... 123 524 , (June 20 05) 123 524 1- 12
Xing, C. & Avrutin, E. A. (20 05). Multimode spectra and active mode locking potential of
quantum dot lasers. J. Appl. Phys., Vol. 97, No. 104301, (April 20 05) ... dry etching, the Q factor reached up to
20 ,000 while the linewidth approached 0.4 Å (M. Kim et al., 20 04). Although we did not
Advances in Optical and Photonic Devic...
...
Advances in Optical
and Photonic Devices
Advances in Optical and Photonic Devices
8
Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots
within InP matrix ... of this book, Advances in Optical and Photonic Devices, encompasses a broad
range of theory and applications which are of interest for diverse classes o...
...
16, Jul. 20 09, 26 48 -26 53
Advances in Optical and Photonic Devices
20 8
asymmetric X-junction coupler (Izutsu et al., 19 82; Burns & Milton, 1975; Burns & Milton,
1980), and time ... 1996, 22 0–
22 3
Slight, T. J.; Ironside, C. N.; Stanley, C. R.; Hopkinson, M. & Farmer, C. D. (20 06). Integration
of a resonant tunneling diode and an optical comm...
... creating the electron hole pair due to photon absorption in semiconductor
materials.
Time
p-region
n-region
p
hoton
S
p
ace
E
electron
hole
Advances in Optical and Photonic Devices
25 2 ... drop on the quenching resistor and
accordantly of the voltage applied to the pn-junction. The process quenching is started when
Advances in Optical and Photonic Devic...
... In
Advances in Optical and Photonic Devices
344
magnitude a typical SERF bandwidth of several Hz. Because the bandwidth and the signal
amplitude are inversely related in the AM, the bandwidth ... by 1 in a transition to the excited state induced by
Advances in Optical and Photonic Devices
330
integration into microfabricated packages. Such packages...
... 18um, I=15uA
PQR emission
LED emission
25 A/cm
2
50A/cm
2
100A/cm
2
25A/cm
2
50A/cm
2
100A/cm
2
12- petals, I
th
=28 uA
11A/cm
2
T=100%
25 A/cm
2
50A/cm
2
100A/cm
2
T=1.0% T=1.0% T=1.0%
T=1.0% T=1.0% ... reflection bandwidth profile with wavelength for a number of different slots
at a particular slot spacing and gain conditions.
Advances in Optical and Pho...
... stripes is 25 0μm.
Advances in Optical and Photonic Devices
60
2. Fabrication of the integrated devices
The semiconductor active waveguide optical isolators in the integrated devices are based ... rates. Optical injection-locking is proposed as a solution to these
problems. It enhances the intrinsic component bandwidth and reduces frequency chirp
considerably...
... carrier, photon and phase variations can be described as follows:
(16)
(17)
(18)
By putting
(19)
(20 )
(21 )
We have:
(22 )
(23 )
(24 )
The gain, as defined in (3), contains both the ... defined as:
(25 )
(26 )
Differentiating equation (5) with respect to N, S and
φ
therefore results in the following set
of three equations:
(27 )
(28 )
(29...
... diameter of 20 μm and is
therefore distinctly multimode. Since optical injection-locking favours single-mode
operation by eliminating longitudinal modes and since the modes generated in VCSELs ... detuning regime proposes flat, highly damped S
21
curves. An
increase in injected optical power, while remaining keeping the VCSELs in negative
detuning configuration, results...
... order intermodulation products
of two signals at f1 and f2 occur at f1+f2, f2-f1, 2 f1 and 2 f2. The third order intermodulation
products of two signals at f1 and f2 would be at 2 f1+f2, 2 f1-f2, ... f1 +2 f2, and 2 f2-·f1. Among
these products, signals at f1+f2, 2 f1-f2 and 2 f2-·f1 are not filtered out. Therefore, to obtain
high purity signal among many signals, signals...