planarization gap fill of dielectric films
Efficiency of gap-fill exercises to 10th form students’ vocabulary acquisition = Hiệu quả của bài tập điền khuyết đối với sự tiếp thụ từ vựng của học sinh lớp 1
Ngày tải lên :
28/03/2015, 10:18
... discussion of one type of vocabulary exercises – the fill- in-the-blank or gap- fill exercise type Gap- fill exercises are commonly used, but Sciarone and Meijer (1995) found in their study that gap- fill ... assumption behind the application of gap- fill exercises is that as students become aware of the efficiency of gap- fill exercises, they can gradually build up their habit of doing vocabulary exercises ... between gap- fill exercises and vocabulary -4- acquisition Chapter two describes the context of the study, rationale of using a Quasiexperimental method, variables, participants, design of gap- fill...
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20 bài reading (gap fill)
Ngày tải lên :
02/06/2013, 01:25
... (34) _ more of your time (35) _ on water that on roads or railways We sometimes forget that for every mile of land (36) _ four miles of water There’s so much water in the surface of our earth ... word SEAS (38) _ those parts of water surface which (39) _ only few hundreds of mile, the word OCEANS to describe the huge area of water (40) _ are thousands of miles wide and very deep 31 ... McCarty, a washerwoman, (44) a great deal of money She made a (45) of $150,000 - a large portion of her life savings - to the University of Southern Mississippi to help needy students...
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gap fill 6
Ngày tải lên :
19/06/2013, 01:26
... left library have science books and reference books And those shelves at the come back of the library have lots of history, geography, literature books 10 most ... works at home He has a word processor in his bedroom and he writes stories _the evening, _ of his sons cooks a meal After dinner they look in the newspaper to see what is on TV they talk ... _ at about midnight Sentence building ( Basic level ) Use the cues to complete each sentence of the letter OR Rearrange words in each sentence in accordance with a correct order : they / not...
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The Materials Science of Thin Films 2010 pptx
Ngày tải lên :
05/03/2014, 17:20
... The Materials Science of Thin Films I I I The Materials Science of Milton Ohring Stevens Institute of Technology Department of Materials Science and Engineering Hoboken, ... 10 Electrical and Magnetic Properties of Thin Films 451 10.1 Introduction to Electrical Properties of Thin Films 451 Conduction in Metal Films 455 ... many years of experience teaching and advising graduate students at Stevens Institute of Technology, Professor Ohring has been the coordinator of an on-premises, M.S degree program offered by...
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Direct growth of amorphous silica nanowires by solid state transformation of sio2 films
Ngày tải lên :
16/03/2014, 15:04
... formation of a titanium oxide (TiOx ) phase by removal of oxygen from the silica layer [9] The reduction of TiN seems to be a critical factor in the growth kinetics of a-SiONWs The growth of silica ... decomposition of TiN films The Ni islands act as a nucleation site for the a-SiONW growth, and expedite the reduction of TiN by supplying extra hydrogen by thermal decomposition of Fig FESEM photographs of ... further characterization of the nanowires Surface analysis of the substrates was carried out by Auger electron spectroscopy (AES, Perkin–Elmer PHI 660) at an acceleration voltage of keV The substrates...
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A molecule detector adsorbate induced conductance gap change of ultra thin silicon nanowire
Ngày tải lên :
16/03/2014, 15:32
... width of the conductance gap clearly changes with the difference of the adsorbates We observe wide gaps in the G–V curves when the applied bias is very low or zero, which is due to the energy gap ... transport thus defines the conductance gap of the device The conductance gap changes with the difference of the adsorbates The adsorbates control the conductance gap as the third terminal in FET In ... to the Fermi levels of the electrodes Typically, the Fermi level is positioned in the LUMO–HOMO gap of the molecule because if the HOMO or LUMO is close to the Fermi level of an electrode, electrons...
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gas sensing characteristics and porosity control of nanostructured films
Ngày tải lên :
19/03/2014, 16:48
... respectively Results and discussion 3.1 Characterization of nanotubular TiO2 films Fig shows SEM images of the surface of TiO2 thick films composed of TiO2 nanotubes prepared by the hydrothermal treatment ... with that of a film composed of commercial TiO2 nanoparticles (P-25) The surfaces of the films were observed before and after calcination at 600 ◦ C It is obvious that the morphology of the films ... formation of tubular TiO2 of m and 50 nm in length and diameter, respectively, as shown in Fig 1(c) and (d) With increasing the temperature of the hydrothermal treatment, the length of the tubes...
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measurement of in plane thermal conductivity of ultrathin films using micro raman spectroscopy
Ngày tải lên :
06/05/2014, 08:54
... conductivity for dielectric solids Our work demonstrates that the micro-Raman method is capable of measuring in-plane thermal conductivity of thin-film structures In addition, a careful selection of the ... of Crystallite Size, Journal of Applied Crystallography, Vol 11, pp 102–113, 1978 26 A.A Ramadan, A.M El-Shabiny, and N.Z El-Sayed, Size-Dependent Structural Characteristics of Thin Bismuth Films, ... Thin Bismuth Films, Thin Solid Films, Vol 209, pp 32–37, 1992 27 I Stark, M Stordeur, and F Syrowatka, Thermal Conductivity of Thin Amorphous Alumina Films, Thin Solid Films, Vol 226, pp 185–190,...
