1 1 lineshapes in solid state spectroscopy
Advances in Solid State Part 2 pdf
Ngày tải lên :
21/06/2014, 06:20
... gain is − Av = A1 * A2 = gm9 (gm19 ||rO 11 )gm5 (rO ||rO ) (29) The proposed transconductor is shown in Fig M 16 M 12 M 11 M5 M6 I out1 M9 VBias M 15 I out M3 M4 VC M 13 M7 Vin1 M1 M M 10 Vin ... tradeoff between wide linear input range and higher transconductance which is mainly determined by a resistor I out I out1 Vin1 M1 M2 I SS (a) I out I out1 Vin Vin1 M1 Vin M2 I SS I SS (b) Fig ... and second stages exhibit gains equal to − A1 = gm9 (gm19 ||rO 11 ) (27) A2 = gm5 (rO ||rO ) (28) 35 Transconductor VBias M 11 M5 I out1 M3 M9 VBias1 M13 VC M1 M Vin1 Fig Proposed triode transconductor...
- 30
- 306
- 0
Advances in Solid State Part 5 doc
Ngày tải lên :
21/06/2014, 06:20
... respectively N1 1. 002 1. 005 1. 010 1. 015 1. 020 1. 025 1. 030 1. 000 12 8.6 4.8 7.9 14 21 27 0.995 12 8.6 4.3 2.3 1. 3 1. 1 4.0 N2 0.990 12 8.5 4.2 1. 8 0.9 1. 7 2.4 0.985 12 8.5 4 .1 1.6 1. 0 2.4 3.7 0.980 12 8.5 ... illustrated in Fig 19 12 4 Advances in Solid State Circuits Technologies 10 σ = 0.0 σ = 1. 12e-8 D ispe r sio n (ps/km /nm ) σ = 3.69e-8 -5 -10 -15 1. 3 1. 35 1. 4 1. 45 1. 5 1. 55 1. 6 1. 65 1. 7 1. 75 1. 8 wavelength ... 400 300 200 10 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6 wavelength(um) 1. 7 1. 8 1. 9 Fig 11 Dispersion Length vs Wavelength at λ0 = 1. 5, 1. 55 μ m In the following, the nonlinear effect length for mW input power...
- 30
- 308
- 0
Advances in Solid State Part 7 potx
Ngày tải lên :
21/06/2014, 06:20
... 5gm 200 4gm 18 0 3gm 16 0 2gm 1gm 14 0 ωt (MHz) ωt (MHz) 12 0 13 0 90 50 10 0 80 60 40 20 10 45 65 85 10 5 Ibias (μA) (a) 12 5 14 5 16 5 18 5 20 30 40 50 60 70 80 90 10 0 11 0 Ibias (μA) (b) Fig 17 Experimental ... realized in 90 nm technology 18 6 Advances in Solid State Circuits Technologies RESET current (μ A) 400 200 17 0 80 18 0 60 80 15 0 400 14 0 200 13 0 00 10 00 12 80 11 0 60 400 10 0 90 10 00 12 0 00 60 ... and beyond, Solid- State Electronics 52(9): 14 67 – 14 72 19 2 Advances in Solid State Circuits Technologies Thomas, C B., Rogers, B D & Lettington, A H (19 76) Monostable switching in amorphous...
- 30
- 261
- 0
Advances in Solid State Part 8 potx
Ngày tải lên :
21/06/2014, 06:20
... N/PMOS devices." Solid State Electronics 49 (12 ) :19 25 -19 32.[doi :10 .10 16/j.sse.2005.08. 016 ] [19 ] Jiang, L.,Yang, X., Wang, J.J., 20 01 Simulation models of ESD event in ICs Solid- State and Integrated-Circuit ... - Value for electron 9.85 10 5 9.85 10 5 9 10 16 Value for hole 1. 629 10 6 1. 354 10 6 1. 5 10 17 Mentioned in Eq Eq. (13 ) Eq. (13 ) Eq.(5) Eq.(4) Table Parameter set in the simulation Actually, traditional ... 202 Advances in Solid State Circuits Technologies Fig Doping profile of LSCR Total Concentration PSUB 1 10 15 NWELL 3.7 10 17 PWELL 2.6 10 17 N+ 5 .1 10 20 P+ 2.4 10 20 Table Total concentration...
