Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles

... Polymer- assisted synthesis of aligned amorphous silicon nanowires and their core/ shell structures with Au nanoparticles Xing-bin Yana,b, Tao Xua, ... analytic results of the morphology and microstructure conﬁrmedthe orientation and the amorphous nature of the SiNWs, and the high dispersion of Au nanoparticles on the surface of the SiNWswithout any ... surface of the SiNWs. Because of the high standard electrode potential of the Au 3+ /Au 0couple, Au 3+has high polarization and highchemical reactivity. Au 3+could be easily reduced to Au 0in...

Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism

... 2000AbstractHighly oriented amorphous silicon nanowires (a-SiNWs ) were grown on Si (1 1 1). The length and diameter of orientedSiNWs are almost uniform, which are 1 m and 25 nm, respectively. ... that growth of the a-SiNWs was controlled by a solid–liquid–solid mechanism(SLS). This synthesis method is simple and controllable. It may be useful in large-scale synthesis of various nanowires. ? ... Yu).detail by Wagner and co-workers [4,5]. Givargizovdeveloped the growth model and discussed it withina kinetics framework [6]. Yazawa [7] and Westwater[8], and Ozaki [9] produced SiNWs with VLS growthinduced...

Phonon assisted tunneling process in amorphous silicon nanostructures and gaas nanowires

... the value of 12 meV. An advantage of this modelover that of Irrera et al. used model is the possibility of describing the behavior of I–V data measured at both high and low temperatures with the ... amor-phous silicon nanostructures and GaAs nanowires recentlypublished in Refs. [1,9].2. Theory and a comparison with experimental dataIf the current is dominated by the process of chargecarriers ... Physica E 40 (2008) 2859–2861Phonon -assisted tunneling process in amorphous silicon nanostructures and GaAs nanowires P. OhlckersÃ, P. PipinysVestfold University College,...

facile synthesis of porous a - fe2o3 nanorods and their application in ethanol sensors

... ethanol vapor with concentrations of 50, 100, 200, 500, and 1000 ppm. The sensingproperties of R-Fe2O3 nanoparticles with an average particlesize of about 30 nm and a surface area of 18.31 m2/g, ... the size of Figure 3. (a, b) TEM and HRTEM images of R-FeOOH nanorods.(c, d) TEM and HRTEM images of porous R-Fe2O3nanorods. (e) Thecorresponding ED pattern and (f) HRTEM image of a single ... gas-sensing properties of the porous R-Fe2O3nanorods were com-pared with those of R-Fe2O3 nanoparticles. 2. Experimental Section. All chemicals were of reagentgrade and used without further...

Carbon assisted synthesis of silicon nanowires

... Carbon -assisted synthesis of silicon nanowires Gautam Gundiah, F.L. Deepak, A. Govindaraj, C.N.R. Rao*Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry,Jawaharlal ... 2003AbstractCarbon -assisted synthesis of silicon nanowires has been accomplished with silicon powders as well as solid sub-strates. The method involves heating an intimate mixture of silicon powder and activated ... XRDpattern of the product, given in Fig. 2b, is char-acteristic of cubic silicon with a small impurity of silica.Reaction of silicon powder with activated car-bon in the absence of H2, by...

Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

... 2000AbstractŽ. Amorphous silicon nanowires a-SiNW with an average diameter of ca. 20 nm were synthesized at about 9508C under anŽ.ArrH atmosphere on a large area of a 111 Si substrate without supplying ... made nanowires were exposed toair, because the growth process was controlled undera reduction atmosphere with a mixture of argon and hydrogen. The nanowires grew directly on the sub-strate without ... consists of nanoparticles of a fewFig. 2. Schematic depiction of SiNW growth by the SLS mecha-Ž. Ž .nism: a deposition of a thin layer of Ni on the Si 111 substrate;Ž. Ž.b formation of the...

Growth of amorphous silicon nanowires

... deposited with AuPd alloy as catalyst for 1 min. (a) Low-mag-ni®cation images of silicon nanowires. (b) and (c) A magni®ed view of (a). (d) Top view of the vertically aligned silicon nanowires. Z.Q. ... characterize the structures of silicon nanowires. 3. Results and discussio nFig. 1a±d shows the SEM images of the silicon nanowires grown on a substrate, which was de-posited with AuPd alloy as ... grown silicon nanowires are of an amorphous state and some of nanowires appear to bifurcate in the vertically growth process. Theeect of H2gas etchings on the catalytic size and the eect of...

Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method

... quantities of SiNWs with various crystal phases weresynthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing ... optoelectronic and electrochemical devices with low-dimensional structures. In recentyears, silicon nanowires (SiNWs) as one-dimensional structure haveattracted due to their unique mechanical and semiconductingproperties. ... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogenradical -assisted deposition methodMinsung Jeon⁎, Hisashi Uchiyama, Koichi KamisakoDepartment of Electronic and Information...

Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation

... properties at room temper-ature, because of its indirect band gap of $1.1 eV and a small exciton binding energy ($15 eV). Incontrast, silicon nanowires (SiNWs) of a few na-nometers in diameter ... [10±13] and ther-mal evaporation [14±17] are two methods nor-mally used for the synthesis of SiNWs. The keypoint in these two methods is the formation of asucient amount of silicon atoms and/ or ... analysis of the growthmechanism of semi-conductor nanowires, Lee et al.[18] proposed an oxide -assisted model by whichthe SiNWs were formed in two steps. Firstly, amorphous nanoparticles of SiO...

Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

... 999–1002the silicon top-layer, even for ultra-thin silicon layers(thickness as low as 5–20 nm), and allows to obtaina very sharp interface silicon layer=buried oxide. Theelectrical conductance of silicon ... characterization of silicon nanowires made from ultrathin silicon- on-insulator (SOI) using a lithog-raphy process based on an atomic force microscope (AFM). SOI wafers were ÿrst thinned, prepatterned and ... 85.40.UxKeywords: AFM; Lithography; Silicon- on-insulator; Silicon nanostructures1. IntroductionSince the feasibility demonstration of oxide maskgeneration on a silicon wafer by a scanning tunnelingmicroscope...

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