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eithersettleforexcessdiethatfoundriesfabricatedforsomeotherapplication,ortrytocomeupwithadesign
thatsomefoundrycanthenfabricatebutwithnoguaranteethatitwillworkasdesired.Furthermore,thelackof
softwaredesigntoolsandconsistentqualifiedprocessesmeanquickturnaroundisnotpossible.Eveniftheinitial
diesworkasdesired,thereisnoguaranteethatthediesfabricated on subsequentrunswillhavecomparable
performance.
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TheOEICwillrequirenewtechniquesandtoolsforincorporatingnon‐siliconmaterialsintotheCMOSprocess.The
challengesaresignificantduetothedifferencesinlatticeconstants,whichcausethreadingdislocations,and
differencesinmeltingpointsofdifferentmaterials.Forexample,theannealingtemperaturefortheCMOS
transistorsourceanddrain,whichisabout1000°C,ismorethan50°abovethemeltingpointofgermanium—the
preferredmaterialfora40Gbpsavalanchegainphotodetector.Notwithstandingthesechallenges,IBMhas
fabricatedatransceivercompletelyinCMOS,includingafibercoupler,6‐channelWDMthatisonly20by70
microns.Eachchannelconnectstoa100‐micronlongmodulator,whichdirectlyconnectstotheelectronicdriver
andadetectorthatisonly10micronslong.Thetotaldevicewithoutaringresonatorassistisonly0.5mmlong;
witharingresonator,itisonly0.1mmlong.
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NanocompositeStructuralMaterials
Anareaofgrowingimportanceisdevelopmentofnano‐enhancedadvancedcompositesandrelatedstructures.
SignificantdevelopmentsareunderwayintheindustrialscaleproductionofCNTsandincorporatingCNTswithin
traditionalconstituentmaterialsusedtomanufacturefiberreinforcedPMCs.
CNTsarehollowcylindersthatconsistofindividualormultiplewallsofagraphitelatticestructure.Multi‐walled
carbonnanotubes(MWCNTs)aregenerallyeasiertoproduceandlessexpensivetomanufacturethansingle‐
walledcarbonnanotubes(SWCNTs).
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CNTspossessextraordinarytensilestrengthandexceptionalstiffness. On a
strength‐to‐weightbasis,CNTsareunmatchedbyanyothermaterial.CNTsalsopossessespeciallyhighthermal
conductivityandstabilitywhilesomevariantsofCNTspossessespeciallyhighelectricalconductivityandchemical
resistance.
FiberreinforcedPMCsrepresentthelargestandmostdiverseapplicationforcompositescomparedwiththose
producedwithmetal,ceramicorothermatrixmaterials.ApplicationsforPMCsarehighlydiverseincluding
sportinggoods,aerospacedefense,andautomotive.WhilePMCshavebeeninusefordecades,theintroductionof
nano‐enhancedPMCsisarecenttechnologicaldevelopmentwhichhaslargescalecommercialpotentialofacross
virtuallyallmajoreconomicsectors(e.g.,publicworks,heavyindustry,energyproduction,powerdistribution,
shipbuilding,consumerproducts,medicalequipment,groundtransportation,commercialaircraft,spaceanda
hostofmilitaryuses).
Carbonnanotubesareofrelativelyrecentorigin,withsingle‐wallCNTsbeingdiscoveredintheearly1990sand
productionprocessesdevelopedsincethattime.ThereforelargescalecommercialuseofCNTsinPMCshasbeen
justgettingunderwayoverthelastfewyearsbeginningwithasmallhandfulofapplications.Anumberof
companiesareactivelyinvolvedwithincorporatingCNTsintovariousconstituentmaterialsthatareusedto
manufacturePMCs.Nano‐enhancedconstituentmaterialscansignificantlyimprovethematerialpropertiesof
PMCsandattendantstructures(e.g.,higherstrengthandlighterweight)byleveragingtheextraordinaryproperties
ofCNTs.ExamplesofthetypesofPMCconstituentmaterialsthatcanbeenhancedbyCNTsincludethermoplastic
andthermosetresins,adhesivesandresininfusedtextiles(knownas“prepregs”)thataresubsequentlyfabricated
intolaminatedandotherPMCstructures.Additionalapproachestonano‐enhancedPMCsincludesincorporating
CNTsintothemanufactureofexistingfibersareusedtoreinforcePMCsaswellasdevelopingentirelyalternative
formsofnewfibersproducedfromCNTs.
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YuriVlasov,IBMResearch,“Transitionfromtelecommtodatacommtocomputercomm,”OIDAPhotonicIntegrationForum,
October6,2009,SantaClara,CA.
