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for ttl cmos sink loading

A NEW CLASSIFICATION SYSTEM FOR URBAN STORMWATER POLLUTANT LOADING: A CASE STUDY IN THE SANTA MONICA BAY AREA

A NEW CLASSIFICATION SYSTEM FOR URBAN STORMWATER POLLUTANT LOADING: A CASE STUDY IN THE SANTA MONICA BAY AREA

Môi trường

... pollutant loading areas, and transportation land use is a medium loading area These results imply that classification system for stormwater pollutant loading should be developed differently for individual ... stormwater pollutant loadings These maps can be used to develop best management practices for stormwater pollution by identifying the areas that discharge high pollutant loading into receiving ... joint probabilities of the variables and their mutual information Mutual information provides a way of measuring dependency It is zero for completely independent variables but it increases as...
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Chương 5 Giao tiếp giữa TTL-CMOS ppsx

Chương 5 Giao tiếp giữa TTL-CMOS ppsx

Cao đẳng - Đại học

... 5.1.5 CMOS thúc TTL Khi thúc tải mức cao thường V OH (CMOS) > VIH (TTL) dòng nhận IIH (TTL) vài chục uA nên CMOS thúc nhiều tải TTL Khi thúc TTL mức thấp phức tạp tuỳ loại CMOS cũ (4000) khơng thúc TTL ... cho áp lên 3,5V để CMOS “hiểu” Hình 5.1 Giao tiếp TTL với CMOS 5.1.3 TTL thúc CMOS có áp nguồn cao 5V Cũng giống trường hợp trên, mức thấp TTL thúc trực tiếp CMOS mức cao V OH (TTL) có 2,7V đến ... khơng thể thúc CMOS khoảng áp rơi vào vùng bất định ngõ vào CMOS Ta phải dùng điện trở kéo lên, dùng TTL ngõ cực thu để hở cho trường hợp 5.1.4 Giao tiếp CMOS- CMOS Với điện cấp, cổng CMOS thúc cho...
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nvestigation of high k gate dielectrics for advanced CMOS application

nvestigation of high k gate dielectrics for advanced CMOS application

Cao đẳng - Đại học

... be required for mass production by the year of 2015 1.2 Scaling Limits for Conventional Gate Dielectrics 1.2.1 Limitations of SiO2 as the Gate Dielectric for Advanced CMOS Devices For the past ... Physical gate length for low standby power (nm) Maximum gate leakage for high performance (A/cm2) Maximum gate leakage for low operating power (A/cm2) Maximum gate leakage for low standby power ... Scaling and Improved Performance…………………………………………5 1.2 Scaling Limits for Conventional Gate Dielectrics……………………………… 1.2.1 Limitations of SiO2 as the Gate Dielectric for Advanced CMOS Devices….7 1.2.2...
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Novel devices for enhanced CMOS performance

Novel devices for enhanced CMOS performance

Cao đẳng - Đại học

... NATIONAL UNIVERSITY OF SINGAPORE 2006 Novel Devices for Enhanced CMOS Performance ABSTRACT Complementary Metal Oxide Semiconductor (CMOS) transistors form the basis of many integrated circuit products, ... Novel Devices and Architecture for Enhanced Performance CMOS Performance …………… 1.2.2 Channel Strain Engineering ………………………………………………… 1.2.3 Silicon-On-Insulator (SOI) for reduced parasitic capacitance ... Architecture for Enhanced CMOS Performance As explained earlier in equation (1.1), the key to enhancing circuit performance lies in the manipulation of the parameters (C, Vdd and I) In a bid for continual...
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Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology

Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology

Cao đẳng - Đại học

... HIGH-K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III-V MOSFET INTEGRATED WITH HIGH-K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY JIANQIANG LIN (B ... that 40 nm gate line can be achieved by this method, and high performance for small channel length MOSFET is reported As the platform for further study, the limitation of current device and process ... gap (eV) Sadana proposed a CMOS design by using InGaAs for n-channel MOSFET and Germanium for p-channel MOSFET [1.26] Ge has relatively higher mobility than Silicon for both electron and hole...
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Tài liệu Solutions for CMOS VLSI Design 4th Edition (Odd). ppt

Tài liệu Solutions for CMOS VLSI Design 4th Edition (Odd). ppt

Anh văn thương mại

... number for a static path because both the best stage effort and the path effort 33 34 SOLUTIONS decrease for domino Using the same design, the footless domino path has a path logical effort of ... Electrical Effort: h = Cout / Cin 4.7 The delay can be improved because each stage should have equal effort and that effort should be about This design has imbalanced delays and excessive efforts The ... spreadsheet Design (b) is fastest for H = or Design (d) is fastest for H = 20 because it has a lower logical effort and more stages to drive the large path effort (c) is always worse than (b)...
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A guide for preparing, loading , and transporting poultry pdf

