Advances in optical and photonic devices Part 1 pot
Advances in optical and photonic devices Part 1 pot
... Advances in Optical and Photonic Devices Advances in Optical and Photonic Devices 8 Fig. 4. (a) PL spectra at 77 K with varying optical pumping level taken from InAs Qdots within InP matrix ... spectra in Fig. 5 are broadened with increasing optical excitation densities. Furthermore, an increase in integrated PL intensity after intermixing Advances in Optical and Photonic Devices ... (Morioka et al., 19 93) for nonlinear spectroscopy, microscopy, and laser biomedicine. Advances in Optical and Photonic Devices Edited by Ki Young Kim Intech Broadband Emission in Quantum-Dash...
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Advances in optical and photonic devices Part 2 pot
... H. S. & Ooi, B. S. (2006). Group-III intermixing in InAs/InGaAlAs quantum dots -in- well. Appl. Phys. Lett., Vol. 88, No. 11 111 0, (March 2006) 11 111 0 1- 3 Wei, J. H. & Chan, K. S. (2005). ... ultrabroad quantum dash interband laser. Appl. Phys. Lett., Vol. 93, No. 11 110 1, (September 2008) 11 110 1 1- 3 Tan, C. L.; Djie, H. S.; Wang, Y.; Dimas, C. E.; Hongpinyo, V.; Ding, Y. H. & Ooi, ... Advances in Optical and Photonic Devices 26 845 846 847 848 849 850m 15 m 13 m 11 m9m7m5m3m 1 m0 θ = 10 o θ = 15 oSpectral Intensity (a.u)φ = 20 μmI =2.5 mAT = 18 oCWavelength...
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Advances in optical and photonic devices Part 11 potx
... 2Q 1 sVRRTD400800 12 00 16 000 15 00 15 20 15 40 15 80 16 0 015 60Wavelength (nm)Transmission (a.u.)QQ23Vs 1 VsVs23VIV =0V >VV <Vvpssss(a)(b) -11 0 -10 5 -10 0-95-90-85-80-75-70-65-60-550.0 ... in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode. Appl. Phys.Letts, Vol. 75, No. 22, Nov. 19 99, 3443–3445 Advances in Optical and Photonic Devices 200 ... A. & Yariv, A. (19 91) . Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser. Appl. Phys. Lett. Vol. 58, No. 2, Jan. 19 91, 11 0 -11 2 Huang, C. Y.; Morris,...
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Advances in optical and photonic devices Part 14 potx
... the 10 0% detection efficiency of photons. Equivalent noise charge (e) 10 00050002000 10 00 10 0500200 10 .10 . 01 10 10 0Shaping time (μs) 1/ f noiseCurrent noiseVoltage noiseTotalTotalIncreasing ... value of intrinsic gain of level 10 6 or more in semiconductor structures is not trivial task in development of silicon photomultipliers. For remaining, the principle of internal gain of multiplication ... semiconductor conference in 19 95 (Saveliev, 19 95). Advances in Optical and Photonic Devices 250 And the first concept of Silicon Photomultiplier was proposed fine silicon structure of avalanche...
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Advances in optical and photonic devices Part 18 pot
... by 1 in a transition to the excited state induced by Advances in Optical and Photonic Devices 330 integration into microfabricated packages. Such packages will be not only inexpensive and ... SDKσσ=, where SEσ and SDσare spin-exchange and spin-destruction cross sections. Potassium has 14 1. 8 10 SEσ−=×cm2 and 18 11 0SDσ−=×cm2, so the maximum light-narrowing factor is max37K ... hops and have low intensity noise. However, one problem exists that these lasers need additional cooling below freezing point for reaching the D1 line wavelength of K, 770 nm. In Advances in Optical...
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Advances in optical and photonic devices Part 3 pptx
... emission25A/cm250A/cm2 10 0A/cm225A/cm250A/cm2 10 0A/cm2 12 -petals, Ith=28uA 11 A/cm2T =10 0%25A/cm250A/cm2 10 0A/cm2T =1. 0% T =1. 0% T =1. 0%T =1. 0% T =1. 0% T =1. 0%T =1. 0% T =1. 0% T=0.63%Circle 18 um, I =15 uAPQR ... involved in addition to the ‘soft lasing turn-on’ behavior (Kim et al., 2009). 25A/cm250A/cm2 10 0A/cm2T =1. 0% T =1. 0% T =1. 0%T =1. 0% T =1. 0% T =1. 0%T =1. 0% T =1. 0% T=0.63%Circle 18 um, I =15 uAPQR ... sectiont4t3t2t 1 n2n3n2n 1 n 1 r4r3r 1 r2Front section Slot Back sectiont4t3t2t 1 Advances in Optical and Photonic Devices 40 modulators and detectors (Coldren 2000; Ward, Robbins...
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Advances in optical and photonic devices Part 4 doc
... "Laser and detector using integrated reflector for photonic integration." Electronics Letters 44 (17 ): 10 17 -10 19. Fessant, T. and Y. Boucher (19 98). "Additional modal selectivity induced ... (w = 1. 6μm), the optical confinement factor in the Fe thin film at one of the waveguide sidewalls is 0 .16 %, and the optical confinement factor of 0 .16 % brings the optical isolation of 14 .7dB/mm ... rates. Optical injection-locking is proposed as a solution to these problems. It enhances the intrinsic component bandwidth and reduces frequency chirp considerably. Advances in Optical and Photonic...
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Advances in optical and photonic devices Part 5 doc
... using H+ ion implantation, it served to localize the current injection without having to etch a mesa. Advances in Optical and Photonic Devices 88 injection-locked laser diodes in 19 83 [16 ], ... of an optically injection-locked VCSEL with constant injected power and variable positive frequency detuning. The detuning is varied from 10 GHz to 11 0 GHz. On the other hand, optically injection-locked ... equation: (11 )The dependence of equation (11 ) on αH can be elaborated by using the linear combination property for sinuses and cosines. Using this property we can write that: (12 )This...
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Advances in optical and photonic devices Part 6 doc
... Transmission Using Tandem-Contact Single Quantum Well GaAlAs Lasers,” in Optoelectronic Signal Processing for Phased-Array Antennas II, vol. 12 17, no. 1, 19 90, pp. 2–5. Advances in Optical and Photonic ... diameter of 20μm and is therefore distinctly multimode. Since optical injection-locking favours single-mode operation by eliminating longitudinal modes and since the modes generated in VCSELs are ... detuning regime proposes flat, highly damped S 21 curves. An increase in injected optical power, while remaining keeping the VCSELs in negative detuning configuration, results in the increase...
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Advances in optical and photonic devices Part 10 pptx
... Vol.22, pp .10 55 -10 58. 0246 810 12-80-70-60-50-40-30f1=400MHz, f2=450.25MHz, Rload=50Ωf1+f2IDC =1. 0mA, OMI=0.7IMD2 [dBc]Reverse Bias[V] Advances in Optical and Photonic Devices 17 2 K. ... Tech.,Vol. 15 No. 4, pp.636~6 41 Advances in Optical and Photonic Devices 18 8 The InGaAlAs RTD-OW schematic wafer structure for operation at 15 50 nm is shown in Fig. 14 , with wafer Γ-valley and ... (Chuang, 19 95)(Figueiredo, 2000). 1 Structures incorporating InGaAsP are usually grown by MOCVD (Bohrer et al., 19 93). Advances in Optical and Photonic Devices 17 0 frequencies of f1, f2,...
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