Tunneling field effect transistors for low power logic design, simulation and technology demonstration

... TUNNELING FIELD- EFFECT TRANSISTORS FOR LOW POWER LOGIC: DESIGN, SIMULATION, AND TECHNOLOGY DEMONSTRATION YANG YUE (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... relatively large bandgap, leading to a low band-to-band tunneling (BTBT) rate and low drive current for Si TFETs Therefore, novel structure designs and materials are need advance the TFET technology ... mr , Tunneling reduced mass for Γ - Γ direct band-to-band tunneling kg * mr ,L Tunneling reduced mass for Γ - L indirect band-to-band tunneling kg NA Acceptor concentration cm-3 N c , Effective...

Advanced transistors for supply voltage reduction tunneling field effect transistors and high mobility MOSFETS

... ADVANCED TRANSISTORS FOR SUPPLY VOLTAGE REDUCTION: TUNNELING FIELD- EFFECT TRANSISTORS AND HIGH- MOBILITY MOSFETS GUO PENGFEI (B ENG (HONS.)), NUS A THESIS SUBMITTED FOR THE DEGREE ... tr Rise time s V Voltage V Va Voltage amplitude V Vbase Base level voltage V VDD Supply voltage V VDS Drain voltage V VFB Flatband voltage V VGS V VTH Gate voltage Maximum gate voltage in the offstate ... current and the operation frequency of an integrated circuit (IC) increase To reduce the power consumption, supply voltage VDD needs to be lowered Tunneling field- effect transistors (TFETs) and high- mobility...

Fabrication and characterization of tunneling field effect transistors (TFETs)

... FABRICATION AND CHARACTERIZATION OF TUNNELING FIELD EFFECT TRANSISTORS (TFETs) YANG LITAO B Eng (Hons.), NUS A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL ... Chapter Experimental Study of Tunneling Field Effect Transistors This chapter documents the experimental study on the fabrication of tunneling field effect transistors (TFETs or tunneling FETs), performed ... band to band tunneling BBTBT Material related parameters for band to band tunneling xi CBTBT Material related parameters for band to band tunneling Eg Material band gap Ev,1, EFp,1 Valence band...

Contact and source drain engineering for advanced III v field effect transistors

... Abstract Contact and Source/ Drain Engineering for Advanced III- V Field- Effect Transistors By Kong Yu Jin, Eugene Doctor of Philosophy – Electrical and Computer Engineering National University ... metallization V Voltage Vd Voltage or bias applied to the drain of a MOSFET Vdd Supply voltage Vg Voltage or bias applied to the gate of a MOSFET Vt,sat Saturation threshold voltage of a MOSFET Vt Linear ... supply voltage, however, results in lower drive current and therefore slower transistors and circuits To avoid sacrificing performance at reduced supply voltage, carrier mobilities higher than even...

Tài liệu Junction Field Effect Transistors doc

... Databook.fxp 1/13/99 2:09 PM Page H-3 H-3 01/99 Junction Field Effect Transistors InterFET Application Notes Gate Gate P Source P Drain N P Source N Drain ... 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page H-4 H-4 01/99 Junction Field Effect Transistors InterFET Application Notes the gate to drain reverse biased depletion region ... voltage controlled tuning circuits Therefore it is clearly seen that many applications for Junction Field Effect Transistors exist Those discussed in this application note have many variations, refinements,...

Chapter 4 characteristics of field effect transistors

... CHAPTER 4: Characteristics Field- Effect Transistor CHAPTER 4: CHARACTERISTICS OF FIELD- EFFECT TRANSISTOR 4. 1 INTRODUCTION The operation of the field- effect transistor (FET) ... values of vDS in the pinchoff region:  v  iD  I DSS   GS   V  p0   Val de Loire Program p.61 CHAPTER 4: Characteristics Field- Effect Transistor 4. 4 JFET BIAS LINE AND LOAD LINE Fig 4- 3 ... channel of low resistivity If the source-to-drain voltage is increased, in the JFET Val de Loire Program p. 64 CHAPTER 4: Characteristics Field- Effect Transistor Fig 4. 5 MOSFET terminal characteristics...

