iii v superlattices with graded interfaces under magnetic quantization
Báo cáo hóa học: " Study of the vertical transport in p-doped superlattices based on group III-V semiconductors" pdf
... energy E and wavevector k , the EME takes the form: ∑ j′m′j K jm j kK T + V A + VH + VHET + V XC j′m′j kK j′m′j kK ′ vk = E v (k) jm j kK vk (1) where T is the effective kinetic energy ... * eff q ,v ( E F ) (4) where eff q ,v ( E F ) = 2 ⎛ mq* ⎜ ⎜ ⎝ ⎞ ⎟ ⎟ ⎠ ∫ dk (E z F − q ,v (k z ))( q ,v (k z )) (5) BZ The prime indicates the derivative of ε q ,v (k z ) with respect ... denote heavy hole, light hole and split-off hole Introducing sq(EF) as the conductivity contribution of band Eq ,v , one can write q (E F ) = ∑ q ,v ( E F ) (3) v q ,v ( E F ) = e 2 q ,v mq *...
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Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology
... NOVEL III- V MOSFET INTEGRATED WITH HIGH-K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH-K DIELECTRIC AND ... On-current versus gate length comparison under similar gate overdrive in n-MOSFET with passivated and directly deposited InGaAs n-MOSFET A significant increase in drive current is obtained with the ... limit of 60 mV/dec subthreshold swing (S.S.) This has led to the quest for a switching device having sharper S.S to achieve a better Ion/Ioff ratio Innovative device concepts have been proposed...
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Optical time resolved spin dynamics in III-V semiconductor quantum wells
... (2.4) Jz=±3/2 (heavy-electron states), thus electrons with Jz=±1/2 move with effective mass m0/(γ1+2γ2) and those with Jz=±3/2 with effective mass m0/(γ1-2γ2) CB hν Eg hh hν’ VB lh E p Figure ... can be varied from just below 1.5 to above eV as x varies from to However, AlxGa1-xAs becomes an indirect semiconductor, where the conduction band minimum does not occur at the same wavevector ... Heavy-holes have possible Jhz values of +3/2 and -3/2 and light-holes have +1/2 and -1/2 In addition there is a spin-orbit split-off band with a J value of 1/2, but the splitting is 340 meV in...
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Tài liệu tiếng anh Điện tử công suất mạch MERS Loss and rating consideration of a wind energy conversion system with reactive compensation by magnetic energy recovery switch
... side inverter Table I: Design parameters used for large scale system investigations Description MERS system Active rectifier IGBT volt rating 1200 V 1700 V 1100 V Peak IGBT volt 1000 V 1100 V Dc-link ... conversion system with MERS solution and with a 2-level active rectifier solution have been investigated The design of the two systems are given in Table I and are based on having a high voltage ... 25, 2008 at 23:56 from IEEE Xplore Restrictions apply > 500 A Vdc=35 5V * Vdc=37 0V * Vdc=38 5V * Vdc=40 0V MERS> Control C) - ,rDc-voltage p C y,/Generator side, RS -' - Capa, o-, -_-X - ...
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Tài liệu Activity 11.1: Experience with User Interfaces docx
... 94 Activity 11.1: Experience with User Interfaces Exercise 1: Identify characteristics of user interfaces ! Identify characteristics of user interfaces Consider items you ... of user interfaces Consider items you use regularly As a class, discuss how well suited the user interfaces of these items are The instructor will write your answers on a flip chart ...
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Báo cáo khoa học: "An Algorithm For Generating Referential Descriptions With Flexible Interfaces" pdf
... network N In Description Variable r, gr ,v, gv R C N C L FD DD List refs P-props excluded local (r) and global referents (gr) and variables (v and gv) associated with them a specification ... Next-Property(refs, ps) A(p) find-best-value(A(p) ,V) basic-level-value(r,A(p)) rules-out( ) Assoc-var(r) Prototypical(p, r) Descriptors(r) Map-to(Empty-Slots(FD)) lnsert-Unify( FD, ) Check-Scope(FD) ... Rel(A(p)) then for every other constant r' in p if Assoc-var(r') = nil then associate r' with a new, unique variable v' p ~ [r'~vqp ref~ ~ rel;~ u {r7 List ~ Append(List, Describe(r 'v' )) endif next...