- 30
- 266
- 0
Advances in Solid State Part 9 ppt
Ngày tải lên :
21/06/2014, 06:20
... μ R 11 R12 ) + ⋅ S ( μ R9 R10 ) S ( μ R 11 R12 ) + S ( μ R9 R10 ) (20) ( 21) (22) where the membership of output fuzzy sets for control rules R1R4, R2R3, R5R7, R6R8, R9R10, and R11R12 are obtained ... 45 45 Phase Margin (deg) 83.7 10 9 57.5 77 .1 Unity-Gain Frequency (UGF) (kHz) 27 .1 33.8 24.5 28 .1 Gain Margin (dB) 35.7 31 18.2 21. 9 Gain Margin Frequency (kHz) 623.6 918 .3 94.6 18 4.6 Source Follower ... , p hvp 01 = , z hvn 01 = m , hvn 01 , R 1C Cgs , hvp 01 ro,Ibias Cgs , hvn 01 1+g m,hvn01R' R' = , pf = , (Cgs , hvn 01 + C L )R' C 1R 1R (4) where gm,hvp 01, gm,hvn 01, Cgs,hvp 01, Cgs,hvn 01 are the...
- 30
- 230
- 0
Advances in Solid State Part 10 pptx
Ngày tải lên :
21/06/2014, 06:20
... Chip micrograph Received binary data 11 0 011 011 1 010 010 0 010 110 011 011 1 010 010 0 010 110 011 011 1 Negative 10 0mV 1ns output 62GHz 5Gbps input pulse 200ps -10 500mV |S 11| [dB] S11dd -20 -30 50 60 65 Eye ... Micrograph of the pulse receiver Binary data 2Gbps 011 010 1 0 010 110 10 10 010 11 010 1 0 010 110 10 10 01 60GHz input pulse (VIN) Negative output of the receiver (VM) Fig 35 Receiver input and output waveforms ... Radio 1Gbps 313 mV 313 mV 2Gbps 0.5ns 1ns Fig 36 Eye diagram with 2 31- 1 random bits of data at and 2Gbps data rates Bit Error Rate （BER) 10 0 2Gbps 1Gbps 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 -30 -15 -25...
- 30
- 315
- 0
Advances in Solid State Part 11 potx
Ngày tải lên :
21/06/2014, 06:20
... doses of 1, 5, 7, and 10 x1 011 cm-2 generate accepter concentrations of 1. 5, 1. 9, 2 .1, and 2.5x1 015 cm-3 at 3-μm deep portion between two adjacent trenches It is noted that even small increase in the ... (20 01) A 1. 5W Class-F RF Power Amplifier in 0.2µm CMOS Technology, in The 20 01 IEEE International Solid- State Circuits Conference (ISSCC) Digest of Technical Papers, pp 15 4 -15 5, February 20 01, ... cell innodations are divided into three phases Phase I (1K→1M): Shrinkage of planar area of memory cell together with the decrease in capacitor insulator thickness Thinning of the insulator finally...
- 30
- 377
- 0
Advances in Solid State Part 12 pot
Ngày tải lên :
21/06/2014, 06:20
... performance of transistor in LSI, continual scaling has been achieved since early 19 70’s Sizes of transistors in products measured 12 μm in 19 70 and around 45 nm in 2009 The scaling of device size has ... and ACTUATORS A: PHYSICAL, A 111 , pp 310 - 316 Sunami, H (2008-a) The Role of the Trench Capacitor in DRAM Innovation, IEEE Solid- State Circuits Society News, Vol 13 , No .1, pp 42-44 Sunami, H (2008-b) ... General Research Funds (GRF) No CityU 11 2608 References [1] Moore, G.E (19 75) Progress in digital integrated electronics in Electron Devices Meeting, 19 75 International [2] Chau, R.; Datta, S.;...
