diffusion and ion implantation
Báo cáo hóa học: " A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping" docx
Ngày tải lên :
22/06/2014, 00:20
... Conclusion In conclusion, we have demonstrated a novel method to form p–n junction NW diodes by combining two well- 123 established doping techniques—in-situ doping and ion implantation, in succession ... p–n junction NW after the P ion implantation and removal of the SOG h SEM image of a p–n junction NW 3.2 1013 cm-2, respectively The NWs were tilted by 7° with respect to the impinging ions (Fig ... two-step implantation of phosphorus ions at room temperature was used to obtain a rectangular dopant profile The implantation energies were 45 and 25 keV corresponding to doses of 1.3 1014 and 123...
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A modeling study of ion implantation in crystalline silicon involving monte carlo and molecular dynamics methods
Ngày tải lên :
12/09/2015, 21:02
... contributions of present work 191 8.2 Recommendations for future work: Diffusion studies 197 8.2.1 Diffusion- limited reaction model and simulation method 198 8.2.2 Theoretical diffusion model ... all these processes, ion implantation and dopant diffusion are particularly strongly affected by device miniaturization and remains an active area of study Ion implantation has been a dominant ... tilt and 0° rotation and 5keV 6×1013 atoms/cm2 45° tilt and 45° rotation 83 4.12 Comparison of experimental SIMS data and simulation for P 1keV 5×1013 atoms/cm2 0° tilt and 0° rotation and 5keV...
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Modelling and simulation of ion implantation induced damage
Ngày tải lên :
14/09/2015, 09:22
... oxidation, ion implantation, diffusion and thin film deposition Among these processes, ion implantation and annealing are especially important, since the formation of ultra-shallow junctions is ... activation Understanding of ion implantation induced damage is crucial as it affects final junction properties, such as dopant profile and dopant activation Defects induced by ion implantation are ... understand the impact of a buried oxide interface on defect evolution and dopant diffusion 1.1.2 Modeling and Simulation of Ion Implantation Induced Damage The physical processes, namely ion implantation...
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Báo cáo khoa học: Implication for buried polar contacts and ion pairs in hyperthermostable enzymes pot
Ngày tải lên :
07/03/2014, 05:20
... polar contacts and ion pairs as structural elements related to the thermal stability Because intermolecular and intramolecular polar interactions such as hydrogen bonds [11–13] and salt linkages ... homodimers Their Z score and rmsd values range ˚ ˚ between 14.8 and 7.0 A and between 1.07 and 2.38 A, FEBS Journal 274 (2007) 4012–4022 ª 2007 The Authors Journal compilation ª 2007 FEBS 4015 4016 ... score and Strucural elememts providing hyperthermostability ˚ rmsd values range between 15.3 and 12.4 A and ˚ , respectively The sequence between 1.47 and 1.66 A similarity varied between 35% and...
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Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary pot
Ngày tải lên :
14/03/2014, 23:20
... Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html Diffusion and Use of Genomic Innovations in Health and Medicine ... reserved Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html PLANNING COMMITTEE ON DIFFUSION AND USE OF GENOMIC INNOVATIONS IN ... Copyright © National Academy of Sciences All rights reserved Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html DIFFUSION AND USE...
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Báo cáo khoa học: Chain initiation on type I modular polyketide synthases revealed by limited proteolysis and ion-trap mass spectrometry doc
Ngày tải lên :
16/03/2014, 18:20
... addition, the observation of acyl-intermediates on ATL-ACPL and KS1 demonstrates that the formed acyl-enzyme intermediates are stable under the digestion and analytical conditions used here, and ... concentration of 52 lm The reaction mixture was incubated at 30 °C for min, and a portion was then analyzed by LC-MS To the rest of the reaction mixture propionyl-CoA was added to a final concentration ... the labelled substrates from the ATL [21] Discussion DEBS1-TE, DEBS3 and DKS were subjected to limited tryptic digestion, and the digestion conditions were optimized for each protein so that domains...
