expansion joints and devices

Chapter-10-File systems and devices

Chapter-10-File systems and devices

Ngày tải lên : 22/10/2013, 19:15
... groups of rwx: r stands for read permission, w stands for write permission, and x stands for execute permission The three groups represent the permissions for the owner, the group and others respectively ... (I can read and execute the program, and nobody else can anything with it) The permissions for the draft document would be rw-r - (I can read and write, the group can read, and others can’t ... 17:00:47 The Complete FreeBSD (filesys.mm), page 195 195 Chapter 10: File systems and devices FreeBSD devices UNIX refers to devices in the same manner as it refers to normal files By contrast to normal...
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Tài liệu Lab 2.3.7 OSI Model Characteristics and Devices pptx

Tài liệu Lab 2.3.7 OSI Model Characteristics and Devices pptx

Ngày tải lên : 21/12/2013, 19:15
... 2 List the seven layers of the OSI model and the encapsulation unit used to describe the data grouping at each layer Also list the networking devices that operate at each layer, if applicable ... devices that operate at each layer, if applicable Layer # Name Encapsulation Unit or Logical Grouping Devices or Components that Operate at this Layer 2-2 CCNA 1: Networking Basics v 3.0 - Lab 2.3.7...
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Tài liệu Lab 2.3.7 OSI Model Characteristics and Devices docx

Tài liệu Lab 2.3.7 OSI Model Characteristics and Devices docx

Ngày tải lên : 21/12/2013, 19:15
... 2 List the seven layers of the OSI model and the encapsulation unit used to describe the data grouping at each layer Also list the networking devices that operate at each layer, if applicable ... devices that operate at each layer, if applicable Layer # Name Encapsulation Unit or Logical Grouping Devices or Components that Operate at this Layer 2-2 CCNA 1: Networking Basics v 3.0 - Lab 2.3.7...
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zno nanowire growth and devices

zno nanowire growth and devices

Ngày tải lên : 20/03/2014, 13:12
... associated with Mn and Co The most likely candidates in that sense are the absorption bands at 1.9 and eV and the red MCL bands at 1.84 and 1.89 eV The absorption and the MCL bands seem to be closely ... flux and the Ag islands appears to result in surface and subsurface oxygen diffusion in the metal island, perhaps involving the intermediate formation of Ag2O Zn atoms impinging on the Ag island ... absorption bands anywhere but at the bandedge region The first 27 28 Y.W Heo et al / Materials Science and Engineering R 47 (2004) 1–47 band observed with the threshold near 0.75 eV and the second...
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OPTOELECTRONICS ADVANCED MATERIALS AND DEVICES docx

OPTOELECTRONICS ADVANCED MATERIALS AND DEVICES docx

Ngày tải lên : 23/03/2014, 03:20
... parameter and EAO and EZnO are the band-gap energies of compounds AO and ZnO, respectively While adding Mg or Be to ZnO results in an increase in band gap, and adding Cd leads to a decrease in band ... between perfect single crystals and nanoparticles [29-31] as well as to predict and to realize in nanoparticles and perfect bulk crystals new and interesting properties and applications as the advanced ... crystals and nanopar‐ ticles as well as to predict and to realize in nanoparticles and perfect bulk crystals new inter‐ esting properties and applications The long-term ordering of doped GaP and other...
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Bulk Acoustic Wave Theory and Devices pptx

Bulk Acoustic Wave Theory and Devices pptx

Ngày tải lên : 31/03/2014, 16:20
... Acoustic Waves: Theory and Devices hereinafter referred to as the "Work"; and Whereas, the Assignor retains the right to print, publish and sell the Work solely on an on-demand" basis and the Assignee ... eJ%, and BH are unit vectors in the directions of E and H, respectively, and the Poynting vector is (because E and H are orthogonal) P=-EoHo (1.26) Furthermore the E and H fields are in phase and ... 10 and 11)** 1 optics and piezoelectricity acousto-optics (Chapter 4)** (Chapters and 8) acousto-optic interaction (Chapter 9)** + thickness and lateral field coupling constants; single- and...
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JOINTS AND CONNECTIONS

JOINTS AND CONNECTIONS

Ngày tải lên : 08/04/2014, 11:28
... discussed in (4) and (3,does not occur Thus, if for mild-steel plates and rivets, a 1% (4.5) Joints and connections 80 we can disregard the modes of failure discussed in (4) and (5) In the case ... d andf; r = 0.050 m For bolts g and h, r = g C = a C = 0.0902m Then 23 = 4(0.0902)' + 2(0.050)' = 0.0376 m' Now e = 0.225m and P=5OlcN Pe = (0.225) (50 x lo3) = 11.25 x lo3Nm Then 85 Joints and ... bolts and the plates may become excessive; the total bearing load taken by a bolt is Pb, Figure 4.3, so that the average bearing pressure between a bolt and its surrounding hole is Pb td Joints and...
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nanotechnology in medical applications state of the art in materials and devices

