osepchuk j m the history of the microwave oven a critical review microwave

Study of drop on demand inkjet printing technology with application to organic light emitting diodes

... Summary of the average sessile contact angles and surface energies 75 Table 3.4: Summary of the average advancing contact angles 76 Table 3.5: Summary of the average receding contact angles 76 ... a projected sessile drop use for the measurement of sessile contact angles 70 Figure 3 .7: Software screen view showing the cross-hair that is used to target the sessile drop for measurement and ... 205 PUBLICATIONS 229 APPENDIX A. 1 A Taguchi Design of Experiments in Optimization of Inkjet Printing Drop Ejection Parameters A. 1 VI Summary SUMMARY This thesis aims to further investigate the application...

Design, fabrication, and characterization of a solenoidsystem to generate magnetic ﬁeld for an ECR proton source

Danh mục: Hóa học - Dầu khí

... probe size was 15 mm × mm × mm, with sensitive area mm × 0·5 mm Measurement rate was 10 measurements per second The error associated in the magnetic field measurements was less than 0·5% The electromagnets ... field can cause diffusion of the plasma particles to the wall of the plasma chamber The measured magnetic field profiles along the axial distance for (a) mirror magnetic field, and (b) flat magnetic ... Res A2 98: 13–21 Bhawalkar D D, Bhujle A G, Fatnani P, Hannurkar P R, Joshi S C, Karmarkar M G, Kotaiah S, Mhaskar S P, Pande S A, Prabhu S S, Shinde R S, Shukla S K, Singh G 2003 Indian Spallation...

fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Danh mục: Vật lý

... from the Ti-foil substrate, as demonstrated in the inset of Figure 1a The inset of Figure 1b shows the satisfactory quality of the ATO films of large area from the two-step annealing When the ATO ... coefficient than does N719 so that the JSC of the DSSC made of N3 is larger than that made of N719 However, N719 contains ammonium cations to remedy the TiO2 surface so to obtain a larger VOC than N3 ... corresponding ATO films: the one-step process leads to creaking of the films that easily peeled from the Ti substrate, whereas the two-step process yields films of satisfactory quality and ready to use Figure...

Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

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... carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable material for application as a counter electrode in DSSCs ... substrates Chemically converted graphenes, SWNTs, magnesium nitrate, and ethanol were mixed together in an ultrasonicator for several hours The FTO glass (7 Ω·cm-2) and a stainless steel substrate ... electrode (c) showed the simultaneous presence of graphene wrinkles and SWNTs The optical transmittance of the graphene, SWNT, and carbon composite electrodes was then measured to investigate their potential...

báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Danh mục: Hóa học - Dầu khí

báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Danh mục: Hóa học - Dầu khí

... [6 -7] Various materials are employed to form the nanotips [8-10] Among them, silicon is one of the most promising candidates to fabricate nanotips because it is the most used materials and ease ... curves of the pyramid-like tip and sharpened nanotip Inset of Figure 3a displays the real-time SEM images of the nanotip array during field emission measurement One can see that the tungsten ... layer on the sidewall was completed (Figure 1d) Property analysis of the nanotip Microstructure of the nanotip array was examined using SEM The field emission characteristics were measured at 1E-6...

Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Danh mục: Kỹ thuật - Công nghệ

... efficiency results from various companies and institutes, the working principles, the key loss mechanisms and some of the approaches taken by researchers to address these issues till date Since the doped ... to thank Dr Ma Fajun for sharing his technical expertise and some of his developed simulation programmes using Sentaurus TCAD I am also grateful to Shubham Duttagupta for sharing a lot of the ... thicknesses for both µc-Si:H(n) and ZnO:Al are selected Both experimental results on glass and metal substrates as well as simulation results on a device level demonstrate the feasibility of these...

Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

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... versus gate-to-drain spacing LGD of the fabricated AlGaN/GaN MOS-HEMTs, as compared with those of state -of -the- art AlGaN/GaN MOSHEMTs On-state resistance was extracted using the device active area ... cm-3) GaN (0001) epitaxial layer on sapphire substrates were used as the starting materials The GaN epitaxial layer has a thickness of m and a root-mean-square surface roughness of less than ... Depletion capacitance F Cit Capacitance of interface states F Rit Resistance of interface states Ω Gm Measured conductance S Cm Measured capacitance F Rser Series resistance Ω Cma Measured accumulation...

Fabrication and characterization of germanium photodetectors

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... non-zero external bias MSM photodetectors possess the advantage of low capacitance and relative ease of fabrication The intrinsically low capacitance resulting from its configuration has always been ... materials Germanium, a group IV material the same as Si, avoids the cross contamination issue Though Ge is also an indirect bandgap (Eg = 0.66 eV) material like Si, its direct bandgap of 0.8 eV is ... International technology roadmap of semiconductor I-V Current versus voltage MBE Molecular beam epitaxy MSM Metal-semiconductor-metal MGM Metal-germanium-metal MBE Molecular beam epitaxy OEIC Optoelectronic...

Fabrication and characterization of composite membranes for gas separation

Danh mục: Tổng hợp

... membranes (Takana et al., 1996) These results 12 indicate the necessity of finding a more stable material in scale-up of these separations Membrane technology has shared a large market in separation ... of membrane-based gas separation can be dated back to around 170 year ago when Thomas Graham observed gaseous osmosis for the air/carbon dioxide system through a wet animal bladder (Kesting and ... 1991) The plot has the permeability of the fast gas on the abscissa on a logarithmic scale and the selectivity for the gas pair on the ordinate again on a logarithmic scale The performances of various...

Fabrication and characterization of luminescent silicon nanocrystal films

Danh mục: Tổng hợp

... gases is mainly due to different atomic or molecular mass of ambient gases The mass ratio between Si plasma plume and ambient gas atoms (Ar, He) has a major effect on the plume dynamics in the ... 2 .12 AFM characterization of Si NCs deposited on a graphite (HOPG) substrate in mTorr Ar gas with a laser fluence of 3.0 J/ cm2 (a) AFM image of isolated Si NCs, (b) section analysis of the AFM ... plume expands towards the substrates On the other hand, the arrival of the liquid droplets at the substrates is hampered by the increased collisions and gas pressure Using gated intensified CCDarray...

Fabrication and characterization of memory devices based on organic polymer materials

Danh mục: Tổng hợp

... functions, such as write-once-read-many times (WORM) memory, flash-typed memory, dynamic random access memory (DRAM), static random access memory (SRAM), etc Of all these kinds of memory devices, the ... solid state storage known as random access memory (RAM) and sometimes Chapter 1: Introduction other forms of fast but temporary storage Similarly, “storage” is more commonly referred to mass storage-optical ... capacitors or transistors The Chapter 1: Introduction current mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and...

Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Danh mục: Tổng hợp

... for sample A4 65 FIG 3.3 Raman spectra of samples A1 , A2 , A3 , A4 , A6 and bulk Ge 66 The dotted lines indicate the peak positions of amorphous Ge and GaAs substrate at the position of 275 , 2 67 and ... shows the schematic illustration of the mechanism of the carriermediated ferromagnetism [75 ] When Mn substitutes Ga in the GaAs lattice, it acts as an acceptor, providing holes that mediate a ... phase consists of both spin-glass-like phase and ferromagnetically ordered regions The amorphous samples also exhibited a negative magnetoresistance and an anomalous Hall effect at low temperatures...

Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Danh mục: Tổng hợp

... Qiao, Mr Ruixue Liu, Mr Santoso Yohannes Ervan and Ms Natalia Widjojo for their assistance and generous suggestions; Mdm H J Chiang, Mdm S M Chew and Mr K P Ng from the Department of Chemical and ... between the two phases separated by the membrane The selectivity of NF membranes is based on both the size and charge of solutes Therefore, the transport and separation processes in NF membranes may ... and the separation performance of ultrafiltration membranes are mainly determined by the fabrication conditions Table 1.1 Membrane Separation Processes and Membrane Characteristics Membrane Separation...