- 30
- 233
- 0
Advances in Solid State Part 13 pptx
Ngày tải lên :
21/06/2014, 06:20
... Emitter Base Collector Etching-stop Sub-collector InGaAs InGaAs GaAs InGaP GaAs GaAs InGaP GaAs 45 45 13 0 40 10 0 750 20 600 1 10 19 1 10 19 5 10 18 3 10 17 4 10 19 1 10 16 5 10 18 5 10 18 S.I GaAs substrate ... is 2 10 0 μm2 with a drain-to-source spacing of μm Source GaAs 60 nm n − In0 .49Ga0.51P 70 nm 10 17 cm−3 i -In0 .15 Ga0.85As Channel Layer 14 nm n − InGaP 18 nm 1. 2 × 10 18cm−3 i − InGaP nm Drain Gate ... counts 10 10 Ga In 10 O 10 10 0.00 0.02 0.04 0.06 Depth (μm) 0.08 0 .10 (a) Secondary ion counts 10 o as grown (50 C, h oxidation) P 10 10 Ga 10 In 10 O 10 0.00 0.02 0.04 0.06 Depth (μm) 0.08 0 .10 ...
- 30
- 265
- 0
Advances in Solid State Part 14 potx
Ngày tải lên :
21/06/2014, 06:20
... COP number(/wafer) 400 300 200 10 0 (a) 300 200 10 0 0 0 .11 ~0 .12 0 .12 ~0 .13 0 .13 ~0 .18 0 .18 ~0.25 Size(um) (b) GCZ 0 .11 ~0 .12 0 .12 ~0 .13 0 .13 ~0 .18 0 .18 ~0.25 Size(um) Fig 18 Density and size profiles of ... Advances in Solid State Circuits Technologies Three p-type GCZ silicon crystal ingots with different germanium concentrations ([Ge]s) (10 15cm-3, 10 16cm-3 and 10 17cm-3 in the head portions while/and 10 16cm-3, ... of light germanium doping on thermal donors in Czochralski silicon wafers Materials Science in Semiconductor Processing, 9, 1- 3, 11 0 -11 3, 13 69-80 01 Fukuda, T., & Ohsawa, A (19 92) Mechanical strength...
- 30
- 268
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 2 docx
Ngày tải lên :
21/06/2014, 10:20
... 14 13 67-72 10 2.25 1- 6 19 13 4.5±0.5 11 405 4.8 13 18 - 21 5.3±0.5 7.4 5; 12 -15 1. 4-4.2 16 2.5 17 1. 6 18 19 1; 2.3 19 1 19 0. 51 20 2.3 19 82 21 20 0.6 21 20 1; 2.3 19 21 20 0.74 1 49 8.7 21 0.68 ... 18 2; 19 MOC04 21 1; 2; 19 MOC10 28 2; 19 ; 26 FR–5 21 1; dV V dГ κ α0 ξ αT |Q| dn/dT P 10 -7/K 10 -7/К 10 -6/К 10 -6/К 10 -3 /K W/K/m 10 -3 /cm 15 16 3.5 94 15 17 13 *) 20 15 17 13 *) 2.2 4.4±0 .1 14 ... see Fig 51 Faraday Isolators for High Average Power Lasers m 1 0.56 0.48 ∞ 1/ 2 0 .13 7 0 .11 1 0.087 1/ 12 0.042 0.0265 0. 014 5 1/ 80 0.268 0 .15 8 0.092 1/ 12 0. 017 7 0.00 21 10−5 0. 012 0.0 017 10 −5 du 0.046...
