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Engineering Materials and Processes phần 3 docx

Expert Systems for Human Materials and Automation Part 3 docx

Expert Systems for Human Materials and Automation Part 3 docx

... commentary labels. Expert Systems for Human, Materials and Automation 52 One can count any human as an expert who owns the valuable information about personal precedents. Such information can ... type Tk and also a set of subordinated attributes {AAmn} with the Expert Systems for Human, Materials and Automation 70 precedents) into the EmWIQA and function is accessible for program ... demonstrated aims only and therefore without explaining the variables and expressions. This function is kept in the knowledge base (with embedded Expert Systems for Human, Materials and Automation ...
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Optoelectronics Materials and Techniques Part 3 docx

Optoelectronics Materials and Techniques Part 3 docx

... the statically and time-resolved photoluminescence spectra of porous silicon, J. Phys. IV France 132 , 32 1 -32 4 Optoelectronics - Materials and Techniques 56 theories) and experimentally ... states and luminescence in porous silicon quantum-dots: the role of oxygen. Phys. Rev. Lett. 82,197-200 Optoelectronics - Materials and Techniques 72 spin density is about 1020 cm -3 and ... example, the simulations of the transmittance and reflectance spectra for SiOx with x=1. 43 are shown in figure 21. Optoelectronics - Materials and Techniques 54 Najar, A., Charrier, J.,...
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TRUYỀN HÌNH SỐ VÀ MULTIMEDIA (Digital Compressed Television and Multimedia) - Phần 3 docx

TRUYỀN HÌNH SỐ VÀ MULTIMEDIA (Digital Compressed Television and Multimedia) - Phần 3 docx

... dữữliliệệu khu kháác c nhau (RAID nhau (RAID - - 0; RAID 0; RAID - - 3; RAID 3; RAID - - 5; RAID 5; RAID - - 6; 6; RAID RAID - - 7), d7), dễễ hư h hư hỏỏng.ng. Băng ... M2. Mạạng (Networks)ng (Networks) 3. Software 3. Software 6 .3. 6 .3. PhPhầần mn mềềm Multimedia: m Multimedia: 1. Multimedia Toolbox: ph1. Multimedia Toolbox: phầần mn mềềm ... vvààtruy ctruy cậập)p) Giao diện & mạngĐường truyền hội nghị VideoISDNADSLDS-1DS -3 EthernetFast EthernetSCSI -2 SCSI -3 CD-ROMATMFiber channelFDDITốc độ dữ liệu56 kb/s – 1,5Mb/s144kb/s6,144...
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environmental engineering dictionary and directory phần 6 docx

environmental engineering dictionary and directory phần 6 docx

... latitude 66 °34′north and 66 °34′ south to the poles.polder An area of dry, low-lying land that has been reclaimed from a body ofwater and is maintained through the use of dikes. In the Netherlands, ... demand has beensatisfied. Also called “second-stage biochemical oxygen demand.”nitrogenous BOD See “nitrogenous oxygen demand.”nitrogenous oxygen demand (NOD) That portion of the oxygen demand ... properties.one-hundred-year flood plain Land adjoining inland and coastal waters which,on the average, is likely to ood once every 100 years.OnguardđInstrumentation and control products by Ashland Chemical, DrewIndustrial.oocyst...
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environmental engineering dictionary and directory phần 3 doc

environmental engineering dictionary and directory phần 3 doc

... (2) Environmental health and safety.EI Emissions inventory.EIA Environmental impact assessment.EIC European International Contractors.EIL Environmental impairment liability.EimcođWater and ... daily cover Cover material spread and compacted on the top and side slopes ofcompacted solid waste at the end of each day to control fire, moisture, and erosion and to assure an aesthetic appearance. ... the ascending and descending wire mesh panels and exitsthrough the center of the screen.dual media filter Granular media filter utilizing two types of lter media, usuallysilica sand and anthracite.DualatorđGravity...
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Engineering Materials and Processes phần 1 doc