nanotechnology in medical applications state of the art in materials and devices

Ngày tải lên : 28/05/2014, 14:35
... protein-chips and labon-a-chip devices are more challenging compared to gene-chips and these devices are anticipated to play an important role in medicine of the future, which will be personalised and ... with understanding these effects and their influence on material properties Nanotechnology aims to exploit these effects to create structures, devices, and systems with novel properties and functions ... and in vivo in dogs (thrombogenicity) and demonstrated reduced thrombogenicity and improved mechanical properties, i.e better recovery to original shape, very good handling characteristics, and...
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báo cáo hóa học: " Understanding and assessing the impact of treatment in diabetes: the Treatment-Related Impact Measures for Diabetes and Devices (TRIM-Diabetes and TRIM-Diabetes Device)" pdf

báo cáo hóa học: " Understanding and assessing the impact of treatment in diabetes: the Treatment-Related Impact Measures for Diabetes and Devices (TRIM-Diabetes and TRIM-Diabetes Device)" pdf

Ngày tải lên : 18/06/2014, 19:20
... internists; and (2) telephone or in-person individual interviews and focus groups of type and type diabetes patients who had used inhaled and pump delivered insulin in either the U.S or Australia, and ... experts and patients received an honorarium for their participation in the interviews Data from all interviews were coded and hand sorted and qualitatively analyzed to identify common themes and ... drug and treatment delivery system is multifaceted To fully understand these impacts, the patient's perceptions of the impact of treatment on functioning and well-being must be identified and...
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Organic Light Emitting Diode Material Process and Devices Part 1 pot

Organic Light Emitting Diode Material Process and Devices Part 1 pot

Ngày tải lên : 19/06/2014, 21:20
... 5, and (b) Iridium polymers and and platinum polymer were irradiated at 462 and 433 nm, respectively (metallopolymers 5, were 0.05 g/L and metallopolymers were 0.5 g/L) Synthesis, and Photo- and ... 10 and 12 and platinum polymers 11 and 13 were irradiated at 462 and 433 nm, respectively (at 0.5 g/L) EL behavior of the metallopolymers EL behavior of devices containing the metallopolymers and ... was efficiently combined to the ligand polymers after polymerization The procedures of the ligand polymers and and metallopolymers 10-13 are shown in Schemes and The conjugated polymer was prepared...
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Organic Light Emitting Diode Material Process and Devices Part 2 pptx

Organic Light Emitting Diode Material Process and Devices Part 2 pptx

Ngày tải lên : 19/06/2014, 21:20
... for (a) devices M, O and R, (b) devices N, P and U, of which the structures are shown in Table (at 4.0, 4.0, 8.0, 8.0, 10.0, and 10.0 V, respectively) The origin of the small luminescnet bands from ... dichloromethane shows the typical allowed bands at 465 and 398 nm, and the much weaker forbidden bands at 347 and 280 nm, respectively, which display vibronic structure and are distinctly shifted to lower ... for DPhDPF, and 364 nm for SDPF, respectively The PL spectrum of the DPF, DPhDPF, and SDPF and films shows blue emission peaks at 421, 422, and 422 nm in solution, and 460, 465, and 465 nm in...
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Organic Light Emitting Diode Material Process and Devices Part 3 doc

Organic Light Emitting Diode Material Process and Devices Part 3 doc

Ngày tải lên : 19/06/2014, 21:20
... Material, Process and Devices (TGA) in N2 at a heating rate of 20 °C/min dendrimers TP1 and TP2 exhibit high glasstransition temperatures (Tg’s) at 142 and 130 °C, respectively, and decomposition ... synthesis, and also for both attaining sufficient solubility and avoiding the use of long alkyl chains The UV-vis absorption and 50 Organic Light Emitting Diode – Material, Process and Devices PL ... 76 and 80 Compared with that of pyrene 76, the absorption spectra of both 79 and 80 were broad and less well-resolved, and the longest-wavelength, -* transition absorption maximum of 79 and...
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Organic Light Emitting Diode Material Process and Devices Part 4 pdf

Organic Light Emitting Diode Material Process and Devices Part 4 pdf

Ngày tải lên : 19/06/2014, 21:20
... consist of two cyclometalating ligands (C^N) and one ancillary ligand By changing the functional groups in the ancillary ligand or introducing a novel ancillary ligand, the photophysical properties ... with polypyridyl ligands was developed a long time ago in the framework of crystal field theory and ligand field theory 76 Organic Light Emitting Diode – Material, Process and Devices using quasi-octahedral ... with 5d-AOs and higher dipole moments Substitution of ligands can influence HOMO and LUMO energies and their mixing with metal 5d-AOs, thus modulating the phosphorescence lifetime and tuning of...
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Organic Light Emitting Diode Material Process and Devices Part 5 ppt