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Báo cáo khoa học: Roles of adenine anchoring and ion pairing at the coenzyme B12-binding site in diol dehydratase catalysis pptx
Ngày tải lên :
23/03/2014, 06:20
... 13480195 and 17370038 and Priority Areas 753 to T Toraya, and (C) 14580627 to T Tobimatsu] from the Japan Society for Promotion of Science and the Ministry of Education, Culture, Sports, Science and ... enzyme upon the Ala substitution, and slightly lowered upon the Gln substitution at the b135 residue This might be due to hydrogen bonding and interactions other than the ion pairing being strong ... sequencing of the DNA region encompassing the entire diol dehydratase genes and tac promoter that no unintended mutations had been incorporated during mutagenesis Expression and purification of mutant diol...
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Báo cáo khoa học: Nuclear factor kappa B and tumor necrosis factor-alpha modulation of transcription of the mouse testis- and pre-implantation development-specific Rnf33⁄Trim60 gene pot
Ngày tải lên :
29/03/2014, 00:20
... RNF33 β-actin Fig Confirmation of NF-jB modulation of Rnf33 expression by siRNA knockdown of p65 and p50 (A) p65 and p50 knockdown and Rnf33 transcriptional down-regulation TM4 cells were individually ... Identification of the core promoter elements In the experiments, mutation and deletion luciferase constructs were derived from the F1 fragment that contained the upstream regulation region, exon and ... F1mutI; both the aTATA deletion and the Inr mutation were included in the double mutant F1DaT ⁄ mutI (Fig 3A, left-hand panel) In transfection and luciferase assays, a reduction of 35% or 25% in...
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Báo cáo khoa học: Azotobacter vinelandii rhodanese Selenium loading and ion interaction studies potx
Ngày tải lên :
31/03/2014, 07:20
... maintained at 23 °C, and the protein concentration was kept constant at lM The excitation and emission bandwidths were and nm, respectively The excitation wavelength was set at 286 nm, and the spectra ... Azotobacter vinelandii highlights the evolutionary relationship between the rhodanese and phosphatase enzyme families J Mol Biol 298, 691–704 Ó FEBS 2003 Rhodanese interaction with ions and selenium ... to 12.1 ppm) on conversion of the enzyme from the E to the ES form on addition of thiosulfate ions (E/thiosulfate, : 10) (C) Ó FEBS 2003 Rhodanese interaction with ions and selenium loading (Eur...
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Báo cáo hóa học: " Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application" pot
Ngày tải lên :
21/06/2014, 05:20
... interface and/ or to the surface of control layer by suitably varying the implantation parameters and annealing condition The dependence of implantation energy for the formation and evolution of ... same annealing condition without any Ge+ implantation and were defined as the control sample The formation and evolution of GeNCs have been investigated using high-resolution electron microscopy ... result of ion implantation and annealing There is no significant increase of the HfO2 thickness while the interfacial SiO2 (IL) layer increases from 1.2 to 1.9 nm as a result of implantation and annealing...
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Báo cáo hóa học: " Research Article From Newton’s Equation to Fractional Diffusion and Wave Equations" pptx
Ngày tải lên :
21/06/2014, 05:20
... Equations i Fractional calculus provides a natural interpolation between different equations For instance, we have the fractional interpolation between the wave equation hyperbolic and the diffusion ... open issue to analyze the relation of the different fractionalizations at the discrete and the continuous levels iii The standard diffusion equation The diffusion equation 2.6 appears in very different ... fractional wave and Dirac equations is their behaviour with respect the discrete symmetries: time T and space inversion P 43 This analysis of the fractional wave, diffusion, and Dirac equations,...
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Báo cáo hóa học: " Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy" pot
Ngày tải lên :
21/06/2014, 05:20
... data and wrote the article SS carried out the sample preparation, the measurements and participated to the analysis of the data ER worked on the evaluation of ion- graphene interaction cross sections ... morphological and spectroscopic characterization of graphene on SiO2 Phys Status Solidi C 2010, 7:1251 14 Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiation and defect formation in ... modulating bias between the substrate and the tip locally induces a shift of the graphene quasi-Fermi energy EF in the conduction band, and, hence, an accumulation of electrons at the SCM Electronic...
