... memories Appl Phys Lett 2007, 90:22 350 4 doi:10.11 86/ 155 6- 276X -6- 177 Cite this article as: Sahu et al.: Effect of ion implantation energy for the synthesisof Ge nanocrystals in SiN films with HfO2/SiO2 ... in support of the quqntumconfinement mechanism Phys Rev B 19 95, 51 :1 65 8 Okamoto S, Kanemitsu Y: Photoluminescence properties of surfaceoxidized Ge nanocrystals; Surface localization of excitons ... 2011, 6: 177 http://www.nanoscalereslett.com/content /6/ 1/177 Page of well-isolated Ge-NCs with an average size of 3 .5 nm were self-assembled within the top Si3N4 layer at a distance of5.6 nm from...
... (Wiley, New York, 1 9 56 ) 31 A.P Lambros, D Geraleas, N.A Economou, J Phys Chem Solids 35, 53 7 (1974) 32 A.P Alivisatos, J Phys Chem 100, 132 26 (19 96) 33 L Brus, J Phys Chem 90, 255 5 (19 86) ... were dried under vacuum (0.32 g, 40%) For the synthesisof SnS NCs, the mixture of 0. 16 g Sn(Et2Dtc)2, ml oleic acid and ml of oleylamine contained in a 50 ml three neck flask (1) was degassed and ... (170 °C or 2 05 °C) solution of ml of degassed oleylamine and 0.2 g of tetradecylphosphonic acid (TDPA) After the temperature decreased to about 150 °C, resulting from the injection of the precursor,...
... (Wiley, New York, 1 9 56 ) 31 A.P Lambros, D Geraleas, N.A Economou, J Phys Chem Solids 35, 53 7 (1974) 32 A.P Alivisatos, J Phys Chem 100, 132 26 (19 96) 33 L Brus, J Phys Chem 90, 255 5 (19 86) ... were dried under vacuum (0.32 g, 40%) For the synthesisof SnS NCs, the mixture of 0. 16 g Sn(Et2Dtc)2, ml oleic acid and ml of oleylamine contained in a 50 ml three neck flask (1) was degassed and ... (170 °C or 2 05 °C) solution of ml of degassed oleylamine and 0.2 g of tetradecylphosphonic acid (TDPA) After the temperature decreased to about 150 °C, resulting from the injection of the precursor,...
... shape-controlled synthesis, ” Journal of Physical Chemistry B, vol 110, no 32, pp 1 56 66 – 1 56 75, 20 06 [ 26] J Y Song and B S Kim, “Rapid biological synthesisofsilver nanoparticles using plant leaf ... pp 23 46 2 353 , 20 05 [ 35] D W Hatchett and H S White, “Electrochemistry of sulfur adlayers on the low-index faces of silver, ” Journal of Physical Chemistry, vol 100, no 23, pp 9 854 –9 859 , 19 96 Journal ... innoxiousness of nanosize silver colloids on textile fabrics,” Textile Research Journal, vol 75, no 7, pp 55 1 55 6, 20 05 R W Y Sun, R Chen, N P Y Chung, C M Ho, C L S Lin, and C M Che, Silver nanoparticles...
... 1.12 10.79 Pd 1.12 0 .58 19.03 EDX ICP-MS XPS Au 96. 61 92.93 58 .93 Ag 1 .50 5. 97 18.47 Pd 1.89 1.10 22 .60 EDX ICP-MS XPS Au 99.19 97 . 56 74.71 Ag 0.24 1.94 10. 35 Pd 0 .57 0 .50 14.94 Atomic % Atomic ... images of the Au nanocrystals obtained from reactions with molar ratio of Au:Pd:Ag = 15: 1:1 .6 Most of particles (> 95% ) exhibit well-defined facets with average longest edge length of ~1 95 nm, ... concentration ofsilver ions Figure 3 .5 shows the morphology of the Au bipyramids obtained at a ratio of Au:Pd:Ag = 15: 1:8 with a reaction temperature of 120 °C (same as for the case of 25 Au prisms)...
... pp 58 6 -58 8, 2000 [5] M I Alonso and K Winer, “Raman spectra of c-Si1-xGex alloys”, Phys Rev B, vol 39, pp 10 0 56 -10 062 , 1989 [6] E Bassous, H N Yu, and V Maniscalco, “Topology of Silicon Structures ... Phys Rev B, vol 51 , pp 1 65 8 - 167 0, 19 95 [3] K H Heinig, B Schmidt, A Markwitz, R Grӧtzschel, M Strobel, and S Oswald, “Precipitation, ripening and chemical effects during annealing of Ge+ implanted ... threshold of 800°C is necessary for the synthesisof Ge nanocrystals in the silicon oxide matrix The pile up of Ge nanocrystal near the Si/silicon oxide interface and the void region of Ge nanocrystal...
