oxides semiconductors and crystals

electrochemistry of semiconductors and electronics 1992 - mchardy

Ngày tải lên : 16/04/2014, 11:20

... of semiconductors and electronics : processes and devices / edited by John McHardy and Frank Ludwig p cm Includes bibliographical references and index ISBN 0-8155-1301-1 Semiconductors Design and ... Herring, and Lee P Hunt HANDBOOK OF POLYMER COATINGS FOR ELECTRONICS: by James J Licari and Laura A Hughes HANDBOOK OF SPUTTER DEPOSITION TECHNOLOGY: by Kiyotaka Wasa and Shigeru Hayakawa HANDBOOK ... synthesis and deposition of elemental materials such as AI, Si and a wide variety of binary and ternary compounds such as borides, carbides, silicides, phosphides, arsenides, and sulfides, and the semiconductors...

375
594
0

einstein relation in compound semiconductors and their nanostructures, 2009, p.471

Ngày tải lên : 04/06/2014, 14:44

... expressions for n0 and DMR for semiconductors whose energy band structures are 14 The Einstein Relation in Bulk Specimens of Compound Semiconductors deﬁned by the two-band model of Kane and that of ... the three-band model of Kane using the energy band constants as Eg = 0.095 eV, m∗ = m∗ + m∗ / ⊥ || and ∆ = ∆|| + ∆⊥ / The curves (d) and (e) correspond to the two-band model of Kane and that of ... materials The s-like conduction band is singly degenerate and the p-like valence bands are triply degenerate The latter splits into three subbands because of the spin–orbit and the crystal ﬁeld interactions...

471
291
0

Báo cáo hóa học: " New Applications of Electrochemically Produced Porous Semiconductors and Nanowire Arrays" pdf

Ngày tải lên : 21/06/2014, 17:20

... macropores into n-type and p-type Si is by now an established technique that allows to produce highly ordered arrays of macropores with diameters in the range between 200 nm and 10 lm, and as deep as ... a Li reference electrode and a standard glass ﬁber separator As an electrolyte, 0.5 ml of LP-30 (Merck) has been used, which essentially consists of dimethylcarbonate and ethylencarbonate (1:1) ... signiﬁcantly reducing the etching time and thus production costs Conclusion It has been demonstrated that optimized Si nanowire anodes can be produced by cheap and reliable standard techniques The resulting...

5
300
0

SEMICONDUCTORS AND SEMIMETALS pot

Ngày tải lên : 28/06/2014, 22:20

... SEMICONDUCTORS AND SEMIMETALS VOLUME 21 Hydrogenated Amorphous Sijkon Part D Device Applications Semiconductors and Semimetals A Treatise Edited by R K ... a-Si:H by rf and dc glow discharges, sputtering, ion-cluster beam, CVD, and homo-CVD techniques is discussed along with the characteristics of the silane plasma and the resultant atomic and electronic ... employing field effect, capacitance and deep level transient spectroscopy, nuclear and optically detected magnetic resonance, and electron spin resonance Parameters and phenomena considered include...

317
529
0

Room tepmeaterature ferromagnetism in zno based magnetic semiconductors and carbon related systems

Ngày tải lên : 10/09/2015, 15:50

... encouragement and understanding from my parents in China and my wife Liu Xuan in Singapore ii SUMMARY The engineering applications of spintronics devices utilizing both charge and spin properties ... annealing, and after a subsequent air annealing Nmag represents non-magnetic 81 Table 5-1: Table І Resistivity (ρ) and Ms of pure oxide film and of Pt (25 mol%)/oxide films in the 400oC and ... (NCon and NMag stand for nonconductive and nonmagnetic respectively) 122 Table 7-1: Saturation magnetization Ms (in memu/g) of Teflon tape (PTFE), lowdensity polyethylene (LDPE) and...

215
325
0

New materials for organic semiconductors and organic dielectries synthesis, characterization and theoretical studies

Ngày tải lên : 14/09/2015, 08:39

... silver, and copper; dialkyl disufides on gold; alcohols and amines on platinum; and carboxylic acids on aluminum oxide and silver [23, 26, 27] Although there is a wide variety of ligands and substrates ... silicon and gallium arsenide semiconductors, silicon dioxide insulators, and metals such as aluminum and copper have been the backbone of the semiconductor industry However, the increasing demand ... relatively large scale and inexpensive production process; iii) possibility of making composites and blends with other polymer and inorganic materials; iv) tunable mechanical and chemical properties...

157
405
0

Efficient modeling of power and signal integrity for semiconductors and advanced electronic package systems 1

Ngày tải lên : 14/09/2015, 14:12

... cost, size, and performance Markets for the SOP solution include wireless communication, networking, computing, and sensor and storage system applications To integrate these multiple dies and passive ... devices can also affect phase noise and signal to noise ratio (SNR) performance in RF and wireless communication circuits In high-speed and high-density SOPs and PCBs, a major element of the highfrequency ... coupling for a large number of vias and no meshing required), we have chosen the theory in [55] and further enhanced in the modeling efficiency and accuracy of multilayered and Chapter Introduction finite-sized...