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SWCNThaveadiameter on theorderof1to3nanometers(nm)
whilethediameterofaMWCNTcanaveragefrom8to10
nms.TheindividualwallthicknessofCNTsmeasuresanatomthickandthelengthofCNTscanreachseveralmillimeters(mm).
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Appendix1‐A:AdvancedTechnologyManufacturingFrontiers1
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IntegratedOptoelectronics
Photonics,alsoknownasoptoelectronics(OE),isthattechnologyspacewhereinformationsignalscarriedby
electronsareconvertedtophotonsandviceversa(O‐E‐O).Photonstransportinformationintheformof
amplitude,wavelength,andphase—oranycombinationoftheabove.Photonicdevicesareeitheractiveor
passive.Passivedevicesmerelytransporttheinformation‐carryingphotonsfromonelocationtoanother.Active
componentsperformsomefunction—convertelectronsintolight(lasers,displays),convertphotonsintoelectrons
(chargecoupleddevicesensors,avalanchephotodiodes),mergestreamsofdata‐carryingphotons(multiplexors),
separateoutmergedstreamsofdata‐carryingphotons(demultiplexors)andimpartdata on astreamofphotons
(modulators.)
Theapplicationofphotonicscoverssuchdiverseareasasindustriallasers,consumerelectronics,
telecommunications,datastorage,biotechnology,medicine,generalillumination,anddefense.Eachofthese
applicationspaceshasasupplychainandinfrastructurethatstartswithbasicmaterialsandendsatacompleted
product.Alongthischainaresubchainsthatprovidetheindividualcomponentsorsubsystemsthatmakeupthe
finishedproduct.
Akeydynamicinphotonicsistheevolutionfromdiscretephotonicdevicestointegratedsystems.Thisintegration
isdrivenbytheneedforincreasedperformancewhilesimultaneouslyreducingcostandpowerconsumptionto
meettheburgeoningdemandsfortelecommunicationsanddatacommunications—whichthemselvesare
becomingincreasinglyintegrated.
PhotonicIntegrationforTelecommandDatacomm
TelecommunicationsnetworksanddatacentersthatsupportthecommunicationsinfrastructureandtheInternet
willrequireintegratedphotonicstomeetdemandsthatwilloverwhelmthemassiveswitchingcentersthatroute
themessagesanddataaroundthefiberopticnetwork.Thesecenterstypicallycontainthousandsofracksof
electronicrouters,inbuildingsthatcoveracres,andconsumeabout30megawattsofelectricpower.Asnew
mobiledevicesandinternetvideocontentincreasethebandwidthcapacitydemand on thenetwork,theservice
providershavetoincreasethenumberofchannelscarriedbyasinglestrandofopticalfiber.Simplyincreasingthe
electroniccontentofaracktoaccommodateincreasedbandwidthisnotpossiblebecauseoftheassociated
increaseinpowerconsumptionandheatdissipation.Thesolutionliesinphotonicintegration.
9
Photonicintegratedcircuits(PICs)combinemultipleopticandelectro‐opticcomponentsontoachip.Today’sPIC
technologyiscomparabletothatofmicroelectroniclarge‐scaleintegration(LSI)ICsofthe1960s—about200to
300elements on asinglechip.MostofthePICstodayarehybrid—theyconsistofasiliconsubstratewithanumber
ofmonolithicallyintegratedcomponents,andanumberofcomponentsfabricatedfromothermaterials
mechanically,optically,andelectronicallyconnectedtothesubstrate.PICsrequirecomponentsfabricatedfrom
othermaterialsbecausesilicondoesnotsupportalaser.Technologiesandfabricationtoolsareneededthatwould
supportmonolithicintegrationofsiliconwithothermaterialstoenablePICstomovetohigherlevelsofintegration
andtakeadvantageoftheexistingsiliconCMOSinfrastructure.
Thepriceofincreasedbandwidthisincreasedcomplexityandpowerconsumption.Thesystemrequiresmore
componentstoextractandgroomtheelectricalsignalsfromtheseincreasinglycomplexopticalsignalsandconvert
themintoaformthatelectronicprocessorscanmanipulate.EachO‐E‐Orequiresmanydiscrete,single‐function
opticalcomponents,includinglasers,modulators,wavelengthlockers,detectors,attenuators,wavelengthdivision
multiplexers(WDM)andde‐multiplexers.Inatypicalopticaltransportsystem,eachO‐E‐Oconversionmayrequire
uptohalfadozenoptoelectronicoropticalcomponents,andafullydeployed40‐wavelengthWDMterminalnode
mayuseupwardsof120ormorecomponentsinterconnectedby260ormorefibercouplings.Eachofthesefiber
couplingsrepresentscost,signallosses,andapotentialfailurepoint.
