the work presented in this section of chapter 5 has been published chumnarnsilpa et al 2009 the abstract of the publication is enclosed in the appendices
... solution-based methods such as spin-coating and inkjet printing To date, the complete list of materials that have been incorporated in OLEDs is too large to provide inthissectionThe following highlights ... temperature by making use of radial basis function network methods Finally, Chapter draws the conclusions by discussing achievements and limitations ofthe research presentedinthe thesis Some suggestions ... processes by spin-coating has also been built as comparison with the inkjet printing device In order to obtain an understanding ofthe formation of different thin film surface morphology, Chapter characterizes...
... microwave frequency of 2 450 MHz is 8 75 gauss The magnetic field inthe plasma chamber was analysed by using the 2D Poisson software To start the simulations, the initial parameters ofthe solenoid coils ... components The use of electromagnet has wide flexibility of tuning the plasma to get the best operating conditions The use of electromagnet (instead of permanent magnets) helps one to investigate the ... jacket (electromagnet) for shielding the fringing magnetic field and to reduce the power consumption The use of jacket is to provide a return path for the magnetic field lines and thereby shield the...
... similar values of η Although the values of VOC are similar, the value of JSC for the film annealed at 350 °C is greater than that for annealing at 450 °C owing to larger surface area ofthe former ... annealing directly at 450 °C, the ATO film suffered severe cracking that resulted inthe film becoming easily peeled from the Ti-foil substrate, as demonstrated inthe inset of Figure 1a The inset ... concentration of I2 increases the concentration of triiodide anions so increasing the hole transport mobility, but this effect is balanced in a back-illuminated device by the attenuation ofthe incident...
... developed the conceptual framework and supervised thework All authors read and approved the final manuscript Competing interests The authors declare that they have no competing interests References ... graphene isthe most suitable material for application as a counter electrode in DSSCs among them Based on this finding, inthe future, we intend to conduct further studies for improving the performance ... range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface As shown inthe figure, the resistances...
... developed the conceptual framework and supervised thework All authors read and approved the final manuscript Competing interests The authors declare that they have no competing interests References ... graphene isthe most suitable material for application as a counter electrode in DSSCs among them Based on this finding, inthe future, we intend to conduct further studies for improving the performance ... range is related to the interface between the electrolyte and the counter electrode, whereas the second circle is related to the TiO2/electrolyte interface As shown inthe figure, the resistances...
... tip since the sidewall ofthe silicon pillar is pared by etchant Finally, the PR is consumed completely after 10min etching time, and a pyramid-like tip is then formed The appearance ofthe pyramid-like ... protect the underlying silicon (Figure 2a) The etching depth of silicon is increased upon etching time, while the PR is also gradually etched away; the exposed silicon is then increased and etched ... ion etching techniques The apex ofthe nanotip can reach to nm in radius The mechanism of nanotip formation is that the remained photoresist on top ofthe tip is gradually consumed during the etching...
... that this thesis is my original work and it hasbeen written by me in its entirety I have duly acknowledged all the sources of information which have been used inthe thesis This thesis has also ... cells shall be investigated within this thesis To maintain or even improve the a-Si:H(i)/c-Si interface quality upon the additional deposition ofthe doped silicon films, the optimisation ofthe ... potential candidates to meet this need, and are investigated inthis thesis To study any degradation ofthe underlying intrinsic buffer layer after the deposition ofthe doped silicon films, the...
... seen from the zoomed -in image ofthe left side ofthe gate, the sidewall of TaN gate is normal to the surface of AlGaN barrier layer, indicating the anisotropy ofthe gate etch process 54 Fig ... the AlGaN barrier layer is assumed to be relaxed, since the thickness ofthe GaN layer is usually several micrometers, whereas the thickness ofthe AlGaN barrier layer isinthe order of tens of ... with increasing doping level For the lateral AlGaN/GaN HEMTs during the off-state, it is assumed that the electric field inthe depletion region under the gate is a combination of a vertical polarization...
... cleaved single mode fiber is shown together To obtain the intrinsic characteristics ofthe Ge JFET, the contribution of source-drain current ofthe un-illuminated part ofthe channel in ID calculation ... foundation of next-generation central-processing-unit (CPU) 1.6 Thesis Organization The organization ofthe thesis is divided inthe following chapters InChapter 2, the recent progresses inthe development ... wavelength of 155 0 nm for the first time In addition, the device shows a temporal response time of 110 ps with rise time of 10 ps, indicating that the scalable Ge JFET photodetector is promising candidate...
... 4.8 The SEM images ofthe outer skin ofthe inner layer (PES) of dual-layer hollow fibers spun with an air gap of 1 .5 cm (A: spinneret 25oC, coagulant 25oC; B: spinneret 25oC, coagulant 5oC) ... ofthe cross -section morphology of dual-layer hollow fibers spun with an air gap of 1.5cm (A: spinneret 25oC, coagulant 25oC; B: spinneret 25oC, coagulant 5oC; C: spinneret 60°C, coagulant 25 C; ... profiles along the radial length within the spinneret; (b) Schematic ofthe particle distribution inthe cross -section ofthe single layer hollow fiber………………… ….129 Fig 6.2 Particle distribution profiles...