Engineering Materials and Processes phần 1 doc

... Engineering Materials and Processes Dedicated to our ever patient, supportive and loving wives, Madeline, Katherine and Betty 1 Introduction 1. 1 Silver Metallization ... ………………………….…………… … 10 4 6.3.3 Results and Discussions ……………………………………… 10 5 6.3.4 Conclusions ………………………………………………….… 10 9 6.4 References …………………………………………………………… 11 0 7 Summary ……………………………………………………………… …. 11 3 ... …. 11 3 7 .1 Introduction ……………………………………………………… … 11 3 7.2 Thermal Stability: Diffusion Barriers and Self-encapsulation … … 11 3 7.3 Electromigration Resistance …………………………………………. 11 7 7.4 Future...
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Engineering Materials and Processes phần 2 pptx

Engineering Materials and Processes phần 2 pptx

... The ratio of the projectile energies for M1 < M 2 is given by: 2 1 22 2 2 121 1o21E(MMsin)McosKEMM⎡⎤−ϑ+ϑ⎢⎥==⎢⎥+⎢⎥⎣⎦ (2. 1) The energy ratio K = E1/Eo , called the kinematic ... a mass M 2 = 108 and In has a mass M 2 = 115. The difference between KAg = 0.8 62 and KIn = 0.870 is 0.008. For 2. 8 MeV helium ions, the difference in backscattering energy is 22 keV which ... Shacham-Diamand, E. G. Colgan, Appl. Phys. Lett. 60. 29 83(19 92) . [4] D. Adams, and T. L. Alford, Materials Science and Engineering: Reports 40, 20 7 (20 03). [5] T. Iijima, H. Ono, N. Ninomiya, Y....
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Engineering Materials and Processes phần 3 docx

Engineering Materials and Processes phần 3 docx

... content and composition of the TaN films. The 3. 0 MeV and 3. 7 MeV beam energies correspond to oxygen (O) and nitrogen (N) resonances, respectively, and were used to detect O and N. The 3. 0 MeV ... corrosion occurs up to 30 0°C (Figure 3. 6). The sample surfaces retained their smoothness, and golden color, and no difference between the sample at 30 0°C (in H2S) and the nitrided (no sulfur ... Figure 3. 6. Ag(19 at.% Ti) alloy was nitrided at 600°C for 30 minutes in NH 3 . The RBS spectra show depth distributions of the nitrided alloy, after annealing at 30 0, 400 and 500°C for 30 minutes...
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Engineering Materials and Processes phần 4 pptx

Engineering Materials and Processes phần 4 pptx

... (c) 30% N2 and (d) 40 % N2 [5] Diffusion Barriers and Self-encapsulation 39 3 .4. 4 Discussion The RBS data showed that the N2 flow ratio influences the composition, phases, and thicknesses ... Diffraction Standard (JCPDS ICDD cards #: 25-1280, 26-0985, 32-1282, 25-1278, 14- 047 1, 31-1370, & 32-1283), PDF Database, 19 94. [18] G. S. Chen, and T. S. Chen, J. Appl. Phys. 87, 847 3(2000). ... Laursen and B. M. Ullrich, Appl. Phys. Lett., 68, 3251(1996). [9] D. Adams, T. Laursen, T. L. Alford, and J. W. Mayer. Thin Solid Films 308–309, 44 8(1997). [10] N. Marecal, E. Quesnel, and Y....
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Engineering Materials and Processes phần 5 pptx

Engineering Materials and Processes phần 5 pptx

... 250 °C 300°C 350 °C Pa-n/Si 8.0 6.9 5. 5 4 .5 Ag/Pa-n/Si 4.4 4.4 5. 5 5. 5 Thermal Stability 47 Figure 4.3. Electrical resistivity of Ag, Ag(Al)-I, and ... As-deposited 100°C 250 °C 300°C 350 °C R µΩ-cm 2.73 2 .55 1. 95 1.87 3.48 60 Silver Metallization about 13 nm thick for the sample annealed at 700°C and that the thickness ... dielectric constant, the materials must have a good adhesion to silicon and to interconnect materials and thermal stability. Thermal stability is important to device characteristics and reliability....
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Engineering Materials and Processes phần 6 doc

