... make a fantastical Rube Goldberg–style cat-feeding machine! hide a litter box 236 88 construct a thumb piano ×3 Snip large bobby pins in half Place four halves on block Lay one half across top ... it in place Staple down crosswise pin Slide screw beneath keys Staple screw in place Play with thumbs 91 92 face the world as a flapper be a swell ’40s bombshell Lengthen and darken brows with...
... and beyond We build our capacity for change by working together OBJECTIVE Staff are skilled and enthusiastic in helping customers with technology STRATEGIES • Implement a training model to increase...
... family/household-specific and individual-specific determinants depends on the business cycle at birth, and thus on economic conditions early in life From this we can infer whether the fate of an individual ... age-periodcohort identification problem In fact, we mostly take a log-linear function in τ − t Note that we can thus subsume z into x and β2 into β1 (or, in shorthand, β) In the absence of unobserved heterogeneity, ... conditions, and the secular effects as captured by the birth year The Partial Likelihood approach thus tackles at least part of the unconditional dependence of 16 within-pair lifetimes, which was...
... women The 2006 seminar on homophobia, hate crimes and discrimination against black lesbians was thus one of a number of 2006 events that transformed the public ‘face’ of what was meant by violence ... democratisation in 1994, the definition of citizenship has altered radically for South Africans – thus the claiming of citizenship (through claims to rights, resources, identities) emerges in a ... including the marginalisation of sex workers Gender norms tend to impact heavily on the dynamics, and thus the connection between sexuality and citizenship at this level becomes one of discrimination...
... sector and property-related services have shrunk markedly and will not fully recover any time soon Thus, laid-off workers have to search employment in sectors they are ill prepared to work in Above ... have risen worryingly for Ireland (due to higher burdens of the Irish banking crisis) and Portugal Thus, a renewed intensification of the crisis of confidence in the euro area is a significant downward...
... voltage, typically 2-5 volts The InP window layer is transparent to 1.3μm – 1.55μm wavelengths, thus InGaAs/InP photodiodes not have slow tail impulse response associated with the slow diffusion ... voltage, typically 2-5 volts The InP window layer is transparent to 1.3μm – 1.55μm wavelengths, thus InGaAs/InP photodiodes not have slow tail impulse response associated with the slow diffusion...
... case, we have depleted n-region Thus, the current-voltage characteristic of the structure is changed to a linear one The degree of depletion of the n-region and thus its resistivity in this case ... had sufficient internal gain in the prebreakdown region, but decreased high-frequency performance Thus, in most multibarrier photodiode structures are inconsistent the high-frequency performance ... in the m1-p-n-m2-structure the metalsemiconductor barriers restrict the flow of these carriers Thus, in a three-barrier reachthrough-structures the current density through the structure after...
... on for a fixed amount of time to raise (or lower) the voltage level on a charge storage device; thus, the amount of charge remaining (or charge that was removed) is proportional to the light intensity...
... one spherical convex surface to collect and focus the light Thus, as photons pass through the microlens and through the CFA filter, thus passing only wavelengths of red, green, or blue color and ... incident photon The spectral response curve is a plot of responsivity as a function of wavelength Thus, to optimize a silicon photodiode structure for detecting blue wavelengths, the depletion region ... 1) [72] The external quantum efficiency is also a function of wavelength of the incident light Thus in a CMOS photodiode, one can strategically chose the depth of the location of the depletion...
... under the sidewall spacer indicate charge pocket because higher voltage is needed to pinch off Thus, the integrated charge can’t be fully transported in without loss under sidewall spacer overlap ... profiles are similar for type A and type B FD, suggesting that the impurity profiles are also similar Thus, the integrated charge can be transported in both types without loss under sidewall overlap ... of the comparator (Vcmp) determines PR = and hence the state in the flip-flop to go high (Q = 1) Thus, as a result of the comparison, the state Q = indicates Vfd Vref while the state Q = indicates...
