equivalent static analysis for robustness design
Electronic, magnetic and optical properties of oxide surfaces, heterostructures and interfaces role of defects
Ngày tải lên :
10/09/2015, 09:11
... at K for STO single crystals reduced for 1, and h 92 Figure 3.12 X-ray diffraction of an as-grown STO film on a LaAlO3 (LAO) substrate 96 Figure 3.13 3D atomic force ... oxygen pressures before and after oxygen-annealing in bar of oxygen gas flow at 600 °C for h (b) PL intensity of the 20 nm amorphous LAO/STO heterostructures fabricated at 10-6 Torr before and after ... °C before and after oxygenannealing in bar of oxygen gas flow at 600 °C for h 137 Figure 4.15 Room temperature sheet carrier density of eight crystalline LAO/STO heterostructures before and...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source
Ngày tải lên :
22/12/2013, 08:58
... conductor having a square cross-section of mm × mm with hole diameter mm for water cooling was used The optimized design parameters for solenoid coil with iron jacket are presented in table The optimized ... Poisson software for (a) mirror magnetic field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating ... standard relations for calculating magnetic field Design, fabrication, and characterization of a solenoid system 463 Table The optimized design parameters for solenoid coil with iron jacket Description...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
Ngày tải lên :
19/03/2014, 16:48
... (b) a bundle layer before ultrasonic cleaning foil in one step produces a blank TiO2 film ready to act as a working electrode for a NT-DSSC, whereas making a blank TiO2 film for a NP-DSSC requires ... respectively For the two-step process, the ATO films were first rinsed with ethanol, dried in air, and annealed at 150 °C for h to remove organic solvents, and were then crystallized at 450 °C for another ... °C for 10 followed by annealing at 450 °C for 30 The surface roughness of ATO films was measured with a surface profiler (R-step; KOSAKA, ET-4000); these films were characterized with parameters for...
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Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
Ngày tải lên :
20/06/2014, 23:20
... application as counter electrodes for DSSCs Our results provided evidence that graphene, SWNTs, and graphene-SWNT composites could perform sufficiently well as counter electrodes for DSSCs Figure Nyquist ... suitable material for application as a counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance of graphene-based ... 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an approximately 60-μm-thick (before melting) surlyn...
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báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot
Ngày tải lên :
21/06/2014, 17:20
... application as counter electrodes for DSSCs Our results provided evidence that graphene, SWNTs, and graphene-SWNT composites could perform sufficiently well as counter electrodes for DSSCs Figure Nyquist ... suitable material for application as a counter electrode in DSSCs among them Based on this finding, in the future, we intend to conduct further studies for improving the performance of graphene-based ... 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an approximately 60-μm-thick (before melting) surlyn...
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báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
Ngày tải lên :
21/06/2014, 17:20
... Therefore, the sidewall of the silicon pillar is pared and transformed into tip (Figure 2b,c,d) Finally, the PR is fully etched away after 10-min etching, and a pyramid-like tip shape is formed ... explain the formation of nanotip array is proposed When increasing the etching time, the photoresist on top of the nanotip is also consumed, and the exposed silicon substrate is etched away to form ... in performing an effective FE [5] A tip with smaller apex can induce higher electrical field and, hence, significantly enhances the emission current [6-7] Various materials are employed to form...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
Ngày tải lên :
09/09/2015, 11:15
... respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 nm, respectively 112 Figure 5.13 (a) Simulated optical generation profile for ... hightemperature requirements for homojunction contact formation (usually temperatures above 800 ºC) and the low-temperature requirement for heterojunction contact formation (usually temperatures ... standard heterojunction solar cell performance Improving Dit directly improves the one-sun solar cell performance 93 Table 5.1 Overview of process parameters for the μc-Si:H(n) and the ZnO:Al...
