... Opinion in Solid State & Materials Science, Vol.9, pp. 20 2 -21 0, ISSN 1359- 028 6 Silicon Carbide – Materials, Processing and Applications in Electronic Devices 144 one, so it is mainly ... 00 .2 0.40.60.811 .2 00.511. 52 pressure (MPa)saturationSiC 320 /HgSiC 320 /AlSiC 320 /Al12Si Fig. 12. Drainage curves of SiC 320 infiltrated with Hg, Al and Al- 12% Si at 750ºC 00 .2 0.40.60.811 .2 024 6810 12 pressure ... following equation. 22 21 /2 222 1 /2 222 1 /2 (,,) /( 4 )(,,) /( 4 )(,,) 2 /( 4 )xyznxyz byrb rnxyz bxrb rnxyz r b rππππ=+=− +=+ (6) Where r=(x 2 +y 2 )1 /2 . For the numerical...