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acronyms abbreviations and conventions

Study of drop on demand inkjet printing technology with application to organic light emitting diodes

Study of drop on demand inkjet printing technology with application to organic light emitting diodes

Cao đẳng - Đại học

... useful discussions and writings on the research, and for their entertaining conversations over coffee Finally I am grateful to my family and close friends for their blessings and moral support ... fabricated by means of drop-on-demand inkjet printing technology and to compare with spin-coated OLED devices (3) To investigate and characterize drop-on-demand inkjet printed droplet features ... Jerry Fuh Ying Hsi and A/Prof Loh Han Tong, for their valuable guidance, scientific advice and strong encouragement throughout the entire duration of my research This Ph.D degree and dissertation...
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Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source

Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source

Hóa học - Dầu khí

... conductor, water pressure drop and flow, the inlet and outlet connections were provided Total five inlet and five outlet connections were provided The water flow rate liter/min and pressure 3·5 kg/cm2 was ... M, Ando L, Guo X H, Gobin R, Ferdinand R 2004 Status of the Trasco intense proton source and emittance measurements Rev Sci Instrum 75(5): 1423–1426 Ciavola G, Celona L, Gammino S, Presti M, Ando ... field, and (b) flat magnetic field are shown in figure The calculation was also performed analytically (Montgomery 1966) using standard relations for calculating magnetic field Design, fabrication, and...
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fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

fabrication and characterization of anodic titanium oxide nanotube arrays of controlled

Vật lý

... duration of anodization and F- Figure SEM images of ATO NT after treatments with TiCl4: (a) and (c) top and side views with annealing temperature 350 °C; (b) and (d) top and side views with annealing ... two standard errors b Additional component in electrolytes A-D contains guanidinium thiocyanate (GuNCS, 0.1 M) in a mixture of acetonitrile and valeronitrile (volume ratio 15/1 for A and B, and ... Gratzel ¨ and co-workers,21 was designed for both front- and backilluminated NP-DSSC devices The large concentration of I2 and lack of Li+ in electrolyte C lead to the decrease in both JSC and VOC...
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Báo cáo hóa học:

Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc

Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... Aubonne, Switzerland) with a concentration of 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an...
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báo cáo hóa học:

báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot

Hóa học - Dầu khí

... contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging of the solar cells SH and YK helped design the experimental study and advised on the project MJ ... the surlyn polymer foil and a cover glass The deposited SWNTs, graphenes, and carbon composites were characterized by field-emission scanning electron microscopy [FE-SEM] and ultraviolet-visible ... Aubonne, Switzerland) with a concentration of 0.5 mmol/L in ethanol for a period of 36 h at room temperature After that time, the TiO2 electrode and counter electrode were sandwiched with an...
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báo cáo hóa học:

báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt

Hóa học - Dầu khí

... Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array Chi-Chang Wu*1,2, Keng-Liang Ou1,2, and Ching-Li Tseng1 Graduate Institute of Biomedical Materials and Tissue ... completely and a nanotip with pyramid-like shape is developed The field emission property was measured, and the turn-on field and work function of the ultra-sharp nanotip was about 5.37 V/µm and 4.59 ... 1,000 V and measured the emission current Results and discussion The progress of transformation of the tips and photoresist at different etching time is displayed in Table From the eagle-view and...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells

Kỹ thuật - Công nghệ

... Al-coated substrate and (ii) standard μc-Si:H(n) and ZnO:Al thickness on an Al-coated substrate For the DBR stack, the μc-Si:H(n) and ZnO:Al layer thickness is chosen as 69 nm, and 142 nm respectively ... intrinsic aSi:H, µc-Si:H(n) and ZnO:Al are 3, 69 and 142 nm, respectively, for the conductive DBR For the standard case, the thicknesses for a-Si:H(n) and ZnO:Al are 20 and 80 nm, respectively ... reported bandgap of amorphous silicon (~1.7 eV) against that of crystalline silicon (1.1 eV), it follows that there is a larger band offset (~0.45 eV) at the valence band edges and a smaller band offset...
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Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors

Cao đẳng - Đại học

... MOS-HEMTs with and without in situ VA and SiH4 treatment The number of the measured devices with and without in situ VA and SiH4 treatment are 29 and 23, respectively With in situ VA xiii and SiH4 ... wafer and Si (111) substrate removal, and BCB stands for benzocyclobutene (c) GaN/AlGaN buffer bonded to a glass wafer (d) Final device structure after releasing the carrier wafer G, S and D stand ... Ga-ON and Ga-N bond energies are located at 20 and 19.6 eV, respectively (a) Ga-ON peak is observed for the sample without VA and SiH4 treatment, and (b) is absent for the sample with VA and SiH4...
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Fabrication and characterization of germanium photodetectors

Fabrication and characterization of germanium photodetectors

Cao đẳng - Đại học

... high stand-by power consumption thus making Ge MSM photodetectors unfavorable and not practical Due to the narrow bandgap and strong Fermi-level pinning of the metal/Ge interface at valence band, ... Temporal impulse response of LPD and VPD at 1V, 3V, and 5V reverse bias Inset shows the 3dB bandwidth of the devices 69 Fig 4.13: Probing pads for photodetectors bandwidth measurement ... carrier-transit-time-limiting bandwidth and efficiencies of normal incidence PIN Ge photodetector 25 Fig 2.4: Schematic of a waveguide-fed photodetector 27 Fig 2.5: Bandwidth and responsivity...
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Fabrication and characterization of composite membranes for gas separation

Fabrication and characterization of composite membranes for gas separation

Tổng hợp

... husband, Feng Zhao, for his unwavering and unconditional love and support My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement and support ... adjustment of syngas ratios and recovery of hydrogen from nitrogen (ammonia production) and hydrocarbons (refinery processes) (Ho and Sirkir, 1992; Kesting and Fritzsche, 1993; Paul and Yampol’skii, 1994) ... Spillman and Sherwin, 1990; Paul and Yampol’skii, 1994; Mulder, 1996): ease of installation and operation, size and weight efficiency, potentially low energy consumption, environmentally benign and...
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Fabrication and characterization of luminescent silicon nanocrystal films

Fabrication and characterization of luminescent silicon nanocrystal films

Tổng hợp

... memories include dynamic-random-access memory (DRAM) and flash memory DRAM allows fast write and erase However, its data retention is limited by junction and transistor leakages and thus frequent refresh ... in physics and chemistry Research work has been focused on the unique structures, stability, optical and electronic properties, and chemical reactivity of Si NCs, both in free space and on surfaces ... guidance and encouragement all through the course of my PhD study His perseverance and diligence are outstanding examples to me I am deeply indebted to my co-supervisors, Professors Wu Yihong and...
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Fabrication and characterization of memory devices based on organic polymer materials

Fabrication and characterization of memory devices based on organic polymer materials

Tổng hợp

... mainstream memory technologies include dynamic random-access memory (DRAM), static random-access memory (SRAM), and flash memory (NAND and NOR) DRAM is a random access memory that stores each bit of ... of “0” and “1”, and memorize the state Memories can be based on mechanical, magnetic, optical, biological and electronic technologies Electrical memory is used extensively in computers and portable ... Units and Europium Complex 62 3.1 Introduction 62 3.2 Experiment 63 3.2.1 Preparation and Characterization of the PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and...
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Fabrication and characterization of nanostructured half  metals and diluted magnetic semiconductors

Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors

Tổng hợp

... 1994 23 J M D Coey and S Sanvito, “Magnetic semiconductors and half-metals”, J Phys D: Appl Phys 37, pp 988-993, 2004 24 S P Lewis, P B Allen and T Sasaki, “Band structure and transport properties ... A1, A2, A3, A4, A6 and bulk Ge 66 The dotted lines indicate the peak positions of amorphous Ge and GaAs substrate at the position of 275, 267 and 292 cm-1, Ge nanocrystal and bulk Ge at the position ... ratio [8] Interfacial scattering is dependent on the bandstructure of FM and NM metals at the Fermi level If the bandstructure between FM and NM matches one of the spin states, a lower resistance...
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Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Fabrication and characterization of the ultrafiltration and nanofiltration membranes