A guide for preparing, loading , and transporting poultry pdf

Nông nghiệp

... Protect birds from getting wet during loading by using tarps and eaves troughs Use caution when loading wet birds in moderate conditions See page 21 for loading and transportation temperature ... Closures Be aware of road closures prior to loading so that alternative routes or loading times can be established Listen for current updates and look for alternate routes when necessary are ... PJ Kettlewell, 1998 Physiological stress and welfare of broiler chickens in transit: solutions not problems! Poultry Science, 77: pp 1803-1814 30 C 36 Humidex Guidelines for Loading Poultry For...
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electronic device architectures for the nano-cmos era. from ultimate cmos scaling to beyond cmos devices, 2009, p.440

electronic device architectures for the nano-cmos era. from ultimate cmos scaling to beyond cmos devices, 2009, p.440

Vật lý

... Architectures for the Nano -CMOS Era From Ultimate CMOS Scaling to Beyond CMOS Devices V015tp.indd 9/1/08 5:18:18 PM This page intentionally left blank Electronic Device Architectures for the Nano -CMOS ... record for this book is available from the British Library ELECTRONIC DEVICE ARCHITECTURES FOR THE NANO -CMOS ERA From Ultimate CMOS Scaling to Beyond CMOS Devices Copyright © 2009 by Pan Stanford ... Electronic Device Architectures for the Nano -CMOS Era “ch01” 2008/7/28 Electronic Device Architectures for the Nano -CMOS Era Which are the main showstoppers for CMOS scaling? In this paper, we...
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defect-oriented testing for nano-metric cmos vlsi circuits, 2007, p.342

defect-oriented testing for nano-metric cmos vlsi circuits, 2007, p.342

Vật lý

... 786–792, 1996 22 Defect-oriented Testing for Nano-metric CMOS VLSI Circuits 56 T W Williams, R Kapur, and M R Mercer, “Iddq Testing for High Performance CMOS – The Next Ten Years,” Proceedings ... under control Therefore, for IFA based fault modeling and testing, only the local deformations or defects are taken into account 28 Defect-oriented Testing for Nano-metric CMOS VLSI Circuits ... required for such functions Therefore, reliable system operation over its lifetime became another absolute requirement These developments led to slogans like Design for Quality and Design for Reliability...
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báo cáo hóa học:

báo cáo hóa học:" Development of an in vitro three dimensional loading-measurement system for long bone fixation under multiple loading conditions: a technical description" potx

Hóa học - Dầu khí

... having linear data, during the 3rd loading cycle: 200 to 4000 N for axial compression, 10 to 50 Nm for positive torque, 10 to -50 Nm for negative torque, 10 to 150 Nm for bending To compare the intact ... other than in the direction of loading to occur For axial and torsional loading, unconstrained relative 3D motion across the fracture site was most noticeable for the ostectomy due to definite ... occurred for the intact radius This is illustrated in the torsion loading example which shows detectable CrCa and LM bending rotation for the ostectomy, and negligible CrCa and LM bending rotation for...
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Báo cáo toán học:

Báo cáo toán học: " A virtual infrastructure based on honeycomb tessellation for data dissemination in multi-sink mobile wireless sensor networks" pot

Toán học

... which sensors forward their data towards a common static sink However, deploying one static sink limits the network lifetime as the close neighbors of the sink can become the bottlenecks of the ... the network Multiple sinks deployment helps to spread load over the network, while mobility of sinks reduces the bottleneck problem of static sinks Exploiting multiple, mobile sinks in a WSN, instead ... more critical for data delivery If the sink moves inside its current cell, there is no need for another process since the data will be forwarded to the same neighboring cell until the sink leaves...
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Báo cáo hóa học:

Báo cáo hóa học: " A scalable multi-sink gradient-based routing protocol for traffic load balancing" pot

Hóa học - Dầu khí

... network with two sinks (Coordinates of sinks: (120, 120) and (300, 280)) the least overloaded path as their hop distance to a sink decreases, GLOBAL cannot outperform CPL GLOBAL outperforms SPR by ... traffic load information of a forwarder’s 1-hop neighbor nodes, and (b) protocols that utilize the cumulative traffic load information of sensor nodes over a path from a sensor node to the sink In the ... as a next forwarder, based on their customized forwarding rules In these protocols, however, sensor nodes cannot spread the traffic evenly since there is no way for them to get the information...
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Báo cáo hóa học:

Báo cáo hóa học: " Power allocation, bit loading and sub-carrier bandwidth sizing for OFDM-based cognitive radio" pot

Hóa học - Dầu khí

... their solution form motivates the development of computationally simple, sub-optimum algorithms for the problems posed The proposed strategies for power allocation and bit loading outperform those ... literature Chengshi et al [9] have performed multi-user water-filling for CR More recently, Shaat et al [10] and Bansal et al [11], have presented a Lagrangian formulation for maximizing the sum capacity ... and Huang et al [39] for MM and RM problems, respectively In the CR context, the following work exists in literature: Tang et al [12] have formulated a bit loading problem for multiple SUs, which...
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Báo cáo hóa học:

Báo cáo hóa học: " Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application" pdf

Hóa học - Dầu khí

... LInL The samples were then introduced in an ICP reactive ion etcher (PlasmaLab80Plus-Oxford Instruments, Oxfordshire, UK) to transfer the pattern to the HfO layer through a series of successive ... microscope (FEI NovaNanoSEM 230, FEI Co., Hilsboro, OR, USA) was used for HR-SEM sample examination Crosssectional specimens suitable for HR-TEM were prepared using a focused ion beam (FIB) FEI Quanta ... roughness (s) extracted from × 2-μm AFM images was found to be 0.7 ± 0.01 nm for the as-deposited HfO2 film and 4.9 ± 0.01 for the nanostructured HfO2/GaAs sample Figure depicts a three-dimensional...
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Báo cáo hóa học:

Báo cáo hóa học: " In Situ Loading of Basic Fibroblast Growth Factor Within Porous Silica Nanoparticles for a Prolonged Release" ppt

Hóa học - Dầu khí

... complicated releasing mechanism for the polymers Moreover, the major challenge is to eliminate the use of high temperatures during the drug loading process to polymer nanoparticles For instance, it takes ... 19], which make MSNs an ideal nonviral carrier for gene, and/or drug delivery For instance, Lin and Wang utilized the MSNs with honeycomb structure for delivering DNA and chemicals into plants ... Fig 2b Our efforts are continuously focusing on how to control the initial burst and increase the loading efficiency On the other hand, the biocompatibility of pure MSNs was studied for days by...
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Báo cáo hóa học:

Báo cáo hóa học: " Research Article Bit Loading Algorithms for Cooperative OFDM Systems" pptx

Báo cáo khoa học

... we can formulate the optimization problem as N Preq bn , bn ∈B n=1 G(n) ∗ PT = BIT LOADING In this section, we devise bit loading algorithms without subchannel permutation In this case, for subchannel ... (12) is satisfied, then bit loading operation is complete; otherwise, go to Step The performance of the greedy algorithm, of course, will serve as a bound for the performance of the suboptimal ... reduced by performing subchannel permutation and bit loading separately SIMULATION RESULTS In this section, we present simulation results to compare the performance of the different bit loading algorithms...
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Báo cáo hóa học:

Báo cáo hóa học: " Noise and Spurious Tones Management Techniques for Multi-GHz RF-CMOS Frequency Synthesizers Operating in Large Mixed Analog-Digital SOCs" pdf

Báo cáo khoa học

... injected noise Therefore the usage of a regulator is not needed for the PFD from the forward PSRR point of view However, due to the fact that the required supply voltage for the thin oxide gates ... synthesizer a lower power efficiency is always traded for better spur and phase noise performance This gives one of the fundamental performance limitations for the portable application (battery operated) ... 3–10) even in high fT deep-submicron CMOS processes Therefore only a limited amount of clock waveform squaring is possible Figure 15(a) shows a straight CMOS implementation of the VCO clock buffer...
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Báo cáo hóa học:

Báo cáo hóa học: " A Sigma-Delta ADC with Decimation and Gain Control Function for a Bluetooth Receiver in 130 nm Digital CMOS" pdf

Báo cáo khoa học

... I3) Since there could be no integration for P2, P4, or P6 phases, decimation-by-2 operation is achieved To increase the time available for integrator settling, integrating control signals’ I1, ... switches, transistor sizes are optimized for speed and area Figure shows the noise analysis for the proposed ADC Quantization noise is a dominant noise contributor for this application due to the low ... easily adjusted for different modes or system requirements ACKNOWLEDGMENTS The authors would like to thank B Bakkaloglu for discussion and comments and to W E Kim and H S Kim for support in device...
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Báo cáo hóa học:

Báo cáo hóa học: " Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling" potx

Báo cáo khoa học

... the formulas defined in Table and using the parameters of ITRS roadmap (for 90 nm, 65 nm, and 45 nm) [11] and the existing technologies (for 180 nm and 130 nm) The results are shown in Table For ... realized by cascading two delay lines (DLs) serially, the first for the PPM delay and the second for setting the required time window(s) for the analog block(s) under consideration The input to the ... synchronization, coarse acquisition for timing offset compensation, code-level synchronization, phase offset compensation for the I and the Q branches in the constellation (only for BPSK), (v) tracking to...
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Báo cáo hóa học:

Báo cáo hóa học: " Editorial CMOS RF Circuits for Wireless Applications" doc

Báo cáo khoa học

... Alberta He is also a President of CMOS Emerging Technologies, Inc., a consulting company in Vancouver His research interests are in advanced CMOS devices and circuits for ultra-low-power wireless ... Circuits and Systems (CAS) Society Earlier, he worked for the French telecommunications company ALCATEL, and for IBM He regularly serves as consultant for microelectronics companies He holds one patent ... approaches to traditional RF functions for integrated radios in deep-submicron CMOS processes He currently leads the DRP system and design development for transmitters and frequency synthesizers...
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