59
348
0

Efficient modeling of power and signal integrity for semiconductors and advanced electronic package systems 2

Ngày tải lên : 14/09/2015, 14:12

... power-ground planes, and µ and ε represent the permeability and permittivity of the dielectric sandwiched between the P-G planes The terms Cm and Sm stand for Cm = cos (βm z) and Sm = sin (βm z), ... Port and the S21 between Ports and for both boards are compared with measured data in Figs 3.25 and 3.26, respectively The results are shown good agreement The top and bottom conductor planes and ... (i) and Sm = sin βm (z − zi ) , respectively, where z ∈ [zi, zi + hi ]; and hi is the height (i) (i) (i) (i) of the waveguide Symbols Jmn , Jmn , Hmn and Hmn represent the following Bessel and...

51
495
0

Efficient modeling of power and signal integrity for semiconductors and advanced electronic package systems 3

Ngày tải lên : 14/09/2015, 14:12

... to a ﬁnite one and the numbers of modes are M1, M2, and M3 for PPWG- I, II, and III, respectively For performing the mode matching, we can either test it over [0, h] (or [0, h1 ] and [h1, h]) Here ... Chapter Modeling for Multilayered Power-Ground Planes 99 enforcing Ez and Hz , and those of PPWG-I and II to enforcing Eφ and Hφ By III performing the testing by cos(βp z) on (4.23): h h III ... usage and computing time is presented for the extended SMM algorithm with the FDCL and the Ansoft HFSS simulation The simulation time of our SMM algorithm is much faster than one of the HFSS and...

38
243
0

Efficient modeling of power and signal integrity for semiconductors and advanced electronic package systems 4

Ngày tải lên : 14/09/2015, 14:12

... dz (5.20a) (5.20b) with [Z] = [R] + jω[L] and [Y ] = [G] + jω[C] Since [R], [L], [G] and [C] are symmetric, [Z] and [Y ] are symmetric and [Z] = [Z]t and [Y ] = [Y ]t , where the notation t denotes ... together because [Z][Y ] and [Y ][Z] are full matrices; i.e., each set of voltages and currents, Vi (z) and Ii(z), aﬀects all the other sets of voltages and currents, Vj (z) and Ij (z) A change of ... ×N complex matrices [T V ] and [T I ] deﬁne a change of variables between the actual phasor line voltages currents, V and I, and the mode voltages and currents, V m and I m In order for this...

66
253
0

Stimulated Emission and Optical Gain in Semiconductors

Ngày tải lên : 23/10/2013, 20:15

... etc.) and II–VI compound semiconductors have a band structure similar to that of Fig 3.1 and the direct-transition bandgap On the other hand, for group IV semiconductors such as Si and Ge, and ... orbital and consists of a heavy-hole band, a light-hole band and a split-off band [3] The upper edge of the valence band is at the À point, the center of k space, where the heavy-hole and light-hole ... parabolic band Here, Ec and Ev are energies of the lower edge of the conduction band and the upper edge of the valence band, respectively, the difference Eg ¼ Ec À Ev is the bandgap energy, and mn...

44
280
0

Báo cáo " Calculation of dispersion relation and real atomic vibration of fcc crystals containing dopant atom using effective potential " pot

Ngày tải lên : 14/03/2014, 13:20

... MD, and both they are in the lattice cell n The same distributions for H and D atoms are in the left (n − 2) and in the right (n + 2) lattice cells In this case the moving equations for H and ... the sum i is over the central atom ( i = ) and the correlated one ( i = ), and the sum j is over all their nearest neighbors, excluding the central and the correlated atom The latter contributions ... MD µ µ   which creates the acoustic (ω − ) and optic (ω + ) branches for vibration between H and D atoms At q = we obtain acoustic frequency ω− = and optic frequency ω+ = max which is itself...

8
386
0

Báo cáo " Anharmonic effective potential and XAFS cumulants for hcp crystals containing dopant atom " potx

Ngày tải lên : 14/03/2014, 13:20

... potential, correlated Einstein frequency and temperature, the first, second and third XAFS cumulant of hcp crystals containing dopant atom satisfy all standard properties of these quantities The ... crystals containing dopant atom For weak anharmonicity in XAFS the Morse potential is used expanded to the 3rd order V( x ) = D (e−2αx − 2e−αx ) ≅ D (−1 + α 2x − α3x + for the pure material and ... n (14) ˆ ˆ where we express y in terms of anihilation and creation operators, a and a + , i e., ( ) ˆ ˆ y = a0 a + a + ; a0 = (15) µω E and use harmonic oscillator state n with eigenvalue En...