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Báo cáo khoa học: Surface-enhanced vibrational spectroscopy for probing transient interactions of proteins with biomimetic interfaces: electric field effects on structure, dynamics and function of cytochromec doc
... integral binding of cytochrome c to phospholipid vesicles J Phys Chem B 108, 3871–3878 50 Basova LV, Kurnikov IV, Wang L, Ritov VB, Belikova NA, Vlasova II, Pacheco AA, Winnica DE, Peterson J, Bayir ... University Science Books, Sausalito Jiang X & Wang X (2004) Cytochrome c-mediated apoptosis Annu Rev Biochem 73, 87–106 Kagan VE, Tyurin VA, Jiang J, Tyurina YY, Ritov VB, Amoscato AA, Osipov ... Both techniques, however, are associated with low sensitivity and selectivity For Raman spectroscopy, this drawback can be overcome by choosing excitation lines in resonance with an electronic...
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Báo cáo khoa học: "Eliminative Parsing with Graded Constraints" doc
... satisfaction for the first time 0" nil (a) The snake is chased by the cat vl = v3 = v5 = (nd, 2) (nil, O) (pp, 4) vT (b) = (pc, 5) v2 v4 v6 = = = (subj,3) (ac,3) (nd, 7) Figure 1: (a) Syntactic dependency ... satisfy every single condition, overconstrained problems are no longer unsolvable Moreover, by deliberately specifying a variety of preferences nearly all parsing problems indeed become overconstrained ... instance, the above constraint can be paraphrased as follows: Every subordination as a subject requires a noun to be subordinated and a verb as the dominating word form which have to agree with respect...
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Báo cáo hóa học: " A novel asynchronous access method with binary interfaces" doc
... behavior of the device by the model user was visual Thus, as soon as the model user 'observed' that the behavior of the device was inconsistent with the required target, an intentional event ... behavior of the device is unacceptable to the user since this would be the only instance where a change in the behavior of the device would be welcome Conversely, if the behavior of the device ... interface Binary navigation control is thus required to enable most activities involving object manipulation with binary interfaces (e.g., single-switch drawing) Many such activities are currently...
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Báo cáo hóa học: " Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application" pdf
... chemistry thus provides an atomically smooth GaAs surface, which is a critical requirement for subsequent selective III- V growth during device fabrication In fact, preliminary III- V molecular beam ... Mingam H: Innovative materials, devices, and CMOS technologies for low-power mobile multimedia IEEE Trans Electron Devices 2008, 55:96-130 Radosavljevic M, Dewey G, Fastenau JM, Kavalieros J, Kotlyar ... coated with a 210-nm-thick antireflective coating (ARC), then covered by a 20-nm-thick SiO2 layer grown by plasma-enhanced chemical vapour deposition, and finally spin coated with a negative photoresist...
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Báo cáo hóa học: " Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy" pdf
... broad band is clearly visible in at 1.55 eV, with a full width at half maximum of &30 meV, well above the GaAs-related impurity lines The band shows a shoulder at 1.60 eV In order to attribute ... The calculated emission energy well compares with the observed PL peak value (EthGS = 1.56 eV) The low confinement energy (&30 meV) is due to the relatively large, but still capable of quantum confinement, ... activated quenching, with a measured activation energy EQUE & 100 meV Let us discuss the phenomenology presented The quenching process while showing a low quenching energy (EQUE & 100 meV) is...
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Báo cáo hóa học: "Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates" potx
... DiVincenzo, Science 309, 2173 (2005) G Burkard, D Loss, D.P DiVincenzo, Phys Rev B 59, 2070 (1999) A Imamoglu, D.D Awschalom, G Burkard, D.P DiVincenzo, D Loss, M Sherwin, A Small, Phys Rev Lett ... substrate temperature and vice versa for a fixed amount of deposition [17–20, 27–29] One thing to notice in this set of samples is that the density of droplet was very sensitive to the temperature ... the MSD increases with the increased mis-cut Intuitively, with a higher MSD, a shorter diffusion length can be expected and thus this explains the density trend: higher density with lower index...
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Báo cáo hóa học: " Surface Localization of Buried III–V Semiconductor Nanostructures" pot
... nanostructures are clearly observed in the derivative AFM image at the inset of this Fig 2b This result corroborates our initial supposition about the presence of a QD underneath each of the surface ... InAs nanostructures at the top surface First, as above commented, we observe mounds with the same density as that of the buried nanostructures and with similar dimensions, except for a lower height ... the underneath Nanoscale Res Lett (2009) 4:873–877 nanostructures have been previously reported by our group for Ga(As)Sb Qrings formed on GaAs(001) substrates [20] In that case, mounds with...