Organic Light Emitting Diode Material Process and Devices Part 5 ppt

Ngày tải lên : 19/06/2014, 21:20
... PHOLEDs devices fabricated for the present study Devices A and B have a conventional multilayer structure containing hole and electron transport and injection, and hole blocking layers with CBP and ... the TCTA and CBP CCL layers devices, the deep HOMO and high LUMO levels of TCTA and CBP block the movement of holes and electrons at the Bebq2:Ir(piq)3/CCL interface Therefore, holes and electrons ... wide band-gap hole and electron transporting layers, narrow band-gap host and dopant materials, and charge control layers (CCL) Bis(10-hydroxybenzo[h] quinolinato)beryllium complex (Bebq2) and...
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Organic Light Emitting Diode Material Process and Devices Part 6 ppt

Organic Light Emitting Diode Material Process and Devices Part 6 ppt

Ngày tải lên : 19/06/2014, 21:20
... the conduction and emission processes in single layer devices, we have fabricated following several devices and investigated We have made devices C and D without Ir(piq)3 dopant and results were ... displayed in Fig 15, both devices C and D (undoped) show J-V characteristics similar to Ir(piq)3 doped devices A and B, respectively Furthermore in our devices A and B, hole and electron injection ... identical devices but with different dopant concentrations lying between 0.5 and wt%; 128 Organic Light Emitting Diode – Material, Process and Devices and, (3) the quenching of both luminance, and...
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Organic Light Emitting Diode Material Process and Devices Part 7 ppt

Organic Light Emitting Diode Material Process and Devices Part 7 ppt

Ngày tải lên : 19/06/2014, 21:20
... ordered film structure, and very high electron mobility has been reported (Tatemichi et al., 2006) On the other hand, NPD and TAPC having triphenyl amine structure are very standard hole transporting ... for OLED devices They show comparably high hole mobility and good film formation Figure shows the hetero-layered structure OFET with top contact and the molecular structures of m-MTDATA and NPD ... m-MTDATA and NPD interfacial layer, and the single layer C60 OFETs on OTStreated, HMDS-treated, and non-treated substrates Also in this case, the ID – VG curves for the hetero-layered devices...
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Organic Light Emitting Diode Material Process and Devices Part 8 potx

Organic Light Emitting Diode Material Process and Devices Part 8 potx

Ngày tải lên : 19/06/2014, 21:20
... Process and Devices devices with BCP their current efficiency significantly increase from 3.7 to 9.6 cd/A, and power efficiency increase from 0.87 to 1.46 lm/W (at 100 cd/m2) for devices without and ... Material, Process and Devices EL spectra were quite understandable (Wu et al, 2005) The highest EL intensity showed the devices with AcacZnBTz followed by those with Zn(BTz)2, Znq2, and Zn(NBTz)2 ... luminance/voltage and efficiency characteristics of four type identical devices with different EML It was established that the current densities and the luminescence decreased and the turn-on voltage of devices...
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Organic Light Emitting Diode Material Process and Devices Part 9 pptx

Organic Light Emitting Diode Material Process and Devices Part 9 pptx

Ngày tải lên : 19/06/2014, 21:20
... Part OLED Processes and Devices Unconventional, Laser Based OLED Material Direct Patterning and Transfer Method 1Applied Seung Hwan Ko1 and Costas P Grigoropoulos2 Nano Tech and Science Lab, Department ... Emitting Diode – Material, Process and Devices Generally, organic materials have strong ultraviolet (UV) and infrared (IR) absorption bands attributed to electronic and vibrational transitions, respectively ... large-area displays, mask lifetime and cleaning, particle contamination, and thermal expansion effects In this chapter, unconventional OLED material direct patterning and transfer methods especially...
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Organic Light Emitting Diode Material Process and Devices Part 10 ppt

Organic Light Emitting Diode Material Process and Devices Part 10 ppt

Ngày tải lên : 19/06/2014, 21:20
... masses of the valence band maximum(VBM) are consistent with the reported good conductivity, and (iv) the predicted indirect band gap and optical band gap of CuBO2 are 3.21 eV and ~5.1 eV, respectively ... giving an indirect band gap of 1.94 eV, with the smallest direct band gap situated at Γ and measuring 3.21 eV Fig GGA+U calculated bandstructure of CuBO2 The top of the valence band is set to eV ... three spectra, as shown in Fig A band gap was observed between the valence band edge in the PES spectrum and the conduction band edge in the IPES spectrum The band gap estimated was about 3.5 eV...
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Organic Light Emitting Diode Material Process and Devices Part 11 doc

Organic Light Emitting Diode Material Process and Devices Part 11 doc

Ngày tải lên : 19/06/2014, 21:20
... Material, Process and Devices (ZITO, 6.1 eV), Ga-In-O (GIO, 5.2 eV), and Zn-In-O (ZIO, 5.2 eV) films composed with In, Sn, Ga, Zn, and O components have particularly interesting transparency and conducting ... N2, H2, and N2-H2 condition, or the insertion of an anode interfacial layer with insulating wide band gap between the HTL and the anode Fig 10 Kelvin probe current for a pristine ITO anode and an ... resistance and work functions of ITO(100 Ω/), ITO(12 Ω/), ZnO, AZO and polyaniline(PANI) films were measured as shown in Table 1.(Guan et al., 2009) And also, the effect that the dopant, solvent, and...
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