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Large area plasmonic nanostructures design, fabrication and characterization by laser
Ngày tải lên :
09/09/2015, 11:17
... Chapter High Performance Refractive Index Sensing through the Surface Lattice Resonance of Nanorod Array 105 5.1 Introduction .106 vii 5.2 Design and simulation for high performance sensing ... industry Therefore, it is strongly required to employ a simple design and high-throughput nanofabrication tool for the realization of large area plasmonic nanostructures The designed nanostructures ... RI sensing performance for SLR mode 128 5.5 Summary 129 5.6 References 129 Chapter Tuning Surface Lattice Resonance by Lattice Period of Nanorod Array for Refractive...
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2D and 3d terahertz metamaterials design, fabrication and characterization
Ngày tải lên :
10/09/2015, 08:40
... metamaterials design, fabrication, and characterization from two dimensional (2D) to three dimensional (3D) forms to achieve the resonance tunability by different means A novel 3D ‘metamaterials tube’ design ... size, (c) Hybrid design at core sizes of 24, 28, 32 and 34 µm and a constant gap of µm and (d) Hybrid design at gap sizes of 2, 4, and µm and a constant core size of 32 µm The insert for each image ... Lithography for Large Area Nano/Micro-structure Fabrication M Tang, Z.C Chen, Z.Q Huang, Y S Choo, and M H Hong Applied Optics, accepted (2011) XIV Hybrid Meta-materials Design and Fabrication for Terahertz...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
Ngày tải lên :
10/09/2015, 09:11
... chambers, including the first chamber for VA, the second chamber for surface treatment with SiH4+NH3 or SiH4 only, and the third chamber for HfAlO deposition for either SiH4+NH3 or SiH4 treatment ... grateful for the discussions from many outstanding researchers and graduate students in SNDL Special thanks to Dr Chin Hock Chun for mentoring me during the initial phase of my research for the ... process chambers, including the first chamber for VA, the second chamber for surface treatment with SiH4+NH3 or SiH4 only, and the third chamber for HfAlO deposition 24 ix Fig 2.3 (a)...
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Fabrication and characterization of germanium photodetectors
Ngày tải lên :
10/09/2015, 15:47
... carrier drift velocity and mature design and fabrication technology for optical devices Therefore, integration of high performance III-V photodetectors onto the Si platform by flip-chip bonding or ... intrinsic layer is usually Ge for effective absorption around 1.55 μm , the p+ and n+ region can be formed either by implantation [1.7] or in-situ dope to form p+ and n+ regions for PIN structure [1.8] ... Table 2.2: Summary of performances from selected Ge photodetectors 28 Table 4.1: Comparison of the various photodetectors’ performance indices 69 Table 5.1: Performance comparison of the...
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Fabrication and characterization of composite membranes for gas separation
Ngày tải lên :
12/09/2015, 11:24
... thickness for the fibers heat treated at 200oC for hours before coating……… ….… 168 Fig 7.9 He/N2, O2/N2 selectivity as function of the outer layer thickness for the fibers heat treated at 200oC for ... choosing the membrane formation procedures 1.3.2 Membrane formation and modification 1.3.2.1 Membrane formation Membrane structure, another factor determining the membrane performance for specific separation, ... conditions for the hollow fibers……… .157 Table 7.5 Hollow fiber separation performance as a function of heat treatment before coating……………………………………………………… …159 Table 7.6 Hollow fiber separation performance...
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Fabrication and characterization of luminescent silicon nanocrystal films
Ngày tải lên :
12/09/2015, 11:25
... annealing, better crystallinity is obtained for Si NC films However, ripple structures can be formed due to the surface-scattered waves induced by nonuniformity of the films The pulse number in ... Points selected in AES analysis (b) AES spectra of the nanoparticles (NPs) and the background film formed by laser annealing 68 Fig 3.11 PL from the background Si NC films before and after laser ... [3], a great deal of effort has been made to improve the properties of the PS as LEDs However, there are still some difficulties for the applications of the PS As the PS is formed by electrochemical...
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Fabrication and characterization of memory devices based on organic polymer materials
Ngày tải lên :
12/09/2015, 11:29
... Performance of Device based on 12:1 Mixing Ratio 91 4.3.5 Device Performance under Different Mixing Ratio 96 4.3.6 Device Performance under Different Film Thickness 99 IV 4.3.7 Device Performance ... are promising for Chapter 1: Introduction future molecular size device applications Their attractive features include miniaturized dimensions and the possibility for molecular design through ... prediction of the latest 2006 update International Technology Roadmap for Semiconductor (ITRS), the physical gate length for high performance logic applications will shrink down to nm in the year of...
