nanostructured photovoltaics materials fabrication and characterization
Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
... Al-coated substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively ... intrinsic aSi:H, µc-Si:H(n) and ZnO:Al are 3, 69 and 142 nm, respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 nm, respectively ... reported bandgap of amorphous silicon (~1.7 eV) against that of crystalline silicon (1.1 eV), it follows that there is a larger band offset (~0.45 eV) at the valence band edges and a smaller band offset...
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Fabrication and characterization of memory devices based on organic polymer materials
... Units and Europium Complex 62 3.1 Introduction 62 3.2 Experiment 63 3.2.1 Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and ... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of ... dyes, organic metal particles and carbon-rich compounds to form composite materials and to facilitate solution process in memory fabrications Examples of such kinds of materials include PS: C60 composite...
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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
... FABRICATION AND CHARACTERIZATION OF NANOSTRUCTURED HALF METALS AND DILUTED MAGNETIC SEMICONDUCTORS LI HONGLIANG (M Eng., Tongji ... Objectives and motivation In this study, we focused on the fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx The former is a kind of half metal, while the ... objective and motivation of this work, followed by the outline of this thesis Chapter 2: Fabrication and characterization of Fe3O4 nanostructures Epitaxially-grown Fe3O4 thin films and nanowires...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source
... field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating magnetic field Design, fabrication, and ... conductor, water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet connections were provided The water flow rate liter/min and pressure 3·5 kg/cm2 was ... restricted to less than 20◦ C The inductance and resistance of the solenoid coils were measured using precision LCR meter (Model:PM6306, Design, fabrication, and characterization of a solenoid system...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views with annealing ... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and ... Gratzel ¨ and co-workers,21 was designed for both front- and backilluminated NP-DSSC devices The large concentration of I2 and lack of Li+ in electrolyte C lead to the decrease in both JSC and VOC...
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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials deposited on FTO substrates by the EPD method and their application as counter ... different deposition materials: (a) graphenes, (b) SWNTs, and (c) graphene-SWNT composites each counter electrode In the visible range (at 550 nm), transmittances of the graphene, SWNTs, and grapheneSWNT...
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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot
... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials deposited on FTO substrates by the EPD method and their application as counter ... different deposition materials: (a) graphenes, (b) SWNTs, and (c) graphene-SWNT composites each counter electrode In the visible range (at 550 nm), transmittances of the graphene, SWNTs, and grapheneSWNT...
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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... completely and a nanotip with pyramid-like shape is developed The field emission property was measured, and the turn-on field and work function of the ultra-sharp nanotip was about 5.37 V/µm and 4.59 ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and...
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Large area plasmonic nanostructures design, fabrication and characterization by laser
... Experimental details 86 4.2.1 Fabrication and characterization of bimetallic Ag/Au nanodots formed by thermal annealing 86 4.2.2 Fabrication and characterization of quasi-ordered bimetallic ... focused on the design and fabrication of plasmonic nanostructures over a large area using scalable, rapid and inexpensive nanofabrication tools, such as laser nanofabrication and thermal annealing, ... nm, and (e) λ = 1298 nm) and the dipole resonance ((b) λ = 1233 nm, (d) λ = 1599 nm, and (f) λ = 1887 nm) The lattice constants for nanorod array are 800 nm for (a) and (b), 1100 nm for (c) and...
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2D and 3d terahertz metamaterials design, fabrication and characterization
... Tunable and Broadband Terahertz Metamaterials: Design, Fabrication, and Characterization 66 5.1 Structurally tunable metamaterials 66 5.2 2D hybrid terahertz metamaterials ... control and manipulate terahertz waves 1.4 Organization of thesis This thesis is directed towards to the design, fabrication, and characterization of terahertz metamaterials in 2D and 3D forms and ... metamaterials 97 6.3 Summary 109 References 111 Chapter 3D Terahertz Metamaterials Tube: Design, Fabrication, and Characterization 113 7.1 Actively and...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
... MOS-HEMTs with and without in situ VA and SiH4 treatment The number of the measured devices with and without in situ VA and SiH4 treatment are 29 and 23, respectively With in situ VA xiii and SiH4 ... into three categories: IT and consumer electronics, automotive, and industry [8] Fig 1.2 Bandgap EG of hexagonal (α-phase) and cubic (-phase) InN, GaN, AlN, and their alloys versus ... wafer and Si (111) substrate removal, and BCB stands for benzocyclobutene (c) GaN/AlGaN buffer bonded to a glass wafer (d) Final device structure after releasing the carrier wafer G, S and D stand...
