Growth and characterization of oxide thin films on silicon by pulsed laser deposition

... method of pulsed laser deposition (PLD); investigate the growth mechanism of high quality MgO films on silicon Fabricate highly oriented CoFe2O4 films on silicon with the help of MgO buffer layer and ... thesis 2.1.1 Pulsed- laser deposition One of the most significant approaches to oxide film growth is pulsed- laser deposition Pulsed- laser deposition (PLD) is now a widely used deposition approach ... BiFeO3 thin films on silicon with the Pt buffer by the method of PLD; investigate ferroelectric, ferromagnetic and magnetoelectric properties of these Ba-doped BiFeO3 thin films on silicon and their...

In situ growth and characterization of epitaxial NI films on MGO substrates

... form of crystal growth has revolutionized opto-electronic materials technology and is beginning to impact the new frontier of spintronics Epitaxial Ni/ insulator interfaces are of growing interest, ... are two kinds of sputtering: cathodic 11 Chapter Introduction sputtering and reactive sputtering One of the main differences in the mode of growth of sputtered deposits, in comparison with evaporated ... subject of the growth of Ni on MgO( 100), and we begin with a discussion of this prior work We then briefly review the subject of in- situ electron microscopy 2.1 Previous Studies of Ni on MgO There...

Preparation and characterization of ferroelectric thin films for tunable and pyroelectric applications

... potential of BTS thin films The efforts toward improving the tunable and pyroelectric properties of BTS thin films have demonstrated the appealing prospective applications of BTS thin films in the ... investigating the tunable and pyroelectric properties of the B-site doped BaTiO3, i.e., Ba(Ti1-xSnx)O3 (BTS) thin films The effects of stress and microstructure on the tunable properties of BTS thin films ... Shu and P Wu, Comparative study of effects of Mo and W dopants on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 thin films, Journal of Physics D 41, 135402 (2008) S.J Wang, L Lu, M.O Lai, “Pyroelectric...

Growth and characterization of nickel oxide thin films and nanostructures for novel device applications

... dissertation, the growth and characterization of nickel oxide (NiO) for various novel device applications are investigated In the aspect of growth, many methods of both solution-based and physical ... nanowires was demonstrated for the first time The applications of NiO thin films and nanostructures were then investigated for resistive switching memory and electrochromic devices For the NiO resistive ... Literature Review Growth of NiO Thin Film 2.1.1 Physical deposition of NiO thin film 2.1.2 Solution growth of NiO thin film 2.2 Growth of NiO Nanostructures by Thermal...

hydrothermal synthesis and characterization of tio2 nanorod arrays on glass substrates

... distribution of TiO2 nanorods grown on PT-substrate at an annealing temperature of 700 8C and at a hydrothermal growth temperature of 160 8C and with growth time of h Fig SEM image of TiO2 nanorod arrays ... electron diffraction of TiO2 nanorods; (b) lattice fringes image of high-resolution TEM of one single TiO2 nanorod at the side surface that TiO2 nanorods grow along the (1 0) crystal planes, and ... orientation becomes poor, and the diameter distribution of TiO2 nanorods becomes wide The microstructure of TiO2 nanorods was further analyzed using TEM and HRTEM Two rods with a diameter of about...

preparation and characterization of monodispersed wo3 nanoclusters on tio2(110)

... physisorption on Ti4+ cations and the second maximum (45 Æ K) is ascribed to N2 physisorption on O2À anions On as-deposited WO3, the TPD intensity of physisorbed N2 attributable to adsorption on Ti4+ ... would contain 2.6 (WO3) 3 nmÀ2, i.e., one (WO3) 3 cluster for every pair of Ti4+ along the [001] direction With this deﬁnition, deposition of 7.8 nmÀ2 of WO3 corresponds to ML of trimers Although ... spontaneous formation of such trimers directly upon room temperature deposition A detailed description of the chemisorption bonding between (WO3) 3 and TiO2(110) awaits theoretical calculations Qualitatively,...

Báo cáo hóa học: " Preparation and characterization of superhydrophobic surfaces based on hexamethyldisilazane-modified nanoporous alumina" pptx

... angles on nanoporous alumina AK and CE participated in the design of the study and coordination of the work All authors contributed to interpretation of the results and drafting of the manuscript and ... technological applications Additional material Additional file 1: Water contact angles on alumina surfaces Contact angles of the water droplets on HMDS-modified thin film and nanoporous alumina surfaces Acknowledgements ... Preparation and characterization of superhydrophobic surfaces based on hexamethyldisilazane-modified nanoporous alumina Nanoscale Research Letters 2011 6:487 Submit your manuscript to a journal and...