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Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
Ngày tải lên :
12/09/2015, 11:29
... temperature for sample A4; (c) MR curves for samples A2, A3, A4, and A6 at 4.2 K FIG 3.27 (a) Hall effect for sample A4 at different temperatures; (b) 99 coercivity as a function of temperature for sample ... Normalized R-T curves for both a thin film and a nanowire 42 The inset shows the dependence of resistance on T −1 / for both a thin film and a nanowire FIG 2.14 Normalized MR curves for both thin films ... List of figures FIG 3.4 AFM image for sample A4 67 FIG 3.5 Normalized M-H curves at K for the samples under study 68 FIG 3.6 Temperature dependence of coercivity for sample A5 Insets: 69 M-H curves...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes
Ngày tải lên :
12/09/2015, 11:29
... improved the ion rejection performance for liquid separation, especially for multivalent cations and anions fractionation Moreover, this modified PBI membrane can be utilized for the separation of cephalexin ... the ultimate determining factor for the formation of skin layer [Smolders, 1980] Nowadays, several membrane configurations can be available for liquid separation For example, spiral-wound modules ... membrane repulsion forces on the anions This effect is more evident for the chloride ion than for the sulphate ion, since the latter has a higher charge density, and therefore is rejected by...
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Fabrication and characterization of AIGaN gan HEMTs
Ngày tải lên :
05/10/2015, 22:32
... state-of-the art performance for high output power density and have the potential to replace GaAs-based transistors for a number of high power applications [22] The underlying reasons for the advances ... investigate the feasibility of possible new device structure designs to improve device performance, before implementing these appropriate designs and material parameters to actual wafer growth and ... The wurtzite polytypes of GaN, AlN and InN form a continuous alloy system whose direct bandgaps range from 1.9 eV for InN, to 3.4 eV for GaN, to 6.2 eV for AlN Thus, the III-nitrides could potentially...
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Fabrication and characterization of lateral spin valves
Ngày tải lên :
05/10/2015, 22:32
... LSV measurements for Geometry 62 4.4.2 LSV measurements for Geometry 68 4.5 Non-local Spin Valve Measurements 70 4.5.1 NLSV measurement for Geometry 71 4.5.2 NLSV measurement for Geometry 73 4.5.3 ... also performed for both vi geometries and we found the difference in the magnitude of the spin signal to be more pronounced at low temperatures Non-local measurements were performed for different ... simulations for a rectangular element of width 600nm (a) shows the magnetization for a large negative field, (b) shows the magnetization for a small negative field, (c) shows the magnetization for a...
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Fabrication and characterization of photonic crystals
Ngày tải lên :
05/10/2015, 22:32
... wavelength of the relevant electromagnetic waves for the photonic crystals For example, it is about µm or less for visible light, and is about mm for microwaves Photonic crystals are classified ... particles Colloidal crystals form spontaneously if there is a thermodynamic driving force, for example a sufficiently high particle concentration, making it favorable for the particles to order ... most simple and convenient method of forming a 30 colloidal crystal (an opal film), but it is difficult to form a uniform and flat opal film on a flat substrate For a coated suspension on a hydrophobic...
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Fabrication and characterization of planar hall devices
Ngày tải lên :
05/10/2015, 22:32
... used for deposition of materials for planar hall device 19 Fig 3.2 Mask used for deposition of contact pads for device 20 Fig 3.3 Schematic diagram of the device after aligning 20 Fig 3.4 Steps for ... lithography process for the device fabrication, two optical litho masks were used The first mask used for the patterns for planar hall bar is shown in Fig 3.9 A B C Fig 3.9 Mask for the first layer ... Table 3.1 Sputter parameters for Co/Cu multilayer structure 24 Table 3.2 Sputter parameters for Al bond pads 25 Table 3.3 Wire bonding parameters 26 Table 3.4 Dimensions for the planar hall device...
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