Tổng hợp

... Santoso Yohannes Ervan and Ms Natalia Widjojo for their assistance and generous suggestions; Mdm H J Chiang, Mdm S M Chew and Mr K P Ng from the Department of Chemical and Biomolecular Engineering ... Wang, my parents and my family for their endless love, encouragement and support that enable me to continue my academic pursuing i Fabrication and Characterization of Ultrafiltration and Nanofiltration ... geometric standard deviation (σp) and the molecular weight cut off (MWCO) of PBI membrane fabricated from same polymer .152 x Fabrication and Characterization of Ultrafiltration and Nanofiltration...
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Fabrication and characterization of AIGaN gan HEMTs

Fabrication and characterization of AIGaN gan HEMTs

Tổng hợp

... layer and the channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities of the electrons and holes, and NA and ND are the densities of the ionized donors and acceptors, ... conduction and valence band edges occur at the heterointerface For the HEMT, the wide-bandgap material, for example AlGaN, is ndoped with Si donors The added charges bend the band edges and create ... ‘subband’ The subbands can be grouped into ladders with respect to the bulk conduction band minimum from which they originate Each subband energy level is found from the solution of (2.9) and...
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Fabrication and characterization of lateral spin valves

Fabrication and characterization of lateral spin valves

Tổng hợp

... Leong and Mr Wong Wai Kong for their technical support and help Last but not least, I would also like to thank all those who have helped me in one way or another and whose support and understanding ... studied for copper and aluminum Different types of lateral spin valve geometries were fabricated and characterized and an optimum geometry which showed good switching characteristics and large spin ... the spin injector and detector in order to study the spin relaxation lengths in copper and aluminum The spin relaxation lengths of copper and aluminum at 20 K were found to be µm and 300nm, respectively...
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Fabrication and characterization of photonic crystals

Fabrication and characterization of photonic crystals

Tổng hợp

... Acknowledgements First and foremost, I thank my supervisor, A/Prof Liu Xiang Yang and co-supervisor, A/Prof Ji Wei, and Dr Zhang Keqin for their invaluable guidance and advice throughout my entire candidature ... [35] B T Holland, C F Blanford, and A Stein, Science 281, 538-540 (1998) [36] B T Holland, C F Blanford, T Do, and A Stein, Chem Mater 11, 795-805 (1999) [37] J E G J Wijnhoven and W L Vos, Science ... the band gap and would transmit 100% of the light at other wavelengths At any given angle of incidence there will be such gaps In the case of a complete band gap the reflected wavelength bands...
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Fabrication and characterization of planar hall devices

Fabrication and characterization of planar hall devices

Tổng hợp

... Dau, and Armando Encinas, Sensors and Actuators, 81, (2000) Chapter Theory Chapter Theory In order to develop ultra sensitive sensor for data storage applications, it is important to understand ... Fundamental and Applications”, Hard covered, 1995 [2] W Thomson., Proc R Soc London 8, 546 (1857) [3] B Dieny, M Li, S.H Liao, C Horng, and K Ju, J Appl Phys., 88, pp 4140-4143 [4] Shan X Wang and Alexander ... STRUCTURES 5.1 Overview 68 5.2 Experimental Procedure and Measurement Set up 68 5.3 Theory 69 5.4 Results and Analysis 70 5.4.1: Experimental Results and Analysis for [Co (10 nm)/ Cu (tCu) / Co (10...
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Fabrication and characterization of tunneling field effect transistors (TFETs)

Fabrication and characterization of tunneling field effect transistors (TFETs)

Tổng hợp

... band to band tunneling BBTBT Material related parameters for band to band tunneling xi CBTBT Material related parameters for band to band tunneling Eg Material band gap Ev,1, EFp,1 Valence band ... material band gap plays an important role in determining the band-to-band generation rate Utilizing a material with a smaller band gap could greatly increase the band-to-band generation rate and thus ... band gap alignment should enhance band-to-band tunneling when a tunneling FET is turned on By fulfilling the abovementioned requirements, the band-to-band tunneling rate could be enhanced, and...
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