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Fabrication and characterization of germanium photodetectors
... detector dark current and photocurrent sources, and the transistor channel noise [1.17] 1.5 Objectives and Scope The main aim of this thesis was to demonstrate fabrication and characterization of ... high stand-by power consumption thus making Ge MSM photodetectors unfavorable and not practical Due to the narrow bandgap and strong Fermi-level pinning of the metal/Ge interface at valence band, ... carrier-transit-time-limiting bandwidth and efficiencies of normal incidence PIN Ge photodetector 25 Fig 2.4: Schematic of a waveguide-fed photodetector 27 Fig 2.5: Bandwidth and responsivity...
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Fabrication and characterization of composite membranes for gas separation
... Saufi and Ismail, 2004) Fig 1.2 also compares oxygen and nitrogen separation properties of polymeric materials and inorganic materials (zeolites and carbon molecular sieves) Molecular sieve materials ... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support ... Spillman and Sherwin, 1990; Paul and Yampol’skii, 1994; Mulder, 1996): ease of installation and operation, size and weight efficiency, potentially low energy consumption, environmentally benign and...
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Fabrication and characterization of luminescent silicon nanocrystal films
... memories include dynamic-random-access memory (DRAM) and flash memory DRAM allows fast write and erase However, its data retention is limited by junction and transistor leakages and thus frequent refresh ... [20,21] These promising materials are mechanically and chemically stable and technically compatible with the existing Si processing technology On the other hand, fabricating size- and surface-controlled ... the standard Si technology has motivated extensive researches in the development of Si-related materials for optoelectronic applications However, bulk Si has an indirect energy bandgap and is...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes
... Wang, my parents and my family for their endless love, encouragement and support that enable me to continue my academic pursuing i Fabrication and Characterization of Ultrafiltration and Nanofiltration ... geometric standard deviation (σp) and the molecular weight cut off (MWCO) of PBI membrane fabricated from same polymer .152 x Fabrication and Characterization of Ultrafiltration and Nanofiltration ... 5.2.1 Chemicals 134 5.2.2 Fabrication of PBI Nanofiltration Hollow Fiber Membranes 135 v Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI...
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Fabrication and characterization of AIGaN gan HEMTs
... layer and the channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, ... chemical, electrical and mechanical properties of materials such as GaN, AlN and AlGaN It also introduces the basic device structure of the AlGaN/GaN HEMT and its properties and characteristics ... wide-bandgap material, for example AlGaN, is ndoped with Si donors The added charges bend the band edges and create a triangular potential well in the conduction-band edge of the lower bandgap...
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Fabrication and characterization of lateral spin valves
... Hacia, M Wahle, S F Fischer and U Kunze, J Appl Phys 96, 6706 (2004) 21 Chapter Three: Fabrication and characterization of lateral spin valves CHAPTER THREE FABRICATION AND CHARACTERIZATION TECHNIQUES ... structure after 1st and 2nd level EBL and deposition 32 Chapter Three: Fabrication and characterization of lateral spin valves Figure 3.9 SEM image of structures after 2nd EBL and 2nd evaporation ... structure, a total of EBL steps and deposition steps were required Figure 3.5 shows the various procedures involved in EBL fabrication 27 Chapter Three: Fabrication and characterization of lateral...
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Fabrication and characterization of photonic crystals
... energy bands separated by energy gaps 1.1.3 Optical Characterization Optical measurements are the main technique for the characterization of photonic band gap materials While optical reflectance and ... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... they are nanofabrication, self-assembly methods, colloidal crystal templating and directed self-assembly methods 1.1.4.1 Nanofabrication Nanofabrication techniques use lithography and etching,...
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Fabrication and characterization of planar hall devices
... chemical and physical properties of AZ 7220 photoresist series 31 The summary for the materials used in this fabrication and properties 39 The parameters for the deposition of Co, Cu, Al and NiFe materials ... experimental techniques involved in the fabrication of MR and PHE devices The steps and flow chart for the device fabrication is discussed in this chapter This fabrication includes wafer cleaning, ... technological applications in magnetic recording and sensors GMR describes the behavior of materials that have alternating layers of ferromagnetic and nonmagnetic materials deposited on a non – conducting...
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Fabrication and characterization of tunneling field effect transistors (TFETs)
... band to band tunneling BBTBT Material related parameters for band to band tunneling xi CBTBT Material related parameters for band to band tunneling Eg Material band gap Ev,1, EFp,1 Valence band ... material band gap plays an important role in determining the band-to-band generation rate Utilizing a material with a smaller band gap could greatly increase the band-to-band generation rate and thus ... of source and channel materials with favorable band alignment for band-to-band tunneling to occur However, the process flow is not very compatible with conventional CMOS technology, and a new...
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