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Báo cáo khoa học: " Growth performance and nutrient utilization in black Bengal bucks (Capra hircus) supplemented with graded doses of chromium as chromium chloride hexahydrate" pps
... = [0.693/k] × 100 Responses of plasma glucose to IVGTT was further evaluated by calculating areas under the curve (AUC) relative to basal levels using trapezoidal geometry for the time period ... model of Systat standard version (6.0.1) using the level of supplemental Cr level as the independent variable When a significant F value (p < 0.05) was detected, the individual treatment means ... fecal samples was kept everyday for estimation of DM, OM, NDF, ADF, Cr and other trace elements mentioned above A fraction (20 g) was preserved in dilute sulfuric acid (20 % v/ v) for the estimation...
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Báo cáo khoa học: "Stage II/III rectal cancer with intermediate response to preoperative radiochemotherapy: Do we have indications for individual risk stratification?" pdf
... surgery, patients without previous evidence of distant metastatic disease presented with synchronous liver metastases (stage IV), as detected by manual liver palpation and intraoperative ultrasound ... Correlation with Survival Figure Distribution of ypT stage in 153 patients treated with preoperative RCT within clinical phase II /III trials 107 patients (70%) manifested as intermediate responders with ... with histologically confirmed adenocarcinoma of the rectum were treated at our department Of these, 153 patients with locally advanced (stage II /III) rectal cancer received preoperative RCT within...
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Báo cáo y học: "Cartilage markers and their association with cartilage loss on magnetic resonance imaging in knee osteoarthritis: the Boston Osteoarthritis Knee Study" doc
... protein levels and disease progression in osteoarthritis of the knee joint Br J Rheumatol 1995, 34:306-310 Vilim V, Olejarova M, Machacek S, Gatterova J, Kraus VB, Pavelka K: Serum levels of cartilage ... OA The overarching aim of this investigation was to conduct a study within an existing longitudinal dataset of knee OA with serial knee magnetic resonance imaging (MRI) to evaluate and validate ... opportunities to try and monitor cartilage turnover in vivo Type II collagen is degraded by proteolytic enzymes secreted by chondrocytes and synoviocytes The cleavage of the type II collagen triple helix...
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Báo cáo sinh học: "Growth, carcass and meat quality performance of crossbred pigs with graded proportions" doc
... likelihood to estimate variance components for animal models with several random effects using a derivative-free algorithm Genet Sel Evol 21, 317-340 Ollivier L (1970) L’6preuve de la descendance ... 1,pour %M À l’inverse, les différences en croisement pour les caractères de qualité de la viande sont en faveur de MS, avec un avantage de 1,1 t 0,4 point d’indice de qualité de la viande sur LW, ... their economic value will largely depend on the relative economic contributions of productive and reproductive traits Several crossbreeding schemes can be implemented in order to take advantage of...
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Effect of cationic micelles on the kinetics of interaction of Cr(III) gly gly2+ with ninhydrin
... The required solution of [Cr (III) -Gly-Gly]2+, without or with surfactant was taken in a three-necked reaction vessel fitted with a double-surface condenser to prevent evaporation, which was placed ... specific conductivity vs [surfactant] plots[12] The experiments were carried out at 30 and 70 °C under varying conditions, i.e., solvent being water, water+[Cr (III) -Gly-Gly]2+, water+[Cr (III) -Gly-Gly]2++ninhydrin, ... K.; Levashov, A V. ; Berezin, I V Micellization, solubilization and microemulsion Mittal, K L Ed New York: Plenum Press, 1977, Vol 2: and references therein 27 Bunton, C A.; Rivera, F.; Sepulveda,...
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Self aligned source and drain contact engineering for high mobility III v transistor
... thickness nm Tox Equivalent oxide thickness nm VFB Flatband voltage V Gate voltage V Threshold voltage V RIII -V RNi-InGaAs VG VT or VT' ' xxiii ∆VT Threshold voltage shift V W Contact width μm ... V and VD = 0.5 V, is plotted as a function of LCH Devices with FGA show about 48% enhancement of the drive current as compared with the devices without FGA (b) JG-VG of the devices with and without ... solid curves were extrapolated to VG = 10 V to obtain the value of RSD 77 xv Fig 3.14 RT in the linear regime (VD = 0.1 V) as a function of LG at a specified gate overdrive VG – VT of 1.8 V Equation...
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