... with points.
The dimensions of the microstrip line (Fig. 3) are given by: d =3. 17·10
-3
m, w =3. 0 43 10
-3
m,
l
1
=l
2
=5·10
-3
m, t =3 10
-6
m. The permittivity of the microstrip line substrate ... Guides and misguides by theory. Physics, 3, 53.
Žutić, I.; Fabian, J.& Das Sarma, S. Spintronics: Fundamentals and applications. (2004). Rev.
Mod. Phys., 76, pp. 32 3...
... Solidi, 2 03( 14), 34 24 -34 37
Sun, Y. & Xia, Y. (2002). Shape-Controlled Synthesis of Gold and Silver Nanoparticles.
Science, 298, 2176–9
Properties and Applications of Silicon Carbide3 44
Properties ... Mechanical properties of SiC ceramics by ultrasonic
nondestructive technique and its bioactivity. Materials Chemistry and Physics, 106,
33 0 33 7
Pr...
... samples densities for different
silicon and carbon precursors and they presented a maximum density of 1.86 g /cm
3
.
Properties and Applications of Silicon Carbide3 62
SiC polytypes are differentiated ...
(Barrett et al, 19 93) .
The band gap of Si, GaAs and of 6H-SiC are about to 1.1 eV, 1.4 eV and 2.86 respectively.
We found a compilation of properties...
... mechanical properties of aluminium -silicon carbide
composites, Acta Materiala, 49, pp: 32 43- 32 53.
Properties and Applications of Silicon Carbide3 86
Mulla M. A., Krstic V. D., (1994), Mechanical properties ... on enhancing the mechanical properties of aluminium -silicon carbide
composites, Acta Materiala, 49, pp: 32 43- 32 53.
Properties and Applicati...
...
(4-4
'
) 3. 89 4.08 X
C
-2: 0.146
3 x
29
Si
ID1-2:
3 x
29
Si
E15-2:
3 x
29
Si
(1-1
'
) 0 .39 0 .34 X
C
-3: 0.5 43
12 x
13
C +8 x
29
Si
ID1 -3:
12 x
13
C
E15(
) -3:
5-11 x
13
C
+ 3 ...
(4-4
'
) 3. 89 4.08 X
C
-2: 0.146
3 x
29
Si
ID1-2:
3 x
29
Si
E15-2:
3 x
29
Si
(1-1
'
) 0 .39 0 .34 X
C
-3: 0.5 43
12 x
13
C +8 x
29
Si...
... enhanced
diffusion of implanted boron in 4H -silicon carbide. Applied Physics Letters, Vol. 76,
No. 11, (March 20 03) 1 434 -1 436 , 00 03- 6951
Properties and Applications of Silicon Carbide2 4
value ...
Properties and Applications of Silicon Carbide3 4
constant, and T is absolute temperature. As expressed in eqs. (10) and (11), both the fluxes of
(B...
...
-45
0.74
1. 63
0.45
1 .39
Mn -18 2.09 1 .39
Fe 33 1.92 0.42
Co 0 0. 03 0. 03
Ni 0 0.02 0.02
Table 1. Properties of TM-doped 3C-SiC: total energy differences between ferromagnetic and
nonmagnetic ...
scale for easy comparison of the energies in
the nonmagnetic and magnetic states.
Properties and Applications of Silicon Carbide8 4
3. 5 Oxygen Partial Press...
... 0 .3
THz
1. 53 1.50 1 .30 33 .4 10.2
(estimated at
0 .3 THz)
10.40
Desi
g
ned
at 0.5
THz
2.75 3. 00 2.42 16.60 3. 66
(estimated at
0.5 THz)
3. 86
Desi
g
ned
at 0.7
THz
7.4 12.0 6.7 3. 8 ... 12.(a) TEM micrograph of sample without Ge.
Fig. 12.(b) TEM micrographs of samples with Ge and without Ge.
Properties and Applications of Silicon Carbide1 6...
... absence of NiSi phase, however, is probably due to the insufficient annealing
Properties and Applications of Ceramic Composites Containing Silicon Carbide Whiskers 197
Properties and Applications of ... function of temperature T
(kJ/mol Ni)
Ni+
1
3
SiC→
1
3
Ni
3
C+
1
3
Si
30 .7 93 + 0.0018·T·logT - 0.01 03 T
Ni+2SiC→NiSi
2
+2C 22.990 + 0.0108·T·logT - 0.0...