... increases with increasing peak energy (decreasing QD size) The exciton binding energy is given by the electron-hole-binding state, whereas the biexciton-binding energy reflects in addition electron– ... photon generation using the time reordering scheme [26] Conclusions In conclusion, we have studied a novel type of strain-free GaAsquantumdots which are fabricated by filling of selfassembled nanoholes ... 120-nm-thick Al0.3 5Ga0 .65 As barrier Types ofGaAsQuantumDots Fig a Top view AFM image of an AlGaAs surface after LDE with Al droplets at T = 620°C Arrow ‘‘A’’ marks a shallow hole and ‘‘B’’ a deep...
... functionalization of the nanoholes, the fabrication of a novel type of very uniform, strain-free GaAs QDs by filling of LDE nanoholes in AlGaAs with GaAs, has been demonstrated [21] In the present ... to the GaAsquantum well Interestingly, a quantum well–related peak is missing or very weak for the samples containing LDE QDs Probably, the excitons from the GaAsquantum well migrate into the ... Self-assembled quantumdots are created by filling of nanoholes in AlGaAs with GaAs Dependent on the sample design and the LDE process parameters, these QDs show either broadband optical emission...
... μL of the as- synthesized QDs containing different concentrations of nanoparticles After 24-h labeling and washing, 20 μL of a solution of MTT (5 mg/mL in PBS) was added to each well, and assay ... selected as a capping ligand for controlling the crystal quality of QDs such as size, size distribution, and crystallinity by the formation of the chelated cadmium precursors Moreover, since PAA ... but also the quantum yields of the QDs In our case, the quantum yields of the as- synthesized CdSe cores are around 2–3% In order to passivate their surface trap sites and enhance the quantum yields,...
... Physics, IIT Madras, India and Department of Physics, National University of Singapore, Singapore under the supervision of Prof C Vijayan and Prof Wei Ji The contents of this thesis, in full or part, ... supervision at Department of Physics, Indian Institute of Technology Madras, Chennai, 600 036, India and Department of Physics, National University of Singapore, Singapore, 119077 The contents of ... photoluminescence in CdS-CdSe-CdS nanorods in NIR-I as well as NIR-II windows and the analysis of the results using Maxwell Garnett theory to gain understanding on the optical nonlinearity in hetero-nanostructures...
... of the innovative approaches for treating cancer: photodynamic therapy (PDT), and introduce quantumdotsas a possible photosensitizer sensor Since quantumdots intrinsic property of giving off ... part of this setup was the connecting tube for introducing the H2Te gas, which should be as short as possible and the tube should be made of glass or another inert material The use of glass joints ... precursor before introducing H2Te gas 14 The chemical affinity of CA on the CdTe quantumdots is not as good as TGA Therefore, after the H2Te gas introduction, small lumps ofquantumdots agglomeration...
... determine the cutoff value According to the data, the cutoff value of this assay was defined as 14.5, any result under 14.5 from the 160 DNA samples was considered as positive one (Figure 3) Based ... of Modification and coupling of superparamagnetic nanoparticle Determine of cutoff value and validation of QDs and superparamagnetic nanoparticle-based hybridization 3-Aminopropyl-trimethoxysilane ... PCR assay consists of the extraction of DNA of cervical swab samples, PCR reaction and nucleic acid agarose gel electrophoresis and staining of ethidium bromide, while our hybridization assay...
... of PL intensity from GaAs contact layer emission Remark that QD and contact emission are in anti-phase with each other The observed reduction of contact emission and increase of QD emission in ... intensity of QD emission as a function of applied voltage at 15 T (b) Circular polarization degree of QD emission for lower and higher laser intensity as function of applied voltage at 15 T and ... University of São Carlos, São Carlos, Brazil Physics Institute, UNICAMP, Campinas, Brazil 3School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham,...
... The similar cooperative nucleation of the dots pits pairs was detected at the growth of InAs QDs on GaAs substrate [7], GaAs/ AlGaAs QD pairs [11] and at the growth of In0 .5 3Ga0 .4 7As layers on InP (001) ... droplet-induced GaAs/ AlGaAs QD pairs growth [11] also confirm this assumption From the industrial point of view, the narrow band gap III–V semiconductor materials like InAs, GaSb, InSb and their ... energy of InAsSbP quaternary alloy, as well as separately of InAs-InSb, InAs-InP and InSb-InP ternary alloys We found that at T = 550 °C (our growth temperature), the Gibbs energy has the minimal...
... green intensity, andas shades of blue when the opposite is true The dominant bright yellow and the sparse scattering of blue confirms the impression obtained from viewing the separate channels in ... bottom shows the positions of the starting points of the contours on every slice The starting points became offset from one another as a result of the editing and drastic refitting required when ... image, asin Fig 8(b) The pixels are shown as grey when the intensity difference is zero, as shades of yellow when the red intensity is greater than the green intensity, andas shades of blue...
... (GSH) concentration by as much as twofold without increasing oxidized GSH levels, as well as increasing the levels of the GSH biosynthetic enzyme γ-glutamylcystein synthase It has also been demonstrated ... the importance of adequate surface modifications in developing luminescent QDs for labeling in bioanalysis and sensing The nature of the ligands being coordinated to the QDs surface and the particular ... diameter as well as composition[5] The band-gap of semiconductor nanocrystals increase as their size decreases, resulting in shorter emission wavelength[6,7] Hence, the quantum confinement effects...