- 40
- 296
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 4 doc
Ngày tải lên :
21/06/2014, 10:20
... 200 13 3 10 d.f 1 1 0 .1 Pavg [W] 1. 725 1. 725 1. 5 41 1.38 0 .10 5 Ep [mJ] 1. 725 4. 31 7.7 10 .35 10 .5 τp [ns] 14 6 10 1 70 46.8 22 Pp [kW] 11 .8 42.7 11 0 2 21 447 Table Results of Q-switching experiments; ... 70A Pump Energy 1. 26 J 1. 26 J 1. 26 J 1. 26 J 1. 26J +1. 26J +1. 26J +1. 26J Calculated Output Beam quality Brightness energy MX M Y2 m J /( m ⋅ s te r ) 12 4.7 mJ 13 1.2 mJ 11 5 mJ 12 8.6 mJ 5.49 5.62 5.24 ... Vol 4, pp 863-867 11 8 Advances in Solid- State Lasers: Development and Applications Koechner, W (19 96) Solid- State Laser Engineering Springer Verlag, ISBN 3-540-60237-2, Berlin Kudryashov, I.,...
- 40
- 408
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 5 docx
Ngày tải lên :
21/06/2014, 10:20
... 11 95.287863 3065830 11 95.287865 11 95.287862 310 4637 Initial estimation of L by means of sweeping wavelength from state to 2: 11 95.205502 mm Absolute distance, L, finally determined by averaging ... generator with a working laser ~ 20 nm 10 -10 ~ 10 -11 20 mW
- 40
- 267
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 6 pot
Ngày tải lên :
21/06/2014, 10:20
... Winter, F (2007) Laser cleaning of optical windows in internal combustion engines, Opt Eng vol.46, no .10 , pp .10 43 01- 1 to 8, Oct 11 High Gain Solid- State Amplifiers for Picosecond Pulses Antonio ... Advances in Solid- State Lasers: Development and Applications The amplification stage setup is shown in detail in Fig 11 The seed emerging from the pulse picker is injected into a grazing-incidence single-pass ... Stein, 19 65; Degnan, 19 95; Xiao & Bass, 19 97; Zhang et al., 19 97; Chen et al., 20 01; Pavel, 20 01; Patel & Beach, 20 01) But there 19 7 Micro -Solid- State Laser for Ignition of Automobile Engines...
- 40
- 239
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 10 pdf
Ngày tải lên :
21/06/2014, 10:20
... “Nonlinear temporal diffraction and frequency shifts resulting from pulse shaping in chirped-pulse amplification systems”, Opt.Lett Vol.20, pp 11 63 -11 65 (19 95) Martinez O.E., (19 86), “Grating ... J.Opt.Soc.Am.B, Vol .12 , No.7, 13 43 -13 62 (19 95) Wefers M.M., Nelson K.A., (19 96) “Space-time profiles of shaped ultrafast optical waveforms”, IEEE J.Quant.Elec Vol.32, No .1, 16 1 -17 1 (19 96) Weiner A.M., ... no(δθ0 )1/ 2 (δλ )1/ 2 MW/ -7 deg deg 10 deg nm mm2 T ps Δλ (η=0.5 for 0.6W/mm2) nm N 3.7 10 0 17 0 50 200 25 58.5 1. 25 1. 42 0.04 4.5 0.6 25 3.9 38.5 1. 60 2.3 0.045 3.8 0.25 45 58.5 1. 25 1. 42 0.022 1. 4...
- 40
- 191
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 11 pptx
Ngày tải lên :
21/06/2014, 10:20
... condition (T=273 .15 K, p=1atm), we have (Dalgarno & Kingston, 19 60): ⎛ 5 .15 × 10 4 .19 × 10 11 4.09 × 10 17 4.32 × 10 23 ⎞ + + + n0 − = 5.547 × 10 −4 ⎜ + ⎟ λ02 λ04 λ06 λ08 ⎝ ⎠ (34) In the above equations, ... disappeared, shown as the point B in Fig 17 After increasing the pulse energy from 1. 2 mJ to 1. 54 mJ at 300 °C, the filament appeared again, shown as the point C in Fig 17 After increasing the temperature ... broadening quantatively in the following subsection -95 0.6 -10 0 0.4 -10 5 0.2 0.0 600 650 700 750 800 850 900 Wavelength(nm) 70 Incident Output (b) -11 0 950 10 00 Intensity(a.u) Incident Output 0.8 1. 0...
