K.; Takahashi, T.; Javey, A High- Performance Single Layered ... transfer curves for drain bias values Vds = 0.01 and 0.5 V, which indicate a current on/ off ratio of ∼104, a very reasonable value for a material with a bulk band gap of 0.3 eV We also note that,...