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Báo cáo hóa học: " Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy" potx
Ngày tải lên :
21/06/2014, 06:20
... data and wrote the article SS carried out the sample preparation, the measurements and participated to the analysis of the data ER worked on the evaluation of ion- graphene interaction cross sections ... morphological and spectroscopic characterization of graphene on SiO2 Phys Status Solidi C 2010, 7:1251 14 Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiation and defect formation in ... modulating bias between the substrate and the tip locally induces a shift of the graphene quasi-Fermi energy EF in the conduction band, and, hence, an accumulation of electrons at the SCM Electronic...
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Báo cáo hóa học: " Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing" potx
Ngày tải lên :
22/06/2014, 18:20
... proton implantation, the QD GS luminescence peak (P10 ) from the implanted region is blue shifted with respect to peak P1 from the un-implanted region Under the implantation and annealing conditions ... interdiffusion due to background (grown-in) defect levels, whereas the shift between the annealed only device and device annealed after implantation is due to implantation induced differential band ... region of the device structures annealed with and without implantation For the un-implanted region, the QD ground state (GS) luminescence peaks at 1015 nm (P1) Due to enhanced interdiffusion...
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ION IMPLANTATION potx
Ngày tải lên :
27/06/2014, 00:20
... involve ion implantation This book presents a collection of chapters which address novel aspects of ion implantation: beam manipulation and modification, beam-solid interactions, physical and chemical ... Spatial resolution of ion implantation and its limiting factors In the process of ion implantation, the spatial resolution is defined as the precision in the final position of an implanted ion in the ... understanding of beam-solid interactions, applications to new materials, and the recent developments to use implantation for nanostructure formation point to new directions for ion implantation...
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Báo cáo y học: " Membrane diffusion- and capillary blood volume measurements are not useful as screening tools for pulmonary arterial hypertension in systemic sclerosis: a case control study" pptx
Ngày tải lên :
12/08/2014, 14:20
... and SE are shown Correlation between hemodynamic parameters of PAH and Dm and Vc values No relations between hemodynamic parameters of pulmonary hypertension and Dm or Vc were found Correlations ... our laboratory Dm and Vc values outside the 95% CI, calculated with the reference equations using parameters height, age and gender, and the reference equation's standard deviations, were considered ... =pulmonary arteThehypertension percentage(r predicted vasculardiffusion The relation between the ratio of the pulmonary capillary blood volume as percentage of predicted and the diffusion capacity of the...
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Môn quản trị chất lượng: Innovation, diffusion and adoption of total quality management (TQM)
Ngày tải lên :
04/06/2015, 10:47
... innovation change process, creativity leads to invention, and the first introduction or implementation of an invention is innovation, which could lead to adoption Adoption results from diffusion ... generation, adoption and implementation, and incorporation of new ideas and practices (Axtell et al 2000; Van de Ven et al., 1989) Innovation is the application of ideas, concepts and designs to ... process and activities involved in getting the innovation to the end-users, who most of the time are organizational practitioners (Ehigie and Babalola, 1995), is referred to as diffusion The decision...
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Application of ion implantation to the fabrication of GAN based devices
Ngày tải lên :
11/09/2015, 14:24
... 14 CHAPTER IMPLANTATION BACKGROUND AND CHARACTERIZATION TECHNIQUES 2.1 Advantages of ion implantation 17 2.2 Ion implantation range and distribution 18 2.3 Damage and post -implantation annealing ... concentration contour without implantation, (b) electron concentration contour with implantation, (c) I-V characteristics without implantation, and (d) I-V characteristics with implantation 117 ... doping process, and it can be included in the semiconductor process technology and can be designed for specific applications 2.2 Ion Implantation Range and Distribution Ion implantation is the process...
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Carbon rich silicon (si1 ycy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
Ngày tải lên :
12/09/2015, 09:28
... suppression of boron diffusion [19-21] and elimination of implantation EOR defects [22, 23] in the presence of carbon The combined effects of dopant diffusion suppression and defects elimination ... semiconductor and Group III elements such as boron and indium for p-type semiconductor Dopant incorporation may be achieved mainly through a diffusion process or ion implantation Ion implantation remains ... understand the mechanism behind boron diffusion This section first covers an overview on the kinetics behind boron diffusion, and then followed by discussions on the suppression of boron diffusion...
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