inkjet printing fabrication and characterization of oleds
Study of drop on demand inkjet printing technology with application to organic light emitting diodes
Ngày tải lên :
11/09/2015, 10:17
... Drop-on-Demand Inkjet Printing of PEDOT:PSS 100 4.2.3 Design and Fabrication of P-OLED Devices 109 4.3 Results and Discussion 118 4.3.1 ITO Surface Patterning 118 4.3.2 Drop-on-Demand Inkjet Printing of ... performance of OLED fabricated by means of drop-on-demand inkjet printing technology and to compare with spin-coated OLED devices (3) To investigate and characterize drop-on-demand inkjet printed ... advantages of relative ease of fabrication and low fabrication cost, lack of need for backlighting, flexibility, transparency and scalability OLEDs were first introduced in 1987 by Tang and Van...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source
Ngày tải lên :
22/12/2013, 08:58
... system is capable of producing off-resonance, mirror, and flat magnetic field configurations A mirror ratio of 1·1 and a maximum flat field of 1400 G has been obtained The measured values and the design ... precision LCR meter (Model:PM6306, Design, fabrication, and characterization of a solenoid system 465 Figure The cross-sectional view of the integrated assembly of the three-solenoid coils with iron ... Design, fabrication, and characterization of a solenoid system 467 Figure The variation of the magnetic field with solenoid current Conclusions The solenoid coil magnets described here offers a...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
Ngày tải lên :
19/03/2014, 16:48
... deionized water containing a small proportion of Al2O3 particles of average size 300 nm Parts a and b of Figure show top and side views of SEM images of ATO films after ultrasonic cleaning that completely ... increasing duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views ... durations Figure shows the variation of length of TiO2 NT as a function of period of anodization (the corresponding SEM images of each datum showing the lengths of the tubes are given in the Supporting...
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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
Ngày tải lên :
20/06/2014, 23:20
... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... illumination of 100 mW/cm2 under an open-circuit condition and in a frequency range of 0.1 Hz to 100 KHz Results and discussion Figure shows the FE-SEM images of deposited (a) graphenes, (b) SWNTs, and ... electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells Figure shows the Bode phase plots of the DSSCs with graphenes, SWNTs, and graphene-SWNT composite...
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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot
Ngày tải lên :
21/06/2014, 17:20
... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... illumination of 100 mW/cm2 under an open-circuit condition and in a frequency range of 0.1 Hz to 100 KHz Results and discussion Figure shows the FE-SEM images of deposited (a) graphenes, (b) SWNTs, and ... electrochemical properties of the counter electrodes and the energy conversion efficiencies of cells Figure shows the Bode phase plots of the DSSCs with graphenes, SWNTs, and graphene-SWNT composite...
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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
Ngày tải lên :
21/06/2014, 17:20
... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and ... microscopy, and scanning tunneling microscopy are intensively investigated [4] The efficiency of these techniques strongly depends on the characterization of the tip For instance, a high-brightness and...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
Ngày tải lên :
09/09/2015, 11:15
... reported bandgap of amorphous silicon (~1.7 eV) against that of crystalline silicon (1.1 eV), it follows that there is a larger band offset (~0.45 eV) at the valence band edges and a smaller band offset ... properties of the c-Si wafer and of the a-Si and µc-Si thin-film layers, based on [127] as well as on the fitting of the lifetime samples of Figure 4.4 The activation energy (i.e position of the ... low conduction band offset, and a sufficiently high valence band offset so as to have an efficient collection of photogenerated electrons while minimizing the back diffusion of holes into the...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
Ngày tải lên :
10/09/2015, 09:11
... the flow rates of SiH4 (mole fraction of 49.3 % and partial pressure of 2.46 Torr), NH3 (mole fraction of 50.5 % and partial pressure of 2.53 Torr), and N2 were 60, 60, and 250 standard cubic centimeter ... spacing LGD of m achieved a breakdown voltage VBR of 800 V and an on-state resistance Ron of mcm2 In addition, sub-threshold swing S of ~ 97 mV/decade and current on/off, Ion/Ioff, ratio of ~ 106 ... density of 2-DEG ns of pseudomorphic AlGaN/GaN heterosture as a function of Al content x of the AlxGa1 xN barrier layer [10] conduction band edge energy, and EC is the conduction band offset...
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Fabrication and characterization of germanium photodetectors
Ngày tải lên :
10/09/2015, 15:47
... FABRICATION AND CHARACTERIZATION OF GERMANIUM PHOTODETECTORS WANG JIAN B Sci (Peking University, P R China) 2006 A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL ... carrier-transit-time-limiting bandwidth and efficiencies of normal incidence PIN Ge photodetector 25 Fig 2.4: Schematic of a waveguide-fed photodetector 27 Fig 2.5: Bandwidth and responsivity of selected ... (=0.63%) and SiGe buffer (=0.12%) Inset shows the light and dark current leakage of SEG Ge on SiGe and Si/SiGe buffer layers for detectors with diameters of 28 m and lateral spacing of 0.2 m...
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Fabrication and characterization of composite membranes for gas separation
Ngày tải lên :
12/09/2015, 11:24
... adjustment of syngas ratios and recovery of hydrogen from nitrogen (ammonia production) and hydrocarbons (refinery processes) (Ho and Sirkir, 1992; Kesting and Fritzsche, 1993; Paul and Yampol’skii, ... and Miss W Natalia i Appreciation also goes to the staff in the Department of Chemical and Biomolecular Engineering that have helped me in various characterization techniques and given me professional ... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support...