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simulation of microscale densification during femtosecond laser processing of dielectric materials
Ngày tải lên :
06/05/2014, 08:54
... change of the index of refraction of the glass ACKNOWLEDGEMENTS Support of this work by the National Science Foundation (DMI-9908176) is gratefully acknowledged REFERENCES FIGURE Diameter of densification ... the change of the index of refraction is confined in a region of µm when the laser pulse is absorbed in a 2-µm spot This indicates that a 3.46-µm laser beam can produce a change of index of refraction ... compressive strain indicates densification of the glass, and the area of compressive strain is smaller than the laser spot size, µm The change of the index of refraction is calculated using (3) and...
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transient heating and melting transformations in argon ion laser irradiation of polysilicon films
Ngày tải lên :
06/05/2014, 08:55
... slope of the reflectivity signal with time is expected, due to the finite size of the probing laser beam, but the observed oscillatory trend of the reflectivity signal is a new finding Samples of ... nonhomogeneous periodic nature of the melting process Recent work*’ includes the detailed experimental investigation of radiative properties of thin semiconductor films at high temperatures IV ... susceptor of in diam- eter, heated by a computer-controlled induction heating coil The temperature of the stage is measured by a Pt30%Rh/Pt-6%Rh (B-type) thermocouple The uniformity of the sample...
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simulation of microscale densification during femtosecond laser processing of dielectric materials
Ngày tải lên :
06/05/2014, 08:58
... change of the index of refraction of the glass ACKNOWLEDGEMENTS Support of this work by the National Science Foundation (DMI-9908176) is gratefully acknowledged REFERENCES FIGURE Diameter of densification ... the change of the index of refraction is confined in a region of µm when the laser pulse is absorbed in a 2-µm spot This indicates that a 3.46-µm laser beam can produce a change of index of refraction ... compressive strain indicates densification of the glass, and the area of compressive strain is smaller than the laser spot size, µm The change of the index of refraction is calculated using (3) and...
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transient heating and melting transformations in argon ion laser irradiation of polysilicon films
Ngày tải lên :
06/05/2014, 08:58
... slope of the reflectivity signal with time is expected, due to the finite size of the probing laser beam, but the observed oscillatory trend of the reflectivity signal is a new finding Samples of ... nonhomogeneous periodic nature of the melting process Recent work*’ includes the detailed experimental investigation of radiative properties of thin semiconductor films at high temperatures IV ... susceptor of in diam- eter, heated by a computer-controlled induction heating coil The temperature of the stage is measured by a Pt30%Rh/Pt-6%Rh (B-type) thermocouple The uniformity of the sample...
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Báo cáo hóa học: " Fluorescence Quenching of Alpha-Fetoprotein by Gold Nanoparticles: Effect of Dielectric Shell on Non-Radiative Decay" ppt
Ngày tải lên :
21/06/2014, 17:20
... coated by a dielectric shell The thickness and dielectric constant of the shell are controlled by the concentration of AFP and gold colloid content In order to find the effect of the dielectric ... existence of the dielectric shell may slow down the decreasing speed of the absorption cross-section and then reduces the quantum efficiency, as shown in Fig 6b Therefore, the existence of dielectric ... 15 nm and dielectric function e1, the dielectric shell has a thickness r2 - r1 and dielectric constant e2 (when e2 = 2.0, the gold particle is coated by a shell; when e2 = e3 = 1.0, no dielectric...
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Báo cáo hóa học: " Effect of Composition on Electrical and Optical Properties of Thin Films of Amorphous GaxSe1002x Nanorods" pptx
Ngày tải lên :
21/06/2014, 17:20
... diameter of the nanorods varies from 140 to 180 nm, and the length is of several hundreds of nanometers Figure presents the temperature dependence of the dc conductivity of thin films of a- GaxSe100-x ... system, the value of pre-exponential factor (r0) is of the order of 101 X-1 cm-1 On the basis of this value of r0, it is suggested that the conduction is taking place in the band tails of localized ... energy (hm) of thin films of a-GaxSe100-x nanorods solids The presence of high concentration of localized states in the band structure is responsible for the decrease in optical band gap on increasing...
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Báo cáo hóa học: " First-Principles Study of the Band Gap Structure of OxygenPassivated Silicon Nanonets" potx
Ngày tải lên :
22/06/2014, 01:20
... and the sizes of the primitive cell of the silicon nanonets, Bj indicates the bore diameters of the nanopore, Wk is the minimal widths of the nanowall, Pn means the porosities of the silicon ... results of 100X and 100D Si–O–Si passivated nanonets The pore wall width is the key factor in deciding the band gap of the nanonets With the decreases of the pore wall width, the band gap increases ... result in a direct band gap (Fig 3b) The value of the band gap is also reduced due to the Si–O–Si passivation 123 412 Nanoscale Res Lett (2009) 4:409–413 Fig Band gap structure of a 100D5B5W2P37H...
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The Materials Science of Thin Films potx
Ngày tải lên :
27/06/2014, 06:20
... The Materials Science of Thin Films I I I The Materials Science of Milton Ohring Stevens Institute of Technology Department of Materials Science and Engineering Hoboken, ... 10 Electrical and Magnetic Properties of Thin Films 451 10.1 Introduction to Electrical Properties of Thin Films 451 Conduction in Metal Films 455 ... many years of experience teaching and advising graduate students at Stevens Institute of Technology, Professor Ohring has been the coordinator of an on-premises, M.S degree program offered by...
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