9
BikashKoley,“NetworkArchitectatGoogle,”presentationattheOIDAPhotonicIntegrationForum,October6,2009,Santa
Clara,CA.
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Appendix1‐A:AdvancedTechnologyManufacturingFrontiers1
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IntegratedOptoelectronics
Photonics,alsoknownasoptoelectronics(OE),isthattechnologyspacewhereinformationsignalscarriedby
electronsareconvertedtophotonsandviceversa(O‐E‐O).Photonstransportinformationintheformof
amplitude,wavelength,andphase—oranycombinationoftheabove.Photonicdevicesareeitheractiveor
passive.Passivedevicesmerelytransporttheinformation‐carryingphotonsfromonelocationtoanother.Active
componentsperformsomefunction—convertelectronsintolight(lasers,displays),convertphotonsintoelectrons
(chargecoupleddevicesensors,avalanchephotodiodes),mergestreamsofdata‐carryingphotons(multiplexors),
separateoutmergedstreamsofdata‐carryingphotons(demultiplexors)andimpartdata on astreamofphotons
(modulators.)
Theapplicationofphotonicscoverssuchdiverseareasasindustriallasers,consumerelectronics,
telecommunications,datastorage,biotechnology,medicine,generalillumination,anddefense.Eachofthese
applicationspaceshasasupplychainandinfrastructurethatstartswithbasicmaterialsandendsatacompleted
product.Alongthischainaresubchainsthatprovidetheindividualcomponentsorsubsystemsthatmakeupthe
finishedproduct.
Akeydynamicinphotonicsistheevolutionfromdiscretephotonicdevicestointegratedsystems.Thisintegration
isdrivenbytheneedforincreasedperformancewhilesimultaneouslyreducingcostandpowerconsumptionto
meettheburgeoningdemandsfortelecommunicationsanddatacommunications—whichthemselvesare
becomingincreasinglyintegrated.
PhotonicIntegrationforTelecommandDatacomm
TelecommunicationsnetworksanddatacentersthatsupportthecommunicationsinfrastructureandtheInternet
willrequireintegratedphotonicstomeetdemandsthatwilloverwhelmthemassiveswitchingcentersthatroute
themessagesanddataaroundthefiberopticnetwork.Thesecenterstypicallycontainthousandsofracksof
electronicrouters,inbuildingsthatcoveracres,andconsumeabout30megawattsofelectricpower.Asnew
mobiledevicesandinternetvideocontentincreasethebandwidthcapacitydemand on thenetwork,theservice
providershavetoincreasethenumberofchannelscarriedbyasinglestrandofopticalfiber.Simplyincreasingthe
electroniccontentofaracktoaccommodateincreasedbandwidthisnotpossiblebecauseoftheassociated
increaseinpowerconsumptionandheatdissipation.Thesolutionliesinphotonicintegration.
9
Photonicintegratedcircuits(PICs)combinemultipleopticandelectro‐opticcomponentsontoachip.Today’sPIC
technologyiscomparabletothatofmicroelectroniclarge‐scaleintegration(LSI)ICsofthe1960s—about200to
300elements on asinglechip.MostofthePICstodayarehybrid—theyconsistofasiliconsubstratewithanumber
ofmonolithicallyintegratedcomponents,andanumberofcomponentsfabricatedfromothermaterials
mechanically,optically,andelectronicallyconnectedtothesubstrate.PICsrequirecomponentsfabricatedfrom
othermaterialsbecausesilicondoesnotsupportalaser.Technologiesandfabricationtoolsareneededthatwould
supportmonolithicintegrationofsiliconwithothermaterialstoenablePICstomovetohigherlevelsofintegration
andtakeadvantageoftheexistingsiliconCMOSinfrastructure.
Thepriceofincreasedbandwidthisincreasedcomplexityandpowerconsumption.Thesystemrequiresmore
componentstoextractandgroomtheelectricalsignalsfromtheseincreasinglycomplexopticalsignalsandconvert
themintoaformthatelectronicprocessorscanmanipulate.EachO‐E‐Orequiresmanydiscrete,single‐function
opticalcomponents,includinglasers,modulators,wavelengthlockers,detectors,attenuators,wavelengthdivision
multiplexers(WDM)andde‐multiplexers.Inatypicalopticaltransportsystem,eachO‐E‐Oconversionmayrequire
uptohalfadozenoptoelectronicoropticalcomponents,andafullydeployed40‐wavelengthWDMterminalnode
mayuseupwardsof120ormorecomponentsinterconnectedby260ormorefibercouplings.Eachofthesefiber
couplingsrepresentscost,signallosses,andapotentialfailurepoint.
9
BikashKoley,“NetworkArchitectatGoogle,”presentationattheOIDAPhotonicIntegrationForum,October6,2009,Santa
Clara,CA.
...