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Fabrication and characterization of luminescent silicon nanocrystal films
Ngày tải lên :
12/09/2015, 11:25
... optoelectronics, and biomedicine In the size regime of nanometers, the structure and properties of Si NCs differ dramatically from those of the bulk The area of Si NCs is currently one of the most ... Fig 2.5 The comparison of (a) Raman and (b) PL spectra of a µm droplet and the background film 31 Fig 2.6 Si 2p peaks in XPS spectra of Si NC films deposited in and 100 mTorr O2 gases ... temperature of 800 °C 137 xv List of Tables Table 1.1 Luminescence bands of Si nanostructures xvi Chapter 1: Introduction and Literature Survey Chapter Introduction and Literature...
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Fabrication and characterization of memory devices based on organic polymer materials
Ngày tải lên :
12/09/2015, 11:29
... Units and Europium Complex 62 3.1 Introduction 62 3.2 Experiment 63 3.2.1 Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and ... parents for their supports and understanding over the years I TABLE OF CONTENTS Page ACKNOWLEDGEMENTS TABLE OF CONTENTS ABSTRACT LIST OF TABLES LIST OF FIGURES LIST OF SYMBOLS CHAPTER Introduction ... technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of data in a separate...
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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
Ngày tải lên :
12/09/2015, 11:29
... illustration of the fabrication process of Fe3O4 36 nanowires FIG 2.6 FIB images of Fe3O4 nanoconstrictions with a width of (a) 150 36 nm and (b) 80 nm, and a length of µm FIG 2.7 XRD pattern of Fe3O4 ... study of active control and manipulation of spin degree of freedom in materials and devices [5] As in this case, the information is carried by both the spin and charge degree of freedoms of an ... Chapter Introduction and literature survey 1.4 Objectives and motivation In this study, we focused on the fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx The...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes
Ngày tải lên :
12/09/2015, 11:29
... geometric standard deviation (σp) and the molecular weight cut off (MWCO) of PBI membrane fabricated from same polymer .152 x Fabrication and Characterization of Ultrafiltration and Nanofiltration ... 110 iv Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes Chapter WANG KAI YU Chemical Modification of PBI Nanofiltration Membranes Applied for the Separation of Electrolytes ... 5.2.1 Chemicals 134 5.2.2 Fabrication of PBI Nanofiltration Hollow Fiber Membranes 135 v Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI YU...
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Fabrication and characterization of AIGaN gan HEMTs
Ngày tải lên :
05/10/2015, 22:32
... layer and the channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, ... to first develop and optimize a good fabrication process that is reproducible and cost effective Development and optimization of fabrication processes such as the formation of ohmic contacts ... [12] and the highest unity-gain bandwidth (ft) and unity-power gain bandwidth (fmax) could reach 67 and 140 GHz [13], respectively Extremely high breakdown voltage of 100V has been recorded, and...
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Fabrication and characterization of lateral spin valves
Ngày tải lên :
05/10/2015, 22:32
... F Fischer and U Kunze, J Appl Phys 96, 6706 (2004) 21 Chapter Three: Fabrication and characterization of lateral spin valves CHAPTER THREE FABRICATION AND CHARACTERIZATION TECHNIQUES OF LATERAL ... structure after 1st and 2nd level EBL and deposition 32 Chapter Three: Fabrication and characterization of lateral spin valves Figure 3.9 SEM image of structures after 2nd EBL and 2nd evaporation ... structure, a total of EBL steps and deposition steps were required Figure 3.5 shows the various procedures involved in EBL fabrication 27 Chapter Three: Fabrication and characterization of lateral spin...
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Fabrication and characterization of photonic crystals
Ngày tải lên :
05/10/2015, 22:32
... FABRICATION AND CHARACTERIZATION OF PHOTONIC CRYSTALS WANG YANHUA (B Sc., JILIN UNIVERSITY) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF SCIENCE DEPARTMENT OF PHYSICS NATIONAL UNIVERSITY OF ... function of v the wavevector k , these frequency “bands” form the band structure of the crystal Figure 1.2 shows band structure of an ‘inverse’ face-centered cubic lattice of spheres consisting of ... they are nanofabrication, self-assembly methods, colloidal crystal templating and directed self-assembly methods 1.1.4.1 Nanofabrication Nanofabrication techniques use lithography and etching,...
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Fabrication and characterization of planar hall devices
Ngày tải lên :
05/10/2015, 22:32
... another i Table of contents TABLE OF CONTENTS ACKNOWLEDGEMENTS i TABLE OF CONTENTS ii SUMMARY v MAJOR SYMBOLS AND ABBREVIATION vii LIST OF FIGURES ix LIST OF TABLES xii LIST OF PUBLICATIONS xiii ... and MR as a Function of Field Orientation iii Table of contents 4.6 4.7 4.5.2: PHE voltages as a function of orientation of applied field 60 4.5.3: AMR voltages as a function of orientation of ... direction of magnetization in each magnetic layer The resolution of the angle of the direction of magnetization with respect to the direction of the sense current of PHE is twice better than that of...
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Fabrication and characterization of tunneling field effect transistors (TFETs)
Ngày tải lên :
06/10/2015, 20:36
... EV,1 and EFp,1 are the valence band energy and hole Fermi energy on one side of the tunnel barrier, and EC,2 and EFn,2 are the conduction band energy and electron Fermi energy on the other side of ... band to band tunneling BBTBT Material related parameters for band to band tunneling xi CBTBT Material related parameters for band to band tunneling Eg Material band gap Ev,1, EFp,1 Valence band ... interface-trap density Wtunnel Band to band tunneling barrier width κ Dielectric constant t Physical thickness of a dielectric layer GBTBT Band to band generation rate Dtunnel Band to band tunneling factor...
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