... morphology of the SbBiS3 is shown in Fig 3c It can be seen that similar to the Sb1.6Bi0.4S3, the SbBiS3 products also consist of a large number of flower-like 123 366 Nanoscale Res Lett (2010) 5: 364 – 369 ... numbers of nanorods, which grow radially from the central core and have a length of lm and a diameter of about 100 nm Nanoscale Res Lett (2010) 5: 364 – 369 Fig TEM, HRTEM, and SAED images of the ... Kanatzidis, Chem Mater 9, 1 65 5 (1997) R.S Mane, B.R Sankapal, C.D Lokhande, Mater Chem Phys 60 , 1 96 (1999) Y Yu, R.H Wang, Q Chen, L.M Peng, J Phys Chem B 109, 23312 (20 05) 369 B Roy, B.R Chakraborty,...
... diffusion-controlled synthesisof spherical NCs, the burst of Fig a Absorption, b PL spectra, and c relative kinetics of CdS NCs prepared at various temperatures at a constant residence time of 68 s (OA: 15 vol ... Taking the residence time of 68 s as an example, tuning the volume percentage of OA from 10 .5 to 51 .2% led to a significant increase in the mean diameter of the NCs from 3.8 to 5. 3 nm, accompanied by ... (HWHM*11 nm) CdS NCs can be obtained with a high volume ratio of OA of 51 .2%, and the size of the CdS NCs were in the range of 4 .5 5. 3 nm in the microreaction The efficient mixing and heat transfer,...
... Yield 1. 15 g ( 75% ) Elemental analysis (%), experimental (calculated): Zn, 22.89 (21.11); S, 43.04 (41.40); C, 23. 15 (23. 26) ; H, 3.10 (3.90) Preparation of CdS/ZnS nanocrystals (1) Synthesisof nm ... a mixture constituted of 0.13 25 mmol of Zn(ex)2, dissolved in 1.3 g of dioctylamine (DOA), and 0.4 mmol of zinc stearate in ml of octadecene was added within 45 by means of a syringe pump Aliquots ... to the nanocrystals surface and complete in this way the ligand shell consisting of 123 64 Nanoscale Res Lett (20 06) 1 :62 67 Fig Thermogravimetric analysis of Zn(ex)2 Fig EDX analysis of the...
... C29H24O5 452 .5 OH O 3 26 Appendix O O O OBn 5- 12 C29H24O5 452 .5 O FT-IR Data 327 O O O 5- 13 C44H32O8 68 8.7 O O O O O 328 Appendix OTs 5- 18 C20H17IO6S2 54 4.4 TsO I FT-IR Data 329 TsO OTs OBn 5- 19 C53H44O13S4 ... 752 .7 O OH O 5- 2 C18H14O3 278.3 O 322 Appendix I OH 5- 8 C8H7IO2 262 .0 O FT-IR Data 323 I OTs 5- 9 C15H13IO4S 4 16. 2 O 324 Appendix O OTs 5- 10 C43H36O9S2 760 .9 OBn OTs O FT-IR Data 3 25 O OH OBn 5- 11 ... C19H14O5 322.3 O OMe FT-IR Data 331 HO O O 5- 23 C17H10O5 294.3 O OH 332 Appendix TsO OTs 3 - 56 C30H34O7S2Si 59 8.8 O TES FT-IR Data 333 HO OH 3 -57 C16H22O3Si 290.4 O TES 334 Appendix HO O 3- 35 C16H22O3Si...
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... infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 / Si0.75Ge0. 25 using various H2 pressures”, J Appl Phys., vol 93, pp 9988-99 96, 2003 [5] A V Kobolov., H Oyanagi, ... in support of the quantum-confinement mechanism,” Phys Rev B, vol 51 , pp 1 65 8 - 167 0, 19 95 [7] J M Blaser, C Caragianis-Broadridge, B L Walden and D C Paine, “A study of the effect of oxide structure ... nucleation of the Ge nanocrystals due to its high values of diffusivity in silica ( ~5. 6 10 5 cm2s−1) for the temperature range concerned [9] whereas for Si, even at 1000°C, the diffusivity of Si in...
... minutes shown in Figure 5. 2 Figure 5. 6: (a) Secondary ion mass spectrometry (SIMS) profiles of assputtered and annealed (800°C for 15 and 60 minutes) Samples B, (b) SIMS profiles of as-sputtered and ... still ~11 .5 at.% of Ge in the HfAlO matrix From the results of Sample B, a Ge concentration of ~10 .5 at.% would be sufficient for the formation ofnanocrystals when annealed at 800°C for 15 minutes ... pp 50 7 950 81, 2004 [6] X B Lu, P F Lee, and J Y Dai, Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics”, Appl Phys Lett., vol 86, pp 203111-203113, 2005...