Báo cáo hóa học: " Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires" pot

... doi:10.1186/1556-276X-6-187 Cite this article as: Potié et al.: Growth and characterization of gold catalyzed SiGe nanowires and alternative metal -catalyzed Si nanowires Nanoscale Research Letters 2011 ... mechanical characterization has also been carried out on Si and GaN NW for comparison SiGe NW growth First, the growth of SiGe NW using gold as catalyst is reported Gold is particularly suitable for SiGe ... case of Si and Ge SCs, gold is often used as an efficient catalyst The physical properties of Si and Ge make it possible to synthesize a wide range of composition alloys as well as a variety of...

Báo cáo hóa học: " Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2 Buffer Layers in Dye-Sensitized Solar Cells" docx

... 0.86–1.02% by introducing the TiO2 blocking layer The increase in Isc can be attributed to the increase in the aspect ratio of the nanowire arrays with and without the TiO2 blocking layer from ... spincoating, resulting in the maximum loss of Voc (about 40 mV) In order to further investigate the effect of a TiO2 buffer layer on the performance of ZnO nanowire- based DSSCs, a TiO2 blocking ... by introducing a blocking layer at the base of the ZnO ﬁlms, the in uence of the blocking layer on the performance of ZnO DSSCs is an ongoing debate [10] In this study, we report that the ZnO nanowire...

Indication of density dependent changes in growth and maturity of the barndoor skate on georges bank

... 10.1080/19425120.2013.824941 ARTICLE Indication of Density- Dependent Changes in Growth and Maturity of the Barndoor Skate on Georges Bank Karson Coutr´ * e Marine Science Center, University of New England, 11 Hills Beach ... using the index of 263 GROWTH AND MATURITY OF BARNDOOR SKATE SEXUAL MATURITY Females.—Sexual maturity in females was assessed by examining developmental changes in the gross morphology of the ... the onset of maturity in elasmobranchs can be altered as a function of density- dependent changes in biomass Thus, the delayed maturity observed in the current study supports the notion that the...

DEFECT INDUCED NOVEL ELECTRICAL, MAGNETIC AND OPTICAL PROPERTIES OF TIO2 THIN FILMS GROWN BY PULSED LASER DEPOSITION

... electronic and magnetic properties of epitaxially grown transition metal doped TiO2 thin films by pulsed laser deposition technique on different metal oxide substrates Crystal Structure of TiO2 TiO2 ... magnetic semiconductor applications The objective of this thesis is to investigate the defect induced electrical, optical, magnetic and structural properties of titanium dioxide (TiO2) thin films ... dioxide (TiO2) thin films grown by pulsed laser deposition (PLD) technique Single crystal TiO2 and tantalum (Ta) doped TiO2 (Ti1-xTaxO2) thin films of different thicknesses were grown epitaxially on...

MBE growth and characterization of ge1 xmnxte ferromagnetic semiconductors

... equipments and setup are also discussed Chapter presents the results and discussion on the structural and optical properties of Ge1- xMnxTe films The growth conditions of the MBE growth of Ge1- xMnxTe ... AND DISCUSSION: MAGNETIC AND TRANSPORT PROPERTIES OF Ge1- xMnxTe FILMS .102 6.1 Magnetic Properties of Ge1- xMnxTe thin films .102 6.1.1 Field dependent magnetic properties of Ge1- xMnxTe ... line-analysis mode of Ge1- xMnxTe x=0.24 (a) and x=0.55 (b) films………………………………………………… 88 Figure 5-16 Elements mapping of Ge1- xMnxTe x = 0.55 sample……………….89 Figure 5-17 Elements mapping of Ge1- xMnxTe x =...

Growth and characterization of germanium and silicon nanostructures

... exploration of self-assembled synthesis and the possible applications of new Si and/ or Ge nanostructures and, (b) achieving a controlled growth of Si and Ge nanostructures 1.4 Organization of Thesis ... Abstract In this dissertation, the growth and characterization of five different types of germanium (Ge) and silicon (Si) nanostructures are presented The nanostructures include one-dimensional ... Temperature profiles of Ge and GeI4 sources and Au-dotted Si substrate for the growth of the wire-tube heterostructures 93 Figure 5-8 Schematic depiction of the growth mechanism of type-1...

Fabrication and characterization of memory devices based on organic polymer materials

... structure for memory application Results of the present study may enhance our understanding of the application of organic and polymer materials to the organic memory device and it may also contribute ... observed from a lot of organic/ polymer materials based device since 1960s, none of the devices based on these materials can fulfill all the requirements for memory application It is commonly known that, ... technologies based on organic materials are still at the conceptual and experimental levels, while some of those based on inorganic materials are almost matured and are identified as prototypical memory...

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