... imaging of cells and tissues (A) 3D imaging of intracellular localization of embedding and fixation processes Nonegrowth hormone and prolactin and their mRNA using quantumdots (Q and confocal laser ... detection and diagnosis of cancers, especially for finding sites of metastasis Optical imaging, particularly fluorescence imaging, has high intrinsic spatial resolution (theoretically 200–400 nm), and ... Biological tissue and fluids contain a variety of intrinsic fluorophores, particularly proteins and cofactors, yielding a background signal that decreases probe detection sensitivity Intrinsic biological...
... on the pure vicinal surfaces Conclusions In conclusion, InAs quantum structures simultaneously grown on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01-1], andGaAs (n11)B (n ... Sanguinetti’s reports, in which the critical thickness increased as the substrate varied from GaAs (511)B to GaAs (311)B [20] Generally, the formation of self-assembled InAs QDs is explained in ... for high index surfaces [19] The inhibition of strain relaxation inside the islands, by increasing the island internal energy term, should determine a delay in the 3D growth mode onset As experimentally...
... electrons and holes The conduction and valence bands of the structures are defined within a single-band or multi-band k·p model, which includes a strain The three-dimensional [3-D] potential profile in ... obtained from Mitin et al [10], in the framework of this model For fitting of our experimental results, we take values of n, determined from self-consistent modeling of potential profile using ... QD structure in which a plane of dopants is placed in the middle of each GaAs layer that separates QD layers These structures contain 20 stacks of InAs QD layers separated by GaAs with various...
... reflective For ex situ annealing, the samples are also cleaved into smaller (a) GaAs cap (b) In0 .1 3Ga0 .8 7As GaAs buffer (001) -GaAs [110] [1-10] Figure Structure of InAs QDs on InGaAs CHPs (a) Schematic ... over-critical InAs 3D dotsand the underlying InGaAs CHP layer which exists only above the MDs The second WL is the thin InAs 2D film between the InGaAs CHP layer and the overlying GaAs capping layer ... Characteristics of dislocations at strained heteroepitaxial InGaAs /GaAs interfaces J Appl Phys 1989, 66:2993-2998 Ryu S-W, Kim I, Choe B-D, Jeong WG: The effect of strain on the interdiffusion in InGaAs/GaAs...
... cultured in the cell culture medium containing μg/ mL adriamycin (Sigma) Both cell lines were maintained in RPMI-1640 medium containing 10% FCS, 100 U/ml of penicillin, and 100 μg/ml of streptomycin ... multidrug resistance Interestingly, combined treatment of Cdte QDs + DNR strongly caused cytochrome c to be released into the cytosol and significantly activated caspase-9 and caspase-3 and induced ... cells were purchased from the Institute of Hematology of Tianjin, Chinese Academy of Medical Sciences (Tianjin, China) To develop the drugresistant cell line (HepG2/ADM), adriamycin was added to...
... (2008) 3:534–539 Bias: n+ GaAs contact Si layer GaAs S -GaAs 3ML InAs GaAs n+ GaAs contact Si layer GaAs( 001) substrate 24 Fig Typical QDIP structure of GaAs/ InAs material 16 12 Island Count 20 (a) ... spacer GaAs material to form the InAs QDs, and the five layers of GaAs/ InAs are called S-QD In addition there is a 50 nm GaAs layer inserted between the S-QD regions and bottom (top) Si- doped GaAs ... layers of nominally 3.0 momolayer (ML) InAs (quantum dots) were inserted between highly Si- doped bottom and top GaAs 1000 nm contact layers with doping density 1018 cm-3 Each layer of InAs is...
... Conclusion Free standing films of CdS quantumdotsof mean size 3.4 nm are synthesized by a simple chemical route using synthetic glue as the host matrix The excitonic transitions are studied using ... spectroscopy and analyzed in detail using noninteracting particle model We assign the first four bands observed in PAS to 1se–1sh (band E1), 1pe–1ph (band E2), 1de–1dh (band E3) and 2pe–2ph (band E4) ... nanocomposite (circles) along with Gaussian fit (solid line) Deconvoluted peaks corresponding to excitonic transitions (dashed lines) material parameters such as effective mass and bandgap as numerical...
... frequency of incident light, for the ensemble of SOEQDs in the absence of external fields Note that in the model of Gaussian dots distribution, a single distinctly explicit maximum of absorption ... realize new inter-band transitions widening the scope of applications of devices based on such systems Meanwhile existence of the external quantizing fields often results in restructuring of the energy ... field intensity while the levels are remaining equidistant Figures and show the dependence of AE inside SOEQD on the intensities of electrical and magnetic fields, respectively, when the lengths of...
... peaks one of higher intensity and a second smaller peak Moreover, a few extra tiny peaks can be distinguished in the spectral region between them To gain more insight into the WGM structure in the ... Expansion of the measured fluorescence spectrum Arrows indicate the free spectral range (FSR) and TE/TM mode splitting (b) Result of fast Fourier analysis adjacent TE and TM modes) again in agreement ... highly efficient having an intensity comparable to the Stokes PL as seen from Fig We found that the integrated intensity of ASPL has an almost linear dependence on the excitation intensity under weak...