Fabrication and characterization of AIGaN gan HEMTs

Danh mục: Tổng hợp

... electrical and dimensional measurements of the TLM device and on the validity of assumptions made in the analysis For example, the resolutions of the dimensional measurements of the width and length of ... electrical and mechanical properties of materials such as GaN, AlN and AlGaN It also introduces the basic device structure of the AlGaN/GaN HEMT and its properties and characteristics such as the ... key material parameters for AlGaAs/GaAs, 4H SiC and AlGaN/GaN transistors [21] Metric AlGaAs/GaAs 4H SiC AlGaN/GaN Energy Bandgap (eV) 1.43 for GaAs 3.2 3.4 for GaN 12. 5 10.0 9.5 2-3 x 1 012 N/A...

Fabrication and characterization of lateral spin valves

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... 3.8 The alignment marks are scanned repeatedly until a satisfactory alignment is obtained Scan Mark Scan Mark Scan Mark Figure 3.8 SEM image showing alignment marks of optical structures 31 Chapter ... exploited in the magnetic sensors used in the read-heads of hard disks Aggressive research work is also being carried out on magnetic random access memories (MRAM) due to their various advantages over ... lateral spin valve with aluminum as the spin diffusion line (b) SEM image of the spin valve fabricated by Jedema et al [1] 98 xii LIST OF SYMBOLS AND ABBREVIATIONS aluminum Al aluminum oxide Al2O3...

Fabrication and characterization of photonic crystals

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... 2.3 a, b) SEM images of colloidal crystal of 0. 97 m silica spheres in large and small magnification; c, d) SEM images of colloidal crystal of 0.33 m silica spheres in large and small magnification……………………………………………………… ... than that of the hexagonal array Figure 2.3 a, b) SEM images of colloidal crystal of 0. 97 m silica spheres in large and small magnification; c, d) SEM images of colloidal crystal of 0.33 m silica ... supporting substrate, which can only be accommodated by the creation of cracks, and defects accommodate lattice mismatch in epitaxially grown materials The final result is a compact of spheres arranged...

Fabrication and characterization of planar hall devices

Danh mục: Tổng hợp

... radiation is transmitted through the “clear” parts of a mask The pattern of opaque chromium blocks some of the radiation UV light Glass Mask Chromium Pattern Si wafer Fig 3 .12 Schematic diagram of photolithography ... Organization of Thesis The outline of the thesis is as follows In chapter 1, the background and the objectives of thesis will be stated The summary of theories for various MR effect and Planar ... Magnetoresistance NiFe Permalloy PHE Planar Hall Effect vii Abbreviation Ru Ruthenium s Second (time) S Squareness S* Squareness ratio Ta Tantalum V Voltage Vs versus VSM Vibrating Sample Magnetometer...

Fabrication and characterization of tunneling field effect transistors (TFETs)

Danh mục: Tổng hợp

... the semiconductor industry Some early smallscale integrated circuits consist of as few as two transistors each, forming a simple logic gate Today, an advanced Ultra-Large-Scale-IC (ULSI) such as ... dominates over all other capacitances, the S of a conventional MOSFET would be as small as about 60 mV/decade (ln10×kT/q) at room temperature (300 K) This value marks the smallest S achievable ... Objective of research and outline of the thesis This thesis is aimed at the study of TFET characteristics through both experiments and simulation In this study, fabrication of lateral TFETs was...

Fabrication and characterization of semiconductor nanowires for thermoelectric application 5 6

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osepchuk j m the history of the microwave oven a critical review microwave symposium digest 2009 mtt apos 09 ieee mtt s international publication date 7 12 june 2009