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21/06/2014, 05:20
... http://www.nanoscalereslett.com/content/6/1/189 Page of Si: as-deposited Si: 350 C, hour Si: 350 C, hours 18 H conct [at%] 15 12 Ge: as-deposited Ge: 350 C, hour Ge: 350 C, hours 0,9 0,6 0,3 0,0 0,0 0,2 ... crystallization of silicon-germanium films Thin Solid Films 2005, 487:67 Abo Ghazala MS: Composition and electronic properties of a-SiGe:H alloys produced from ultrathin layers of a -Si: H/a -Ge: H Physica B ... 293:132 Frigeri C, Nasi L, Serényi M, Csik A, Erdélyi Z, Beke DL: AFM and TEM study of hydrogenated sputtered Si/ Ge multilayers Superlatt Microstruct 2009, 45:475 Frigeri AC, Serényi M, Csik A, Erdélyi...