[...]... obtain in parametric form: r r The corresponding band structure is presented at Fig 5 Fig 5 Band structure near the metal-polymer junction for major (left) and minor (right) carriers' injection Here M and P indicate the area of metal and polymer, VB and CB are the valence and conducting bands, S(BP) denotes the new soliton (bipolaron) band, FL- Fermi energy of the metal, PL - polaronic level We can determine... 16, 333 (1946) 10 S Brazovskii and N Kirova, Synth Met 55-57, 1254 (1993) 1 1 S Brazovskii and N Kirova, Synth Met 77, 229 (1996) 12 S Brazovskii, I Dzyaloshinskii, and N Kirova, Sov Phys JETP 54, 120 (1982) 13 M Abramovitz and LA Stegun, Handbook of Mathematical Functions (National bureau of standarts, New York 1965) 20 International Journal of High Speed Electronics and Systems Vol 17, NO 3 (2007)... continues to limit its use in commercial device modeling, even with the evolution of faster computers, particularly when sophisticated (and computationally demanding) physical models are implemented A typical example of the model evolution is the increased use of fullband representation of the electronic where the simple analytic representation of the band structure is replaced by a much more realistic... faster simulation of different families of semiconductor devices with complex geometries and boundary conditions Here we discuss two applications of this simulator of technological interest, one a comparison of the performance of Ge and Insulator (GOI) transistor technology 25 470 S M Goodnick & M Saraniti compared to Si on Insulator (SOI) technology, the second a study of the performance of AlGaN/GaN heterostructure... properties of these materials with respect to traditional semiconductors Instead of the usual band banding near the contact interface, new allowed electronic bands appear inside the band gap As a result the bias electric field and the injected charge penetrate into the polymer via creation of a soliton lattice, which period changes with the distance from the contact surface This results in the branching of. .. Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods As a particular example, this method is applied to study high field transport in GaN and GaN/AIGaN heterostructures,... chip device density, and that is clever circuit design A modem integrated circuit chip is a dense array of many different materials While most of the devices sit at the Si surface, in the bottom-most level, there are several levels of metals and insulators lying above this In fact, one of the most important uses of nanowire transistors may well be as vertical switches between levels of metal in these... with polar phonons of the gate dielectric results in selftrapping of carriers and in formation of the surface polaron A bias electric field drastically enhanced the effect Even for its typical values -lo6 eV/cm, it profoundly stabilizes the surface long range polarons The existence of polarons will show up in enhanced effective mass, mid-gap states and in pseudo-gap regime in case of tunneling experiments... Ren, and S Datta, Essential physics of transport in nanoscale MOSFETs, 2000 SISPAD Tech Dig., 1-5 (2000) A Svizhenko and M P Anantram, IEEE Trans Electron Dev 50, 1459 (2003) R Kotylar, B Obradovic, P Matagne, M Stettler, and M D Giles, Appl Phys Lett 84, 5270 (2004) M J Gilbert and D K Ferry, J Appl Phys 95,7954 (2004) M J Gilbert and D K Ferry, J Appl Phys 99,054503 (2006) M J Gilbert, R Akis, and. .. semiconductors Instead of the usual band banding near the contact interface, new allowed electronic bands appear inside the band gap As a result the bias electric field and the injectcd charge penetrate into the polymer via creation of the soliton lattice which period changes with the distance from the contact surface The performed studies open the possibility to describe the stationary characteristics and the hysteresis . Wei Printed in Singapore by Mainland Press Pte Ltd PREFACE The content of this issue is based on the invited and contributed papers presented by the researchers working in the field of physics. and modeling of novel electronic and optoelectronic devices at the International Workshop Tera- and Nano-Devices: Physics and Modeling held on October 16-19, 2006 in Aizu-Wakamatsu, Japan alt="" PHYSICS AND MODELING OF TERA- AND NANO-DEVICES SELECTED TOPICS IN ELECTRONICS AND SYSTEMS Editor-in-Chief: M. S. Shur Published Vol. 31 : Advanced Device Modeling and Simulation