7
273
0

Báo cáo " Anharmonic effective potential, thermodynamic parameters, and EXAFS of hcp crystals " docx

Ngày tải lên : 14/03/2014, 13:20

... r and r0 being the instantaneous and equilibrium bondlengths between absorbing and backscattering atoms, respectively Veff ( x ) ≈ k0 x + k3 x (3) where k is effective local force constant, and ... dependence of 1st (a) and 2nd (b) cumulants for Zn and Cd compared to experiment at 77 K and 300 K [16] Figure demonstrates the temperature dependence of our calculated 3rd cumulant and thermal expansion ... interatomic interaction, and expanded to the third order around its minimum V ( x) = D e −2αx − 2e −αx ≅ D − + α x − α x + L , (7) where α describes the width of the potential and D is the dissociation...

7
400
1

Synthesis and Application of Nanosize Semiconductors for Photoxidation of Toxic Organic Chemicals pptx

Ngày tải lên : 14/03/2014, 20:20

... in both dispersed and heterogeneous forms (supported) tsnl Advantanges of this Approach•The light absorption and energy levels of the semiconductor valence and conduction bands can be adjusted ... (Unstable) Cd, 5s Conduction Band light - - Energy 1.33 V + + Valence Band Mo, dz S 3p 2.4 V + + S 3p MoS2 CdS Kinetic stability occurs because both valence and conduction bands are localized on the ... pesticides, and polycyclic aromatics using nanosize MoS2 to determine reaction kinetics and final breakdown products •Investigate alternative, highly stable nanocluster catalysts (RuS2, WS2) and compare...

22
961
0

ADSORPTION OF pb AND cd ONTO METAL OXIDES

Ngày tải lên : 15/03/2014, 23:12

... lake bio®lms and lesser but signi®cant roles of Fe oxides and organic material Adsorption of Cd to the lake bio®lms was dominated by Fe oxides, with lesser roles of Mn and Al oxides and organic ... (NH2OHÁHCl) was used to extract easily reducible Mn oxides, sodium dithionite (Na2S2O4) to extract Mn and Fe oxides, and oxalic acid to extract metal oxides and organic material As noted in the Methods ... and Leukoberbelin Blue revealed strong associations between Fe and Mn mineral deposits and organic materials From the present investigation it was not possible to determine if the Fe and Mn oxides...

10
330
0

semiconductors for micro and nanotechnology an introduction for engineers -korvink j. g., greiner a.

Ngày tải lên : 17/03/2014, 14:59

... Semiconductors for Micro and Nanotechnology— An Introduction for Engineers Semiconductors for Micro and Nanotechnology— An Introduction for Engineers Jan G Korvink and Andreas Greiner ... G Korvink and Andreas Greiner, Freiburg im Breisgau, February 2002 14 Semiconductors for Micro and Nanosystem Technology Chapter Introduction Semiconductors have complex properties, and in the ... (2.3) where a , b and c are the non-coplanar lattice vectors and α j , β j and γ j are arbitrary (positive and negative) integers Note that we not Semiconductors for Micro and Nanosystem Technology...

341
561
0

gas - sensing properties of tin oxide doped with metal oxides and carbon

Ngày tải lên : 19/03/2014, 16:48

... temperatures, and we have obtained similar responses to ethanol gas and LPG (not shown here) Therefore, these characterizations are in order to choose right heat-treated temperature for metal oxides- and ... temperature to LPG and ethanol gas are respectively shown in Fig 3a and b It seems that the optimized operating temperatures of the sensor to ethanol gas and LPG are around 350 and 250 ◦ C, respectively ... understand better the selectivity of the hybrid sensor to ethanol gas and LPG Please cite this article in press as: N Van Hieu, et al., Gas-sensing properties of tin oxide doped with metal oxides and...

7
528
0

hydrothermal synthesis and characterization of some polycrystalline iron oxides

Ngày tải lên : 19/03/2014, 16:48

... where x varies between 0.99 and 1.15 A sensible increase (up to 527 kOe) from the standard value of 517 kOe was found for the hyper®ne magnetic ®eld (Hhf ) for all powder oxides except the oxide ... of ultra®ne Fe2O3 and Fe3O4 powders, Mat Res Bull 33 (1998) 841 [7] D Barb, L Diamandescu, D Mihaila-Tarabasanu, A Rusi, Romanian Patent Osim 86 979, 18 December 1984 [8] L Diamandescu, D Mihaila-Tarabasanu, ... densi®cation 691 Results and discussion The X-ray diraction patterns (Seifert equipment, CuKa radiation), electron diraction measurements (JEM-200 CX electronic microscope) and Mossbauer È transmission...

4
468
0

the role of morphology and crystallographic structure of metal oxides

Ngày tải lên : 20/03/2014, 13:11

... materials, it is necessary to expand our understanding of gas sensor mechanism in nanoand polycrystalline oxides For example, it is necessary to establish the role of morphology and crystallographic structure ... transition from spherulites to nanocrystallites and from nanocrystallites to nanocrystals and crystals takes place, is accompanied by the changes in both the size and the external shape of crystallites ... Science and Engineering R 61 (2008) 1–39 Fig 19 Cracking inﬂuence on morphology of In2O3 and gas penetrability of metal oxides (Adapted with permission from Refs [87,134] Copyright 2001 and 2004:...

39
644
0