... spectra of a µm droplet and the background film Inthis work, the background film refers to the droplet-free film region The Raman spectrum ofthe virgin Si(100) target is also shown for reference The ... crystallinity as the target It is also observed that the Raman peak is redshifted for some droplets but identical with that of Si target for other droplets On the other hand, the Raman spectrum of ... while the width of Raman spectrum is correlated with the size distribution of NCs However, a quantitative analysis is difficult since the influence ofthe amorphous phase and the stresses in the...
... Figure 3 .5: CyV sweep (from (i) to (iv)) of a thin film of PKEu on a platinum disk electrode in acetonitrile with 0.1 M of n-Bu4NPF6 as the supporting electrolyte The inset isthe CyV, sweep inthe ... (up to GPa) [59 ] The characteristic switching is associated with the intrinsic negative resistance effect ofthe organic CT crystals [60] This phenomenon 23 Chapter 1: Introduction is therefore ... components in memory and/or logic circuits inthe future C Xanthene Derivatives Xanthene isthe basis of a class of dyes, including Rose Bengal (RB), fluorescein, Eosins and rhodamines Among them, RB has...
... surface and all the currents must be carried by these majority spins This kind of materials is called half metals The term of half metal was proposed by de Groot etal on the basis of electronic ... isthe possibility of applying it into practical spintronic devices? 16 Chapter Introduction and literature survey 1 .5 Organization ofthis thesis The outline ofthe thesis is as following: Chapter ... As the spin-down electrons are inthe localized state, the electron transport is dominant by the thermal assisted hopping Fe3O4 (magnetite) belongs to this kind of half metals (4) Both spin-up...
... instability, and phase separation occurs spontaneously For a ternary system, the binodal line and the spinodal line meet at the critical point The location of critical point determines whether the polymer-rich ... though the channel inside spinneret However, there hasbeen no report on the effects of conical spinneret on ultra-filtration hollow fiber spinning Since inthe channel of conical spinneret, the ... polymer-lean phase The location ofthe critical point determined whether the polymer-rich phase and the polymer-lean phase forms a new phase At a certain stage during phase demixing, the polymer-rich phase...
... because the metal hasbeen laid to a depth way pass the AlGaN/GaN interface where the 2DEG is located Hence, the region of contact between the metal and the channel is at the sides ofthe metal (see ... tunneling from the metal to the semiconductor is possible Inthe absence of a good match between the metal and the semiconductor work functions, which is generally the case, thisisthe best approach ... 18nm from the surface This depth hasbeen chosen because it is where the n-doped AlGaN layer isIn addition, it is closer to the AlGaN/GaN interface, where the 2DEG is located Finally, the etched...
... injection of spins, the transport ofthe spin information in non-magnetic metals and the detection ofthe resulting spin will be investigated using the lateral spin valve structure Various lateral spin ... for an understanding ofthe lateral spin valve, was presentedinthischapter Subsequently, the theory behind how a spin signal is obtained using the non-local and the local spin valve probe configuration ... generally called the vertical spin valve 1.2 What is lateral spin valve? Inthe lateral spin valve structure, the ferromagnetic structures are laid out laterally instead of being stacked as in the...
... by the diffusive scattering of cracks formed during sample drying, since the size ofthe optical probe we used was several millimeters in diameter This scattering effect is also expected to increase ... manipulation If the dielectric constants ofthe materials inthe crystals are different enough, and the absorption of light by the material is minimal, then the scattering at the interfaces can ... the crystal, d isthe lattice spacing, θ isthe angle between the incident ray and the lattice planes, and the integer m isthe order ofthe diffraction If the dielectric contrast between the spheres...
... Organization of Thesis The outline ofthe thesis is as follows Inchapter 1, the background and the objectives of thesis will be stated The summary of theories for various MR effect and Planar Hall Effect ... review of related workis also presented 2.1 Magnetoresistance Effect (MR) Magnetoresistance isthe change in electrical resistance of a material due to the presence of a magnetic field [1] Generally ... dimensions is given in Table 3.4 Devices A1 B1 C1 A2 B2 C2 A3 B3 C3 Length (µm) 50 50 50 50 50 50 50 50 50 Length (µm) 5555 3 .5 10 15 20 30 40 50 Width (µm) Table 3.4 Dimensions for the planar hall...
... selfaligned, and this might affect the ease of integrating nanoscale lateral TFETs 11 1.4 Objective of research and outline ofthe thesis This thesis is aimed at the study of TFET characteristics ... the same amount of lithography misalignment The misalignment ofthe drain side masking step leads to a part ofthe drain region being exposed inthe device with short LG Thisis expected to lead ... Vox The potential drop across the gate dielectric of a MOS transistor Lov Tunneling junction to gate edge misalignment of a tunneling FET xiii Chapter Introduction 1.1 MOSFET scaling inthe semiconductor...