The Materials Science of Thin Films 2011 Part 4 ppt
The Materials Science of Thin Films 2011 Part 4 ppt
... (4- 34a) (4- 34b) Note the use of the perfect gas law and the neglect of the temperature dependence of D. Maintenance of stoichiometry requires that JCd = JTez 9 (4- 35) the factor of ... view of the MOS field effect transistor structure in Fig. 4- 1 indicates the extent to which the technology is employed. Above the plane of the base P-Si wafer, all of the films with the ... requires that the ratio of the vapor pressure in the crucible to that in the vacuum chamber exceed lo4 to 10'. The arrival of ionized clusters with the kinetic energy of the acceleration...
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The Materials Science of Thin Films 2011 Part 1 ppt
... Mechanical Behavior 40 5 9.3. Internal Stresses and Their Analysis 41 3 9 .4. Stress in Thin Films 42 0 9.5. Relaxation Effects in Stressed Films 43 2 1.5. Thermodynamics of Materials 21 ... discipline of materials science and engineer- ing. A dramatic increase in our understanding of the fundamental nature of materials throughout much of the twentieth century has led to the development ... mass transport effects, and the role of stress. These are the common thin- film concerns irrespective of application. The final portion of the book (Chapters 10- 14) is largely devoted to specific...
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The Materials Science of Thin Films 2011 Part 12 pptx
... pm thick) Explain the function of these layers and the overall behavior of the lamp. 1 2. Explain why the thin- film coating consisting of air/SiO( h /4) /Ge( h /4) / opaque Al/glass ... substrates. The value of K, depends on a number of factors. Most important is the nature of the materials in contact, but the extent and type of lubrication, surface temperature, and nature of the ... over other types of filters. The reason is that there is very little absorption loss in dielectric film layers, since they rely on the effects of interference. 4. The principles of design...
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The Materials Science of Thin Films 2011 Part 13 ppt
... regime the temperature of the surface is largely determined by the initial distribution of the energy absorbed from the laser beam. Light penetrates within the material and the thermal ... events. Furthermore, the collective damage and zigzag motion of ions within the matrix cause them to deviate laterally from the surface entry point. When summed over the huge number of participating ... Lindhard-Scharff-Schiott (LSS) theory (Ref. 14) has quantified the nature of these ion-solid interactions and predicted the extent of partitioning of the energy loss. It is well established...
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The Materials Science of Thin Films 2011 Part 15 ppt
... Thin Film Device Applications, Plenum Press, New York (1983). 52. Index 701 Residual stress, 41 4 Resist, 630 Resistivity, 45 3 CoSi,, 46 2 four point probe, 45 4 metal film, 45 8 ,45 9 ... Superconducting materials, 48 1 type 1 ,48 2 type 11, 48 2 Superconductivity, 48 0, 48 2, 641 tunneling, 48 3 Superconductor, 641 Superconductor film, thermal cycling, 43 7 Superlattice, 661 -662 compositional, ... Schottky emission, 46 6 -46 7 ,47 4 Scratch test, 44 4 Se, 235 Secondary electrons, 267 Secondary ion mass spectroscopy (SIMS), see Seed atoms, 622 Seeman-Bohlin geometry, 2 74 Segregation coefficient,...
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The Materials Science of Thin Films 2011 Part 2 ppsx
... in the presence of an applied field. logarithm of the rate is plotted on the ordinate and the reciprocal of the absolute temperature is plotted along the abscissa. The slope of the resulting ... continuous state of random motion, which is intimately dependent on the temperature of the gas. During their motion the gas particles collide with each other as well as with the walls of the confining ... characteristic of both the diffusing species and the matrix in which transport occurs. The extent of 50 Vacuum Science and Technology is that the large number of atoms or molecules of the gas...
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The Materials Science of Thin Films 2011 Part 5 docx
... using the results of Fig. 4- 5. a. What is the physical significance of the slope of this Arrhenius plot? b. Calculate AH for the reaction given by Eq. 4- 22a, using data in Fig. 4- 4. 6. ... estimated in the capillarity theory. The uncertainties are now in i* and E;,. One of the important applications of this theory has been to the subject of epitaxy, where the crystallographic ... of the condensate. Shadowing is a phenomenon arising from the geometric constraint imposed by the roughness of the growing film and the line -of- sight impinge- ment of arriving atoms. The...
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The Materials Science of Thin Films 2011 Part 6 doc
... series of post-specimen lenses. The objective lens produces the first image of the object and is, therefore, required to be the most perfect of the lenses. Depending on how the beams reaching the ... time one of the diffracted beams is chosen by means of an aperture that blocks the central beam and the other diffracted beams. The micrograph of alternating 40 A-wide films in the GaAs-Al,,,Ga,~,As ... discussion of the analysis of diffraction effects is well beyond the scope of this book. Some notion of the correlation between structure and diffraction patterns can be gained from the model of thin...
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The Materials Science of Thin Films 2011 Part 8 pps
... Blakely, Thin Solid Films 25, 363, 1975). 3 64 Interdiffusion and Reactions in Thin Films the mathematical theories of GB diffusion including discussions of transport in these different ... array of Fig. 7-26a reflects the sixfold symmetry of the (111) plane, and the six fainter spots in between are the result of the (7 x 7) surface reconstruction. In RHEED, on the other ... the film is the basis of the first technique. In the commonly employed AES depth-profiling method, the film is analyzed continuously as it is simultaneously thinned by sputter etching. Profiles...
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The Materials Science of Thin Films 2011 Part 9 pot
... If the normal tensile stress ax = F/A, then the force resolved on these shear planes is F cos 45 = fi /2 F. The area of the shear planes is A /cos 45 = 2/ A. Therefore, the ... forces. After the load is removed, the stresses are expected to vanish. On the other hand, thin films are stressed 9 .4. Stress in Thin Films 42 5 epitaxial films, are based on X-ray diffraction ... Again on the basis of 3 84 interdiffusion and Reactions in Thin Films considering the second term on the right-hand side of Eq. 8-26. For the polarity shown, all terms in parentheses are...
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