... ionisation events; thus having longer current buildup times compared to currents developed by shorter chains This buildup time, which is stochastic, has an associated bandwidth limit and thus governs ... region in which a large electric field exists Most of the incident is absorbed inside i-region thus the drift component of the photocurrent dominates over the slow diffusion component that can ... and in here we are going to learn about them: Bandwidth Gain Noise Sensitivity BER As a rule of thumb the amount of BW required for the amplifiers in the receiver side should be 70 percent of...
... temperature however it would be plausible to place R1 and C1 in the cryostat chamber with the APD, thus obtaining a noise advantage at lower temperatures A laser is often used to excite electro-optical ... shallow depth into silicon which is originally high purity p-type, sometimes called π-type silicon Thus the layer at the surface is highly doped n-type, often referred as n+ type with an high concentration ... to the extinction coefficient, k, by the following formula: πk α = λ where λ is the wavelength Thus, defining the complex index of refraction as ñ= n – ik, the imaginary component k is related...
... 29) εgeom is defined as the ratio of sensitive to insensitive area, namely the fill factor, and thus depends on the design and layout of the pixels only It is about 0.3 for a 25 μm pitch sample ... at x either the electron or the hole initiates an avalanche is given by Ptrigger =Pe + Ph -PePh Thus, we can write: ( ) PDE =ε geom − e−αx (1 − R) ( Pe + Ph − Pe Ph ) In case of a photo-generation ... the highfield region (n+), the electron is directly collected at the n+ terminal (see Figure 31); thus, it does not contribute to the triggering The hole is forced to pass the whole high-field triggering...
... conversion demands a large nonlinearity of the nonlinear media together with a strong pump field Thus, periodically poled lithium niobate (PPLN) is usually employed in the single-photon frequency ... fluorescence by the second harmonic of the strong pump was not phase matched at this working temperature, thus the noise from that process could also be ignored Thanks to sufficient suppression of the intrinsic ... avalanche diodes (SPADs) for 1.5 μm photon counting applications J Mod Opt Vol.54, pp 283–304 Bethune, D S & Risk, W P (2000) An autocompensating fiber-optic quantum cryptography system based...
... values obtained with our measurements, we found unreasonable PDE values (higher than expected) Thus, the sole alternative we had was using the G values given by the manufacturers Despite a sort ... to discriminate from extra-generated pulses, i.e afterpulses and optical cross-talk pulses, and thus two questions rise: Can we include in each PDE value an amount of pulses that is considered ... the tested devices we found that the afterpulse probability is not appreciable after ≈100ns and thus we settled the output logic signal duration from the discriminator longer than this value We...
... would prevent high sensitivity imaging, even for the highest (Geiger-mode) gain regime of operation Thus, for all but the most demanding imaging applications, monolithic sapphire microlenses are not ... “Fast Single-Photon Imager acquires 1024 pixels at 100 kframes/s,” Proc of SPIE Vol 7249, 72490U Imthurn, G.P., Garcia, G.A., Walker, H.W & Forbes, L (1992) “Bonded silicon-on-sapphire wafers and ... tube, coupling to the sample holder, that is properly connected to a water cooling system, and thus to the diamond substrate on which the homoepitaxial deposition process takes place The position...
... positive voltage, while the dark current increases by about two orders of magnitude Remarkably, thus, the best signal-todark current (SDR) ratio (see Fig.7 (b)) is obtained at zero bias voltage, ... acceptor levels can increase the recombination probability of photogenerated electron-hole pairs and thus reduce the responsivity of GaN ultraviolet photodetectors (Zhao et al., 2006d) Therefore, normally ... GaN, and lead to a decrease in the minority carrier diffusion length (Zhao et al., 2006e) It is thus proposed that the photo-generated holes can be trapped by the Ga vacancies The n--GaN layer...
... energy and spatial resolution), because the approach still depends on the same scintillators and thus involves a multistep process for converting radiation to signal: using scintillators to convert ... paths (we need thick detectors so that they can stop radiation of very high energy, e.g., 4.4 MeV) Thus, charge transport is a critical factor in the realization of detectors for high-energy radiation ... working with porous silicon is that the crystalline structure of the silicon remains intact, and thus the charge transport characteristics of the silicon remain relatively unaffected In addition...