Engineering Materials and Processes phần 6 doc

... Gadre and T. L. Alford, J. Vac. Sci. Technol. B 18 (6) , 2814(2000). [8] L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis (North-Holland), New York, 307(19 86) . [9] ... Moghadam, and T. L. Alford, Thin Solid Films 262 , 154(1995). [10] 1998 Annual Book of ASTM Standards, edited by R. A. Storer (ASTM, Philadelphia), Vol. 6. 01, 3 56( 1998). [11] G. R. Moore, and D. ... Wang, T. L. Alford, and J. W. Mayer, J. Appl. Phys. 90(11), 5591(2001). [15] T. L. Alford, D. Adams, T. Laursen, and B. M. Ullrich, Appl. Phys. Lett. 68 , 3251(19 96) . [ 16] Y. Zeng, Y. L. Zou,...
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Engineering Materials and Processes phần 7 ppsx

Engineering Materials and Processes phần 7 ppsx

... samples were tested for both test configurations (samples A, B, C, and D for bare Ag patterns, and samples A′, B′, C′, and D′ for and NH3-annealed Ag patterns). The average of four failure times ... Silver Electromigration Resistance 79 For all tested Ag lines, which were encapsulated by TiN(O), no partial depletion area and no significant number of voids and hillocks were observed even after ... (400 70 0°C). No reaction between Al and N from NH3 ambient to form AlN was detected in this temperature range. For the same sample configuration, a thicker oxide layer was formed at 70 0°C...
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Engineering Materials and Processes phần 8 pdf

Engineering Materials and Processes phần 8 pdf

... than 15 minutes [8] Diffusion coefficient D (10–21 m2/s) of Al oxide Temperature (°C) Ag(200 nm)/Al(20 nm) Ag(200 nm)/Al(30 nm) 400 0.25 0 .80 500 5. 78 1.59 600 6. 18 3.06 Figure ... factors such as Al thickness and trapping of Al in the silver on the transport kinetics and subsequent formation of the surface oxide. The curves in Figure 6.8a and b show the transport ratio ... Figure 6 .8. Transport ratio of Al atoms through the Ag layers annealed at different temperatures, (a) Al(20 nm)/Ag(200 nm) and (b) Al (30 nm)/Ag(200 nm) [8] 0 20406 080 1001200.00.10.20.30.40.5 8 M(t)M(...
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Engineering Materials and Processes phần 9 ppsx

Engineering Materials and Processes phần 9 ppsx

... Appl. Phys. Lett. 68, 3251( 199 6). [4] Y. Wang, T. L. Alford, Appl. Phys. Lett. 74, 52( 199 9). [5] Y. Wang, T. L. Alford, J. W. Mayer, J. Appl. Phys. 86, 5407( 199 9). [6] D. Adams, B. A. Julies, ... S. Lau, F. Deng, T. Laursen and B. M. Ullrich, J. Appl. Phys. 81, 7773( 199 7). [ 19] B. A. Julies, D. Knoesen, R. Pretorius, D. Adams, Thin Solid Films 347, 201( 199 9). [20] M. M. Mitan, H. C. ... Thin Solid Films, 308/3 09, 448( 199 7). [2] Y. L. Zou, T. L. Alford, J. W. Mayer, F. Deng, S. S. Lau, T. Laursen, A. I. Amli, B. M. Ullrich, J. Appl. Phys. 82, 3321( 199 7). [3] T. L. Alford,...
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Engineering Materials and Processes phần 10 pptx

Engineering Materials and Processes phần 10 pptx

... (e.g. grain size and texture); (2) contamination control (C, O and CI); (3) oxidation and corrosion control; (4) prevention of Ag diffusion in metals and dielectric materials; and (5) mechanical ... electromigration [17] Ho and Huntington [11], Patil and Huntington [12] reported that Ag migrates toward the anode for the temperature range 670–877°C. Klotsman et al. [13] and Breitling and Hummel [14] ... D. Hensen, T. L. Alford, Mater. Lett. 45, 157(2000). [17] D. Adams, T. L. Alford, Materials Science and Engineering R 40, 207(2003). Index Adhesion analysis, 54 tape...
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