Báo cáo hóa học: " High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors" pot

... result in the variation of the operation point, it is desirable to keep the current level constant over a range of temperatures In order to realize such operation of the nanoribbon FETs, we propose ... the bottom of the channel surface Table compares the off-state drain leakage portion of the two methods at different temperatures As shown in Table 1, in the case of method (1), the off-state ... substrate bias (VSUB) applied for the purpose of keeping the operation of the device constant for temperatures in the range from 25 to 150°C Constant on- and offstates were successfully accomplished...

Báo cáo hóa học: " Research Article Efﬁcient Algorithm and Architecture of Critical-Band Transform for Low-Power Speech Applications" pdf

... Section 1, a novel critical-band transform algorithm is proposed to approximate the critical-band filtering of the human ear It consists of two transforms: a constant- Q transform (CQT) in the ... speech systems In this study, we develop an efficient critical-band transform algorithm and an architecture for approximating the critical-band filtering of the human ear [12] The novel CBT scheme has ... proposed 21-band Bark scale critical-band transform is evaluated and compared with the OWPT method Figure shows the degree of approximation to the Bark scale critical bands both for the CBT and for the...

Báo cáo hóa học: " Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling" potx

... consumption ﬁgures for a 180 nm UWB receiver with the same functionality but relying on four-phase sampling of the full UWB pulse frame are 86 mW for four ADCs operating at 300 MHz and 75 mW for digital ... mixed-mode impulse UWB transceiver with ITRS 2004 roadmap parameters It is concluded that the leakage power consumption is going to become important in low-power UWB receivers with CMOS technology ... design techniques to tackle static and dynamic power consumption on top of CMOS scaling for enabling future low-power UWB radios A roadmap analysis of the power consumption of the front-end shows...

Design for Low Power potx

... Design for Low Power Slide 19 Low Power Design  Reduce dynamic power – α: clock gating, sleep mode – C: – VDD: – f:  Reduce static power CMOS VLSI Design Design for Low Power Slide 20 Low Power Design ... low leakage devices, Pstatic = 749 mW (!) CMOS VLSI Design Design for Low Power Slide 18 Low Power Design  Reduce dynamic power – α: – C: – VDD: – f:  Reduce static power CMOS VLSI Design Design ... Outline     Power and Energy Dynamic Power Static Power Low Power Design CMOS VLSI Design Design for LowSlide Power Power and Energy  Power is drawn from a voltage source...

CHAPTER 7: Junction Field-Effect Transistors doc

... leads: drain, gate, and source which are similar to the collector, base, and emitter of a bipolar junction transistor (BJT) • JFETs come in N-channel and P-channel types similar to NPN and PNP for...

Morphology and charge transport in polymer organic semiconductor field effect transistors

... oxygen and water molecules into the film more difficult, hence minimizing the doping of the polymer at the semiconductor- insulator interface 1.3 Nature of charge carriers The intrinsic motion of charge ... limited by the interchain transport of charge carriers instead of the relatively fast intrachain transport in the absence of backbone imperfections The morphology of the polymer semiconductor ... existence of disorder in the solutionprocessed thin films and electron-phonon coupling When a charge is introduced into the polymer chain, it causes a distortion in the chain and a polaron is formed...

Charge transport in polymer semiconductor field effect transistors

... anisotropic transport along the polymer chain and in π-stacking direction could be modeled as hopping in a cross lattice in αR space with αR defined as the interchain coupling strength This transport ... existing hopping transport models to compare the charge transport behavior in 2D and 3D In Chapter 3, we develop an “universal“ twodimensional charge transport model for field- effect transistors In ... Figure 3.2 Hopping transport in a cross lattice (R space) in polymer semiconductors (a) A simplified view of polymer chains (green) and hopping sites (red) in the -aggregation, longer interval between...

Investigation on performance and reliability improvements of gan based heterostructure field effect transistors

... characterization of Schottky contacts on n -GaN 64 Rh -based Schottky contacts on n -GaN 66 3.2 3.2.1 Electrical properties of Rh -based Schottky contacts on n -GaN 66 3.2.2 Role of Ni in Rh -based Schottky contacts ... INVESTIGATION ON PERFORMANCE AND RELIABILITY IMPROVEMENTS OF GAN- BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTORS TIAN FENG (M Eng., WUT) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... photoelectron spectroscopy 53 CHAPTER RH -BASED AND RUO2 SCHOTTKY CONTACTS ON N -GAN 3.1 Fabrication and characterization of Schottky contacts on n -GaN 57 3.1.1 Schottky contact fabrication 57 3.1.2...

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