- 40
- 320
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 12 pptx
Ngày tải lên :
21/06/2014, 10:20
... values of fundamental intensity The results are shown in Fig 15 for the cases of IH27 = 10 13W/cm2 and IF = × 10 13, × 10 13, × 10 14, × 10 14, 10 15W/cm2 The curve for IF = × 10 13W/cm2 peaks around ... increasing laser intensity at IF > × 10 14W/cm2 in the presence of the H27 pulse and at × 10 14 < IF < × 10 14W/cm2 in the presence of the H13 pulse In order to clarify the origin of this counter-intuitive ... driving and XUV pulse ( ωX = 17 .05eV), the former (λ = 16 00 nm) with a peak intensity of 1. 6 × 10 14W/cm2 and the latter 2.3 × 10 11W/cm2 Lower curve: harmonic spectra for the cases of the driving...
- 40
- 224
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 13 pptx
Ngày tải lên :
21/06/2014, 10:20
... Advances in Solid- State Lasers: Development and Applications (a) (c) 15 54 Log10(XUV Intensities) 10 x (nm) -5 - 10 46 42 38 - 15 60 70 80 (b) 11 0 12 0 90 10 0 T ( x 10 -15 seconds) 13 0 50 40 14 0 80 ... 60 (d) 90 10 0 54 Log10(XUV Intensities) 10 x (nm) 50 -5 50 46 42 38 - 10 10 15 20 25 30 T ( x 10 -15 seconds) 35 40 20 30 40 50 60 80 90 Energy (eV) 10 0 11 0 12 0 Fig Solutions to the 1D time-dependent ... Kapteyn, H C (19 99) Phase matching of high-order harmonics in hollow waveguides Physical Review Letters, 83, 11 , (September 19 99) 218 7 – 219 0, ISSN 10 79- 711 4 (online), 00 319 007 (print) Froud, C...
- 40
- 253
- 0
Advances in Solid-State Lasers: Development and Applicationsduration and in the end limits Part 14 pdf
Ngày tải lên :
21/06/2014, 10:20
... single charge state; Ne8+ at 2 10 17 W/cm2, Ar10+ at × 10 18 W/cm2, Ar16+ at 1. 2 × 10 19 W/cm2, Na10+ at × 10 19 W/cm2, and Na 11+ at 1. 2 × 10 20 W/cm2 Results for ionization from multiple charge states ... shown in Fig for laser intensities of × 10 17 W/cm2, × 10 18 W/cm2 and 1. 2 × 10 19 W/cm2 At an intensity of × 10 17 W/cm2 (Fig 5(a)) the electron motion is largely non-relativistic with a peak = 1. 05 ... 512 Advances in Solid- State Lasers: Development and Applications of intense laser pulse with solids (Linde et al., 19 95, 19 96, 19 99; Norreys et al., 19 96; Lichters et al., 19 96; Tarasevitch...
- 40
- 217
- 0
Advances in Solid State Circuits Technologies pot
Ngày tải lên :
27/06/2014, 01:20
... MAX: Io = Maximum(Iin1, Iin2, …, IinN)= Iin3= 10 μA MIN: Io = Minimum(Iin1, Iin2, …, IinN)= Iin5= μA MED: Io = Median(Iin1, Iin2, …, IinN)= Iin2= μA WTA: Output voltages Vo1(rank), Vo2(rank), ... gain is − Av = A1 * A2 = gm9 (gm19 ||rO 11 )gm5 (rO ||rO ) (29) The proposed transconductor is shown in Fig M 16 M 12 M 11 M5 M6 I out1 M9 VBias M 15 I out M3 M4 VC M 13 M7 Vin1 M1 M M 10 Vin ... operating procedures are described as follows: t1: COMPt1 (Vin1 , Vin2 ) 1 t2: COMPt12 ( Zt1 , Vin3 ) CMOS Nonlinear Signal Processing Circuits … t ( N 1) : COMPt1N 1) ( Zt( N −2 ) , VinN )...
- 456
- 272
- 0