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Silicon quantum wires arrays synthesized by chemical vapor deposition and its micro structural properties

Silicon quantum wires arrays synthesized by chemical vapor deposition and its micro structural properties

Silicon quantum wires arrays synthesized by chemical vapor deposition and its micro structural properties

... Silicon quantum- wires arrays synthesized by chemical vapor deposition and its micro- structural properties M. Lua, M.K. Lia, L.B. Konga, X.Y. ... 2003AbstractWell-aligned arrays of silicon nanowires (SiNWs) have been synthesized by a chemical vapor deposition (CVD)template method without catalyst. The micro- structures of the SiNWs were studied by high-resolution ... orientation and size of the grown nanostructure. To date, sil-icon nanowires (SiNWs) have been successfully synthesized by different methods, such as laserablation, thermal evaporation and lithography[2–8]....
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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... been made to prepare silicon nanowires(SiNWs) by different methods, such as laser ablation[6,7], thermal evaporation deposition [8], chemical vapor deposition (CVD) [9–11], and supercritical fluid–liquid–solid ... tures and properties. Since silicon has long been the dominantmaterial in semiconductor and microelectronics indus-tries, thus the study of synthesis and properties ofnanostructured silicon ... structures were synthesized by chemical vapor deposition of SiH4gas at 450 °C.Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of silicon nanowires (SiNWs).Transmission...
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Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

... Deposition of carbon nanotubes on Si nanowires by chemical vapor deposition Y.F. Zhang, Y.H. Tang, Y. Zhang, C.S. Lee, I. Bello, ... and Department of Physics & Mater. Sci., City University of Hong Kong,83 Tat Chee Avenue, Kowloon, Hong Kong, ChinaReceived 19 July 2000Abstract By using a hot ®lament chemical vapor deposition ... nanoscalematerials to synthesize a composite of CNTs and SiNWs in transversal. Here, we report the syn-thesis of this composite material by a hot ®lament chemical vapor deposition (HFCVD) method.The results...
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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... 153–157Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. YangÃDepartment of Physics and Quantum- Functional Semiconductor ... nucleation and morphological evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. ... Si-NWs. The Si-NWs are grown by exposing the substrates with Au–Si islands to a mixture of gasses SiH4 and H2. The growth temperatures and the pressures are 500–600 1C and 0.1–1.0 Torr, respectively....
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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

... 2008PACS:71.35.Ee78.55.Ae78.67.ÀnKeywords:Nanowires Silicon PhotoluminescenceExcitonElectron-hole-plasmaabstractWe have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by the chemical vapor deposition ... Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition O. Demichela,Ã, F. Oehlera, V. Calvoa,P.Noe´a, ... copper-catalyzed vapor liquid–solid mechanism. Thenanowires have a typical diameter of 200 nm. Spectrum of the as-grown SiNWs exhibits radiative statesbelow the energy bandgap and a small contribut...
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Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition pot

Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition pot

... non-doped ZnO film and a nitrogen doped one aredeposited by plasma-assisted metal-organic che-mical vapor deposition (MOCVD). We haveinvestigated their structural and optical qualities and found that ... accepted 5 March 2001Communicated by M. SchieberAbstractNitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray ... electrolumi-nescence devices and solar cells. Recently, opti-cally pumped ultraviolet (UV) lasing of ZnO film by molecular beam epitaxy (MBE) and pulsedlaser deposition has been reported by severalauthors...
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Self aligned silicon quantum wires on ag(1 1 0)

Self aligned silicon quantum wires on ag(1 1 0)

... 4. Angle-resolved photoemission valence band spectra and dispersion relations of the deep lying quantum levels (QWa and QWb) from the silicon nanowires. (a) a series of spectra atdifferent ... direct-current heated pieceof silicon wafer (flashed at $1250 °C), controllingthe evaporation flux with a quartz monitor and the deposition at room temperature (RT) by Augerelectron spectroscopy. ... (misorientation 0.1°) was prepared by standard, repeated cycles of Ar+ bombard-ments and annealing.As imaged in scanning tunnelling microscopy(STM) at RT in Fig. 1(a), thin silicon NWs,reaching up...
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structure of alumina nanowires synthesized by chemical etching

structure of alumina nanowires synthesized by chemical etching

... points surrounded by the byproducts of the reactionbetween alumina and NaOH, and (d) core-shell structured ANWs.Fig. 7. XPS spectra of ANWs. The ANWs were synthesized by the chemical etching ... inner and outer oxide layer. Fig. 7 showsthe XPS spectra of the ANWs, which were synthesized by the chemical etching of the AAM in dilute NaOH and H3PO4solutions. The Al, O, Na, P, C, and ... structure of alumina nanowires (ANWs) synthesized by the chemical etching of an anodic alumina membrane (AAM).The AAM was prepared by the two-step anodization method followed by the lift-off process....
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Tài liệu Metal Organic Chemical Vapor Deposition: Technology and Equipment docx

Tài liệu Metal Organic Chemical Vapor Deposition: Technology and Equipment docx

... luminescence efficiency, and/ or abrupt interfaces. In4Metal Organic Chemical Vapor Deposition: Technology and EquipmentJohn L. Zilko170 Thin-Film Deposition Processes and TechnologiesThere ... 7.98–1678/T(Cont’d.)166 Thin-Film Deposition Processes and TechnologiesTable 2. (Cont’d.) Chemical Abbrev- Formula Melt- Vapor Useiation ing pressureTemp (P in Torr,(°C) T in °K) Silicon Silicon SiCl4-70tetrachlorideTetra ... all of the condensed liquid phase evaporates and thesource can no longer support its own vapor pressure. The source will thenbe completely in the vapor phase, and the cylinder pressure will begin...
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Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx

Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx

... with a metal organic chemical vapor deposition (MOCVD)-grown undoped zincoxide (ZnO) film as a channel layer and plasma-enhanced chemical vapor deposition (PECVD)-grown silicon nitride as a ... molecular beam epitaxy,2)sputtering,3–10)pulsedlaser deposition, 11–15)atomic layer deposition, 16–21) and metal organic chemical vapor deposition (MOCVD).22–24)In principle, MOCVD offers the ... the fabrication and characteristicsof ZnO TFTs that employ an MOCVD- grown ZnOfilm as the active channel layer and plasma-enhanced chemical vapor deposition (PECVD)-prepared silicon nitrideas...
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